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Renesas RKZ6.8Z4MFAKT#H1
- Part No.:
- RKZ6.8Z4MFAKT#H1
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- SOT-553
- Datasheet:
-
RKZ6.8Z4MFAKT#H1.pdf
- Description:
- TVS DIODE 3.5VWM 5VSON
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
RKZ6.8Z4MFAKT from Renesas Electronics is a silicon planar Zener diode array with four monolithic devices in a single VSON-5 package, designed for surge absorption and ESD protection on signal lines. It delivers 6.47–7.00 V zener voltage at 5 mA, 4.0 pF typical capacitance, 30 Ω dynamic resistance, and 8 kV ESD capability per IEC 61000-4-2 (150 pF/330 Ω), used in high-density USB, HDMI, and data-line interface protection.
For engineers reviewing the RKZ6.8Z4MFAKT datasheet, RKZ6.8Z4MFAKT pinout, RKZ6.8Z4MFAKT application, or RKZ6.8Z4MFAKT equivalent, key selection criteria include low-capacitance ESD clamping, multi-device integration in VSON-5, surge power handling up to 150 mW per device, and compatibility with automated SMT assembly for compact signal-path protection.
Technical Context
The RKZ6.8Z4MFAKT integrates four identical Zener diodes sharing a common anode (Pin 4) and individual cathodes (Pins 1, 2, 3, 5), enabling independent bidirectional clamping across four signal paths. Each device operates with a nominal 6.8 V breakdown, 2 µA max reverse leakage at 3.5 V, and 8 kV ESD robustness in both forward and reverse directions.
Its VSON-5 package supports high-density mounting with 0.5 mm pitch and 1.6 × 1.3 mm footprint. Thermal derating follows a linear 150 mW maximum at 25°C ambient, dropping to zero at 150°C junction temperature - consistent with its 150°C Tj rating and −55 to +150°C storage range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 6.47–7.00 V at IZ = 5 mA: Ensures precise clamping threshold for 5 V logic and USB 2.0 signal lines. |
| Capacitance (C) | 4.0 pF typ at 0 V, 1 MHz: Minimizes signal distortion on high-speed interfaces like HDMI and LVDS. |
| Dynamic Resistance (rd) | ≤30 Ω at IZ = 5 mA: Supports fast transient response and stable clamping voltage under surge conditions. |
| ESD Capability | 8 kV per IEC 61000-4-2 (150 pF/330 Ω): Meets industrial-grade ESD immunity requirements for exposed ports. |
| Power Dissipation (Pd) | 150 mW per device at Ta = 25°C: Enables reliable surge energy absorption without thermal runaway in compact layouts. |
| Reverse Leakage (IR) | ≤2 µA at VR = 3.5 V: Prevents DC loading on sensitive analog or digital receivers during normal operation. |
Pinout & Package
VSON-5 package: 1.6 mm × 1.3 mm × 0.6 mm body, 0.5 mm lead pitch, wettable flank terminals, RoHS-compliant matte tin plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Device 1) | Independent clamping path for Signal Line A; connects to protected trace before series impedance. |
| 2 | Cathode (Device 2) | Independent clamping path for Signal Line B; electrically isolated from other cathodes for multi-channel protection. |
| 3 | Cathode (Device 3) | Independent clamping path for Signal Line C; enables simultaneous protection of three differential or single-ended signals. |
| 4 | Anode (Common) | Shared reference node tied to ground or bias rail; defines clamping polarity and simplifies PCB routing. |
| 5 | Cathode (Device 4) | Independent clamping path for Signal Line D; completes four-channel ESD protection in one footprint. |
Key Features
| Feature | Design Value |
|---|---|
| Four-monolithic Zener array | Integrates four discrete clamping devices in one VSON-5 package, reducing board area by >70% vs. four SOD-323 diodes. |
| Low 4.0 pF capacitance | Preserves signal integrity on 480 Mbps USB 2.0 and 1.65 Gbps HDMI 1.4a channels without added jitter or rise-time degradation. |
| 8 kV bidirectional ESD rating | Meets IEC 61000-4-2 Level 4 for both contact and air discharge, eliminating need for external TVS staging in many consumer designs. |
