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NXP Semiconductors PTVS13VP1UP/WD115
- Part No.:
- PTVS13VP1UP/WD115
- Manufacturer:
- NXP Semiconductors
- Category:
- TVS Diodes
- Package:
- SOD-128
- Datasheet:
-
PTVS13VP1UP/WD115.pdf
- Description:
- TRANS VOLTAGE SUPPRESSOR DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:7,256
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Product details
Overview
PTVS13VP1UP/WD115 from NXP Semiconductors is a unidirectional 600 W Transient Voltage Suppressor (TVS) in SOD128 surface-mount package, designed for high-temperature transient overvoltage protection in automotive and industrial power rails. It features 13 V reverse standoff voltage (VRWM), 21.5 V clamping voltage (VCL) at 5 A, 0.001 µA reverse leakage current, and AEC-Q101 qualification for under-hood applications.
For engineers reviewing the PTVS13VP1UP/WD115 datasheet, PTVS13VP1UP/WD115 pinout, PTVS13VP1UP/WD115 application, or PTVS13VP1UP/WD115 equivalent, key selection criteria include peak pulse power derating above 25 °C, junction temperature limit of 185 °C, IEC 61643-321 compliance, and cathode/anode polarity identification via marking bar.
Technical Context
This unidirectional TVS diode operates as a clamping device that conducts only when reverse voltage exceeds VRWM = 13 V, with breakdown occurring at VBR = 14.4–15.9 V (min–max) at 5 mA. Its clamping action limits transient-induced voltage to ≤21.5 V at IPPM = 27.9 A (typical), enabling robust protection of downstream 12 V automotive electronics.
Thermal design relies on low Rth(j-a) = 120 K/W (on FR4, single-sided copper) and Rth(j-sp) = 12 K/W (to solder point), supporting stable operation up to Tamb = +185 °C. ESD robustness meets IEC 61000-4-2 level 4 (30 kV contact discharge) and MIL-STD-883 class 3B (>8 kV HBM).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 600 W (IEC 61643-321 10/1000 µs waveform; defines maximum transient energy absorption capability) |
| Reverse Standoff Voltage | VRWM = 13 V (maximum continuous reverse voltage before significant leakage; sets operating margin for 12 V systems) |
| Clamping Voltage | VCL = 21.5 V at IPPM = 27.9 A (peak voltage seen by protected circuit during worst-case surge; ensures safe margin below IC absolute max ratings) |
| Reverse Leakage Current | IRM = 0.001 µA at VRWM (negligible standby power loss; critical for battery-powered or low-quiescent-current designs) |
| Junction Temperature Limit | Tj ≤ 185 °C (enables reliable operation in under-hood automotive environments without thermal shutdown) |
| ESD Rating | 30 kV contact discharge (IEC 61000-4-2 level 4; eliminates need for additional ESD stages in CAN/LIN bus interfaces) |
| AEC-Q101 Qualified | Qualified per Automotive Electronics Council stress test standard for discrete semiconductors (validates reliability for automotive production use) |
Pinout & Package
SOD128 is a flat-lead, surface-mount plastic package with 1 mm profile height, optimized for automated assembly and high-density PCB layouts. Cathode is marked by a bar on the package body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to protected line (e.g., 12 V rail); conduction occurs when voltage at this terminal exceeds anode by >VBR |
| 2 | Anode | Connected to ground or low-impedance return path; completes clamping current path during transients |
Key Features
| Feature | Design Value |
|---|---|
| High-Temperature Stability | Rated for continuous operation at Tamb = −55 °C to +185 °C and Tj ≤ 185 °C - enables placement near heat sources in engine control units |
| Low-Profile SMD Package | SOD128 footprint (4.4 × 2.7 mm, 1 mm height) supports compact layout and reflow compatibility without tombstoning risk |
| Automotive-Grade Qualification | AEC-Q101 qualification confirms suitability for production automotive applications including powertrain, body control, and ADAS modules |
| IEC 61643-321 Compliance | Validated for 10/1000 µs surge waveforms - ensures predictable clamping behavior against lightning-induced and load-dump transients |
| Ultra-Low Reverse Leakage | IRM = 0.001 µA at VRWM minimizes parasitic drain in always-on circuits such as CAN wake-up receivers |
Applications
| Automotive Power Supply Protection | Industrial 24 V DC Input Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from ISO 7637-2 load dump and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between battery rail and input filter capacitor. Use Value: Limits transient voltage to ≤21.5 V while absorbing 600 W pulses, preventing damage to LDOs and microcontrollers rated for 28 V absolute max. |
Use Scenario: Safeguarding programmable logic controllers (PLCs) against field-wiring induced transients on 24 V DC inputs. IC Role / Device Role / Timing Role: Primary surge suppression stage ahead of DC-DC converter and signal conditioning circuitry. Use Value: Withstands repeated 10/1000 µs surges up to 600 W and maintains <0.001 µA leakage at 24 V nominal, ensuring long-term reliability in factory automation environments. |
| Automotive CAN Bus Interface Protection | High-Temperature Sensor Signal Line Protection |
Use Scenario: Shielding CAN-H/CAN-L lines in vehicle infotainment gateways exposed to ESD and coupled noise. IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS connected between each bus line and chassis ground. Use Value: Provides 30 kV IEC 61000-4-2 ESD immunity without distorting 1 Mbps CAN signaling due to minimal parasitic capacitance (<100 pF typical). |
Use Scenario: Protecting analog outputs of exhaust gas temperature (EGT) sensors operating at >150 °C ambient. IC Role / Device Role / Timing Role: Clamping diode mounted adjacent to sensor connector to suppress cable-borne transients before reaching signal conditioner. Use Value: Maintains functional stability up to Tj = 185 °C and exhibits only 11.4 mV/K temperature coefficient of VBR - minimizing drift in precision voltage reference paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ13A (ON Semiconductor) | Same VRWM (13 V), but lower PPPM = 400 W; SMA package (higher Rth(j-a) ≈ 150 K/W); not AEC-Q101 qualified | Limited to non-automotive industrial use; unsuitable for under-hood deployment due to lower temperature rating (Tj ≤ 150 °C) | Select only for cost-sensitive, non-automotive 12 V systems where 400 W surge capacity suffices. |
| TPSMF13A (STMicroelectronics) | Same VRWM (13 V), identical SOD128 package, PPPM = 600 W, but Tj ≤ 175 °C and no published IEC 61643-321 validation | Acceptable for industrial control, but lacks AEC-Q101 certification and full IEC surge compliance documentation required for Tier 1 automotive sourcing. | Prefer for industrial applications requiring same form factor and power rating, but verify qualification status per program requirements. |
Compared with SMAJ13A and TPSMF13A, PTVS13VP1UP/WD115 delivers superior high-temperature performance (Tj ≤ 185 °C), full IEC 61643-321 validation, and AEC-Q101 certification - making it the only option qualified for production automotive power rail protection where thermal and reliability margins are non-negotiable.
