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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1012R-T1-GE3

Name: SI1012R-T1-GE3
Brand: Vishay Siliconix
SKU: SI1012R-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1012R-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: SI1012R-T1-GE3.pdf

Description:: MOSFET N-CH 20V 500MA SC75A

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Product details

Overview

SI1012R-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 1.8 V gate drive, optimized for high-side switching in low-voltage battery-operated systems. It delivers R_DS(on) = 0.70 Ω at V_GS = 4.5 V, 0.85 Ω at 2.5 V, and 1.25 Ω at 1.8 V, with a typical gate threshold voltage of 0.9 V and ESD rating of 2000 V HBM - enabling reliable operation in portable display backlight drivers and solenoid control circuits.

For engineers reviewing the SI1012R-T1-GE3 datasheet, SI1012R-T1-GE3 pinout, SI1012R-T1-GE3 application, or SI1012R-T1-GE3 equivalent, key selection criteria include its SC-75A (SOT-416) package, 20 V V_DS, 600 mA continuous drain current at 25 °C, fast 5 ns turn-on delay, and guaranteed low-threshold behavior down to 1.8 V logic levels - critical for ultra-low-power microcontroller I/O interfacing.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and stable V_GS(th) across temperature. Its gate-source ESD protection (2000 V HBM) and low 0.9 V typical threshold enable direct drive from 1.8 V/2.5 V GPIOs without level-shifting. The device is characterized for high-side configuration, with body diode forward voltage V_SD = 0.8–1.2 V at 150 mA.

Thermal performance is defined for surface-mount operation on FR4: R_thJA = 833 °C/W (SC-75A), limiting steady-state PD to 150 mW at 85 °C ambient. Dynamic parameters include Q_g = 750 pC, Q_gd = 225 pC, and t_f = 11 ns - supporting efficient switching in DC-DC converter synchronous rectification and load-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum drain-source blocking voltage; suitable for 12 V rail and Li-ion battery (≤4.2 V × 3) systems
R_DS(on) @ V_GS = 4.5 V	0.70 Ω - enables ≤210 mW conduction loss at 600 mA, critical for thermally constrained SC-75A packages
V_GS(th) typ.	0.9 V - ensures full enhancement with 1.8 V logic, eliminating need for external gate boosters
I_D cont. @ 25 °C	600 mA - maximum continuous drain current under JEDEC-standard FR4 board conditions
t_d(on)	5 ns - short turn-on delay supports >10 MHz PWM in power management ICs and LED drivers
ESD Rating (HBM)	2000 V - robust gate protection allows handling in standard assembly environments without special ESD controls
Package	SC-75A (SOT-416) - 1.575 mm × 1.60 mm footprint; compatible with 0.5 mm pitch reflow profiles

Pinout & Package

SI1012R-T1-GE3 is housed in the SC-75A (SOT-416) plastic package: 3-terminal, single-row surface-mount outline with gull-wing leads. Dimensions per DWG 5868: 1.575 mm length × 1.60 mm width × 0.80 mm height; lead pitch 0.95 mm; thermal pad not present.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 1.8–4.5 V logic; 2000 V HBM protected; requires <750 pC charge for full enhancement
2 (S)	Source	Reference node for gate drive; connected to system ground in low-side switch; tied to load return in high-side configuration
3 (D)	Drain	Power output terminal; handles up to 20 V and 600 mA; body diode anode connects internally to source

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.70 Ω R_DS(on) at 4.5 V in SC-75A - 30% lower than planar MOSFETs of same size, reducing heat generation
1.8 V gate-rated operation	Guaranteed turn-on at V_GS ≥ 1.8 V (V_GS(th) max = 1.0 V); eliminates level shifters in 1.8 V MCU designs
High-side switching capability	Validated for source-follower configuration with bootstrap or charge-pump gate drive; no internal level shifter required
Fast 5 ns turn-on delay	Minimizes overlap conduction loss in synchronous buck converters operating above 2 MHz
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B; marking code "C" per ordering table