| VSON-5 surface-mount package | Enables automated pick-and-place and reflow assembly with IPC Class 3 reliability; compatible with standard 0.5 mm pitch stencil apertures. |
| 150°C junction temperature rating | Supports operation in thermally constrained enclosures such as set-top boxes and industrial gateways without derating penalties below 105°C ambient. |
Applications
| USB 2.0 Port Protection | HDMI Interface Clamping |
|---|---|
Use Scenario: Protecting D+ and D− lines of a host-side USB 2.0 port against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Bidirectional Zener clamp limiting transient voltage to ≤7.0 V while maintaining <4.0 pF loading on 480 Mbps differential signaling. Use Value: Prevents PHY damage without degrading eye diagram margin or requiring additional series resistors or ferrites. |
Use Scenario: Safeguarding TMDS clock and data channels in a 1080p HDMI source device against cable-discharge events. IC Role / Device Role / Timing Role: Four-channel low-capacitance clamp using Pins 1–3 and 5 for three TMDS pairs plus clock, with shared anode to chassis ground. Use Value: Maintains signal bandwidth >200 MHz while meeting IEC 61000-4-2 Level 4 compliance across all five protected lines. |
| Industrial Sensor Interface | Automotive Infotainment Data Lines |
Use Scenario: Shielding RS-485 or CAN FD transceiver I/O pins in factory automation controllers exposed to relay-switching transients. IC Role / Device Role / Timing Role: Surge-absorbing Zener array clamping each signal line to ground, leveraging 150 mW per-device power rating for repetitive 10/1000 µs surges. Use Value: Extends system MTBF by suppressing >1 kV transients without latch-up or parametric shift after 1000+ ESD strikes. |
Use Scenario: Protecting MIPI D-PHY lanes between infotainment head unit and display module in vehicles operating at −40 to +105°C ambient. IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor placed directly at connector, rated for 8 kV contact discharge and qualified per AEC-Q200 stress tests. Use Value: Enables compliance with ISO 10605 (330 Ω/150 pF) while supporting 1.5 Gbps lane speeds and surviving automotive thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener-based ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E05U06DQAR | Quad-channel ESD array with 0.5 pF capacitance and 5.5 V working voltage; uses silicon-germanium process, not Zener-based. | Optimized for ultra-high-speed interfaces (>5 Gbps); lower clamping voltage but reduced surge power handling (12 W peak vs. RKZ6.8Z4MFAKT's 150 mW continuous). | Select when signal bandwidth >3 GHz is required and surge energy is limited to sub-microsecond transients. |
| SZ1.5SMC6.8AT3G | Single-channel 6.8 V Zener TVS in DO-214AB package; 600 W peak pulse power, 100 pF capacitance, no multi-channel integration. | Designed for bulk power-line surge suppression, not signal-line ESD; incompatible with high-density routing due to 7.0 × 6.2 mm footprint. | Select only for low-frequency, high-energy AC/DC rail protection where board space and capacitance are non-critical. |
Compared with TPD4E05U06DQAR and SZ1.5SMC6.8AT3G, the RKZ6.8Z4MFAKT uniquely balances four-channel integration, 4.0 pF capacitance, and 150 mW steady-state dissipation - making it optimal for space-constrained, multi-signal interfaces requiring repeatable ESD resilience without sacrificing speed.
Availability
RKZ6.8Z4MFAKT is available at Aetrix Electronics and suitable for USB 2.0 port protection, HDMI interface clamping, and industrial sensor interface applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for RKZ6.8Z4MFAKT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.
The RKZ6.8Z4MFAKT belongs to Renesas' legacy Zener diode protection portfolio, engineered specifically for high-density, low-capacitance ESD suppression in consumer and industrial signal-path applications.
FAQ
What is the exact Zener voltage tolerance of RKZ6.8Z4MFAKT at 5 mA test current?
The RKZ6.8Z4MFAKT has a specified Zener voltage range of 6.47 V minimum to 7.00 V maximum at IZ = 5 mA, measured with a 40 ms pulse. This 530 mV window reflects process-controlled tight tolerance for consistent clamping behavior across production lots. The RKZ6.8Z4MFAKT maintains this specification across its full operating temperature range of −55°C to +150°C junction temperature.
How is the anode connection configured across the four Zener devices in RKZ6.8Z4MFAKT?
The RKZ6.8Z4MFAKT features a single common anode terminal (Pin 4) shared by all four monolithic Zener diodes, with individual cathodes on Pins 1, 2, 3, and 5. This architecture allows simultaneous bidirectional clamping of four independent signal lines to the same reference potential - typically ground - while minimizing inter-channel coupling and PCB routing complexity.
Does RKZ6.8Z4MFAKT meet IEC 61000-4-2 ESD immunity standards, and what test conditions apply?
Yes, the RKZ6.8Z4MFAKT is rated for 8 kV contact discharge and 8 kV air discharge per IEC 61000-4-2, tested with a 150 pF capacitor and 330 Ω series resistor, applying 10 pulses in both forward and reverse bias directions. Failure is defined as reverse leakage exceeding 2 µA at 3.5 V after testing - a pass/fail criterion explicitly stated in the RKZ6.8Z4MFAKT datasheet.
Can RKZ6.8Z4MFAKT be used in automotive applications, and what qualification does it hold?
The RKZ6.8Z4MFAKT is classified as a Standard-grade Renesas product, intended for consumer and industrial applications including computing, office equipment, and communications systems. It is not AEC-Q200 qualified and lacks automotive-specific stress testing; therefore, RKZ6.8Z4MFAKT should not be deployed in safety-critical or engine-compartment automotive functions without additional validation and manufacturer approval.
What is the thermal derating behavior of RKZ6.8Z4MFAKT above 25°C ambient temperature?
The RKZ6.8Z4MFAKT exhibits linear thermal derating: its maximum allowable power dissipation decreases from 150 mW at 25°C ambient to zero at 150°C junction temperature. The derating slope is −1.25 mW/°C, calculated from the 150 mW / (150°C − 25°C) ratio. This behavior is documented in Figure 2 of the RKZ6.8Z4MFAKT datasheet and applies per individual Zener device within the array.
RKZ6.8Z4MFAKT#H1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- SOT-553
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.5V
- Voltage - Breakdown (Min):
- 6.47V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 4pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-VSON
RKZ6.8Z4MFAKT#H1 FAQ
1.How can I place an order for RKZ6.8Z4MFAKT#H1 through Aetrix?
Please submit a Request for Quotation (RFQ) for RKZ6.8Z4MFAKT#H1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RKZ6.8Z4MFAKT#H1 reliable?
The price and inventory of RKZ6.8Z4MFAKT#H1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RKZ6.8Z4MFAKT#H1 is usually 5 days.
3.What payment methods are accepted for RKZ6.8Z4MFAKT#H1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RKZ6.8Z4MFAKT#H1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RKZ6.8Z4MFAKT#H1?
RKZ6.8Z4MFAKT#H1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RKZ6.8Z4MFAKT#H1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RKZ6.8Z4MFAKT#H1?
For technical support, including RKZ6.8Z4MFAKT#H1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RKZ6.8Z4MFAKT#H1 requirements.
6.How does Aetrix verify that RKZ6.8Z4MFAKT#H1 is sourced from the original manufacturer or authorized distributors?
All RKZ6.8Z4MFAKT#H1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RKZ6.8Z4MFAKT#H1 meets industry standards.
7.What is the process for return or replacement of RKZ6.8Z4MFAKT#H1?
All RKZ6.8Z4MFAKT#H1 units undergo pre-shipment inspection (PSI). If there is an issue with RKZ6.8Z4MFAKT#H1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RKZ6.8Z4MFAKT#H1 part is unused and in its original packaging.
Return procedure for RKZ6.8Z4MFAKT#H1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RKZ6.8Z4MFAKT#H1 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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