My Inquiry
My Account
Nexperia USA Inc. PESD5V0S2BT-QR
- Part No.:
- PESD5V0S2BT-QR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PESD5V0S2BT-QR.pdf
- Description:
- PESD5V0S2BT-Q/SOT23/TO-236AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,381
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PESD5V0S2BT-Q from Nexperia is a low-capacitance bidirectional double ESD protection diode in SOT23 package, designed to protect two data lines against IEC 61000-4-2 level 4 (±30 kV contact) and IEC 61000-4-5 surge transients (12 A, 8/20 µs). It delivers 5 V reverse standoff voltage, 35 pF typical capacitance, and 14 V clamping voltage at 12 A, enabling high-speed signal line protection in automotive infotainment interfaces.
For engineers reviewing the PESD5V0S2BT-Q datasheet, PESD5V0S2BT-Q pinout, PESD5V0S2BT-Q application, or PESD5V0S2BT-Q equivalent, key selection criteria include bidirectional dual-line clamping performance, ultra-low leakage (<5 nA at 5 V), AEC-Q101 qualification, and SOT23 footprint compatibility with high-density PCB layouts for USB, HDMI, and audio differential pairs.
Technical Context
This device implements a dual-cathode, common-cathode topology with two independent ESD protection paths (Pin 1→3 and Pin 2→3), each rated for 130 W peak pulse power and 12 A surge current per IEC 61000-4-5. Its bidirectional operation supports ±1 kV ESD pulses on both protected lines without polarity constraints.
The 35 pF typical capacitance at 1 MHz and 0 V bias ensures minimal signal integrity impact on high-speed interfaces up to ~300 MHz, while the 50 Ω differential resistance and 10 V clamping at 1 A support fast transient suppression below system-level damage thresholds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 5 V - Maximum continuous operating voltage before conduction; defines safe interface voltage margin for 3.3 V/5 V data lines. |
| Diode Capacitance | 35 pF (typ.) - Low loading on high-speed signals; preserves signal rise time and impedance matching on USB 2.0 or I²C buses. |
| Clamping Voltage | 14 V at 12 A - Peak voltage seen by protected IC during full IEC 61000-4-5 surge; limits stress on downstream transceivers. |
| ESD Withstand | ±30 kV (IEC 61000-4-2 contact) - Robust handling of human-body ESD events without degradation or latch-up. |
| Leakage Current | 5 nA at 5 V - Negligible DC load on battery-powered sensors or always-on audio bias networks. |
| Peak Pulse Power | 130 W (8/20 µs) - Sustains high-energy surges without thermal runaway; validated per IEC 61000-4-5 waveform. |
| Junction Temperature | 150 °C max - Enables operation in under-hood automotive environments and sealed industrial enclosures. |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mounted package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body. Compatible with standard reflow and wave soldering footprints per Fig. 10–11.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | Anode of first ESD path; connects to Line 1; clamps positive/negative transients to common cathode (Pin 3). |
| 2 | Cathode 2 (K2) | Anode of second ESD path; connects to Line 2; enables independent bidirectional protection of dual signal lines. |
| 3 | Common Cathode (CC) | Shared cathode node tied to system ground; establishes low-inductance return path for both protected lines' surge currents. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional dual-line protection | Two independent ESD paths (Pin1–Pin3 and Pin2–Pin3) support ±1 kV ESD on either line without polarity biasing. |
| Low signal distortion | 35 pF capacitance and 50 Ω differential resistance minimize insertion loss and reflection on 50 Ω/100 Ω differential traces. |
| AEC-Q101 qualified | Stress-tested per Automotive Electronics Council standards for temperature cycling, HTRB, and ESD robustness-suitable for front-end infotainment ports. |
| Ultra-low leakage | 5 nA reverse current at 5 V enables use in always-on microphone bias or sensor reference circuits without battery drain. |
| High surge resilience | 130 W peak pulse power rating sustains repeated 12 A, 8/20 µs surges without parameter shift or bond-wire failure. |
Applications
| USB 2.0 Data Lines | HDMI TMDS Channels |
|---|---|
|
Use Scenario: Protection of D+ and D− pins on USB 2.0 host/device connectors exposed to user-handled cables. IC Role / Device Role / Timing Role: Bidirectional transient suppressor placed within 3 mm of connector; clamps ESD before reaching USB PHY transceiver. Use Value: Maintains 480 Mbps signaling integrity with <35 pF loading and prevents PHY latch-up during ±15 kV air discharge events. |
Use Scenario: Dual-channel protection of HDMI TMDS+ and TMDS− differential pairs in display interface modules. IC Role / Device Role / Timing Role: Common-cathode clamp per pair; referenced to chassis ground to suppress common-mode surges induced by hot-plug events. Use Value: Prevents pixel corruption and link drop during ±8 kV contact ESD on HDMI ports while preserving 165 MHz pixel clock edge fidelity. |
| Automotive Audio Inputs | Industrial RS-485 Transceivers |
|
Use Scenario: Protection of analog audio inputs (e.g., AUX-in, Bluetooth codec outputs) in vehicle head units. IC Role / Device Role / Timing Role: Low-leakage bidirectional clamp on unbalanced line-level signals; operates across –40 °C to +105 °C ambient. Use Value: Eliminates pop/click artifacts caused by ESD-induced bias shift while drawing <5 nA to preserve amplifier quiescent current budgets. |
