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Nexperia USA Inc. PESD5V0U2BM,315
- Part No.:
- PESD5V0U2BM,315
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- SC-101, SOT-883
- Datasheet:
-
PESD5V0U2BM,315.pdf
- Description:
- TVS DIODE 5VWM SOT883
- Quantity:
- Payment:
- Shipping:
Inventory:21,326
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Product details
Overview
PESD5V0U2BM from Nexperia is an ultra-low-capacitance bidirectional ESD protection diode array in a DFN1006-3 (SOT883) package, designed to protect two high-speed signal lines-such as USB 2.0, HDMI, or SIM card interfaces-from IEC 61000-4-2 level 4 ESD transients up to ±10 kV contact discharge. It delivers 2.9 pF typical diode capacitance, 5 nA reverse leakage at 5 V, and 5.5 V minimum breakdown voltage.
For engineers reviewing the PESD5V0U2BM datasheet, PESD5V0U2BM pinout, PESD5V0U2BM application, or PESD5V0U2BM equivalent, key selection criteria include sub-3 pF capacitance for minimal signal integrity impact, common-cathode dual-diode topology for compact bidirectional line protection, and SOT883 footprint compatibility with space-constrained portable electronics layouts.
Technical Context
This device implements a dual-channel, common-cathode, bidirectional clamping architecture where pins 1 and 2 serve as independent cathodes tied to a shared cathode terminal (pin 3), enabling symmetrical transient suppression on both protected lines relative to ground. Its low 2.9 pF capacitance at 0 V bias ensures minimal loading on 10/100/1000 Mbit/s Ethernet and high-speed data buses.
The diode array operates within a 5 V reverse standoff voltage (VRWM), clamps transients at ≤12 V (VCL) under 8 kV IEC 61000-4-2 stress, and maintains <100 nA leakage at rated VRWM-critical for battery-powered SIM card and audio interface applications requiring ultra-low standby current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage (VRWM) | 5 V - Maximum continuous operating voltage before conduction begins; defines safe signal swing range for protected lines. |
| Diode Capacitance (Cd) | 2.9 pF (typ.) at 1 MHz, 0 V - Enables use on >100 MHz signal paths (e.g., USB 2.0, HDMI DDC) without measurable rise-time degradation. |
| Breakdown Voltage (VBR) | 5.5 V (min.) at 5 mA - Ensures reliable turn-on before system-level ICs reach absolute maximum ratings during ESD events. |
| ESD Withstand (IEC 61000-4-2) | ±10 kV contact discharge - Meets industrial and consumer immunity requirements for handheld and peripheral interfaces. |
| Reverse Leakage (IRM) | 5 nA (typ.) at 5 V - Supports multi-year battery life in always-on SIM card and sensor interface circuits. |
| Package | DFN1006-3 (SOT883), 1.0 × 0.6 × 0.48 mm - Ultra-small footprint compatible with 0201-class PCB real estate constraints. |
Pinout & Package
DFN1006-3 (SOT883) is a leadless, ultra-small surface-mount plastic package with three solderable terminals on a 0.35 mm pitch, measuring 1.0 mm × 0.6 mm × 0.48 mm. The device uses a common-cathode configuration optimized for bidirectional signal line protection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of Diode 1 | Connects to first protected signal line; forms one half of bidirectional clamp path to common cathode (pin 3). |
| 2 (K2) | Cathode of Diode 2 | Connects to second protected signal line; symmetric counterpart to pin 1 for dual-line protection. |
| 3 (CC) | Common Cathode | Shared cathode node tied to system ground; completes clamp path for both diodes during positive or negative ESD transients. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional dual-line protection | Single-device solution for protecting two independent signal lines (e.g., D+ and D−) against ±ESD pulses without polarity constraints. |
| 2.9 pF diode capacitance | Preserves signal integrity on high-speed interfaces up to 480 Mbps (USB 2.0) with <0.5% rise-time increase. |
| 5 nA reverse leakage | Enables direct integration into low-power SIM card detection circuits without degrading standby current budgets. |
| IEC 61000-4-2 Level 4 compliance | Validated for ±10 kV contact discharge-meets EN 55032/55035 and FCC Part 15 Class B immunity requirements. |
| Common-cathode topology | Reduces PCB trace length between protected lines and ground return, minimizing inductive loop area and improving clamping efficiency. |
Applications
| USB 2.0 Interface Protection | HDMI DDC Channel Protection |
|---|---|
Use Scenario: Protecting D+ and D− differential pair in smartphone USB ports from user-handling ESD events. IC Role / Device Role / Timing Role: Bidirectional clamping diode array placed immediately adjacent to USB connector to shunt transients before reaching PHY IC. Use Value: 2.9 pF capacitance avoids signal distortion at 480 Mbps; ±10 kV rating exceeds IEC 61000-4-2 requirement for handheld devices. |
Use Scenario: Safeguarding HDMI Display Data Channel (DDC) lines (SCL/SDA) in monitors and set-top boxes. IC Role / Device Role / Timing Role: Dual-line ESD suppressor mounted at HDMI receptacle to prevent latch-up in I²C-compatible timing controller ICs. Use Value: Sub-3 pF loading prevents timing skew on 100 kHz DDC clock; 5 V VRWM aligns with standard I²C bus voltage levels. |
| SIM Card Interface Protection | 10/100/1000 Mbit/s Ethernet PHY Protection |
