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Nexperia USA Inc. PUSB3BB4Z
- Part No.:
- PUSB3BB4Z
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- 10-XFDFN
- Datasheet:
-
PUSB3BB4Z.pdf
- Description:
- PUSB3BB4/SOT1176/XSON10
- Quantity:
- Payment:
- Shipping:
Inventory:9,817
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PUSB3BB4Z from Nexperia is an extremely low capacitance bidirectional ESD protection diode array in a DFN2510A-10 (SOT1176-2) package, designed to protect four high-speed signal lines-such as USB3.2 and HDMI2.1 data lanes-against ±15 kV IEC 61000-4-2 ESD events, with 0.17 pF typical diode capacitance at 1.5 V and 5.4 V clamping voltage at 6.5 A (8/20 µs).
For engineers reviewing the PUSB3BB4Z datasheet, PUSB3BB4Z pinout, PUSB3BB4Z application, or PUSB3BB4Z equivalent, this device supports high-fidelity signal integrity in compact portable electronics where sub-0.2 pF loading and robust transient immunity are critical for maintaining eye diagram compliance and system-level ESD robustness.
Technical Context
The PUSB3BB4Z implements a snap-back clamping structure with negative dynamic resistance, enabling ultra-low clamping voltage (5.4 V @ 6.5 A) during ESD transients while maintaining 3.3 V reverse standoff voltage. Its bidirectional architecture protects AC-coupled or differential signal pairs without polarity constraints.
It meets IEC 61000-4-4 (40 A EFT into 50 Ω) and IEC 61000-4-5 (8.3 A surge peak), and its 0.17 pF capacitance ensures minimal signal distortion on >10 Gbps interfaces. The DFN2510A-10 package provides low-inductance ground paths via dual GND pins (pins 3 and 8) and optimized trace routing for transient return.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | ±3.3 V - Ensures no leakage or conduction during normal 3.3 V signal operation, preserving DC bias integrity. |
| Cd | 0.17 pF typical @ 1.5 V - Enables use on USB3.2 Gen2 (10 Gbps) and HDMI2.1 TMDS channels without measurable insertion loss. |
| VCL @ 6.5 A | 5.4 V - Limits voltage seen by downstream PHY to safe levels during 8/20 µs surges, protecting 1.8 V/3.3 V I/Os. |
| ESD Rating | ±15 kV HBM per IEC 61000-4-2 - Meets industrial and consumer end-equipment level 4 ESD immunity requirements. |
| IEC 61000-4-4 | 40 A @ 50 Ω - Withstands electrical fast transients common in noisy power environments without degradation. |
| Surge Rating | 8.3 A peak pulse (IEC 61000-4-5) - Handles lightning-induced surges on externally connected ports like USB-C receptacles. |
Pinout & Package
DFN2510A-10 (SOT1176-2) is a leadless, ultra-thin surface-mount package measuring 1.0 × 2.5 × 0.5 mm, featuring exposed thermal pad compatibility and dual GND terminals for low-inductance transient discharge.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | CH1 | ESD protection path for first bidirectional signal line (e.g., USB3.2 TX1+) |
| 2 | CH2 | ESD protection path for second bidirectional signal line (e.g., USB3.2 TX1−) |
| 3 | GND | Primary low-inductance ground return for CH1–CH2 clamping current |
| 4 | CH3 | ESD protection path for third bidirectional signal line (e.g., USB3.2 RX1+) |
| 5 | CH4 | ESD protection path for fourth bidirectional signal line (e.g., USB3.2 RX1−) |
| 8 | GND | Secondary low-inductance ground return for CH3–CH4 clamping current, reducing loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Protects AC-coupled differential pairs (e.g., USB3.2, HDMI2.1) without requiring signal polarity alignment. |
| Snap-back dynamic behavior | Reduces clamping voltage under ESD stress by leveraging negative resistance, improving downstream IC survivability. |
| Dual GND terminals | Minimizes transient ground loop inductance across four protected channels, critical for GHz-frequency signal fidelity. |
| Ultra-low 0.17 pF capacitance | Preserves signal rise/fall times and eye opening on 10+ Gbps serial links without equalization overhead. |
Applications
| USB3.2 Gen2 Interface Protection | HDMI2.1 TMDS Channel Protection |
|---|---|
Use Scenario: Protecting SuperSpeed USB 10 Gbps differential pairs in laptop docking stations and external SSD enclosures. IC Role / Device Role: Bidirectional ESD clamp placed immediately adjacent to USB-C connector, shunting transients before reaching USB3.2 controller PHY. Use Value: Maintains <1% signal attenuation at 5 GHz while surviving ±15 kV contact discharge per IEC 61000-4-2. |
Use Scenario: Safeguarding HDMI2.1 48 Gbps TMDS lanes in AV receivers and gaming monitors against connector ESD. IC Role / Device Role: Four-channel ESD suppressor mounted at HDMI Type-A receptacle, with dedicated GND returns for each differential pair. Use Value: Enables full 48 Gbps bandwidth with <0.2 dB insertion loss up to 12 GHz due to sub-0.2 pF loading. |
| Smartphone High-Speed Data Lines | Portable SSD NVMe Interface Protection |
Use Scenario: Shielding MIPI D-PHY or USB3.1 data lines in slim smartphone PCBs where layout space is constrained. IC Role / Device Role: Compact 1.0 × 2.5 mm ESD array protecting two differential lanes (e.g., USB3.1 TX/RX) with shared ground plane coupling. Use Value: Achieves 3.3 V working voltage and 5.4 V clamping without compromising RF isolation near cellular antennas. |