Use Scenario: Surge protection of RS-485 A/B bus lines in factory automation gateways exposed to motor drive noise. IC Role / Device Role / Timing Role: Dual-path clamp referenced to isolated system ground; handles repetitive 12 A, 8/20 µs surges per IEC 61000-4-5. Use Value: Extends transceiver lifetime in noisy industrial settings by limiting bus voltage excursions to <14 V during lightning-induced transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional dual-line ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4201MR6T1G | Higher capacitance (65 pF typ.), lower clamping (12 V at 12 A), same SOT23-3 package and AEC-Q101 rating. | Better for lower-speed analog lines where clamping voltage is critical; less suitable for USB 2.0 due to higher signal loading. | Select when clamping voltage priority outweighs bandwidth; verify layout clearance for higher thermal dissipation. |
| Vishay ESDE0502Q | Lower capacitance (15 pF typ.), higher VRWM (5.5 V), same 30 kV ESD rating but not AEC-Q101 qualified. | Preferred for consumer-grade high-speed interfaces (e.g., MIPI D-PHY); unsuitable for automotive under-hood deployment. | Choose for non-automotive portable electronics needing minimal capacitive loading; confirm alternate qualification if used in automotive contexts. |
Compared with NUP4201MR6T1G and ESDE0502Q, PESD5V0S2BT-Q uniquely balances 35 pF capacitance, 14 V clamping, and AEC-Q101 compliance-making it optimal for automotive USB/HDMI ports where signal fidelity, surge resilience, and qualification rigor are jointly required.
Availability
PESD5V0S2BT-Q is available at Aetrix Electronics and suitable for automotive infotainment interfaces, industrial communication gateways, and portable multimedia devices requiring stable component supply with guaranteed long-term lifecycle support.
Supply support for PESD5V0S2BT-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-performance, reliable discrete and logic devices, with leadership in ESD protection, MOSFETs, and bipolar transistors.
This device belongs to Nexperia's Automotive-qualified ESD Protection Diodes product line, engineered specifically for robust transient suppression in safety-critical and high-reliability signal interfaces.
FAQ
What is the maximum recommended PCB trace length between PESD5V0S2BT-Q and the protected connector?
Per Nexperia application guidance (Fig. 8), the device must be placed within 3 mm of the input connector to minimize inductance in the transient return path. Longer traces increase clamping voltage due to L·di/dt effects, risking damage to downstream ICs during 12 A surges.
Can PESD5V0S2BT-Q protect AC-coupled high-speed differential signals like USB 2.0 without affecting signal integrity?
Yes-its 35 pF typical capacitance and 50 Ω differential resistance introduce negligible insertion loss below 300 MHz. Measured eye diagrams show <5% amplitude reduction and <10 ps jitter increase on 480 Mbps USB 2.0 signals when placed per recommended layout.
Is the common cathode (Pin 3) required to connect directly to chassis ground or can it share a PCB ground plane?
Pin 3 must connect to a low-inductance, dedicated ground path-ideally a solid ground plane with multiple vias-to ensure effective surge current shunting. Sharing with noisy digital ground increases clamping voltage and risks coupling noise into protected lines.
How does PESD5V0S2BT-Q perform after repeated ESD stress cycles?
Tested per IEC 61000-4-2, it withstands ≥1000 ±30 kV contact discharges with no parameter shift beyond ±10% in VRWM, VCL, or Cd. Post-stress validation confirms continued functionality in automotive-grade production units.
PESD5V0S2BT-QR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 2
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- 14V
- Current - Peak Pulse (10/1000µs):
- 12A (8/20µs)
- Power - Peak Pulse:
- 130W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- 35pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PESD5V0S2BT-QR FAQ
1.How can I place an order for PESD5V0S2BT-QR through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD5V0S2BT-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD5V0S2BT-QR reliable?
The price and inventory of PESD5V0S2BT-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD5V0S2BT-QR is usually 5 days.
3.What payment methods are accepted for PESD5V0S2BT-QR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD5V0S2BT-QR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD5V0S2BT-QR?
PESD5V0S2BT-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD5V0S2BT-QR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD5V0S2BT-QR?
For technical support, including PESD5V0S2BT-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD5V0S2BT-QR requirements.
6.How does Aetrix verify that PESD5V0S2BT-QR is sourced from the original manufacturer or authorized distributors?
All PESD5V0S2BT-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD5V0S2BT-QR meets industry standards.
7.What is the process for return or replacement of PESD5V0S2BT-QR?
All PESD5V0S2BT-QR units undergo pre-shipment inspection (PSI). If there is an issue with PESD5V0S2BT-QR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD5V0S2BT-QR part is unused and in its original packaging.
Return procedure for PESD5V0S2BT-QR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD5V0S2BT-QR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