Applications

Relay/Solenoid Driver	Portable Display Backlight Control
Use Scenario: Driving 12 V automotive relays or 5 V solenoids from low-voltage microcontrollers in battery-powered test equipment. IC Role / Device Role / Timing Role: High-side load switch; provides isolated power path with minimal voltage drop and fast response to MCU GPIO commands. Use Value: 0.85 Ω R_DS(on) at 2.5 V gate drive ensures <530 mW loss at 500 mA, extending battery life in handheld diagnostic tools.	Use Scenario: Controlling white LED strings in medical handheld displays powered by single-cell Li-ion batteries (2.8–4.2 V). IC Role / Device Role / Timing Role: Constant-current sink switch in PWM-dimmed LED driver stage; synchronizes with controller's 1–10 kHz dimming signal. Use Value: 5 ns t_d(on) and 11 ns t_f support clean 10 kHz PWM edges, eliminating visible flicker and audible noise in clinical environments.
Low-Voltage Power Supply Converter	Cell Phone Load Switching
Use Scenario: Synchronous rectifier in 3.3 V output buck converter for wearables, where efficiency at light loads determines standby time. IC Role / Device Role / Timing Role: Secondary-side power switch; replaces Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: 1.25 Ω R_DS(on) at V_GS = 1.8 V enables >92% efficiency at 100 mA output, outperforming discrete diodes by 8% in 3.3 V → 1.2 V conversion.	Use Scenario: Enabling/disabling RF power amplifier modules during sleep mode in 4G/5G smartphones to minimize quiescent current. IC Role / Device Role / Timing Role: Load switch isolating PA supply rail; controlled by baseband processor GPIO with 1.8 V logic compatibility. Use Value: 0.9 V typical V_GS(th) ensures full turn-on with zero additional gate bias circuitry, saving PCB area and BOM cost in space-constrained modules.

Relay/Solenoid Driver

Portable Display Backlight Control

Use Scenario: Driving 12 V automotive relays or 5 V solenoids from low-voltage microcontrollers in battery-powered test equipment.

IC Role / Device Role / Timing Role: High-side load switch; provides isolated power path with minimal voltage drop and fast response to MCU GPIO commands.

Use Value: 0.85 Ω R_DS(on) at 2.5 V gate drive ensures <530 mW loss at 500 mA, extending battery life in handheld diagnostic tools.

Use Scenario: Controlling white LED strings in medical handheld displays powered by single-cell Li-ion batteries (2.8–4.2 V).

IC Role / Device Role / Timing Role: Constant-current sink switch in PWM-dimmed LED driver stage; synchronizes with controller's 1–10 kHz dimming signal.

Use Value: 5 ns t_d(on) and 11 ns t_f support clean 10 kHz PWM edges, eliminating visible flicker and audible noise in clinical environments.

Low-Voltage Power Supply Converter

Cell Phone Load Switching

Use Scenario: Synchronous rectifier in 3.3 V output buck converter for wearables, where efficiency at light loads determines standby time.

IC Role / Device Role / Timing Role: Secondary-side power switch; replaces Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 1.25 Ω R_DS(on) at V_GS = 1.8 V enables >92% efficiency at 100 mA output, outperforming discrete diodes by 8% in 3.3 V → 1.2 V conversion.

Use Scenario: Enabling/disabling RF power amplifier modules during sleep mode in 4G/5G smartphones to minimize quiescent current.

IC Role / Device Role / Timing Role: Load switch isolating PA supply rail; controlled by baseband processor GPIO with 1.8 V logic compatibility.

Use Value: 0.9 V typical V_GS(th) ensures full turn-on with zero additional gate bias circuitry, saving PCB area and BOM cost in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN1019USN-7	R_DS(on) = 0.85 Ω @ V_GS = 2.5 V; SC-70 package; 30 V V_DS; no specified ESD rating	Higher V_DS margin but larger R_DS(on); less suitable for 1.8 V drive due to higher V_GS(th) (1.2 V typ.)	Prefer SI1012R-T1-GE3 when 1.8 V logic drive and 2000 V ESD are mandatory; DMN1019USN-7 fits where higher breakdown voltage is prioritized over gate drive simplicity.
AO3414	R_DS(on) = 0.55 Ω @ V_GS = 4.5 V; SOT-23 package; 20 V V_DS; V_GS(th) = 1.0–2.0 V (min/max)	SOT-23 offers higher power dissipation (350 mW) but lacks guaranteed 1.8 V turn-on; no HBM ESD spec provided	Select SI1012R-T1-GE3 for designs requiring assured 1.8 V operation and ESD-hardened gates; AO3414 suits cost-sensitive applications where 2.5 V+ gate drive is acceptable.

