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Nexperia USA Inc. PTVS3V3S1UTR,115
- Part No.:
- PTVS3V3S1UTR,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- SOD-123W
- Datasheet:
-
PTVS3V3S1UTR,115.pdf
- Description:
- TVS DIODE 3.3VWM 8VC SOD123W
- Quantity:
- Payment:
- Shipping:
Inventory:3,062
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Product details
Overview
PTVS3V3S1UTR,115 from Nexperia is a unidirectional 3.3 V transient voltage suppressor (TVS) diode in SOD123W (CFP3) package, rated for 350 W peak pulse power (10/1000 µs), with 5.2–6.0 V breakdown voltage, 8.0 V clamping voltage at 43.8 A, and operation up to 185 °C junction temperature - deployed for overvoltage protection on 3.3 V power rails in high-temperature industrial control modules.
For engineers reviewing the PTVS3V3S1UTR,115 datasheet, PTVS3V3S1UTR,115 pinout, PTVS3V3S1UTR,115 application, or PTVS3V3S1UTR,115 equivalent, key selection criteria include clamping performance at 43.8 A, thermal resistance to solder point (18 K/W), cathode-anode polarity marking, and compatibility with reflow-soldered SOD123W footprints in space-constrained, high-reliability power management designs.
Technical Context
This unidirectional TVS diode operates as a clamping device triggered by reverse-biased avalanche breakdown above VRWM = 3.3 V. Its V-I characteristic follows IEC 61643-321 (10/1000 µs waveform), delivering precise clamping at VCL = 8.0 V when subjected to IPPM = 43.8 A.
Designed for high-temperature environments, it maintains stable electrical parameters up to Tj = 185 °C, with low IRM = 0.001 µA at VRWM and a negative temperature coefficient of SZ = −1.0 mV/K - enabling predictable overvoltage response across extended thermal ranges without derating-induced failure modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 3.3 V - maximum continuous reverse operating voltage before clamping activation; defines safe operating margin for 3.3 V supply rail protection. |
| VBR (min–max) | 5.20–6.00 V at IR = 10 mA - guaranteed avalanche initiation range; ensures reliable turn-on before system-level damage occurs. |
| VCL @ IPPM | 8.0 V at 43.8 A - clamped voltage during 350 W transient; limits downstream IC stress to sub-8.0 V during ESD or surge events. |
| PPPM | 350 W (10/1000 µs) - peak pulse power rating specific to PTVS3V3S1UTR; lower than series' 400 W due to lower VRWM and higher current density. |
| Tj max | 185 °C - maximum junction temperature; enables deployment in under-hood, motor drive, or furnace controller environments without thermal shutdown. |
| Rth(j-sp) | 18 K/W - thermal resistance from junction to cathode solder point; supports effective heat dissipation into PCB copper when mounted per recommended footprint. |
| IRM | 0.001 µA at VRWM - ultra-low leakage current; prevents measurable standby power loss in battery-backed or energy-sensitive systems. |
Pinout & Package
SOD123W (CFP3) surface-mount plastic package: 2.6 mm × 1.7 mm × 1.0 mm body height, flat lead profile, cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K) | Cathode | Connected to protected line (e.g., 3.3 V rail); marking bar identifies this terminal; carries full surge current during clamping. |
| 2 (A) | Anode | Connected to ground reference; completes low-impedance path during transient; must be routed with minimal inductance to maintain clamping speed. |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature operation | Junction-rated to 185 °C - eliminates derating requirements in industrial motor drives and power converters operating near thermal limits. |
| Low-profile SMD package | 1.0 mm max height - enables use in ultra-thin power modules and stacked PCB assemblies where Z-axis clearance is constrained. |
| Precision clamping at low VRWM | VCL = 8.0 V @ 43.8 A - provides 2.3× overvoltage margin above 3.3 V rail while staying below typical 10 V IC absolute maximum ratings. |
| ESD robustness | 30 kV contact discharge (IEC 61000-4-2) - withstands handling and field ESD without parameter shift or failure in automated test and assembly lines. |
| Thermal interface efficiency | Rth(j-sp) = 18 K/W - enables direct thermal coupling to PCB ground plane via cathode pad, reducing thermal impedance by >60% vs. junction-to-ambient. |
Applications
| Industrial Power Supply Protection | Automated Test Equipment (ATE) Front-End |
|---|---|
|
Use Scenario: Protecting 3.3 V microcontroller I/O and sensor interface rails against switching transients from adjacent relay drivers or solenoid loads in PLC backplanes. IC Role / Device Role: Unidirectional clamping TVS placed directly at connector entry point, shunting surges to local ground before reaching sensitive logic. Use Value: Limits transient voltage to ≤8.0 V at 43.8 A, preventing latch-up or gate oxide damage in 3.3 V CMOS devices while maintaining <1 µA leakage during normal operation. |
Use Scenario: Safeguarding precision analog front-end inputs (e.g., ADC references, op-amp bias networks) in modular ATE fixtures exposed to cable discharge events. IC Role / Device Role: Low-leakage, low-capacitance TVS mounted adjacent to SMA connectors to clamp fast-rising ESD pulses before signal integrity degradation. Use Value: Delivers 30 kV ESD immunity with only 0.001 µA IRM, avoiding DC offset errors or reference drift in µV-level measurement circuits. |
| Motor Drive Control Board | High-Temperature Sensor Node |
|
Use Scenario: Shielding isolated 3.3 V communication interfaces (e.g., RS-485 transceiver VCC) from ground bounce and inductive kickback in variable-frequency drives. IC Role / Device Role: Primary overvoltage clamp on auxiliary supply rail, thermally coupled to heatsink-adjacent ground pour for sustained surge handling. Use Value: Maintains clamping performance up to 185 °C junction temperature, eliminating thermal runaway risk during prolonged overload conditions in enclosed enclosures. |
