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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1012R-T1-E3

Name: SI1012R-T1-E3
Brand: Vishay Siliconix
SKU: SI1012R-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1012R-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: SI1012R-T1-E3.pdf

Description:: MOSFET N-CH 20V 500MA SC75A

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Product details

Overview

SI1012R-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 1.8 V gate drive, with 20 V drain-source voltage, 0.7 Ω R_DS(on) at V_GS = 4.5 V, and 600 mA continuous drain current - designed for high-side load switching in space-constrained battery-powered systems.

For engineers reviewing the SI1012R-T1-E3 datasheet, SI1012R-T1-E3 pinout, SI1012R-T1-E3 application, or SI1012R-T1-E3 equivalent, key selection criteria include low-threshold operation (0.8 V typ.), ESD-hardened gate (2000 V HBM), fast switching (10 ns turn-on delay), and SC-75A package compatibility with ultra-low-power portable designs.

Technical Context

This device employs trench-gate silicon technology optimized for low-voltage logic-level drive, enabling direct interface with 1.8 V and 2.5 V microcontroller GPIOs without level-shifting. Its 0.41 Ω typical R_DS(on) at 4.5 V and 700 mA on-state current support efficient power delivery in compact DC-DC converter stages.

The MOSFET features integrated body diode with 0.8–1.2 V forward voltage at 150 mA, and exhibits stable threshold voltage (0.45–0.9 V) across -55 °C to 125 °C, supporting reliable operation in thermally variable portable environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports input rails up to 18 V in battery-powered converters and load switches.
R_DS(on)	0.70 Ω at V_GS = 4.5 V - limits conduction loss to <2 mW at 600 mA, critical for thermal management in SC-75A.
V_GS(th)	0.9 V (typ.) - ensures full enhancement with 1.8 V logic outputs, eliminating need for gate drivers.
t_d(on)	5 ns - enables high-frequency PWM control (≥10 MHz) in compact LED or solenoid drivers.
ESD Rating	2000 V HBM - protects against handling damage during SMT assembly of wearable and handheld PCBs.
P_D (SC-75A)	150 mW steady-state - defines maximum continuous power dissipation on FR4 board without heatsinking.

Pinout & Package

SI1012R-T1-E3 is housed in the SC-75A (SOT-416) surface-mount package - a 3-lead, single-ended leadframe package measuring 1.575 mm × 1.60 mm × 0.80 mm, optimized for high-density portable layouts and compatible with standard 0.5 mm pitch reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Logic-level control input; accepts 1.8 V–4.5 V drive; ESD-protected to 2000 V HBM.
2 (S)	Source	Power return node; connects to system ground or low-side reference; forms body diode anode.
3 (D)	Drain	High-side switched output; carries load current up to 600 mA; connects to V_IN or supply rail.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.7 Ω R_DS(on) at 4.5 V in SC-75A - 30 % lower on-resistance than planar MOSFETs in same footprint.
1.8 V gate rating	Guarantees turn-on with 1.8 V I/Os (e.g., ARM Cortex-M0+), removing level-shifters in ultra-low-power MCU interfaces.
Fast 10 ns switching	Reduces transition losses in 1–5 MHz DC-DC controllers, improving efficiency in buck regulators under light loads.
Low 0.8 V threshold (typ.)	Ensures robust conduction margin at cold temperature (-40 °C), preventing dropout in battery-powered medical sensors.

Applications

Relay/Solenoid Driver	Cell Phone Load Switch
Use Scenario: Driving 12 V/100 mA relay coils in IoT gateway modules powered by single-cell Li-ion batteries. IC Role / Device Role / Timing Role: High-side switch controlling coil energization; operates as discrete power path controller. Use Value: Low 0.8 V V_GS(th) ensures reliable pull-in even at 3.0 V battery voltage; 0.7 Ω R_DS(on) minimizes hold power to <10 mW.	Use Scenario: Enabling/disabling camera flash LED power rail in smartphone mainboard during burst capture mode. IC Role / Device Role / Timing Role: Load switch isolating flash circuitry; activated via baseband processor GPIO. Use Value: 5 ns t_d(on) supports precise 10 µs pulse timing; SC-75A footprint saves >0.5 mm² vs. SOT-23 in tight camera module zones.
Low-Voltage Display Backlight	Memory Power Sequencing
Use Scenario: Controlling white LED backlight for OLED display in smartwatch, powered from regulated 3.3 V rail. IC Role / Device Role / Timing Role: Constant-current source switch; modulated via PWM at 20 kHz to avoid audible noise. Use Value: Fast 10 ns switching eliminates PWM distortion; 2000 V HBM ESD protection prevents field failures during end-user handling.	Use Scenario: Sequencing power to LPDDR4 memory banks during SoC boot in automotive infotainment head units. IC Role / Device Role / Timing Role: Controlled power ramp generator; triggered by PMIC enable signal with <100 ns jitter tolerance. Use Value: Stable V_GS(th) over -40 °C to 105 °C ensures deterministic turn-on timing; 0.41 Ω typical R_DS(on) limits voltage droop to <0.25 V at 500 mA.

Relay/Solenoid Driver

Cell Phone Load Switch

Use Scenario: Driving 12 V/100 mA relay coils in IoT gateway modules powered by single-cell Li-ion batteries.

IC Role / Device Role / Timing Role: High-side switch controlling coil energization; operates as discrete power path controller.

Use Value: Low 0.8 V V_GS(th) ensures reliable pull-in even at 3.0 V battery voltage; 0.7 Ω R_DS(on) minimizes hold power to <10 mW.

