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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1012X-T1-E3

Name: SI1012X-T1-E3
Brand: Vishay Siliconix
SKU: SI1012X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1012X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-89, SOT-490

Datasheet:: SI1012X-T1-E3.pdf

Description:: MOSFET N-CH 20V 500MA SC89-3

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Product details

Overview

SI1012X-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 1.8 V gate drive, optimized for high-side switching in low-voltage battery-operated systems. It delivers R_DS(on) = 0.70 Ω at V_GS = 4.5 V, 0.85 Ω at V_GS = 2.5 V, and 1.25 Ω at V_GS = 1.8 V, with 600 mA continuous drain current and 2000 V HBM ESD protection.

For engineers reviewing the SI1012X-T1-E3 datasheet, SI1012X-T1-E3 pinout, SI1012X-T1-E3 application, or SI1012X-T1-E3 equivalent, this device is selected for compact load switching where low-threshold operation, fast 10 ns switching, and SC-89 (SOT-490) thermal performance are critical - especially in space-constrained portable electronics and power management subsystems.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve stable sub-1 V threshold voltage (V_GS(th) = 0.45–0.9 V typ.) and low on-resistance across 1.8–4.5 V gate drive. Its gate-source ESD rating of 2000 V (HBM) enables robust handling in automated assembly without additional protection circuitry.

The device operates as a single high-side switch with integrated body diode (V_SD = 0.8–1.2 V at I_S = 150 mA), supporting unidirectional load control in DC-DC converter synchronous rectification, relay/solenoid drivers, and display backlight switching - all within a 150 °C maximum junction temperature limit.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	20 V - supports input rails up to 18 V with margin for transients in portable power systems
R_DS(on) @ V_GS = 4.5 V	0.70 Ω - enables <100 mW conduction loss at 600 mA, reducing thermal stress in SC-89 package
V_GS(th) Typ	0.9 V - ensures reliable turn-on from 1.8 V logic or battery sources down to ~1.2 V under aging
Q_g	750 pC - balances switching speed (t_d(on)/t_f = 5/11 ns) and gate driver current requirements
P_D @ T_A = 25 °C (SC-89)	250 mW - defines maximum steady-state power dissipation before derating begins at 85 °C ambient
ESD Rating (HBM)	2000 V - eliminates need for external ESD clamps in board-level handling and assembly

Pinout & Package

SI1012X-T1-E3 is housed in SC-89 (SOT-490), a 3-lead surface-mount plastic package measuring 1.575 mm × 1.60 mm × 0.80 mm (L × W × H), optimized for high thermal conductivity and minimal PCB footprint in ultra-compact designs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for load current	Internally connected to substrate; requires low-impedance ground plane for thermal and EMI performance
2 (Gate)	Control terminal for channel conduction	ESD-protected input; driven directly by 1.8 V logic with ≤10 Ω series resistance to damp ringing
3 (Drain)	High-side load connection point	Connected to positive supply rail; carries full load current and must be routed with adequate copper area

Key Features

Feature	Design Value
TrenchFET® architecture	Enables stable 0.9 V typical threshold and <1.25 Ω R_DS(on) at 1.8 V gate drive for true low-voltage operation
High-side switching capability	Supports direct connection between V_IN and load without level-shifting circuitry in PMIC or battery management blocks
Fast 10 ns switching	Reduces transition losses in PWM-driven loads like solenoids and LED backlights operating above 100 kHz
SC-89 thermal performance	Delivers 250 mW power dissipation at 25 °C ambient - 43 % higher than SC-75A variant for same footprint class

Applications

Relay/Solenoid Driver	Cell Phone Load Switch
Use Scenario: Driving 12 V/100 mA electromechanical relay coil from a 1.8 V microcontroller GPIO. IC Role / Device Role / Timing Role: High-side switch controlling coil energization; handles inductive kickback via body diode. Use Value: Eliminates need for external level shifter or charge pump; 0.9 V V_GS(th) ensures >95 % duty cycle margin at 1.8 V supply.	Use Scenario: Enabling/disabling camera flash LED power rail in smartphone mainboard during burst capture mode. IC Role / Device Role / Timing Role: Load switch isolating flash IC from battery during standby; switched at 100 Hz–1 kHz PWM. Use Value: 5 ns turn-on delay and 11 ns fall time support precise timing control; SC-89 footprint fits tight camera module layout.
Low-Voltage DC-DC Converter	Display Backlight Control
Use Scenario: Synchronous rectifier in 3.3 V output buck converter powered from single-cell Li-ion (2.8–4.2 V). IC Role / Device Role / Timing Role: Low-side or high-side synchronous FET replacing Schottky diode; commutated by controller PWM signal. Use Value: 0.70 Ω R_DS(on) at 4.5 V reduces conduction loss by >60 % vs. 0.3 V Schottky, improving efficiency at 500 mA load.	Use Scenario: Controlling white LED string current (350 mA) in OLED display power tree using PWM dimming. IC Role / Device Role / Timing Role: High-side current switch modulated at 1–5 kHz to regulate average LED brightness. Use Value: 2000 V HBM ESD rating prevents field failure during display module handling; 1.25 Ω R_DS(on) at 1.8 V enables direct MCU GPIO control.

Relay/Solenoid Driver

Cell Phone Load Switch

Use Scenario: Driving 12 V/100 mA electromechanical relay coil from a 1.8 V microcontroller GPIO.