Availability
PTVS13VP1UP/WD115 is available at Aetrix Electronics and suitable for automotive power supply protection, industrial 24 V DC input protection, and high-temperature sensor signal line protection requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for PTVS13VP1UP/WD115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PTVSxP1UTP series was developed specifically for high-reliability transient suppression in automotive and industrial environments where extreme temperature resilience and standardized surge compliance are mandatory.
FAQ
What is the clamping voltage of PTVS13VP1UP/WD115 at its rated peak pulse current?
The clamping voltage VCL of PTVS13VP1UP/WD115 is 21.5 V at IPPM = 27.9 A (typical), measured under IEC 61643-321 10/1000 µs waveform conditions. This value ensures protected circuits remain within safe operating limits during surge events. The PTVS13VP1UP/WD115 datasheet specifies VCL ≤ 21.5 V at 5 A test current, confirming consistent clamping performance across its operational range.
Is PTVS13VP1UP/WD115 qualified for automotive applications?
Yes, PTVS13VP1UP/WD115 is AEC-Q101 qualified per the Automotive Electronics Council standard for discrete semiconductors, validating its reliability for production automotive use. It is explicitly rated for junction temperatures up to 185 °C and meets IEC 61000-4-2 level 4 ESD requirements. The PTVS13VP1UP/WD115 qualification data is documented in NXP's official product data sheet Rev. 1 (2011).
What package type does PTVS13VP1UP/WD115 use, and what are its key mechanical dimensions?
PTVS13VP1UP/WD115 uses the SOD128 surface-mount plastic package, measuring 4.4 mm × 2.7 mm with a maximum height of 1.0 mm. Its flat-lead construction supports automated pick-and-place and reflow soldering, and the cathode is identified by a marking bar on the package body. These dimensions are defined in NXP's Package Outline Figure 6 and confirmed in the PTVS13VP1UP/WD115 ordering information section.
How does PTVS13VP1UP/WD115 perform at elevated temperatures?
PTVS13VP1UP/WD115 maintains full functionality up to junction temperature Tj = 185 °C and ambient temperature Tamb = +185 °C, with derated peak pulse power scaling per Figure 2 in the datasheet. Its temperature coefficient of breakdown voltage is +11.4 mV/K, ensuring predictable clamping behavior across temperature extremes. This thermal performance is intrinsic to the PTVS13VP1UP/WD115 design and validated per AEC-Q101 stress testing.
What is the reverse leakage current specification for PTVS13VP1UP/WD115 at its rated standoff voltage?
The reverse leakage current IRM of PTVS13VP1UP/WD115 is 0.001 µA maximum at VRWM = 13 V and Tj = 25 °C, as specified in Table 10 of the NXP datasheet. This ultra-low leakage minimizes standby power loss in always-on automotive subsystems. The PTVS13VP1UP/WD115 retains sub-nA leakage even at elevated temperatures, supporting energy-efficient designs in battery-critical applications.
PTVS13VP1UP/WD115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- SOD-128
- Series:
- PTVSxP1UP
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V (Max)
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 27.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CFP5
PTVS13VP1UP/WD115 FAQ
1.How can I place an order for PTVS13VP1UP/WD115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTVS13VP1UP/WD115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTVS13VP1UP/WD115 reliable?
The price and inventory of PTVS13VP1UP/WD115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTVS13VP1UP/WD115 is usually 5 days.
3.What payment methods are accepted for PTVS13VP1UP/WD115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTVS13VP1UP/WD115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTVS13VP1UP/WD115?
PTVS13VP1UP/WD115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTVS13VP1UP/WD115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTVS13VP1UP/WD115?
For technical support, including PTVS13VP1UP/WD115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTVS13VP1UP/WD115 requirements.
6.How does Aetrix verify that PTVS13VP1UP/WD115 is sourced from the original manufacturer or authorized distributors?
All PTVS13VP1UP/WD115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTVS13VP1UP/WD115 meets industry standards.
7.What is the process for return or replacement of PTVS13VP1UP/WD115?
All PTVS13VP1UP/WD115 units undergo pre-shipment inspection (PSI). If there is an issue with PTVS13VP1UP/WD115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTVS13VP1UP/WD115 part is unused and in its original packaging.
Return procedure for PTVS13VP1UP/WD115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTVS13VP1UP/WD115 Tags
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