Nexperia USA Inc. PTVS58VP1UP,115
- Part No.:
- PTVS58VP1UP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- SOD-128
- Datasheet:
-
PTVS58VP1UP,115.pdf
- Description:
- TVS DIODE 58VWM 93.6VC SOD128
- Quantity:
- Payment:

- Shipping:

Inventory:44,478
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Product details
Overview
PTVS58VP1UP,115 from Nexperia is a unidirectional 600 W Transient Voltage Suppressor (TVS) in SOD128 (CFP5) package, designed for high-energy transient overvoltage protection on DC power rails. It features a 58 V reverse standoff voltage (VRWM), 64.4–71.2 V breakdown voltage (VBR), 93.6 V clamping voltage (VCL) at 6.4 A peak pulse current (IPPM), and <0.001 µA reverse leakage at VRWM - optimized for industrial power supply surge immunity.
For engineers reviewing the PTVS58VP1UP,115 datasheet, PTVS58VP1UP,115 pinout, PTVS58VP1UP,115 application, or PTVS58VP1UP,115 equivalent, key selection criteria include clamping performance under IEC 61643-321 10/1000 µs waveform, thermal resistance to solder point (Rth(j-sp) = 12 K/W), AEC-Q101 qualification status, and compatibility with FR4 PCB layouts using standard CFP5 reflow footprints.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: it remains high-impedance below VRWM = 58 V, then avalanches sharply at VBR (min 64.4 V) to divert transients while limiting downstream voltage to ≤93.6 V at IPPM = 6.4 A. Its response is defined by IEC 61643-321 10/1000 µs waveform compliance.
Thermal design relies on low-profile SOD128 packaging (1 mm height) and direct cathode-tab thermal path (Rth(j-sp) = 12 K/W), enabling effective power dissipation in space-constrained industrial modules. Junction temperature is rated up to 150 °C, with storage range from −65 °C to 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPPM) | 600 W - sustains single 10/1000 µs surges per IEC 61643-321 without failure |
| Reverse Standoff Voltage (VRWM) | 58 V - maximum continuous DC operating voltage before significant leakage |
| Breakdown Voltage (VBR) | 64.4–71.2 V @ IR = 1 mA - precise avalanche onset threshold for predictable clamping |
| Clamping Voltage (VCL) | 93.6 V @ IPPM = 6.4 A - limits protected circuit voltage during worst-case transient |
| Reverse Leakage (IRM) | <0.001 µA @ VRWM - negligible standby power loss in always-on systems |
| ESD Rating | 30 kV contact discharge (IEC 61000-4-2) - robust handling of system-level ESD events |
| Thermal Resistance (Rth(j-sp)) | 12 K/W - enables efficient heat transfer from junction to PCB solder point |
Pinout & Package
PTVS58VP1UP,115 uses the SOD128 (CFP5) surface-mount plastic package: 2-terminal, 3.8 mm × 2.6 mm × 1.0 mm body, 4 mm lead pitch, flat lead profile optimized for automated assembly and thermal relief. The cathode is marked by a visible bar on the device top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K) | Cathode | Connected to protected line (e.g., +VDC rail); carries full transient current during clamping |
| 2 (A) | Anode | Connected to ground reference; forms low-impedance return path for surge energy |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse rating | Enables protection against severe load-dump and ISO 7637-2 pulses in industrial 48 V systems |
| SOD128 package height ≤1 mm | Supports ultra-thin power modules and stacked PCB assemblies with strict Z-axis constraints |
| AEC-Q101 qualified | Validated for automotive-grade reliability (per revision history v.3, PTVS58VP1UP included in qualified list) |
| Low Rth(j-sp) = 12 K/W | Reduces thermal derating needs in high-ambient-temperature environments (e.g., enclosed control cabinets) |
| 0.001 µA IRM at VRWM | Minimizes quiescent current impact in battery-backed or energy-harvesting applications |
Applications
| Industrial Power Supply Protection | 48 V DC Motor Drive Input Stage |
|---|---|
|
Use Scenario: Protecting AC/DC and DC/DC converter outputs against lightning-induced surges and inductive switching spikes in factory automation PLCs. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between +VOUT and GND, clamping transients within 1 ns after onset. Use Value: Limits output voltage to ≤93.6 V during 600 W surges, preventing damage to downstream regulators and microcontrollers. |
Use Scenario: Safeguarding H-bridge gate drivers and current-sense amplifiers from back-EMF spikes during motor commutation in robotic actuators. IC Role / Device Role / Timing Role: TVS mounted directly across motor power input terminals to clamp fast-rising inductive kickback. Use Value: Clamps 10/1000 µs transients to 93.6 V at 6.4 A, preserving MOSFET gate oxide integrity and analog front-end accuracy. |
| Telecom Remote Radio Unit (RRU) | Renewable Energy Charge Controller |
|
Use Scenario: Securing PoE-powered baseband units against induced surges from nearby lightning strikes on outdoor cabling infrastructure. IC Role / Device Role / Timing Role: Primary DC rail protector on 48 V input, coordinated with upstream GDT and downstream π-filter. Use Value: Delivers 600 W surge handling with <0.001 µA leakage, avoiding interference with sensitive RF signal chains. |