IC Role / Device Role / Timing Role: High-side switch controlling coil energization; handles inductive kickback via body diode.

Use Value: Eliminates need for external level shifter or charge pump; 0.9 V V_GS(th) ensures >95 % duty cycle margin at 1.8 V supply.

Use Scenario: Enabling/disabling camera flash LED power rail in smartphone mainboard during burst capture mode.

IC Role / Device Role / Timing Role: Load switch isolating flash IC from battery during standby; switched at 100 Hz–1 kHz PWM.

Use Value: 5 ns turn-on delay and 11 ns fall time support precise timing control; SC-89 footprint fits tight camera module layout.

Low-Voltage DC-DC Converter

Display Backlight Control

Use Scenario: Synchronous rectifier in 3.3 V output buck converter powered from single-cell Li-ion (2.8–4.2 V).

IC Role / Device Role / Timing Role: Low-side or high-side synchronous FET replacing Schottky diode; commutated by controller PWM signal.

Use Value: 0.70 Ω R_DS(on) at 4.5 V reduces conduction loss by >60 % vs. 0.3 V Schottky, improving efficiency at 500 mA load.

Use Scenario: Controlling white LED string current (350 mA) in OLED display power tree using PWM dimming.

IC Role / Device Role / Timing Role: High-side current switch modulated at 1–5 kHz to regulate average LED brightness.

Use Value: 2000 V HBM ESD rating prevents field failure during display module handling; 1.25 Ω R_DS(on) at 1.8 V enables direct MCU GPIO control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1012R-T1-GE3	Same die, SC-75A (SOT-416) package - 17 % smaller footprint but 30 % lower P_D (150 mW vs. 250 mW)	Better suited for ultra-dense layouts where thermal budget allows <150 mW dissipation	Select Si1012R-T1-GE3 only if board space is more constrained than thermal margin.
DMN1020UCB-7	Diodes Inc. 20 V N-ch MOSFET; R_DS(on) = 0.85 Ω @ V_GS = 2.5 V; 1.2 V V_GS(th) typ.; X1-DFN1006-3 package	Higher threshold limits use below 2.5 V logic; DFN package offers better thermal resistance but no leaded option	Choose DMN1020UCB-7 when DFN reflow compatibility and slightly lower R_DS(on) at 2.5 V are prioritized over 1.8 V drive capability.

Compared with SI1012X-T1-E3, Si1012R-T1-GE3 trades thermal headroom for size reduction, while DMN1020UCB-7 shifts design focus toward 2.5 V+ logic compatibility and DFN manufacturability - neither is pin-compatible, but both serve overlapping low-voltage switching roles with distinct trade-offs in threshold, package, and thermal envelope.

Availability

SI1012X-T1-E3 is available at Aetrix Electronics and suitable for battery-operated systems, portable display modules, and power supply converter circuits requiring stable component supply and consistent SC-89 packaging.

Supply support for SI1012X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1012X belongs to Vishay's TrenchFET® low-threshold MOSFET product line, engineered specifically for high-efficiency, space-constrained load switching in battery-powered consumer and portable industrial electronics.

FAQ

What is the maximum continuous drain current for SI1012X-T1-E3 at 85 °C ambient?

The SI1012X-T1-E3 supports 350 mA continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating from 500 mA at 25 °C reflects thermal limitations of the SC-89 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow.

Does SI1012X-T1-E3 have built-in ESD protection, and what is its rating?

Yes, SI1012X-T1-E3 features integrated gate-source ESD protection rated at 2000 V per Human Body Model (HBM), per Method 3015 testing. This eliminates the need for external TVS devices in most handheld and portable applications, simplifying layout and reducing BOM count.

Can SI1012X-T1-E3 be used as a low-side switch?

While SI1012X-T1-E3 is characterized and optimized for high-side switching, it can function as a low-side switch. However, its source terminal is internally tied to the substrate and intended as the reference node; for low-side use, ensure gate drive is referenced to source and verify layout avoids ground bounce coupling into the gate.

What is the gate threshold voltage range for SI1012X-T1-E3, and how does it affect 1.8 V logic compatibility?

The SI1012X-T1-E3 has a guaranteed V_GS(th) range of 0.45 V (min) to 0.9 V (typ.), with max 1.2 V. At 1.8 V logic, this provides >1 V overdrive margin, ensuring strong enhancement-mode conduction and minimizing R_DS(on) variation across process and temperature - critical for stable battery discharge profiles.

How does the SC-89 package of SI1012X-T1-E3 compare thermally to SC-75A?

The SC-89 package used in SI1012X-T1-E3 provides 250 mW maximum power dissipation at 25 °C ambient, versus 150 mW for the SC-75A-packaged Si1012R-T1-GE3 - a 67 % improvement. This results from larger pad exposure and enhanced thermal path to PCB, enabling higher current operation in identical board area.

SI1012X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-89, SOT-490

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.75 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 250mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89-3

SI1012X-T1-E3 FAQ

1.How can I place an order for SI1012X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1012X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1012X-T1-E3 reliable?

The price and inventory of SI1012X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1012X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1012X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1012X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1012X-T1-E3?

SI1012X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1012X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1012X-T1-E3?

For technical support, including SI1012X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1012X-T1-E3 requirements.

6.How does Aetrix verify that SI1012X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1012X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1012X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1012X-T1-E3?

All SI1012X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1012X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1012X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1012X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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