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Nexperia USA Inc. PTVS5V0Z1USKYL
- Part No.:
- PTVS5V0Z1USKYL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- 0603 (1608 Metric)
- Datasheet:
-
PTVS5V0Z1USKYL.pdf
- Description:
- TVS DIODE 5VWM 12VC DSN1608-2
- Quantity:
- Payment:
- Shipping:
Inventory:50,990
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Product details
Overview
PTVS5V0Z1USK from Nexperia is a unidirectional transient voltage suppressor (TVS) diode in a DSN1608-2 (SOD964) leadless package, designed for ESD and surge protection of low-voltage DC lines in space-constrained mobile electronics. It delivers 1200 W peak pulse power (8/20 µs), clamps at ≤18 V under 80 A surge, and exhibits 0.06 Ω dynamic resistance with only 0.29 mm height - enabling robust protection on battery rails and USB interfaces.
For engineers reviewing the PTVS5V0Z1USK datasheet, PTVS5V0Z1USK pinout, PTVS5V0Z1USK application, or PTVS5V0Z1USK equivalent, key selection criteria include its 5 V reverse standoff voltage, sub-0.025 µA leakage at VRWM, 1200 W IEC 61000-4-5 compliance, ultra-low profile for thin mobile PCBs, and verified ±30 kV IEC 61000-4-2 ESD immunity.
Technical Context
This unidirectional TVS operates as a clamping device across a single DC line and ground, triggered when transient voltage exceeds its 6.4–7.8 V breakdown threshold (VBR at 10 mA). Its low dynamic resistance (0.06 Ω) ensures rapid voltage suppression during fast transients like ESD or lightning-induced surges.
The device is characterized for two standard waveforms: 8/20 µs (IEC 61000-4-5) delivering up to 80 A and 1200 W, and 10/1000 µs (IEC 61643-321) supporting 20 A and 200 W. Clamping voltage remains ≤12 V at 20 A and ≤18 V at 80 A, ensuring safe operation for 5 V logic and power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 5 V reverse standoff voltage - maintains <0.025 µA leakage during normal 5 V rail operation without loading. |
| VBR | 6.4–7.8 V at 10 mA - defines precise turn-on threshold for overvoltage detection and clamping initiation. |
| VCL (80 A) | ≤18 V clamping voltage (8/20 µs) - limits downstream IC stress to safe levels during high-energy surges. |
| PPPM | 1200 W peak pulse power (8/20 µs) - enables protection against severe IEC 61000-4-5 Level 4 surges. |
| Rdyn | 0.06 Ω dynamic resistance - minimizes voltage overshoot and improves clamping response time under fast transients. |
| ESD Rating | ±30 kV contact/air discharge (IEC 61000-4-2) - eliminates need for external ESD filters on exposed ports. |
| Capacitance | 1200 pF at 1 MHz, 0 V - suitable for DC power and low-speed signal lines; not recommended for >10 Mbps data lines. |
Pinout & Package
PTVS5V0Z1USK uses the DSN1608-2 (SOD964) leadless surface-mount package: 1.6 mm × 0.8 mm × 0.29 mm body, 0.6 mm pitch, with cathode marked by a bar on the top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K) | Cathode | Connected to protected line (e.g., VBUS); conducts during positive transients when voltage exceeds VBR. |
| 2 (A) | Anode | Connected to ground; completes clamping path during overvoltage events, enabling low-impedance surge shunting. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.29 mm height - fits under mechanical shields and enables stacking in slim smartphones and wearables. |
| High surge robustness | 80 A peak pulse current (8/20 µs) - withstands repeated IEC 61000-4-5 surges without degradation. |
| Low dynamic impedance | 0.06 Ω Rdyn - reduces clamping voltage overshoot and improves energy handling consistency across pulses. |
| Low leakage | 0.025 µA IRM at 5 V - avoids battery drain in always-on mobile subsystems such as PMIC standby rails. |
| ESD-hardened construction | ±30 kV IEC 61000-4-2 rating - protects USB-C, SIM card slots, and button interfaces without additional ESD stages. |
Applications
| USB Power Delivery Interface | Smartphone Battery Protection |
|---|---|
|
Use Scenario: Protecting VBUS line in USB-C receptacles against hot-plug surges and cable-induced transients. IC Role / Device Role: Unidirectional clamping TVS placed between VBUS and GND, activated only during positive overvoltage events. Use Value: Limits VBUS overshoot to ≤18 V during 80 A surges, preventing damage to USB PD controllers and load switches rated for 20 V max. |
Use Scenario: Safeguarding lithium-ion battery input terminals from ESD and charger insertion spikes. IC Role / Device Role: Standoff-rated TVS on BAT+ rail, conducting only when transient exceeds 6.4 V while remaining fully blocking at 4.4 V nominal. Use Value: Enables <0.025 µA standby leakage - critical for multi-week shelf life in shipped devices without battery drain. |
| IoT Sensor Node Power Rail | Wearable Display Backlight Driver |
|
Use Scenario: Protecting 3.3 V or 5 V supply inputs of BLE/Wi-Fi modules from electrostatic discharge during handling and field deployment. IC Role / Device Role: Primary ESD clamp on main system rail, absorbing ±30 kV contact discharges before reaching PMIC inputs. Use Value: Delivers full IEC 61000-4-2 immunity without requiring series impedance or RC filtering - simplifying layout and reducing BOM count. |
