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Nexperia USA Inc. PTVS3V3S1UTR-QX
- Part No.:
- PTVS3V3S1UTR-QX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- SOD-123W
- Datasheet:
-
PTVS3V3S1UTR-QX.pdf
- Description:
- PTVS3V3S1UTR-Q/SOD123W/SOD2
- Quantity:
- Payment:
- Shipping:
Inventory:9,796
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PTVS3V3S1UTR-QX from Nexperia is a unidirectional 3.3 V transient voltage suppressor (TVS) diode in SOD123W (CFP3) package, rated for 350 W peak pulse power (10/1000 µs), 8.0 V clamping voltage at 43.8 A peak current, and qualified to AEC-Q101 for automotive power rail protection against ESD and surge events.
For engineers reviewing the PTVS3V3S1UTR-QX datasheet, PTVS3V3S1UTR-QX pinout, PTVS3V3S1UTR-QX application, or PTVS3V3S1UTR-QX equivalent, this device is selected for high-temperature (Tj ≤ 185 °C), low-profile (1 mm height), surface-mounted overvoltage protection where precise 3.3 V standoff and sub-1 µA leakage at VRWM are critical.
Technical Context
This TVS operates as a unidirectional avalanche clamp with cathode-anode polarity, triggered when reverse voltage exceeds 3.3 V standoff and clamps transients to ≤8.0 V at 43.8 A. Its junction-to-solder-point thermal resistance is 18 K/W, enabling stable operation up to 185 °C junction temperature.
It complies with IEC 61643-321 (10/1000 µs waveform) and achieves ±30 kV ESD immunity per IEC 61000-4-2 (contact/air discharge), with breakdown voltage tightly specified at 5.2–6.0 V (min–max) and temperature coefficient of –1.0 mV/K.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 3.3 V reverse standoff voltage - defines maximum continuous operating voltage before clamping begins |
| VBR (min–max) | 5.20–6.00 V at 10 mA - ensures reliable avalanche initiation across process and temperature |
| VCL @ IPPM | 8.0 V at 43.8 A - limits downstream circuit voltage during worst-case surge |
| PPPM | 350 W (10/1000 µs) - sustains high-energy transients without failure in automotive environments |
| IRM | 0.001 µA at VRWM - minimizes standby power loss in battery-sensitive 3.3 V systems |
| Tj max | 185 °C - supports under-hood and engine-control module placement without derating |
| ESD rating | ±30 kV contact / ±30 kV air - exceeds ISO 10605 for automotive ESD robustness |
Pinout & Package
PTVS3V3S1UTR-QX uses the CFP3 (SOD123W) surface-mount plastic package: 2.6 mm × 1.7 mm × 1.0 mm body, flat lead profile, cathode marked by a bar on the top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K) | Cathode | Connected to protected line (e.g., 3.3 V rail); marking bar identifies this terminal |
| 2 (A) | Anode | Connected to ground reference; completes clamping path during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and ESD stress per discrete semiconductor standard |
| High-temperature stability | Junction operation up to 185 °C enables placement near power converters and ECUs without thermal derating |
| Low-profile SOD123W package | 1.0 mm height allows routing beneath connectors or in space-constrained PCB layouts |
| Sub-micron reverse leakage | 0.001 µA at 3.3 V reduces quiescent current drain in always-on 3.3 V domains |
| Controlled clamping ratio | VCL/VRWM = 2.42 ensures predictable voltage margin above 3.3 V rail while limiting IC stress |
Applications
| Automotive Body Control Module (BCM) | Industrial 3.3 V Sensor Interface |
|---|---|
Use Scenario: Protecting LIN bus or microcontroller I/O pins in BCMs exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role: Unidirectional TVS placed between 3.3 V supply and ground to clamp fast transients before they reach MCU GPIO or LIN transceiver inputs. Use Value: Prevents latch-up or permanent damage to 3.3 V logic circuits during vehicle-level surges while maintaining <1 µA standby leakage. |
Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) connected to 3.3 V ADC inputs in factory automation equipment. IC Role / Device Role: Low-capacitance TVS on signal lines to absorb ESD from operator handling and nearby relay switching noise. Use Value: Ensures signal integrity remains intact during 8 kV HBM and ±30 kV system-level ESD events without affecting 12-bit ADC accuracy. |
| Automotive Infotainment Power Rail | High-Temperature IoT Edge Node |
Use Scenario: Guarding the 3.3 V core supply of infotainment SoCs located near HVAC actuators and display drivers. IC Role / Device Role: Primary overvoltage clamp on PMIC output, coordinated with upstream fuses and secondary LC filtering. Use Value: Withstands repeated 350 W surges at 150 °C ambient, eliminating need for thermal derating in sealed enclosures. |
Use Scenario: Protecting battery-backed real-time clock and wireless MCU supply in oil-field telemetry nodes operating at 125 °C ambient. IC Role / Device Role: Standoff-rated TVS on coin-cell or supercap backup rail to prevent overcharge and transient-induced reset. Use Value: Maintains 3.3 V regulation integrity with <0.001 µA leakage at elevated temperature, extending battery life beyond 10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ3.3A-Q | Higher VBR (4.8–5.4 V), lower PPPM (400 W but only 300 W at Tj > 85 °C), larger SMA package (2.4 mm height) | Less suitable for space-constrained automotive modules requiring 1 mm profile and full 185 °C operation | Select when board layout allows taller profile and thermal management is less aggressive |
| TPSMA6L3.3A | Same VBR range (4.8–5.4 V), higher clamping (9.8 V @ 35.7 A), AEC-Q101 qualified, but no 185 °C Tj rating | Not rated for sustained operation above 150 °C junction - unsuitable for under-hood power management | Prefer for non-automotive industrial 3.3 V rails where ambient stays below 105 °C |
Compared with SMAJ3.3A-Q and TPSMA6L3.3A, PTVS3V3S1UTR-QX uniquely combines 1 mm height, 185 °C junction rating, and 350 W pulse capability at 3.3 V standoff - making it the only option for compact, high-temperature automotive power rail protection.
