Nexperia USA Inc. PESD5V5C1ULYL

Overview

PESD5V5C1UL from Nexperia is a unidirectional ESD protection diode in DFN1006-2 (SOD882-2) package, designed for single-line high-speed data line protection. It delivers 0.5 pF typical capacitance, ±15 kV IEC 61000-4-2 ESD rating, and 3.5 V clamping voltage at 8 A TLP, enabling robust protection of USB2.0/3.0 interfaces operating up to 5 Gbps.

For engineers reviewing the PESD5V5C1UL datasheet, PESD5V5C1UL pinout, PESD5V5C1UL application, or PESD5V5C1UL equivalent, key selection criteria include ultra-low capacitance for signal integrity, low clamping voltage for sensitive I/O protection, IEC 61000-4-2/4-5 compliance, and compatibility with high-speed serial data lines requiring minimal parasitic loading.

Technical Context

This unidirectional ESD diode uses a snap-back clamping structure that exhibits negative dynamic resistance during transient events, reducing clamping voltage under ESD stress. Its operation relies on controlled avalanche breakdown at ≥7 V and maintains sub-100 nA leakage at 5.5 V reverse standoff.

The device is optimized for bidirectional signal lines where polarity relative to ground varies, with clamping behavior validated for both positive and negative TLP pulses (100 ns and 5 ns waveforms). Dynamic resistance is specified at 0.3 Ω under 10 A forward current, ensuring low-voltage drop during surge conduction.

Key Specifications

Pinout & Package

Package: DFN1006-2 (SOD882-2), leadless surface-mount plastic package; body dimensions 1.0 × 0.6 × 0.47 mm; cathode marked on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional ESD protection applications.

Compared with NUP4105MR6T1G and VEML3020X01, PESD5V5C1UL offers the lowest capacitance (0.5 pF) and tightest clamping (3.5 V), making it optimal for USB3.0 and HDMI high-speed interfaces where signal fidelity and I/O voltage headroom are critical.

Availability

PESD5V5C1UL is available at Aetrix Electronics and suitable for USB3.0 interface protection, mobile device charging port hardening, and HDMI source channel safeguarding requiring stable component supply across production lifecycles.

Supply support for PESD5V5C1UL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-performance, reliable standard-logic and power MOSFETs, ESD protection, and analog devices, serving automotive, industrial, and consumer markets.

PESD5V5C1UL belongs to the TrEOS Protection family, engineered specifically for ultra-low-capacitance, high-fidelity ESD protection of high-speed serial data interfaces in space-constrained portable electronics.

FAQ

What is the maximum recommended trace length between PESD5V5C1UL and the protected connector?

Trace length must be ≤2 mm from device anode to connector pin and ≤3 mm from cathode to solid ground plane. Longer traces increase inductance, degrading clamping performance during fast ESD transients (e.g., 1 ns rise time). PCB layout guidelines require direct via stitching from cathode pad to internal ground plane with ≥2 vias.

Can PESD5V5C1UL protect bidirectional signal lines like USB D+/D−?

Yes - though unidirectional, it protects bidirectional data lines when cathode is grounded and anode connected to the signal. During negative excursions, the diode remains reverse-biased until voltage reaches −15 kV ESD level, where intrinsic junction behavior provides symmetrical clamping via substrate paths and package parasitics validated per IEC 61000-4-2.

Does PESD5V5C1UL require series impedance on the protected line?

No series resistor is required for ESD protection function. However, a 0 Ω or low-value (≤10 Ω) resistor may be added for board-level debugging or to damp resonance with trace inductance. The device's 0.3 Ω dynamic resistance and snap-back behavior ensure effective clamping without external impedance.

How does PESD5V5C1UL behave after an ESD event-does it recover automatically?

Yes - PESD5V5C1UL fully recovers to its pre-event state within nanoseconds after transient dissipation. No latch-up or parameter shift occurs, as confirmed by TLP testing showing repeatable 3.5 V clamping over 1000+ pulses. It requires no reset or power cycle and maintains <100 nA leakage post-event at 5.5 V bias.