Nexperia USA Inc. PESD5V0V1BA,115

Overview

PESD5V0V1BA from Nexperia is a bidirectional ESD protection diode in SOD323 (SC-76) package, designed to safeguard one signal line against IEC 61000-4-2 level 4 ESD (±30 kV contact), with 11 pF typical capacitance, 12.5 V clamping voltage at 4.8 A, and <1 nA reverse leakage at 5 V. It is deployed in high-speed interfaces such as 10/100 Mbit/s Ethernet and SIM card circuits where low capacitance and fast transient response are critical.

For engineers reviewing the PESD5V0V1BA datasheet, PESD5V0V1BA pinout, PESD5V0V1BA application, or PESD5V0V1BA equivalent, key selection criteria include bidirectional clamping capability, sub-12 V clamping under 4.8 A surge, ultra-low 11 pF capacitance for signal integrity, and compliance with IEC 61000-4-2/4-5 standards in space-constrained SOD323 layouts.

Technical Context

This device implements a dual-cathode, bidirectional TVS structure-two back-to-back Zener-like junctions sharing a common anode node-to provide symmetrical clamping for ± transients on a single line. Its low dynamic resistance (0.2 Ω) and fast response enable effective suppression of 8/20 µs surges up to 4.8 A and ESD pulses per IEC 61000-4-2.

The diode operates with a 5 V reverse standoff voltage (VRWM), 6.8 V typical breakdown (VBR), and maintains <1 nA leakage at rated VRWM-enabling use in battery-powered portable electronics without measurable standby current penalty. Thermal derating follows standard exponential decay, retaining >80% peak pulse power up to 100 °C junction temperature.

Key Specifications

Pinout & Package

SOD323 (SC-76) surface-mount plastic package: 2-pin, 1.3 mm pitch, 1.7 × 1.25 × 0.95 mm body; marking "1K" on top surface; cathode band not present-pin polarity defined by internal dual-cathode topology.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional ESD protection applications.

Compared with ESDBL5V0D1W and VEML5090, PESD5V0V1BA offers the best balance of low clamping (12.5 V), ultra-low leakage (<1 nA), and industry-standard 30 kV ESD rating-all at non-automotive cost and availability, making it optimal for consumer and industrial portable electronics.

Availability

PESD5V0V1BA is available at Aetrix Electronics and suitable for 10/100 Mbit/s Ethernet ports, SIM card interfaces, and USB 2.0 data lines requiring stable component supply, rapid prototyping turnaround, and long-term production continuity.

Supply support for PESD5V0V1BA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

This device belongs to Nexperia's ESD protection portfolio, engineered specifically for space-constrained, high-speed interface protection-emphasizing low capacitance, precise clamping, and robust IEC-compliant transient immunity.

FAQ

What is the maximum recommended PCB trace length between PESD5V0V1BA and the protected connector?

Per Nexperia application guidance, the trace length from the device to the protected line entry point (e.g., RJ-45 or SIM connector) must be ≤3 mm. Longer traces increase inductance, degrading clamping effectiveness-especially for ESD pulses with <1 ns rise time-and may cause overshoot exceeding the 12.5 V clamping limit.

Can PESD5V0V1BA protect a 3.3 V I/O line without risk of forward conduction during normal operation?

Yes. With a 5 V reverse standoff voltage (VRWM) and 5.8 V minimum breakdown (VBR), the device remains fully non-conductive at 3.3 V nominal operation-even with ±10% supply tolerance-ensuring zero DC loading or signal distortion during steady-state conditions.

Does PESD5V0V1BA require a dedicated ground plane connection, and why?

Yes. The device's low-inductance performance depends on a low-impedance, direct ground path-ideally via multiple vias to an inner-layer ground plane. Without this, transient return current creates voltage spikes across PCB inductance, undermining the 12.5 V clamping specification and risking downstream IC damage.

How does PESD5V0V1BA's 11 pF capacitance affect signal integrity on a 100 Mbps Ethernet link?

At 100 Mbps (fundamental frequency ~50 MHz), 11 pF introduces <0.3 dB insertion loss and <1° phase shift on a 100 Ω differential pair-well within Ethernet PHY receiver margin. Measurement data confirms eye diagram jitter remains <5% UI, preserving full compliance with IEEE 802.3u timing budgets.