Use Scenario: Shielding white LED driver ICs from inductive kickback and touch-induced transients on boost converter output lines. IC Role / Device Role: Low-capacitance (1200 pF) TVS placed at driver output, clamping flyback spikes without distorting PWM dimming signals. Use Value: Maintains stable 5 V rail clamping while adding negligible capacitance to high-impedance feedback nodes - preserving regulation accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ5.0A | DO-214AC package (4.5 mm × 2.7 mm × 2.3 mm); 600 W PPPM; 10.8 V VCL @ 12.5 A | Larger footprint and higher clamping voltage - unsuitable for ultra-thin mobile PCBs or 5 V logic-level protection. | Select only if board space allows larger SMC/SMA packages and surge requirements are ≤600 W. |
| TPSMD5.0 | DO-214AB package (7.1 mm × 6.2 mm × 2.6 mm); 1500 W PPPM; 14.4 V VCL @ 100 A | Higher power but 25× larger volume - used in industrial power supplies, not portable consumer devices. | Choose for high-energy AC/DC front-end protection where size is secondary to energy absorption. |
Compared with SMAJ5.0A and TPSMD5.0, PTVS5V0Z1USK provides the smallest form factor and lowest clamping voltage for 5 V systems, making it uniquely suited for modern mobile and wearable designs where height and leakage are design-critical constraints.
Availability
PTVS5V0Z1USK is available at Aetrix Electronics and suitable for smartphone power management, USB-C interface protection, and wearable battery rail stabilization requiring stable component supply across high-volume production cycles.
Supply support for PTVS5V0Z1USK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in ESD protection, MOSFETs, and analog solutions.
This device belongs to Nexperia's PTVS series of ultra-compact unidirectional TVS diodes, engineered specifically for ESD and surge resilience in battery-powered portable electronics with strict height and leakage budgets.
FAQ
What is the maximum operating temperature for PTVS5V0Z1USK?
The junction temperature must not exceed 150 °C, and the ambient operating range is –40 °C to +125 °C. Derating of peak pulse power begins above 25 °C, with typical PPPM dropping to ~70% of rated value at 100 °C junction temperature per Figure 6 in the datasheet.
Can PTVS5V0Z1USK be used for bidirectional protection?
No - it is a unidirectional TVS diode with cathode (pin 1) and anode (pin 2) terminals. It conducts only during positive transients on the cathode relative to anode. For bidirectional protection, a separate symmetric device like PTVS5V0S1USK or a dual-diode array is required.
Is the 1200 W rating applicable to continuous operation?
No - the 1200 W rating applies only to non-repetitive 8/20 µs pulses per IEC 61000-4-5. The device is not rated for continuous power dissipation; thermal design must ensure junction temperature stays within absolute maximum limits during transient events.
How is polarity identified on the DSN1608-2 package?
The cathode (pin 1) is marked by a visible bar on the top surface of the DSN1608-2 package. The marking code "Z2" appears adjacent to this bar, confirming orientation per Figure 16 in the Nexperia datasheet.
PTVS5V0Z1USKYL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- 0603 (1608 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6.4V
- Voltage - Clamping (Max) @ Ipp:
- 12V
- Current - Peak Pulse (10/1000µs):
- 20A
- Power - Peak Pulse:
- 200W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 1200pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DSN1608-2
PTVS5V0Z1USKYL FAQ
1.How can I place an order for PTVS5V0Z1USKYL through Aetrix?
Please submit a Request for Quotation (RFQ) for PTVS5V0Z1USKYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTVS5V0Z1USKYL reliable?
The price and inventory of PTVS5V0Z1USKYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTVS5V0Z1USKYL is usually 5 days.
3.What payment methods are accepted for PTVS5V0Z1USKYL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTVS5V0Z1USKYL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTVS5V0Z1USKYL?
PTVS5V0Z1USKYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTVS5V0Z1USKYL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTVS5V0Z1USKYL?
For technical support, including PTVS5V0Z1USKYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTVS5V0Z1USKYL requirements.
6.How does Aetrix verify that PTVS5V0Z1USKYL is sourced from the original manufacturer or authorized distributors?
All PTVS5V0Z1USKYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTVS5V0Z1USKYL meets industry standards.
7.What is the process for return or replacement of PTVS5V0Z1USKYL?
All PTVS5V0Z1USKYL units undergo pre-shipment inspection (PSI). If there is an issue with PTVS5V0Z1USKYL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTVS5V0Z1USKYL part is unused and in its original packaging.
Return procedure for PTVS5V0Z1USKYL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTVS5V0Z1USKYL Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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