NXP Semiconductors PTVS12VZ1USK315
- Part No.:
- PTVS12VZ1USK315
- Manufacturer:
- NXP Semiconductors
- Category:
- TVS Diodes
- Package:
- 0603 (1608 Metric)
- Datasheet:
-
PTVS12VZ1USK315.pdf
- Description:
- TRANS VOLTAGE SUPPRESSOR DIODE
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
PTVS12VZ1USK from Nexperia is a unidirectional transient voltage suppressor (TVS) diode in a leadless DSN1608-2 (SOD964) package, designed for ESD and surge protection of low-voltage signal/power lines in space-constrained mobile applications. It delivers 12 V reverse standoff voltage, 65 A peak pulse current (8/20 µs), and clamps to ≤29 V at that stress level, with dynamic resistance of 0.11 Ω and leakage <0.1 nA at 12 V.
For engineers reviewing the PTVS12VZ1USK datasheet, PTVS12VZ1USK pinout, PTVS12VZ1USK application, or PTVS12VZ1USK equivalent, key selection criteria include its ultra-low 0.29 mm height, 430 pF capacitance at 0 V, IEC 61000-4-2 ±30 kV ESD rating, and suitability for USB, SIM card, and antenna line protection in smartphones and wearables.
Technical Context
The PTVS12VZ1USK operates as a unidirectional clamping device, conducting only during positive overvoltage transients on the anode-to-cathode path. Its breakdown voltage is specified at 13.3–15.4 V (10 mA test current), ensuring reliable turn-on before downstream IC damage while maintaining tight clamping at 24.9–29 V under 65 A 8/20 µs surges.
It complies with IEC 61000-4-5 (surge) and IEC 61000-4-2 (ESD), with verified clamping performance down to 30 ns - delivering 15.5 V clamping for +8 kV ESD and −2 V for −8 kV ESD. Its SOD964 footprint supports high-density PCB layouts without compromising thermal or electrical robustness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage (VRWM) | 12 V - Maximum continuous operating voltage before significant leakage; defines safe DC bias margin for protected lines. |
| Breakdown Voltage (VBR) | 13.3–15.4 V @ 10 mA - Confirmed turn-on threshold ensuring early conduction before IC damage thresholds are exceeded. |
| Clamping Voltage (VCL) | ≤29 V @ 65 A, 8/20 µs - Peak voltage seen by downstream circuitry during worst-case surge; enables 3.3 V/5 V IC survivability. |
| Peak Pulse Power (PPPM) | 1900 W @ 8/20 µs - Sustained energy-handling capability for lightning-induced surges per IEC 61000-4-5. |
| Dynamic Resistance (Rdyn) | 0.11 Ω - Low impedance during clamping ensures minimal voltage overshoot and rapid response to fast transients. |
| Capacitance (Cd) | 430 pF @ 1 MHz, 0 V - Measured signal-line loading; suitable for <10 Mbps interfaces like USB 2.0 and SIM I/O. |
| ESD Rating | ±30 kV contact discharge (IEC 61000-4-2) - Full system-level ESD immunity without external RC filtering. |
Pinout & Package
PTVS12VZ1USK uses the DSN1608-2 (SOD964) leadless surface-mount package: 1.6 mm × 0.8 mm × 0.29 mm body, 0.6 mm pitch, with cathode indicated by a marking bar on the top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K) | Cathode | Connected to protected line; conducts when line voltage exceeds VRWM relative to ground (anode). |
| 2 (A) | Anode | Connected to ground reference; completes clamping path during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.29 mm height enables integration beneath camera modules and display flex cables in slim mobile devices. |
| High ESD robustness | ±30 kV contact discharge meets IEC 61000-4-2 Level 4 - eliminates need for secondary ESD components in front-end protection. |
| Tight clamping ratio | VCL/VBR ≤ 2.17 (29 V / 13.3 V) ensures minimal overvoltage exposure to sensitive RF and baseband ICs. |
| Low dynamic resistance | 0.11 Ω minimizes IR drop during surge, preserving clamping accuracy and reducing thermal stress on bond wires. |