Use Scenario: Securing PCIe Gen3 x2 NVMe data lanes in M.2 2230 SSD modules used in ultrabooks and tablets. IC Role / Device Role: Low-capacitance ESD protection placed between NAND controller and M.2 edge connector, minimizing jitter accumulation. Use Value: Delivers <0.18 pF channel-to-ground capacitance, ensuring PCIe Gen3 eye mask compliance after ESD stress testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor ESD9B5.0ST5G | Unidirectional, 5.0 V VRWM, 0.35 pF capacitance, SOT-523 package | Requires separate devices per signal polarity; higher capacitance limits use to ≤5 Gbps interfaces | Select when cost sensitivity outweighs speed requirement and unidirectional bias is acceptable. |
| Vishay VEML6030X01 | Not applicable - optical sensor, not ESD protection device | N/A | Excluded: misidentified part; not functionally comparable. |
Compared with PUSB3BB4Z, ESD9B5.0ST5G offers lower unit cost but sacrifices 0.18 pF capacitance margin and bidirectional capability-making it unsuitable for AC-coupled USB3.2 or HDMI2.1. No valid second alternative meets all four-channel, sub-0.2 pF, ±3.3 V, and bidirectional criteria.
Availability
PUSB3BB4Z is available at Aetrix Electronics and suitable for USB3.2 Gen2 interface protection, HDMI2.1 TMDS channel safeguarding, and portable SSD NVMe lane shielding requiring stable component supply and guaranteed long-term manufacturability.
Supply support for PUSB3BB4Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-performance, energy-efficient logic, analog, and ESD protection solutions for mass-market electronics.
The TrEOS family-including PUSB3BB4Z-is engineered specifically for ultra-high-speed data line protection in consumer and computing applications where signal integrity and compact form factor are non-negotiable.
FAQ
What is the maximum operating temperature for PUSB3BB4Z?
The PUSB3BB4Z is rated for operation from −40 °C to +125 °C ambient temperature, with thermal performance validated under JEDEC JESD22-A104 temperature cycling and JESD22-A108 high-temperature operating life conditions. Its DFN2510A-10 package supports reflow soldering per IPC-J-STD-020, with peak profile up to 260 °C.
Can PUSB3BB4Z be used on 1.8 V I/O rails?
Yes-its ±3.3 V VRWM provides 1.5 V headroom above 1.8 V signaling, ensuring zero DC leakage and no false triggering during normal operation. The snap-back clamping threshold remains stable across process/voltage/temperature corners, verified per AEC-Q200 stress tests.
Does PUSB3BB4Z require external series impedance for optimal ESD performance?
No external series resistor is required. The device's intrinsic dynamic resistance and low clamping voltage enable direct placement between connector and PHY. Layout best practice mandates shortest possible trace length (<3 mm) and dedicated ground vias under pins 3 and 8 to minimize inductance.
How does PUSB3BB4Z compare to TVS diodes in surge handling?
PUSB3BB4Z delivers 8.3 A peak surge current (IEC 61000-4-5) with 5.4 V clamping-comparable to discrete TVS diodes-but achieves this in a 4-channel, 0.17 pF footprint. Unlike multi-kV TVS arrays, it avoids parasitic inductance penalties that degrade GHz-frequency response.
PUSB3BB4Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- 10-XFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Steering (Rail to Rail)
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 4
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- 5.4V
- Current - Peak Pulse (10/1000µs):
- 8.3A
- Power - Peak Pulse:
- -
- Power Line Protection:
- Yes
- Applications:
- HDMI, Telecom, USB
- Capacitance @ Frequency:
- 0.17pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN2510A-10
PUSB3BB4Z FAQ
1.How can I place an order for PUSB3BB4Z through Aetrix?
Please submit a Request for Quotation (RFQ) for PUSB3BB4Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PUSB3BB4Z reliable?
The price and inventory of PUSB3BB4Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PUSB3BB4Z is usually 5 days.
3.What payment methods are accepted for PUSB3BB4Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PUSB3BB4Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PUSB3BB4Z?
PUSB3BB4Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PUSB3BB4Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PUSB3BB4Z?
For technical support, including PUSB3BB4Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PUSB3BB4Z requirements.
6.How does Aetrix verify that PUSB3BB4Z is sourced from the original manufacturer or authorized distributors?
All PUSB3BB4Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PUSB3BB4Z meets industry standards.
7.What is the process for return or replacement of PUSB3BB4Z?
All PUSB3BB4Z units undergo pre-shipment inspection (PSI). If there is an issue with PUSB3BB4Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PUSB3BB4Z part is unused and in its original packaging.
Return procedure for PUSB3BB4Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PUSB3BB4Z Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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