Nexperia USA Inc. PUSB3AB2DFZ

Overview

PUSB3AB2DF from Nexperia is a symmetrical bidirectional ESD protection diode array in a DFN0603-3 (SOT8013) package, designed to protect two signal lines with 0.26 pF typical capacitance, ±20 kV IEC 61000-4-2 contact discharge rating, and 3.7 V clamping voltage at 4 A TLP current-used in high-speed USB 3.0/3.1 data line protection.

For engineers reviewing the PUSB3AB2DF datasheet, PUSB3AB2DF pinout, PUSB3AB2DF application, or PUSB3AB2DF equivalent, key selection criteria include ultra-low capacitance for signal integrity, sub-4 V clamping for sensitive I/Os, bidirectional symmetry for AC-coupled lines, and DFN0603-3 footprint compatibility with space-constrained portable PCB layouts.

Technical Context

This device implements a snap-back clamping structure with negative dynamic resistance, enabling rapid transition into low-voltage conduction during ESD transients while maintaining <0.3 Ω dynamic resistance at ±5 A. Its bidirectional symmetry supports both positive and negative signal excursions relative to ground without polarity constraints.

The ultra-low 0.26 pF capacitance at 1 MHz and 0 V bias ensures minimal insertion loss up to 11.8 GHz (−3 dB), preserving signal fidelity on high-speed differential pairs such as USB SuperSpeed lanes. The DFN0603-3 package's short internal inductance path minimizes transient overshoot during fast-rising ESD events.

Key Specifications

Pinout & Package

Package: DFN0603-3 (SOT8013), plastic ultra-small leadless SMD package; 0.63 mm × 0.33 mm × 0.25 mm body; 0.225 mm pitch; three terminals; recommended for surface-mount reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional ESD protection applications.

Compared with ESD9B5.0ST5G, PUSB3AB2DF offers lower clamping and capacitance for USB 3.x; versus VEML3020-001, it delivers higher ESD immunity at only +0.06 pF penalty-making it optimal for certified high-speed interface protection.

Availability

PUSB3AB2DF is available at Aetrix Electronics and suitable for USB 3.0/3.1 interface protection, mobile display interconnects, and high-speed industrial serial links requiring stable component supply and guaranteed long-term sourcing.

Supply support for PUSB3AB2DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, reliability, and miniaturization.

PUSB3AB2DF belongs to the TrEOS family of ultra-low-capacitance ESD protection devices, engineered specifically for high-speed digital interfaces including USB, HDMI, MIPI, and PCIe where signal integrity and compact layout are critical.

FAQ

What is the recommended PCB layout for PUSB3AB2DF?

Place the device within 2 mm of the protected connector, route protected traces directly to pins 1 and 2 with minimum stub length, connect pin 3 to a solid ground plane using ≥2 vias, and avoid routing unprotected signals parallel to protected lines. Use the exact DFN0603-3 footprint from Figure 12 with 0.08 mm stencil thickness.

Can PUSB3AB2DF be used on single-ended signals?

Yes-it supports single-ended applications like USB 2.0 D+/D− or UART lines, but its bidirectional symmetry and low capacitance make it especially effective on differential pairs. For single-ended use, connect one protected line to pin 1 or 2 and ground pin 3; the unused cathode remains floating with no impact on performance.

Does PUSB3AB2DF require external bias or control signals?

No-it operates passively with no power supply, enable pin, or configuration. Conduction occurs only during overvoltage transients via intrinsic snap-back behavior; no DC bias, pull-ups, or series resistors are needed for basic ESD protection functionality.

How does PUSB3AB2DF's clamping performance compare to TVS diodes in larger packages?

Its 3.7 V clamping at 4 A and 0.3 Ω dynamic resistance match or exceed many 0402/0603 TVS devices, while its DFN0603-3 package achieves 50% lower parasitic inductance than SOD-323 equivalents-reducing peak let-through voltage by up to 1.2 V during 1 ns ESD rise times.