Use Scenario: Protecting solar charge controller inputs from grid-switching transients and PV array open-circuit voltage spikes during cloud-edge events. IC Role / Device Role / Timing Role: Bidirectional-capable system uses two unidirectional TVS devices (anode-to-rail and cathode-to-rail) for enhanced margin. Use Value: Withstands repeated 600 W pulses while maintaining VRWM = 58 V tolerance for 48 V nominal battery banks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A (Bourns) | Same VRWM (58 V), but SMB package (2.4 mm height); Rth(j-a) = 40 K/W vs. 60 K/W for SOD128 | Higher profile limits use in ultra-low-height enclosures; lower thermal efficiency requires larger copper pour | Select when legacy SMB footprint compatibility is required and board height >2.4 mm is acceptable |
| SMCJ58A (Littelfuse) | 600 W rating, VRWM = 58 V, but SMC package (2.6 mm height); IPPM = 7.2 A, VCL = 93.6 V | Higher IPPM supports longer-duration transients; larger pad area needed for thermal management | Prefer for higher-reliability industrial designs where 2.6 mm Z-height and proven field history outweigh size constraints |
Compared with PTVS58VP1UP,115, SMBJ58A trades compactness for broader footprint compatibility, while SMCJ58A offers higher surge current headroom at the cost of 2.6× greater height - making the Nexperia device optimal for space-constrained, thermally dense 48 V power nodes.
Availability
PTVS58VP1UP,115 is available at Aetrix Electronics and suitable for industrial power supply protection, 48 V motor drive input stages, telecom remote radio units, and renewable energy charge controllers requiring stable component supply and long-term manufacturability.
Supply support for PTVS58VP1UP,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The PTVSxP1UP series belongs to Nexperia's transient protection portfolio, engineered specifically for robust, low-profile DC rail protection in harsh electromagnetic environments with emphasis on AEC-Q101 compliance and IEC 61643-321 surge resilience.
FAQ
Is PTVS58VP1UP,115 qualified for automotive applications?
Yes - per the revision history (v.3, December 2025), PTVS58VP1UP is explicitly included in the list of AEC-Q101-qualified products. It meets stress test requirements for discrete semiconductors in automotive environments, including temperature cycling, humidity bias, and mechanical shock testing.
What is the maximum allowable junction temperature during surge events?
The absolute maximum junction temperature is 150 °C. Under a 600 W, 10/1000 µs pulse, junction temperature rise depends on thermal path: with Rth(j-sp) = 12 K/W and typical PCB copper, ΔT ≈ 72 °C - keeping Tj well within limit if ambient is ≤78 °C.
How does the marking code 'BH' correspond to PTVS58VP1UP?
Per Table 4 of the datasheet, 'BH' is the official marking code laser-etched on the device top surface. It uniquely identifies the PTVS58VP1UP variant within the PTVSxP1UP series and matches the 58 V VRWM specification - used for visual and automated optical inspection during assembly.
Can PTVS58VP1UP,115 be used in bidirectional configurations?
No - it is strictly unidirectional. For bidirectional protection, two PTVS58VP1UP,115 devices must be connected in series opposition (anode-to-anode or cathode-to-cathode), or a dedicated bidirectional TVS such as PTVS58VU1UP should be selected instead.
PTVS58VP1UP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- SOD-128
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.4V
- Voltage - Clamping (Max) @ Ipp:
- 93.6V
- Current - Peak Pulse (10/1000µs):
- 6.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-128/CFP5
PTVS58VP1UP,115 FAQ
1.How can I place an order for PTVS58VP1UP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTVS58VP1UP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTVS58VP1UP,115 reliable?
The price and inventory of PTVS58VP1UP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTVS58VP1UP,115 is usually 5 days.
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Once your PTVS58VP1UP,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTVS58VP1UP,115?
For technical support, including PTVS58VP1UP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTVS58VP1UP,115 requirements.
6.How does Aetrix verify that PTVS58VP1UP,115 is sourced from the original manufacturer or authorized distributors?
All PTVS58VP1UP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTVS58VP1UP,115 meets industry standards.
7.What is the process for return or replacement of PTVS58VP1UP,115?
All PTVS58VP1UP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PTVS58VP1UP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTVS58VP1UP,115 part is unused and in its original packaging.
Return procedure for PTVS58VP1UP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTVS58VP1UP,115 Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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ESD5Z3.3T1G
onsemi

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D5V0H1B2LP-7B
Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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