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NXP Semiconductors PESD5V0V4UF,115
- Part No.:
- PESD5V0V4UF,115
- Manufacturer:
- NXP Semiconductors
- Category:
- TVS Diodes
- Package:
- 6-XFDFN
- Datasheet:
-
PESD5V0V4UF,115.pdf
- Description:
- TVS DIODE 5VWM 13VC 6XSON SOT886
- Quantity:
- Payment:
- Shipping:
Inventory:2,122
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Product details
Overview
PESD5V0V4UF,115 from Nexperia is a unidirectional quadruple ESD protection diode array in an ultra-small leadless XSON6 (SOT886) package, rated for 5.0 V reverse standoff voltage, 12–15 pF capacitance at 0 V bias, 12 kV IEC 61000-4-2 contact ESD immunity, and 11 V clamping voltage at 1 A pulse current-designed to safeguard high-speed USB, HDMI, and SIM card signal lines in portable electronics.
For engineers reviewing the PESD5V0V4UF,115 datasheet, PESD5V0V4UF,115 pinout, PESD5V0V4UF,115 application, or PESD5V0V4UF,115 equivalent, key selection criteria include low-capacitance signal integrity preservation, sub-25 nA leakage at 5 V, compact SOT886 footprint compatibility with dense PCB layouts, and verified compliance with IEC 61000-4-2 Level 4 and IEC 61000-4-5 surge standards.
Technical Context
This device implements four independent unidirectional ESD protection diodes sharing two common anode terminals (pins 2 and 5), enabling efficient layout for differential or single-ended signal pairs. Its architecture delivers fast transient response with <1 ns rise time and clamps ESD pulses within nanoseconds while maintaining minimal capacitive loading on protected lines.
Each diode exhibits a typical breakdown voltage of 6.8 V and differential resistance of 100 Ω, ensuring robust overvoltage suppression without compromising signal fidelity in 5 V logic interfaces. The SOT886 package supports reflow-only assembly and provides thermal performance suitable for continuous operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 5.0 V - Maximum continuous DC voltage the diodes block without conduction, matching 5 V I/O rail systems. |
| Diode Capacitance | 12–15 pF at 1 MHz / 0 V - Enables use on high-speed interfaces like USB 2.0 (480 Mbps) without signal degradation. |
| Clamping Voltage | 11 V at 1 A - Limits transient voltage seen by downstream ICs during ESD events, protecting 5 V logic inputs. |
| ESD Immunity | ±12 kV contact per IEC 61000-4-2 Level 4 - Meets industrial and consumer equipment immunity requirements. |
| Peak Pulse Power | 16 W per diode (8/20 µs) - Handles surge transients from IEC 61000-4-5 with 1.5 A peak current capability. |
| Leakage Current | ≤25 nA at 5 V - Ensures negligible power loss and no measurable impact on battery-powered circuit standby current. |
| Breakdown Voltage | 6.4–7.2 V - Provides safe margin above 5 V operating rail while triggering reliably before system damage occurs. |
Pinout & Package
XSON6 (SOT886) package: leadless ultra-small outline, 1.0 × 1.45 × 0.5 mm body, 6-terminal bottom-terminated footprint optimized for high-density routing and automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (diode 1) | Protected signal line input for first ESD channel; connects to data line (e.g., USB D+). |
| 2 | Common anode | Shared return path to ground for diodes 1 and 2; requires low-inductance ground connection. |
| 3 | Cathode (diode 2) | Protected signal line input for second ESD channel (e.g., USB D−). |
| 4 | Cathode (diode 3) | Protected signal line input for third ESD channel (e.g., SIM CLK). |
| 5 | Common anode | Shared return path to ground for diodes 3 and 4; electrically isolated from pin 2 in layout. |
| 6 | Cathode (diode 4) | Protected signal line input for fourth ESD channel (e.g., SIM DATA). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 12–15 pF enables clean signal integrity on 480 Mbps USB 2.0 and other high-speed digital interfaces. |
| Low leakage current | ≤25 nA at 5 V ensures minimal impact on battery life and analog reference stability in portable devices. |
| IEC 61000-4-2 Level 4 compliance | ±12 kV contact discharge rating meets global regulatory requirements for consumer and industrial end-equipment. |
| Compact SOT886 footprint | 1.0 × 1.45 mm area saves >40% board space versus SOIC-8 alternatives while supporting fine-pitch routing. |
| Unidirectional quad configuration | Dual common-anode structure allows independent protection of two differential pairs or four single-ended lines. |
Applications
| USB 2.0 Interface Protection | SIM Card Slot Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines of a mobile phone's USB 2.0 port against user-handling ESD events during cable insertion. IC Role / Device Role / Timing Role: Unidirectional ESD clamp placed directly at connector, shunting transients to ground before reaching USB transceiver IC. Use Value: Prevents latch-up or permanent damage to the USB PHY while preserving 480 Mbps eye diagram integrity via 12 pF capacitance. |
Use Scenario: Shielding SIM card interface signals (CLK, DATA, RST, VCC) in smartphones and IoT modules from electrostatic discharge during hot-swap operations. IC Role / Device Role / Timing Role: Quad-channel ESD suppressor mounted adjacent to SIM connector, with dedicated cathodes per signal and dual common anodes for compact grounding. Use Value: Maintains reliable SIM detection and communication under ±12 kV contact ESD stress without requiring additional decoupling or layout rerouting. |
| HDMI Data Lane Protection | Audio Line Input Protection |
Use Scenario: Safeguarding TMDS data lanes in portable HDMI transmitters (e.g., tablets, dongles) exposed to ESD during cable mating. IC Role / Device Role / Timing Role: Low-capacitance ESD array placed at HDMI receptacle, with one diode pair per differential lane (clock + data). Use Value: Enables full 1080p/60 Hz transmission without jitter increase or bit error rate degradation due to 12 pF per diode loading. |