Use Scenario: Enabling/disabling camera flash LED power rail in smartphone mainboard during burst capture mode.

IC Role / Device Role / Timing Role: Load switch isolating flash circuitry; activated via baseband processor GPIO.

Use Value: 5 ns t_d(on) supports precise 10 µs pulse timing; SC-75A footprint saves >0.5 mm² vs. SOT-23 in tight camera module zones.

Low-Voltage Display Backlight

Memory Power Sequencing

Use Scenario: Controlling white LED backlight for OLED display in smartwatch, powered from regulated 3.3 V rail.

IC Role / Device Role / Timing Role: Constant-current source switch; modulated via PWM at 20 kHz to avoid audible noise.

Use Value: Fast 10 ns switching eliminates PWM distortion; 2000 V HBM ESD protection prevents field failures during end-user handling.

Use Scenario: Sequencing power to LPDDR4 memory banks during SoC boot in automotive infotainment head units.

IC Role / Device Role / Timing Role: Controlled power ramp generator; triggered by PMIC enable signal with <100 ns jitter tolerance.

Use Value: Stable V_GS(th) over -40 °C to 105 °C ensures deterministic turn-on timing; 0.41 Ω typical R_DS(on) limits voltage droop to <0.25 V at 500 mA.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN1019USN-7	20 V V_DS, 0.55 Ω R_DS(on) at 4.5 V, SC-70 package (smaller footprint but lower PD: 120 mW)	Better on-resistance but reduced thermal margin; unsuitable for 600 mA continuous loads at 85 °C ambient	Select when board area is constrained and peak current ≤400 mA; verify thermal derating per layout.
AO3400A	30 V V_DS, 0.042 Ω R_DS(on) at 10 V, SOT-23 package (larger, higher PD: 1.4 W)	Requires 2.5 V minimum gate drive; not logic-compatible with 1.8 V MCUs without level shift	Choose for higher-voltage rails (>20 V) or higher-current loads (>1 A); avoid in 1.8 V GPIO-driven designs.

Compared with DMN1019USN-7 and AO3400A, SI1012R-T1-E3 uniquely balances 1.8 V logic compatibility, SC-75A miniaturization, and 600 mA capability - making it optimal for space-limited, single-cell battery systems where gate drive voltage and thermal envelope are co-constrained.

Availability

SI1012R-T1-E3 is available at Aetrix Electronics and suitable for battery-operated systems, portable display power management, and low-voltage load switching applications requiring stable component supply and long-term industrial availability.

Supply support for SI1012R-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The Si1012R belongs to Vishay's TrenchFET® logic-level MOSFET family, engineered specifically for ultra-low-voltage switching in portable, wearables, and energy-harvesting systems where gate drive voltage and board area are critical constraints.

FAQ

What is the maximum continuous drain current for SI1012R-T1-E3 at 85 °C ambient?

The SI1012R-T1-E3 supports 400 mA continuous drain current at TA = 85 °C when mounted on FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-75A package, and actual current capability depends on PCB copper area and airflow. The SI1012R-T1-E3 must be operated within this limit to ensure junction temperature remains below 150 °C.

Is SI1012R-T1-E3 suitable for high-side switching with 1.8 V microcontroller GPIOs?

Yes - the SI1012R-T1-E3 has a typical gate threshold voltage of 0.8 V and guaranteed turn-on at V_GS ≥ 1.8 V, making it fully compatible with 1.8 V logic outputs without external level shifting. Its low 0.7 Ω R_DS(on) at 4.5 V and stable V_GS(th) across temperature ensure robust high-side switching performance in the SI1012R-T1-E3.

Does SI1012R-T1-E3 include integrated ESD protection on the gate terminal?

Yes - the SI1012R-T1-E3 features built-in gate-source ESD protection rated at 2000 V per Human Body Model (HBM), as confirmed in the Features section and Absolute Maximum Ratings. This protection is process-integrated and does not require external TVS devices for standard handling and assembly, enhancing reliability in SI1012R-T1-E3-based consumer electronics.

What is the typical total gate charge (Qg) of SI1012R-T1-E3 and how does it impact switching loss?

The SI1012R-T1-E3 has a typical total gate charge of 750 pC at V_DS = 10 V and V_GS = 4.5 V. This value directly determines driver strength requirements and switching energy loss: at 1 MHz PWM, Qg contributes ~0.75 µW of dynamic gate loss per cycle. The SI1012R-T1-E3's moderate Qg enables efficient drive from low-current GPIOs while maintaining fast 5 ns turn-on delay.

Can SI1012R-T1-E3 be used in reverse conduction mode (source-to-drain current)?

Yes - the SI1012R-T1-E3 contains an intrinsic body diode with typical forward voltage of 0.8–1.2 V at 150 mA, allowing controlled reverse current flow from source to drain. However, its 275 mA continuous source current rating is lower than drain current, and reverse recovery is not characterized; the SI1012R-T1-E3 should only be used in reverse conduction where diode behavior is intentionally leveraged and current stays within IS limits.

SI1012R-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.75 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 150mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75A

SI1012R-T1-E3 FAQ

1.How can I place an order for SI1012R-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1012R-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1012R-T1-E3 reliable?

The price and inventory of SI1012R-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1012R-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1012R-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1012R-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1012R-T1-E3?

SI1012R-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1012R-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1012R-T1-E3?

For technical support, including SI1012R-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1012R-T1-E3 requirements.

6.How does Aetrix verify that SI1012R-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1012R-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1012R-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1012R-T1-E3?

All SI1012R-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1012R-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1012R-T1-E3 part is unused and in its original packaging.

Return procedure for SI1012R-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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