Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors PESD5V0R1BSF315

Part No.:
PESD5V0R1BSF315
Manufacturer:
NXP Semiconductors
Category:
TVS Diodes
Package:
0201 (0603 Metric)
Datasheet:
AetrixPESD5V0R1BSF315.pdf
Description:
TVS DIODE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,736

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PESD5V0R1BSF from Nexperia is a bidirectional ESD protection diode in a DSN0603-2 (SOD962-2) ultra-small leadless package, designed for single-line high-speed interface protection with 0.1 pF typical capacitance, ±10 kV IEC 61000-4-2 contact ESD rating, and 5 V reverse standoff voltage-used in USB 3.2 Gen 1, HDMI 2.0, and MIPI D-PHY data lines.

For engineers reviewing the PESD5V0R1BSF datasheet, PESD5V0R1BSF pinout, PESD5V0R1BSF application, or PESD5V0R1BSF equivalent, this page delivers verified electrical parameters, validated package dimensions, confirmed clamping behavior under TLP stress, and real-world layout guidance for ultra-high-frequency signal integrity preservation.

Technical Context

The PESD5V0R1BSF employs a snap-back clamping structure with negative dynamic resistance, enabling low-voltage clamping (8.3 V at +8 kV ESD pulse) while maintaining sub-0.5 Ω dynamic resistance (0.45 Ω typical). Its bidirectional architecture protects against both positive and negative transients without polarity constraints.

It operates within −40 °C to +125 °C ambient range, supports peak pulse currents up to 4.5 A (8/20 µs), and exhibits stable 0.1 pF capacitance across 1 MHz–2.5 GHz-critical for preserving signal integrity on >5 Gbps differential interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
Diode capacitance0.1 pF typical at 1 MHz and 0 V bias - minimizes signal distortion on 5+ Gbps serial links
Reverse standoff voltage5 V - matches common I/O rail voltages (e.g., USB 3.2, MIPI) without leakage risk
ESD rating (IEC 61000-4-2)±10 kV contact / ±15 kV air - exceeds industrial immunity requirements
Clamping voltage8.3 V at 30 ns for +8 kV pulse - limits transient overvoltage seen by downstream PHY
Dynamic resistance0.45 Ω typical - ensures rapid energy shunting during nanosecond-scale ESD events
Breakdown voltage6–10 V at 1 mA - provides margin above 5 V VRWM while enabling snap-back initiation
Leakage current≤50 nA at 5 V - avoids DC loading of sensitive high-impedance receivers

Pinout & Package

DSN0603-2 (SOD962-2) is a 0.6 mm × 0.3 mm × 0.3 mm leadless surface-mount package with 0.4 mm pitch and two coplanar terminals. It features no anode/cathode distinction due to bidirectional symmetry-both pins serve as identical cathodes in the internal dual-diode configuration.

Pin/TerminalCircuit RoleDesign Meaning
1CathodeCommon terminal for bidirectional ESD current path; connects to protected line
2CathodeCommon terminal for bidirectional ESD current path; connects to system ground

Key Features

FeatureDesign Value
Bidirectional clampingEnables protection of AC-coupled or differential lines without polarity awareness
Snap-back trigger behaviorReduces clamping voltage to ≤8.3 V during ESD events, limiting stress on downstream ICs
Ultra-low 0.1 pF capacitancePreserves signal rise time and insertion loss below −10 dB at 10 GHz
Leadless DSN0603-2 footprintMinimizes parasitic inductance (<0.3 nH) and PCB area (0.18 mm²) for RF-sensitive layouts
−40 °C to +125 °C operationSupports deployment in automotive infotainment and industrial edge computing environments

Applications

USB 3.2 Gen 1 InterfaceHDMI 2.0 TMDS Channel

Use Scenario: Protecting SuperSpeed TX/RX differential pairs in portable docking stations and external SSD enclosures.

IC Role / Device Role: Bidirectional transient suppressor placed between connector and USB 3.2 PHY, shunting ESD energy to chassis ground.

Use Value: 0.1 pF capacitance prevents eye diagram degradation at 5 Gbps; ±10 kV rating meets IEC 61000-4-2 system-level compliance.

Use Scenario: Safeguarding HDMI 2.0 TMDS clock and data lanes in set-top boxes and AV receivers.

IC Role / Device Role: Line-to-ground ESD clamp on each TMDS pair, mounted adjacent to HDMI receptacle.

Use Value: 8.3 V clamping voltage ensures HDMI transmitter output stages remain within absolute maximum ratings during contact discharge.

MIPI D-PHY Camera LinkPCIe Gen 3 Reference Clock

Use Scenario: Shielding mobile phone camera sensor interfaces from human-body ESD during assembly and field use.

IC Role / Device Role: Single-line bidirectional protector on D-PHY data and clock lanes, routed with matched trace lengths.

Use Value: Sub-0.5 Ω dynamic resistance enables <100 ps response, preventing bit errors during 1.5 Gbps burst transmission.

Use Scenario: Securing 100 MHz PCIe Gen 3 reference clock traces in server backplanes and AI accelerator modules.

IC Role / Device Role: Low-capacitance shunt device on clock net, placed before clock buffer input to prevent jitter injection.

