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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1011X-T1-GE3

Name: SI1011X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1011X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1011X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-89, SOT-490

Datasheet:: SI1011X-T1-GE3.pdf

Description:: MOSFET P-CH 12V SC89-3

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Product details

Overview

SI1011X-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -12 V drain-source voltage, with R_DS(on) of 0.640 Ω at V_GS = -4.5 V and continuous drain current of -0.48 A at T_A = 25 °C. It serves as a low-voltage load switch in portable power rails such as 1.2 V systems.

For engineers reviewing the SI1011X-T1-GE3 datasheet, SI1011X-T1-GE3 pinout, SI1011X-T1-GE3 application, or SI1011X-T1-GE3 equivalent, key selection criteria include gate threshold voltage (-0.35 to -0.8 V), ultra-low gate charge (1.15 nC at V_GS = -2.5 V), thermal resistance (530 °C/W max), SC-89 package compatibility, and ESD robustness (700 V HBM).

Technical Context

This device operates as a single P-channel MOSFET with enhancement-mode behavior, requiring negative gate drive relative to source. Its low V_GS(th) enables direct control from 1.2–1.8 V logic outputs without level shifting.

Designed for high-efficiency, space-constrained load switching, it features fast switching (t_d(on) = 4–8 ns, t_f = 9–18 ns) and integrates a body diode with V_SD = -0.8 to -1.2 V at I_S = -0.3 A and t_rr = 12–20 ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum reverse-blocking capability for low-voltage rail protection
R_DS(on) @ V_GS = -4.5 V	0.640 Ω - Enables <100 mW conduction loss at 0.4 A load current
I_D (continuous, T_A = 25 °C)	-0.48 A - Supports compact battery-powered load switching up to ~600 mW
Q_g @ V_GS = -2.5 V	1.15 nC - Minimizes gate drive power and enables efficient low-voltage PWM control
V_GS(th)	-0.35 to -0.8 V - Ensures reliable turn-on with 1.2 V or higher logic-level gate signals
T_J range	-55 to +150 °C - Qualified for operation in portable electronics under thermal stress
R_thJA (max, steady state)	650 °C/W - Requires minimal PCB copper area for thermal management in SC-89 footprint

Pinout & Package

SC-89 (3-lead) surface-mount package: small outline, lead-free and halogen-free per ordering code -T1-GE3. Dimensions: 1.50–1.70 mm length × 0.75–0.95 mm width × 0.60–0.80 mm height; pitch = 1.00 mm (e), lead spacing = 0.50 mm (e1).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (S)	Reference node for gate drive; connects to positive rail in high-side load switch configuration
2 (Drain)	Drain terminal (D)	Switched output node; connects to load; carries full load current and body diode reverse recovery stress
3 (Gate)	Gate terminal (G)	Control input; requires negative voltage relative to source to turn on; low Q_g eases driving from low-power logic

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers lower R_DS(on) and gate charge vs. planar MOSFETs in same SC-89 footprint
700 V HBM ESD rating	Reduces need for external ESD protection in handheld assembly lines and end-user handling
Low V_GS(th) distribution	Ensures consistent turn-on across production lots when driven by 1.2–1.8 V GPIOs
Fast switching with low C_iss/C_oss	62 pF input capacitance and 26 pF output capacitance minimize dynamic losses in high-frequency load control
Body diode with t_rr = 12–20 ns	Supports synchronous rectification or flyback paths in DC-DC converters without external diode

Applications

Smartphone Power Rail Switching	Tablet PC Core Voltage Sequencing
Use Scenario: Enabling/disabling 1.2 V core supply to application processor during sleep/wake transitions. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with sub-millisecond response. Use Value: Achieves <5 µA off-state leakage and <100 mW conduction loss at 0.4 A, extending battery life.	Use Scenario: Isolating auxiliary 1.8 V I/O domain from main SoC during suspend mode. IC Role / Device Role / Timing Role: P-channel MOSFET used in high-side configuration with gate driven by dedicated enable signal. Use Value: Leverages -0.35 V min V_GS(th) to ensure full enhancement with 1.8 V logic, eliminating level shifter.
Wearable Sensor Subsystem Enable	USB OTG VBUS Control
Use Scenario: Power gating MEMS sensor cluster (accelerometer, gyroscope) in fitness tracker. IC Role / Device Role / Timing Role: Load switch placed between battery and sensor LDO input; controlled by microcontroller GPIO. Use Value: 1.15 nC Q_g allows clean switching at 10 kHz PWM without gate driver IC.	Use Scenario: Controlling VBUS connection in dual-role USB devices to prevent backfeed during host/peripheral role swap. IC Role / Device Role / Timing Role: Reverse-polarity protection switch in VBUS path; body diode blocks reverse current flow. Use Value: Integrated body diode with -0.8 V V_SD provides bidirectional blocking without discrete diode.