Availability
PTVS3V3S1UTR-QX is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor interfaces, and high-temperature IoT edge nodes requiring stable component supply with AEC-Q101 traceability and long-lifecycle support.
Supply support for PTVS3V3S1UTR-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.
The PTVSxS1UTR-Q series was developed specifically for AEC-Q101-compliant transient suppression in high-temperature automotive power systems, emphasizing low-profile packaging, tight parametric distribution, and extended junction temperature operation.
FAQ
What is the maximum clamping voltage for PTVS3V3S1UTR-QX at its rated peak pulse current?
The clamping voltage (VCL) is 8.0 V at 43.8 A peak pulse current (IPPM), measured per IEC 61643-321 10/1000 µs waveform. This value is guaranteed across temperature and process variation, ensuring downstream 3.3 V ICs remain within absolute maximum ratings during surge events.
Is PTVS3V3S1UTR-QX suitable for bidirectional signal line protection?
No - PTVS3V3S1UTR-QX is a unidirectional TVS diode with cathode-anode polarity. It protects only against negative transients on the anode (ground) side and positive transients on the cathode (line) side. For bidirectional protection (e.g., USB, RS-485), a symmetric device such as PTVS3V3S2UTR-Q must be used.
How does the –1.0 mV/K temperature coefficient affect its 3.3 V standoff performance?
The negative temperature coefficient means VRWM decreases by 1.0 mV per °C rise in junction temperature. At 150 °C, VRWM drops ~125 mV from its 25 °C value, resulting in ~3.175 V standoff - still safely above typical 3.3 V rail tolerances (±5%), ensuring no false triggering during thermal transients.
Can PTVS3V3S1UTR-QX replace older PTVS3V3S1UR devices in existing designs?
Yes - PTVS3V3S1UTR-QX is the automotive-grade (AEC-Q101) successor to PTVS3V3S1UR, sharing identical electrical specs, SOD123W footprint, and pinout. The "-QX" suffix denotes enhanced reliability testing and tighter parametric screening, with no layout or schematic changes required for drop-in replacement.
PTVS3V3S1UTR-QX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- SOD-123W
- Series:
- PTVSxS1UTR
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.2V
- Voltage - Clamping (Max) @ Ipp:
- 8V
- Current - Peak Pulse (10/1000µs):
- 43.8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 185°C (TA)
- Grade:
- Automotive
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123W
PTVS3V3S1UTR-QX FAQ
1.How can I place an order for PTVS3V3S1UTR-QX through Aetrix?
Please submit a Request for Quotation (RFQ) for PTVS3V3S1UTR-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTVS3V3S1UTR-QX reliable?
The price and inventory of PTVS3V3S1UTR-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTVS3V3S1UTR-QX is usually 5 days.
3.What payment methods are accepted for PTVS3V3S1UTR-QX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTVS3V3S1UTR-QX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTVS3V3S1UTR-QX?
PTVS3V3S1UTR-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTVS3V3S1UTR-QX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTVS3V3S1UTR-QX?
For technical support, including PTVS3V3S1UTR-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTVS3V3S1UTR-QX requirements.
6.How does Aetrix verify that PTVS3V3S1UTR-QX is sourced from the original manufacturer or authorized distributors?
All PTVS3V3S1UTR-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTVS3V3S1UTR-QX meets industry standards.
7.What is the process for return or replacement of PTVS3V3S1UTR-QX?
All PTVS3V3S1UTR-QX units undergo pre-shipment inspection (PSI). If there is an issue with PTVS3V3S1UTR-QX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTVS3V3S1UTR-QX part is unused and in its original packaging.
Return procedure for PTVS3V3S1UTR-QX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTVS3V3S1UTR-QX Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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