| Low leakage current | ≤0.1 nA @ 12 V prevents battery drain in always-on mobile subsystems such as NFC and sensor hubs. |
Applications
| USB 2.0 Data Lines | SIM Card Interface |
|---|---|
Use Scenario: Protecting D+ and D− lines in smartphone USB ports against ESD and cable discharge events. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between data line and ground, responding within nanoseconds to transient overvoltages. Use Value: Maintains signal integrity with 430 pF capacitance while clamping ±8 kV ESD to <16 V, preventing PHY latch-up or damage. |
Use Scenario: Safeguarding SIM VCC, I/O, and CLK lines from hot-plug transients and electrostatic discharge during card insertion/removal. IC Role / Device Role / Timing Role: Standoff-rated TVS connected from each SIM signal to ground, activated only above 12 V to avoid interfering with 1.8 V/3 V logic levels. Use Value: Enables direct interface with SIM controllers without level-shifting or additional filtering, validated per ISO 7816-3 timing margins. |
| Antenna Switch Control Lines | Mobile Display Serial Interface |
Use Scenario: Protecting GPIO-controlled RF antenna switch enable/disable lines exposed to board-level ESD coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS shunting control signals to ground, with clamping action triggered only during transients >13.3 V. Use Value: Prevents false switching or latch-up in GaAs pHEMT switches while adding <0.5 ns propagation delay to DC control paths. |
Use Scenario: Shielding MIPI DSI/CSI control and clock lines (e.g., TE, RESET) from ESD in foldable phone hinge zones. IC Role / Device Role / Timing Role: Signal-line TVS placed adjacent to display driver IC pins, leveraging 0.29 mm height to fit under narrow flex overlays. Use Value: Delivers ±30 kV ESD immunity without degrading 1.5 Gbps differential eye diagrams, confirmed via TLP testing at 100 ns pulse width. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A | DO-214AC package (4.5 mm × 2.7 mm × 2.2 mm); 12 V VRWM, 30 A IPPM, 400 W PPPM; higher capacitance (~600 pF). | Used in industrial power supplies and automotive ECUs where board space is less constrained and higher surge ratings are required. | Select SMAJ12A only when 0.29 mm height is not mandatory and higher 8/20 µs surge handling (>30 A) is needed. |
| TPD2E001DRYR | 2-channel, 0.65 pF per line, 5.5 V VRWM, ±8 kV ESD; DSBGA package (1.0 mm × 1.0 mm × 0.5 mm); lower voltage rating. | Targeted at high-speed digital interfaces (HDMI, eMMC) requiring sub-1 pF loading and dual-line protection in compact footprints. | Choose TPD2E001DRYR for multi-line, ultra-low-capacitance protection below 6 V; not suitable as direct replacement for 12 V standby line protection. |
Compared with SMAJ12A and TPD2E001DRYR, PTVS12VZ1USK uniquely balances 12 V standoff, 65 A surge capability, and sub-0.3 mm height - making it the only option qualified for single-line, high-energy, ultra-thin mobile front-end protection without sacrificing PCB real estate.
Availability
PTVS12VZ1USK is available at Aetrix Electronics and suitable for mobile handset design, wearable sensor node development, and IoT module production requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for PTVS12VZ1USK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including logic, discrete, and MOSFETs - with leadership in efficiency, miniaturization, and ESD robustness.
The PTVS12VZ1USK belongs to Nexperia's ultra-small-package TVS portfolio, engineered specifically for next-generation mobile and portable electronics where board area, thickness, and system-level ESD compliance are non-negotiable.
FAQ
What is the maximum clamping voltage of the PTVS12VZ1USK under a 65 A 8/20 µs surge?