Smartphone Power Rail Switching

Tablet PC Core Voltage Sequencing

Use Scenario: Enabling/disabling 1.2 V core supply to application processor during sleep/wake transitions.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with sub-millisecond response.

Use Value: Achieves <5 µA off-state leakage and <100 mW conduction loss at 0.4 A, extending battery life.

Use Scenario: Isolating auxiliary 1.8 V I/O domain from main SoC during suspend mode.

IC Role / Device Role / Timing Role: P-channel MOSFET used in high-side configuration with gate driven by dedicated enable signal.

Use Value: Leverages -0.35 V min V_GS(th) to ensure full enhancement with 1.8 V logic, eliminating level shifter.

Wearable Sensor Subsystem Enable

USB OTG VBUS Control

Use Scenario: Power gating MEMS sensor cluster (accelerometer, gyroscope) in fitness tracker.

IC Role / Device Role / Timing Role: Load switch placed between battery and sensor LDO input; controlled by microcontroller GPIO.

Use Value: 1.15 nC Q_g allows clean switching at 10 kHz PWM without gate driver IC.

Use Scenario: Controlling VBUS connection in dual-role USB devices to prevent backfeed during host/peripheral role swap.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch in VBUS path; body diode blocks reverse current flow.

Use Value: Integrated body diode with -0.8 V V_SD provides bidirectional blocking without discrete diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1021X-T1-GE3	Same SC-89 package, but -20 V V_DS, higher R_DS(on) (1.2 Ω @ -4.5 V), lower I_D (-0.28 A)	Better suited for 3.3 V rail switching where higher breakdown margin is needed	Select if system requires >15 V transient immunity and can accept higher conduction loss
DMN2020LFG-7	20 V V_DS, 0.47 Ω R_DS(on) @ -4.5 V, SOT-723 package (smaller footprint, same pinout)	Higher voltage rating and slightly lower R_DS(on), but different thermal profile due to smaller pad area	Prefer when board space is critical and thermal derating allows use of SOT-723 layout

Compared with SI1011X-T1-GE3, Si1021X-T1-GE3 trades voltage headroom for reduced current capability, while DMN2020LFG-7 offers tighter R_DS(on) in a smaller package but demands stricter thermal layout validation.

Availability

SI1011X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power rail switching, tablet PC core voltage sequencing, and wearable sensor subsystem enable requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI1011X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding electronic systems.

The Si1011X series is part of Vishay's ultra-low-voltage P-channel TrenchFET® portfolio, engineered specifically for load switching in battery-powered portable electronics operating below 2 V logic thresholds.

FAQ

What is the maximum continuous drain current for SI1011X-T1-GE3 at 70 °C ambient temperature?

The SI1011X-T1-GE3 supports -0.38 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package with 540–650 °C/W junction-to-ambient resistance under steady-state conditions.

Can SI1011X-T1-GE3 be used with a 1.2 V GPIO for gate drive?

Yes - SI1011X-T1-GE3 has a guaranteed V_GS(th) range of -0.35 V to -0.8 V, meaning it fully enhances with a 1.2 V gate-to-source differential (i.e., gate at 0 V, source at 1.2 V). This eliminates need for external level shifters in 1.2 V logic domains.

What is the typical total gate charge of SI1011X-T1-GE3 at V_GS = -2.5 V?

The SI1011X-T1-GE3 has a typical total gate charge (Q_g) of 1.15 nC when driven at V_GS = -2.5 V, as measured under V_DS = -6 V, I_D = -0.4 A conditions. This low value enables efficient switching with minimal gate driver power consumption.

Does SI1011X-T1-GE3 include integrated ESD protection?

Yes - SI1011X-T1-GE3 features typical human-body-model (HBM) ESD protection of 700 V, as stated in the Features section. This level is sufficient for standard handling in portable electronics manufacturing without requiring additional external ESD clamps.

What is the thermal resistance (R_thJA) of SI1011X-T1-GE3 under steady-state conditions?

The maximum steady-state junction-to-ambient thermal resistance (R_thJA) for SI1011X-T1-GE3 is 650 °C/W, measured on a 1" × 1" FR4 board. The typical value is 540 °C/W, guiding thermal design for power dissipation up to 0.19 W at 25 °C ambient.

SI1011X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-89, SOT-490

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 480mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 4.5V

Rds On (Max) @ Id, Vgs:: 640mOhm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 4.5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 62 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 190mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89-3

SI1011X-T1-GE3 FAQ

1.How can I place an order for SI1011X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1011X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1011X-T1-GE3 reliable?

The price and inventory of SI1011X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1011X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1011X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1011X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1011X-T1-GE3?

SI1011X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1011X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1011X-T1-GE3?

For technical support, including SI1011X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1011X-T1-GE3 requirements.

6.How does Aetrix verify that SI1011X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1011X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1011X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1011X-T1-GE3?

All SI1011X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1011X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1011X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1011X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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