Texas Instruments RF-HDT-WNMC-M0

Overview

RF-HDT-WNMC-M0 from Texas Instruments is a 13.56 MHz ISO/IEC 15693- and ISO/IEC 18000-3-compliant passive HF transponder IC designed for smart label inlays in RFID systems. It features 2 kbit EEPROM memory (64 blocks × 32 bits), factory-programmed 64-bit UID, dual-level block locking (user and factory), and supports ASK/FSK uplink modulation with 10%–100% downlink modulation index. It operates without integrated resonance capacitor and requires external antenna tuning - used in asset tagging, logistics tracking, and access control labels.

For engineers reviewing the RF-HDT-WNMC-M0 datasheet, RF-HDT-WNMC-M0 pinout, RF-HDT-WNMC-M0 application, or RF-HDT-WNMC-M0 equivalent, key selection criteria include its wafer-level bumping (Ni/Au), multi-wafer packing format, 1406 × 1226 μm die size, 100,000 write/erase cycles, and compliance with industrial RFID system timing, collision resolution, and data retention (10 years @ 55°C) requirements.

Technical Context

The RF-HDT-WNMC-M0 implements full-duplex communication per ISO/IEC 15693, supporting both single-subcarrier ASK and dual-subcarrier FSK uplink modes synchronized to reader interrogation. It resolves multiple-tag collisions via UID-based anticollision and accepts ISO-mandated and TI-extended commands including Write_2_Blocks and Lock_2_Blocks.

It uses non-volatile EEPROM for user memory with irreversible per-block locking (U/F bits), integrates no on-die resonance capacitor (relying on external LC tuning), and achieves operation at 2.5 V_ANT min with 50 μA supply current - enabling ultra-low-power passive tag operation across –40°C to +85°C ambient range.

Key Specifications

Pinout & Package

RF-HDT-WNMC-M0 is supplied as a bare die on 200 mm wafers with Ni/Au bumping, intended for flip-chip mounting onto etched aluminum antennas. Package form is unencapsulated wafer-level die; no leadframe or molded package is used.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HF transponder IC applications.

Compared with NXP ICODE SLI-S and STMicroelectronics ST25DV02K, RF-HDT-WNMC-M0 delivers optimized performance for high-speed, high-volume HF RFID inlays via its bump-enabled flip-chip integration, TI-extended command set, and dedicated ISO 15693 anticollision - making it ideal for industrial logistics where assembly speed and protocol efficiency outweigh dual-interface flexibility.

Availability

RF-HDT-WNMC-M0 is available at Aetrix Electronics and suitable for asset tagging, logistics tracking, and access control applications requiring stable component supply, wafer-level procurement, and long-lifecycle support for RFID inlay manufacturing.

Supply support for RF-HDT-WNMC-M0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and connectivity technologies, with decades of leadership in RFID and wireless identification solutions.

RF-HDT-WNMC-M0 belongs to TI's Tag-it HF-I Plus product line, engineered specifically for high-reliability, cost-optimized HF RFID inlays targeting industrial logistics, supply chain visibility, and secure physical access systems.

FAQ

What is the primary function of the RF-HDT-WNMC-M0 in an RFID system?

The RF-HDT-WNMC-M0 serves as a passive 13.56 MHz transponder IC that receives power and commands from an external reader via inductive coupling, stores and retrieves data in its 2 kbit EEPROM, and responds using ISO/IEC 15693-compliant ASK or FSK uplink modulation. Its role is to act as the data-bearing element in smart labels - enabling identification, tracking, and authentication without batteries or wired connections. RF-HDT-WNMC-M0 is designed exclusively for this transponder function in vicinity RFID systems.

Does the RF-HDT-WNMC-M0 include an integrated resonance capacitor?

No, the RF-HDT-WNMC-M0 does not include an integrated resonance capacitor. It relies solely on external LC circuit tuning - requiring careful design of the connected antenna (e.g., etched aluminum) with appropriate capacitance to achieve resonance at 13.56 MHz. This design choice allows maximum flexibility in inlay form factor and performance optimization but places responsibility for impedance matching (6.5–15.5 kΩ) and limiter clamping (10 V) on the antenna layout. RF-HDT-WNMC-M0's 2.4 pF input capacitance must be accounted for in total LC calculations.

How is memory protection implemented in the RF-HDT-WNMC-M0?

Memory protection in RF-HDT-WNMC-M0 uses two independent lock bits per 32-bit block: one for User Lock (U) and one for Factory Lock (F). Once set, either bit permanently prevents further writes to that block - U-lock is applied by the end user during programming, while F-lock is applied during wafer fabrication and secures configuration data like IC version and memory map. The Block Security Status byte (per ISO 15693-3) stores these states, and RF-HDT-WNMC-M0 enforces irreversible locking at the silicon level.

What packaging format is supplied for the RF-HDT-WNMC-M0?

RF-HDT-WNMC-M0 is supplied as unbonded, bumped die on 200 mm wafers - specifically in multi-wafer format (not singulated dies or pre-mounted inlays). Each wafer contains 16,422 complete dies, with Ni/Au bumps (25 μm ±10% height) and black ink-dot marking for failed dies. It is packed in antistatic moisture bags with silica gel inside wafer shipper boxes - intended for direct integration into HF RFID inlay manufacturing via flip-chip bonding onto antenna substrates.

Is the RF-HDT-WNMC-M0 suitable for use in harsh environmental conditions?

Yes, RF-HDT-WNMC-M0 is rated for operation from –40°C to +85°C and storage up to +125°C, with 10-year data retention at 55°C and 100,000 write/erase cycles - making it suitable for industrial logistics, outdoor asset tracking, and warehouse environments. Its HBM ESD rating (3.0 kV on ANT1/ANT2) also supports robustness during inlay assembly. However, as a bare die, final environmental resilience depends on encapsulation quality in the finished inlay - RF-HDT-WNMC-M0 itself provides the foundational reliability for such implementations.