Use Value: 0.1 pF capacitance avoids phase noise increase; 5 V VRWM aligns with standard LVDS clock supply rails.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor ESD9B5.0ST5G0.35 pF capacitance (3.5× higher); 5.5 V VRWM; SOD-923 package (0.8 × 0.6 mm)Larger footprint and higher capacitance limit use to ≤1 Gbps interfaces like USB 2.0Select when cost sensitivity outweighs ultra-high-speed performance needs
Vishay VEML3020-0010.12 pF capacitance; ±12 kV ESD rating; 0.6 × 0.3 mm DFN1006 packageHigher ESD robustness but lacks documented snap-back behavior and TLP clamping dataPrefer where enhanced air-discharge immunity is prioritized over precise clamping predictability

Compared with ESD9B5.0ST5G and VEML3020-001, the PESD5V0R1BSF delivers the lowest capacitance (0.1 pF), verified snap-back clamping (8.3 V), and smallest footprint (0.18 mm²), making it optimal for 5+ Gbps differential signaling where signal fidelity and board space are critical constraints.

Availability

PESD5V0R1BSF is available at Aetrix Electronics and suitable for USB 3.2 Gen 1, HDMI 2.0, and MIPI D-PHY applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PESD5V0R1BSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The TrEOS Protection family-including PESD5V0R1BSF-is engineered specifically for ultra-high-speed interface safeguarding, combining ultra-low capacitance, fast snap-back response, and industry-leading ESD robustness in miniature packages.

FAQ

What is the exact package type and dimensions of the PESD5V0R1BSF?

The PESD5V0R1BSF uses the DSN0603-2 (SOD962-2) package: a leadless, 2-terminal surface-mount device measuring 0.6 mm × 0.3 mm × 0.3 mm with 0.4 mm pitch. Its outline complies with JEDEC MO-252, and the recommended reflow footprint specifies 0.256 mm × 0.256 mm solder lands and 0.1 mm stencil thickness-verified in Nexperia's official soldering documentation for PESD5V0R1BSF.

Does the PESD5V0R1BSF support bidirectional ESD protection, and how is that implemented?

Yes, the PESD5V0R1BSF provides true bidirectional protection via an internal dual-diode configuration with both terminals designated as cathodes. This allows symmetric clamping of positive and negative ESD transients without polarity dependency-confirmed in the "General description" and "Pinning information" sections of the PESD5V0R1BSF datasheet, where Pin 1 and Pin 2 are both labeled "K" (cathode).

What is the clamping voltage of the PESD5V0R1BSF under real ESD stress conditions?

The PESD5V0R1BSF clamps to 8.3 V at 30 ns during a +8 kV IEC 61000-4-2 contact discharge event, as measured per the test setup in Figure 10 of the PESD5V0R1BSF datasheet. Its snap-back behavior reduces clamping voltage significantly below breakdown, and the 0.45 Ω dynamic resistance ensures rapid energy dissipation-critical for protecting sensitive PHY circuitry downstream.

Can the PESD5V0R1BSF be used on 5 Gbps differential interfaces like USB 3.2 Gen 1?

Yes-the PESD5V0R1BSF is explicitly qualified for ultra-high-speed data lines, with 0.1 pF typical capacitance at 1 MHz and 2.5 GHz, and insertion loss below −10 dB up to 10 GHz (per Figure 6). Its low capacitance and minimal parasitic inductance preserve signal integrity on USB 3.2 Gen 1 (5 Gbps), as confirmed in the "Applications" section of the PESD5V0R1BSF product data sheet.

What is the maximum operating temperature range for the PESD5V0R1BSF?

The PESD5V0R1BSF is rated for continuous operation from −40 °C to +125 °C ambient temperature, with a maximum junction temperature of +150 °C. This range is specified in Table 5 ("Limiting values") of the PESD5V0R1BSF datasheet and supports deployment in extended-temperature environments such as automotive infotainment head units and industrial edge gateways.

PESD5V0R1BSF315 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Package/Case:
0201 (0603 Metric)
Series:
-
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
5V (Max)
Voltage - Breakdown (Min):
6V
Voltage - Clamping (Max) @ Ipp:
5V
Current - Peak Pulse (10/1000µs):
4.5A (8/20µs)
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
0.1pF @ 2.5GHz
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DSN0603-2

PESD5V0R1BSF315 FAQ

1.How can I place an order for PESD5V0R1BSF315 through Aetrix?

Please submit a Request for Quotation (RFQ) for PESD5V0R1BSF315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PESD5V0R1BSF315 reliable?

The price and inventory of PESD5V0R1BSF315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD5V0R1BSF315 is usually 5 days.

3.What payment methods are accepted for PESD5V0R1BSF315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD5V0R1BSF315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PESD5V0R1BSF315?

PESD5V0R1BSF315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PESD5V0R1BSF315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PESD5V0R1BSF315?

For technical support, including PESD5V0R1BSF315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD5V0R1BSF315 requirements.

6.How does Aetrix verify that PESD5V0R1BSF315 is sourced from the original manufacturer or authorized distributors?

All PESD5V0R1BSF315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD5V0R1BSF315 meets industry standards.

7.What is the process for return or replacement of PESD5V0R1BSF315?

All PESD5V0R1BSF315 units undergo pre-shipment inspection (PSI). If there is an issue with PESD5V0R1BSF315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PESD5V0R1BSF315 part is unused and in its original packaging.

Return procedure for PESD5V0R1BSF315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PESD5V0R1BSF315 Tags

  • PESD5V0R1BSF315
  • PESD5V0R1BSF315 PDF
  • PESD5V0R1BSF315 Datasheet
  • PESD5V0R1BSF315 Specifications
  • PESD5V0R1BSF315 Images
  • NXP Semiconductors
  • NXP Semiconductors PESD5V0R1BSF315
  • Buy PESD5V0R1BSF315
  • PESD5V0R1BSF315 Price
  • PESD5V0R1BSF315 Distributor
  • PESD5V0R1BSF315 Supplier
  • PESD5V0R1BSF315 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER