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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1002R-T1-GE3

Name: SI1002R-T1-GE3
Brand: Vishay Siliconix
SKU: SI1002R-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1002R-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-75A

Datasheet:: SI1002R-T1-GE3.pdf

Description:: MOSFET N-CH 30V 610MA SC75A

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI1002R-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in SC-75A package, rated for 0.61 A continuous drain current at 25 °C, with R_DS(on) = 0.450 Ω (typ.) at V_GS = 4.5 V and 0.647 Ω (typ.) at V_GS = 1.5 V, designed for low-voltage load switching in space-constrained mobile computing devices.

For engineers reviewing the SI1002R-T1-GE3 datasheet, SI1002R-T1-GE3 pinout, SI1002R-T1-GE3 application, or SI1002R-T1-GE3 equivalent, this device's gate-source ESD rating (1000 V), ultra-low gate charge (0.72 nC typ. at 4.5 V), and 1.5 V logic-level drive capability are critical selection criteria for battery-powered DC/DC converter and smartphone power management designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its 1.5 V threshold voltage enables direct interface with modern low-voltage microcontrollers and PMICs without level shifting.

The device integrates a body diode with 0.8–1.2 V forward voltage at 0.5 A and 8–15 ns reverse recovery time, supporting synchronous rectification and bidirectional current paths in compact boost converters and load switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	30 V - supports input rails up to 24 V in portable DC/DC stages without derating
R_DS(on) @ 4.5 V	0.450 Ω (typ.) - delivers <0.1 W conduction loss at 0.5 A, critical for thermal budget in sealed tablets
Q_g @ 4.5 V	0.72 nC (typ.) - enables >1 MHz switching with minimal driver power consumption
V_GS(th)	0.4–1.0 V - ensures reliable turn-on with 1.5 V logic, reducing system-level voltage translation complexity
T_J Range	−55 to +150 °C - qualified for operation inside battery compartments and near RF modules
R_thJA (steady)	675 °C/W - requires PCB copper area per Application Note 826 for sustained 0.49 A at 70 °C ambient
I_D Continuous	0.61 A @ 25 °C - defines maximum steady-state load current before thermal shutdown in unheatsinked SC-75A layout

Pinout & Package

SC-75A surface-mount package (1.575 mm × 1.60 mm × 0.70 mm), optimized for high-density mobile PCBs with minimal thermal mass and no exposed pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 0–4.5 V logic; 1000 V HBM ESD protected for direct connection to SoC GPIO
2 (S)	Source	Reference node for gate drive and current return path; tied to ground plane in load-switch configuration
3 (D)	Drain	High-side or low-side power path terminal; connects to battery rail or output node of DC/DC stage

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest R_DS(on) per mm² among 30 V SC-75A MOSFETs, enabling smaller footprint than planar alternatives
100 % R_g tested	Ensures gate resistance between 2.4–24.4 Ω, guaranteeing consistent switching speed and EMI profile across production lots
1.5 V logic-level drive	Eliminates need for external gate drivers when interfaced with ARM Cortex-M0+ or Qualcomm PMIC outputs
Body diode t_rr = 8 ns (typ.)	Reduces shoot-through risk and conduction loss during dead-time in synchronous buck topologies
Pb-free & halogen-free	Meets IPC-J-STD-609 Class 1 and RoHS 2011/65/EU Annex II, suitable for consumer tablet final assembly

Applications

Smartphone Load Switch	Tablet PC Boost Converter
Use Scenario: Powering camera module only during active capture to extend battery life. IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V rail to image sensor subsystem. Use Value: 0.450 Ω R_DS(on) limits dropout to <0.25 V at 0.5 A, preserving sensor supply regulation while minimizing heat in 1.6 mm × 1.6 mm area.	Use Scenario: Step-up conversion from single-cell Li-ion (2.8–4.2 V) to 5 V USB OTG port. IC Role / Device Role / Timing Role: Synchronous rectifier in 1.5 MHz boost stage. Use Value: 8 ns body diode t_rr and 0.72 nC Q_g enable >92 % efficiency at 1 A output with minimal gate drive loss.
Mobile SSD Power Gate	Wearable DC/DC Enable Control
Use Scenario: Isolating NVMe controller power domain during sleep mode to reduce standby leakage. IC Role / Device Role / Timing Role: High-side power switch controlled by baseband processor GPIO. Use Value: 0.61 A I_D rating and −55 to +150 °C T_J range support hot-plug reliability and thermal cycling in thin-profile storage modules.	Use Scenario: Enabling/disabling 3.3 V LDO output for Bluetooth LE radio based on connection state. IC Role / Device Role / Timing Role: Logic-level-controlled pass element in always-on power management IC. Use Value: V_GS(th) as low as 0.4 V ensures turn-on margin even with aged battery voltage (2.8 V), preventing brownout-induced disconnect.

Smartphone Load Switch

Tablet PC Boost Converter

Use Scenario: Powering camera module only during active capture to extend battery life.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V rail to image sensor subsystem.

Use Value: 0.450 Ω R_DS(on) limits dropout to <0.25 V at 0.5 A, preserving sensor supply regulation while minimizing heat in 1.6 mm × 1.6 mm area.

Use Scenario: Step-up conversion from single-cell Li-ion (2.8–4.2 V) to 5 V USB OTG port.

IC Role / Device Role / Timing Role: Synchronous rectifier in 1.5 MHz boost stage.

Use Value: 8 ns body diode t_rr and 0.72 nC Q_g enable >92 % efficiency at 1 A output with minimal gate drive loss.

Mobile SSD Power Gate

Wearable DC/DC Enable Control

Use Scenario: Isolating NVMe controller power domain during sleep mode to reduce standby leakage.

IC Role / Device Role / Timing Role: High-side power switch controlled by baseband processor GPIO.

Use Value: 0.61 A I_D rating and −55 to +150 °C T_J range support hot-plug reliability and thermal cycling in thin-profile storage modules.

Use Scenario: Enabling/disabling 3.3 V LDO output for Bluetooth LE radio based on connection state.

IC Role / Device Role / Timing Role: Logic-level-controlled pass element in always-on power management IC.

Use Value: V_GS(th) as low as 0.4 V ensures turn-on margin even with aged battery voltage (2.8 V), preventing brownout-induced disconnect.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H400L-7	R_DS(on) = 0.35 Ω @ 4.5 V (lower), but V_GS(th) = 0.5–1.2 V (wider spread); SC-70 package	Higher current capability (0.8 A), but larger footprint (2.0 mm × 2.1 mm) and less consistent turn-on at 1.5 V	Select when higher I_D and lower R_DS(on) outweigh board space constraints and tighter V_GS(th) tolerance needs.
AO3414	R_DS(on) = 0.052 Ω @ 4.5 V (much lower), but V_GS(th) = 0.7–1.4 V; SOT-23 package	Higher power handling (4.2 A), but requires ≥2.5 V logic for guaranteed turn-on and occupies 2.9 mm × 1.6 mm area	Select for high-current DC/DC stages where gate drive voltage ≥2.5 V is available and thermal design accommodates higher PD.

Compared with DMN10H400L-7 and AO3414, SI1002R-T1-GE3 uniquely balances ultra-compact SC-75A size, guaranteed 1.5 V operation, and sub-0.5 Ω R_DS(on), making it optimal for space- and voltage-constrained mobile subsystems where gate drive headroom is limited.

Availability

SI1002R-T1-GE3 is available at Aetrix Electronics and suitable for smartphone load switching, tablet PC boost converters, mobile SSD power gating, and wearable DC/DC enable control requiring stable component supply across high-mix consumer electronics production.

Supply support for SI1002R-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si1002R product line targets ultra-compact, low-voltage power switching in mobile and portable electronics, emphasizing logic-level drive compatibility, minimal gate charge, and robust thermal performance in sub-2 mm² packages.

FAQ

What is the maximum continuous drain current for SI1002R-T1-GE3 at 70 °C ambient temperature?

The SI1002R-T1-GE3 supports 0.49 A continuous drain current at 70 °C ambient temperature, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with derating applied per thermal resistance data. This value assumes standard FR4 PCB mounting per the datasheet's test condition (1" × 1" board). Exceeding this current without additional copper area or airflow risks junction temperature exceeding 150 °C.

Does SI1002R-T1-GE3 require a gate resistor for typical 1.8 V GPIO drive?

No external gate resistor is required for basic on/off control using a 1.8 V GPIO driving SI1002R-T1-GE3, as its V_GS(th) minimum is 0.4 V and typical gate charge is only 0.72 nC. However, a small series resistor (10–47 Ω) is recommended in high-speed switching applications (>500 kHz) to dampen ringing and reduce EMI, especially when routing gate traces over longer distances on dense PCBs.

Can SI1002R-T1-GE3 be used in a high-side load switch configuration?

Yes, SI1002R-T1-GE3 can be configured as a high-side load switch, but requires a gate drive voltage ≥ V_IN + V_GS(th) (i.e., >3.3 V for a 3.0 V rail) to ensure full enhancement. Since it is an N-channel device, a charge pump or dedicated high-side driver IC is needed-unlike P-channel alternatives. Its low Q_g and R_DS(on) make it viable where board space allows the auxiliary drive circuitry.

What is the body diode forward voltage of SI1002R-T1-GE3 at 0.5 A and 25 °C?

The body diode forward voltage (V_SD) of SI1002R-T1-GE3 is 0.8–1.2 V at 0.5 A and 25 °C, as specified in the "Drain-Source Body Diode Characteristics" section. This parameter is critical for evaluating conduction loss during reverse current flow in boost or flyback configurations, and the relatively tight range reflects consistent process control across production lots.

Is SI1002R-T1-GE3 compliant with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements?

Yes, SI1002R-T1-GE3 is rated MSL-1 per JEDEC J-STD-020, meaning it has unlimited floor life at ≤30 °C/85 % RH and does not require dry pack or baking prior to reflow soldering. This is confirmed by Vishay's packaging documentation for SC-75A devices and aligns with its Pb-free, halogen-free construction per J-STD-609 Class 1.

SI1002R-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SC-75A

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 610mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 560mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 2 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 36 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 220mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75A

SI1002R-T1-GE3 FAQ

1.How can I place an order for SI1002R-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1002R-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1002R-T1-GE3 reliable?

The price and inventory of SI1002R-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1002R-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1002R-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1002R-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1002R-T1-GE3?

SI1002R-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1002R-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1002R-T1-GE3?

For technical support, including SI1002R-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1002R-T1-GE3 requirements.

6.How does Aetrix verify that SI1002R-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1002R-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1002R-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1002R-T1-GE3?

All SI1002R-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1002R-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1002R-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1002R-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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