Use Scenario: Protecting battery-powered wireless sensor nodes deployed in furnace monitoring or exhaust gas analysis systems operating continuously above 125 °C ambient. IC Role / Device Role: Standby-mode TVS on 3.3 V LDO output, leveraging ultra-low IRM to preserve multi-year battery life while surviving thermal cycling. Use Value: Combines 185 °C Tj rating with 0.001 µA leakage to ensure >10-year operational reliability without parameter drift or premature failure in harsh thermal environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ3.3A | DO-214AC package; 400 W PPPM; VBR = 4.8–5.4 V; VCL = 9.8 V @ 36.7 A; Rth(j-a) ≈ 50 K/W | Larger footprint (4.5 × 2.7 mm); higher clamping voltage; lower thermal efficiency | Select when board space allows larger package and higher clamping voltage is acceptable for legacy layout reuse. |
| TPSMA6L3.3 | SMA package; 600 W PPPM; VBR = 4.8–5.4 V; VCL = 8.8 V @ 68.2 A; Tj max = 150 °C | Higher power rating but lower temperature limit; no 185 °C qualification | Choose only for non-high-temp applications requiring higher surge margin; avoid in >150 °C ambient deployments. |
Compared with SMAJ3.3A and TPSMA6L3.3, PTVS3V3S1UTR,115 offers superior thermal resilience (185 °C vs. ≤150 °C), tighter clamping (8.0 V vs. ≥8.8 V), and compact SOD123W packaging - making it the sole option qualified for sustained operation in high-temperature industrial power electronics where thermal derating and board area are critical constraints.
Availability
PTVS3V3S1UTR,115 is available at Aetrix Electronics and suitable for industrial power supply protection, motor drive control boards, automated test equipment front-ends, and high-temperature sensor nodes requiring stable component supply across extended product lifecycles.
Supply support for PTVS3V3S1UTR,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard logic, discrete, and MOSFET solutions, with leadership in automotive and industrial-grade components.
The PTVSxS1UTR series is part of Nexperia's high-temperature TVS portfolio, engineered specifically for robust transient suppression in demanding industrial, power conversion, and harsh-environment applications where thermal stability and long-term parametric consistency are mandatory.
FAQ
What is the maximum clamping voltage of PTVS3V3S1UTR,115 under rated surge conditions?
The clamping voltage VCL is 8.0 V at a peak pulse current IPPM of 43.8 A, measured per IEC 61643-321 (10/1000 µs waveform). This value is guaranteed across the full operating temperature range and represents the maximum voltage seen by downstream circuitry during a 350 W transient event.
How does the SOD123W package improve thermal performance compared to standard SMA or DO-214AC packages?
The SOD123W package achieves Rth(j-sp) = 18 K/W - significantly lower than SMA (≈40 K/W) or DO-214AC (≈50 K/W) - due to its flat, low-profile cathode tab optimized for direct thermal conduction to PCB copper. This enables efficient heat transfer during repetitive surges and extends reliability in high-temperature ambient conditions.
Can PTVS3V3S1UTR,115 be used in bidirectional protection configurations?
No - PTVS3V3S1UTR,115 is a unidirectional TVS diode with cathode/anode polarity. It conducts only during reverse-biased overvoltage events. For bidirectional protection (e.g., AC lines or data lines), a separate symmetric TVS array or dual-diode configuration is required; this part is not internally configured for bidirectional operation.
What is the significance of the −1.0 mV/K temperature coefficient for this TVS diode?
The negative temperature coefficient (SZ = −1.0 mV/K) means the breakdown voltage VBR decreases by approximately 1.0 mV per degree Celsius rise in junction temperature. This behavior ensures consistent clamping onset across wide thermal ranges and avoids dangerous over-clamping at elevated temperatures - a critical feature for high-temperature industrial deployments.
PTVS3V3S1UTR,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- SOD-123W
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V
- Voltage - Breakdown (Min):
- 5.2V
- Voltage - Clamping (Max) @ Ipp:
- 8V
- Current - Peak Pulse (10/1000µs):
- 43.8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 185°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123W
PTVS3V3S1UTR,115 FAQ
1.How can I place an order for PTVS3V3S1UTR,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTVS3V3S1UTR,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTVS3V3S1UTR,115 reliable?
The price and inventory of PTVS3V3S1UTR,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTVS3V3S1UTR,115 is usually 5 days.
3.What payment methods are accepted for PTVS3V3S1UTR,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTVS3V3S1UTR,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTVS3V3S1UTR,115?
PTVS3V3S1UTR,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTVS3V3S1UTR,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTVS3V3S1UTR,115?
For technical support, including PTVS3V3S1UTR,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTVS3V3S1UTR,115 requirements.
6.How does Aetrix verify that PTVS3V3S1UTR,115 is sourced from the original manufacturer or authorized distributors?
All PTVS3V3S1UTR,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTVS3V3S1UTR,115 meets industry standards.
7.What is the process for return or replacement of PTVS3V3S1UTR,115?
All PTVS3V3S1UTR,115 units undergo pre-shipment inspection (PSI). If there is an issue with PTVS3V3S1UTR,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTVS3V3S1UTR,115 part is unused and in its original packaging.
Return procedure for PTVS3V3S1UTR,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTVS3V3S1UTR,115 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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