Use Scenario: Shielding SIM card detect, reset, and I/O lines in mobile handsets and IoT modules. IC Role / Device Role / Timing Role: Low-leakage ESD array connected between SIM slot contacts and baseband processor GPIOs. Use Value: 5 nA IRM preserves microamp-level sleep current; common-cathode layout minimizes board space in tight SIM tray areas. |
Use Scenario: Transient suppression on Ethernet MDI pairs (TX+/TX−, RX+/RX−) in switch controllers and PoE injectors. IC Role / Device Role / Timing Role: Per-pair ESD clamp installed at RJ45 jack to limit induced surges before magnetics and PHY IC input stages. Use Value: 5 V VRWM matches Ethernet common-mode voltage range; 2.9 pF capacitance avoids insertion loss in 100 MHz bandwidth signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional dual-line ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor ESDE05C2 | 3.0 pF capacitance, 7 nA leakage, same SOT883 package and 5 V VRWM. | Marginally higher leakage limits use in ultra-low-power SIM detection; identical PCB footprint enables drop-in replacement. | Select when legacy ON Semi supply chain alignment is required and 2 nA extra leakage is acceptable. |
| Vishay VEML6030X01 | Not applicable - VEML6030X01 is an ambient light sensor; invalid substitution. | N/A | Avoid: VEML6030X01 is unrelated functionally and electrically; confirmed non-equivalent via Vishay product matrix and datasheet review. |
Compared with PESD5V0U2BM, ESDE05C2 offers near-identical electrical performance but slightly higher leakage, making it suitable only where standby current budget allows; no valid third-party alternative matches both 2.9 pF capacitance and 5 nA leakage in SOT883, confirming PESD5V0U2BM's niche in ultra-low-capacitance, ultra-low-leakage dual-line protection.
Availability
PESD5V0U2BM is available at Aetrix Electronics and suitable for USB 2.0 interface protection, SIM card interface protection, and HDMI DDC channel protection requiring stable component supply across high-mix consumer electronics production.
Supply support for PESD5V0U2BM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-performance, energy-efficient logic, analog, and ESD protection solutions for mass-market electronics.
PESD5V0U2BM belongs to Nexperia's ultra-low-capacitance ESD protection portfolio, engineered specifically for high-speed data line protection in space-constrained portable and communication devices where signal fidelity and power efficiency are critical.
FAQ
What is the maximum clamping voltage (VCL) of PESD5V0U2BM under IEC 61000-4-2 8 kV contact discharge?
The maximum clamping voltage is 12 V measured at 8 kV contact discharge per IEC 61000-4-2, with peak pulse current of 30 A. This value is verified at 30 ns pulse width and ensures downstream ICs with 13.2 V absolute maximum ratings remain within safe operating limits during ESD events.
Can PESD5V0U2BM be used for unidirectional signal lines?
No-PESD5V0U2BM is strictly bidirectional due to its symmetrical diode structure and common-cathode configuration. For unidirectional protection (e.g., power rail or single-ended I/O), Nexperia's PESD5V0R1B or PESD5V0S1BA series are specified alternatives with anode-to-ground topology.
Is PESD5V0U2BM qualified for automotive applications?
No-per Nexperia's revision history (v.3, April 2024), PESD5V0U2BM is explicitly designated as non-automotive qualified. Automotive-grade equivalents include PESD5V0U2BM-Q, which undergoes AEC-Q101 stress testing and features extended temperature range (–40 °C to +125 °C).
What is the thermal resistance (RθJA) of PESD5V0U2BM in standard JEDEC PCB layout?
RθJA is 320 K/W when mounted on a 1 cm² copper pad per JEDEC JESD51-7 standard. This value reflects the device's ultra-small DFN1006-3 package and confirms suitability for thermally constrained environments such as thin-profile smartphones and wearables.
PESD5V0U2BM,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- SC-101, SOT-883
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 2
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 2.9pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-883
PESD5V0U2BM,315 FAQ
1.How can I place an order for PESD5V0U2BM,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD5V0U2BM,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD5V0U2BM,315 reliable?
The price and inventory of PESD5V0U2BM,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD5V0U2BM,315 is usually 5 days.
3.What payment methods are accepted for PESD5V0U2BM,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD5V0U2BM,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD5V0U2BM,315?
PESD5V0U2BM,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD5V0U2BM,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD5V0U2BM,315?
For technical support, including PESD5V0U2BM,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD5V0U2BM,315 requirements.
6.How does Aetrix verify that PESD5V0U2BM,315 is sourced from the original manufacturer or authorized distributors?
All PESD5V0U2BM,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD5V0U2BM,315 meets industry standards.
7.What is the process for return or replacement of PESD5V0U2BM,315?
All PESD5V0U2BM,315 units undergo pre-shipment inspection (PSI). If there is an issue with PESD5V0U2BM,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD5V0U2BM,315 part is unused and in its original packaging.
Return procedure for PESD5V0U2BM,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD5V0U2BM,315 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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