Use Scenario: Protecting line-in or microphone inputs on portable audio devices (e.g., Bluetooth speakers, voice recorders) from user-touch ESD. IC Role / Device Role / Timing Role: Single-ended ESD clamp on analog audio paths, leveraging low leakage (<25 nA) to avoid DC offset or noise injection. Use Value: Preserves signal-to-noise ratio and dynamic range in 24-bit audio paths while meeting IEC 61000-4-2 Level 4 immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5V3U4-2/TR | Higher VRWM (5.3 V), slightly higher Cd (16 pF typ), same SOT886 package and 12 kV ESD rating. | Better margin for 5.3 V tolerant interfaces; minor capacitance trade-off for USB 2.0 timing budgets. | Select when tighter VRWM tolerance or legacy design reuse of ESDE5V3U4-2/TR footprint is required. |
| TPD4E05U06DBVR | Lower Cd (0.6 pF typ), lower VCL (8.5 V at 1 A), but larger SOT-23-6 package and higher cost. | Superior for >1 Gbps interfaces (e.g., USB 3.0 SS); less space-efficient and not drop-in compatible. | Choose only if sub-1 pF capacitance is mandatory and board area permits larger footprint. |
Compared with PESD5V0V4UF,115, ESDE5V3U4-2/TR offers marginally improved voltage tolerance with near-identical form factor and performance, while TPD4E05U06DBVR delivers ultra-low capacitance at the expense of size, cost, and non-interchangeable layout-making PESD5V0V4UF,115 the optimal balance of density, speed, and cost for mainstream 5 V portable interfaces.
Availability
PESD5V0V4UF,115 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, SIM card slot hardening, and HDMI TMDS lane safeguarding requiring stable component supply across high-volume consumer electronics production.
Supply support for PESD5V0V4UF,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a leading semiconductor manufacturer specializing in high-performance, energy-efficient logic, discrete, and MOSFET solutions for automotive, industrial, and consumer markets.
The PESDxV4UF series belongs to Nexperia's ESD protection portfolio, engineered specifically for space-constrained portable electronics where ultra-low capacitance, high ESD immunity, and miniature packaging are critical for signal integrity and reliability.
FAQ
What is the maximum operating temperature for PESD5V0V4UF,115?
The PESD5V0V4UF,115 has a maximum junction temperature of 150 °C and operates across an ambient temperature range of −65 °C to +150 °C. This wide thermal envelope supports deployment in harsh environments such as automotive infotainment modules or industrial handheld scanners where internal board temperatures exceed 100 °C under sustained load.
Does PESD5V0V4UF,115 support bidirectional signal protection?
No, PESD5V0V4UF,115 is a unidirectional ESD protection device, configured with cathodes tied to protected lines and common anodes referenced to ground. It is intended for signals that remain positive relative to ground, such as USB D+/D− or SIM CLK/DATA. For bidirectional protection, a separate dual-diode array or different topology is required.
How does the dual common-anode structure of PESD5V0V4UF,115 affect PCB layout?
The dual common-anode structure (pins 2 and 5) in PESD5V0V4UF,115 allows independent grounding of two diode pairs-critical for minimizing ground loop coupling between protected signal groups. Layout best practice requires separate low-inductance ground traces from each common anode to a solid ground plane, avoiding shared return paths that could compromise ESD suppression effectiveness.
Can PESD5V0V4UF,115 be used for IEC 61000-4-5 surge protection?
Yes, PESD5V0V4UF,115 is rated for 1.5 A peak pulse current (8/20 µs waveform) per diode under IEC 61000-4-5 surge conditions, delivering 16 W peak pulse power. It is validated for secondary-level surge protection in conjunction with upstream TVS or GDT devices-not as a standalone primary surge suppressor-but effectively clamps induced surges on data lines in consumer-grade equipment.
What is the marking code for PESD5V0V4UF,115?
The marking code for PESD5V0V4UF,115 is "A8", laser-etched on the top surface of the SOT886 package. This 2-character code is consistent across all PESD5V0V4UF variants and enables rapid visual identification during incoming inspection or rework verification on production lines.
PESD5V0V4UF,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- 6-XFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6.4V
- Voltage - Clamping (Max) @ Ipp:
- 13V
- Current - Peak Pulse (10/1000µs):
- 1.5A (8/20µs)
- Power - Peak Pulse:
- 16W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 12pF @ 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-XSON, SOT886 (1.45x1)
PESD5V0V4UF,115 FAQ
1.How can I place an order for PESD5V0V4UF,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD5V0V4UF,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD5V0V4UF,115 reliable?
The price and inventory of PESD5V0V4UF,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD5V0V4UF,115 is usually 5 days.
3.What payment methods are accepted for PESD5V0V4UF,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD5V0V4UF,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD5V0V4UF,115?
PESD5V0V4UF,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD5V0V4UF,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD5V0V4UF,115?
For technical support, including PESD5V0V4UF,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD5V0V4UF,115 requirements.
6.How does Aetrix verify that PESD5V0V4UF,115 is sourced from the original manufacturer or authorized distributors?
All PESD5V0V4UF,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD5V0V4UF,115 meets industry standards.
7.What is the process for return or replacement of PESD5V0V4UF,115?
All PESD5V0V4UF,115 units undergo pre-shipment inspection (PSI). If there is an issue with PESD5V0V4UF,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD5V0V4UF,115 part is unused and in its original packaging.
Return procedure for PESD5V0V4UF,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD5V0V4UF,115 Tags
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ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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