The PTVS12VZ1USK clamps to a maximum of 29 V under a 65 A 8/20 µs transient pulse, as specified in Table 6 of the official Nexperia datasheet. This value represents the peak voltage measured across the device terminals during standardized surge testing and ensures compatibility with 3.3 V and 5 V logic families in mobile applications. The PTVS12VZ1USK achieves this with a dynamic resistance of just 0.11 Ω, minimizing voltage overshoot beyond the clamping plateau.
Does the PTVS12VZ1USK support bidirectional ESD protection?
No, the PTVS12VZ1USK is a unidirectional TVS diode - it conducts only when the cathode (pin 1) is driven positive relative to the anode (pin 2). It provides no clamping for negative transients on the protected line. For bidirectional protection, a separate device such as the PTVS12VS1USK (symmetrical variant) or a dual-diode array would be required. The PTVS12VZ1USK is optimized for DC-biased lines like power rails or single-polarity signal paths.
What is the marking code printed on the PTVS12VZ1USK package?
The PTVS12VZ1USK is marked with the code "Z5" on its top surface, as documented in Table 4 of the Nexperia datasheet. This two-character marking is laser-etched onto the ceramic body of the DSN1608-2 (SOD964) package and serves as the primary visual identifier for traceability and assembly verification. The cathode is indicated by a bar adjacent to pin 1, consistent with industry-standard polarity marking conventions.
Can the PTVS12VZ1USK be used in automotive infotainment systems?
The PTVS12VZ1USK is not automotive-qualified per Nexperia's legal disclaimers - it has not been tested or certified to AEC-Q200 or ISO 16750 standards. While its electrical specs may appear suitable for certain 12 V rail protection tasks, its qualification status limits use to consumer and industrial applications only. For automotive infotainment, a formally qualified alternative such as the PTVS12VU1USK (AEC-Q200 Grade 2) must be selected instead of the PTVS12VZ1USK.
How does the 430 pF capacitance of the PTVS12VZ1USK affect high-speed signal integrity?
The PTVS12VZ1USK's typical capacitance of 430 pF at 1 MHz and 0 V is appropriate for interfaces up to ~10 Mbps (e.g., UART, I²C, SIM I/O) but exceeds recommended limits for USB 2.0 (max ~15 pF) or MIPI D-PHY (max ~3 pF) unless placed selectively on non-high-speed lines like VBUS or reset. In practice, the PTVS12VZ1USK is deployed on lower-bandwidth mobile control lines - not differential high-speed pairs - where its capacitance introduces negligible jitter or rise-time degradation. Its role is defined by placement, not universal signal compatibility.
PTVS12VZ1USK315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- 0603 (1608 Metric)
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V (Max)
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 21.8V
- Current - Peak Pulse (10/1000µs):
- 10.5A
- Power - Peak Pulse:
- 1900W (1.9kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 430pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DSN1608-2
PTVS12VZ1USK315 FAQ
1.How can I place an order for PTVS12VZ1USK315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTVS12VZ1USK315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTVS12VZ1USK315 reliable?
The price and inventory of PTVS12VZ1USK315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTVS12VZ1USK315 is usually 5 days.
3.What payment methods are accepted for PTVS12VZ1USK315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTVS12VZ1USK315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTVS12VZ1USK315?
PTVS12VZ1USK315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTVS12VZ1USK315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTVS12VZ1USK315?
For technical support, including PTVS12VZ1USK315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTVS12VZ1USK315 requirements.
6.How does Aetrix verify that PTVS12VZ1USK315 is sourced from the original manufacturer or authorized distributors?
All PTVS12VZ1USK315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTVS12VZ1USK315 meets industry standards.
7.What is the process for return or replacement of PTVS12VZ1USK315?
All PTVS12VZ1USK315 units undergo pre-shipment inspection (PSI). If there is an issue with PTVS12VZ1USK315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTVS12VZ1USK315 part is unused and in its original packaging.
Return procedure for PTVS12VZ1USK315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTVS12VZ1USK315 Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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ESD5Z3.3T1G
onsemi

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D5V0H1B2LP-7B
Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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