Compared with DMN1019USN-7 and AO3414, SI1012R-T1-GE3 uniquely guarantees sub-1.0 V gate threshold and 2000 V HBM protection in the compact SC-75A footprint - making it the only option among the three qualified for direct 1.8 V GPIO drive in high-reliability portable instrumentation.

Availability

SI1012R-T1-GE3 is available at Aetrix Electronics and suitable for relay drivers, portable display backlight control, and low-voltage power supply converter applications requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for SI1012R-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si1012R series belongs to Vishay's TrenchFET® low-voltage logic-level MOSFET product line, engineered specifically for high-side and low-side switching in space-constrained, battery-powered consumer and industrial electronics.

FAQ

What is the maximum continuous drain current for SI1012R-T1-GE3 at 85 °C ambient?

The maximum continuous drain current for SI1012R-T1-GE3 is 400 mA at T_A = 85 °C when mounted on a standard FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SC-75A package; exceeding this current risks junction temperature exceeding 150 °C, potentially triggering thermal shutdown or long-term reliability degradation. SI1012R-T1-GE3 must be used within this limit unless enhanced heatsinking is implemented.

Does SI1012R-T1-GE3 support true 1.8 V logic-level gate drive?

Yes, SI1012R-T1-GE3 is explicitly rated for 1.8 V gate drive: its gate threshold voltage V_GS(th) is specified from 0.45 V to 1.0 V, with 0.9 V typical, and R_DS(on) is guaranteed at V_GS = 1.8 V (1.25 Ω max at 350 mA). This enables full enhancement directly from 1.8 V microcontroller GPIOs without external level shifting - a key differentiator confirmed in the Product Summary and Specifications tables of Vishay document 71166.

What is the package type and lead finish of SI1012R-T1-GE3?

SI1012R-T1-GE3 uses the SC-75A (SOT-416) package, a 3-lead surface-mount outline measuring 1.575 mm × 1.60 mm. Its lead finish is 100% matte tin, fully compliant with RoHS Directive 2011/65/EU and JEDEC JS709B for halogen-free requirements. The "GE3" suffix denotes lead (Pb)-free and halogen-free construction, and the top-marking code is "C", as documented in the Ordering Information section of Vishay's datasheet 71166.

Can SI1012R-T1-GE3 be used in high-side switching configurations?

Yes, SI1012R-T1-GE3 is validated for high-side switching: its datasheet lists "High-Side Switching" under FEATURES and specifies dynamic parameters (Q_g, Q_gd) relevant to bootstrap gate drive. The device's 20 V V_DS rating and low R_DS(on) at 1.8–4.5 V make it suitable for source-follower configurations where the source connects to the positive rail. No internal level shifter is required, but external gate drive circuitry (e.g., charge pump) must provide sufficient V_GS relative to the source potential.

What is the gate-source ESD rating for SI1012R-T1-GE3?

The gate-source ESD rating for SI1012R-T1-GE3 is 2000 V per Human Body Model (HBM), as stated in both the FEATURES list and ABSOLUTE MAXIMUM RATINGS table of Vishay document 71166. This rating is measured per JEDEC standard JESD22-A114 and applies to the gate-to-source terminals only. It confirms robustness against common handling ESD events, reducing the need for additional external protection in final assembly - a key advantage over non-ESD-rated MOSFETs like many SOT-23 alternatives.

SI1012R-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.75 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 150mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75A

SI1012R-T1-GE3 FAQ

1.How can I place an order for SI1012R-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1012R-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1012R-T1-GE3 reliable?

The price and inventory of SI1012R-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1012R-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1012R-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1012R-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1012R-T1-GE3?

SI1012R-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1012R-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1012R-T1-GE3?

For technical support, including SI1012R-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1012R-T1-GE3 requirements.

6.How does Aetrix verify that SI1012R-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1012R-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1012R-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1012R-T1-GE3?

All SI1012R-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1012R-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1012R-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1012R-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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