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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1012X-T1-GE3

Name: SI1012X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1012X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1012X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-89, SOT-490

Datasheet:: SI1012X-T1-GE3.pdf

Description:: MOSFET N-CH 20V 500MA SC89-3

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Product details

Overview

SI1012X-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 1.8 V gate drive, optimized for high-side switching in low-voltage battery-operated systems. It delivers R_DS(on) = 0.70 Ω at V_GS = 4.5 V, 0.85 Ω at 2.5 V, and 1.25 Ω at 1.8 V, with a 0.9 V typical gate threshold and 2000 V HBM ESD rating - enabling direct microcontroller-level control in portable displays and load-switching applications.

For engineers reviewing the SI1012X-T1-GE3 datasheet, SI1012X-T1-GE3 pinout, SI1012X-T1-GE3 application, or SI1012X-T1-GE3 equivalent, this page provides verified package mapping (SC-89/SOT-490), validated static/dynamic parameters, confirmed thermal limits (T_J = –55 to 150 °C), and real-world switching performance (t_d(on) = 5 ns, t_f = 11 ns) critical for compact DC-DC converter and solenoid driver designs.

Technical Context

This device operates as a logic-level enhancement-mode MOSFET with gate-source voltage range ±6 V and drain-source breakdown voltage of 20 V. Its trench-based silicon structure enables low R_DS(on) at sub-2.5 V gate drive while maintaining robust 2000 V HBM ESD protection on the gate terminal.

Designed for surface-mount operation on FR4 PCBs, it supports continuous drain current up to 500 mA at 25 °C ambient (250 mW max power dissipation), with pulsed capability to 1000 mA. The body diode exhibits V_SD = 0.8–1.2 V at I_S = 150 mA, confirming suitability for bidirectional current paths in power management circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage before avalanche; sets upper limit for supply rail compatibility in 3.3 V/5 V systems.
R_DS(on) @ V_GS = 4.5 V	0.41–0.70 Ω - Enables <100 mW conduction loss at 600 mA, critical for thermally constrained SC-89 packages.
V_GS(th)	0.45–0.9 V (typ. 0.9 V) - Ensures reliable turn-on with 1.8 V GPIO outputs, eliminating need for level-shifting circuitry.
I_D Continuous @ 25 °C	500 mA - Sustained load current capability under standard board conditions; derates to 350 mA at 85 °C ambient.
t_d(on) / t_f	5 ns / 11 ns - Fast edge rates support >10 MHz switching in synchronous buck stages or PWM-driven lamps.
Q_g	750 pC - Gate charge magnitude determines driver strength requirement; compatible with low-current MCU GPIOs when operated at ≤1 MHz.
T_J Range	–55 to 150 °C - Qualified for industrial and automotive cabin environments without derating penalties below 125 °C.

Pinout & Package

SI1012X-T1-GE3 is housed in the SC-89 (SOT-490) plastic surface-mount package - a 3-lead, single-ended leadframe variant measuring 1.575 mm × 1.60 mm × 0.80 mm (L × W × H), optimized for high-density PCB layouts and automated placement.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input; accepts 0–4.5 V logic signals; 2000 V HBM ESD protected; requires no external gate resistor for <1 MHz switching.
2 (D)	Drain	High-side switch output node; connects to load supply rail; handles 20 V max blocking and 1000 mA pulsed current.
3 (S)	Source	Power return path; tied to system ground or low-side reference; forms body diode anode for reverse-current conduction.

Key Features

Feature	Design Value
1.8 V gate-rated TrenchFET® structure	Enables direct interface with 1.8 V/2.5 V microcontrollers and ASICs without level shifters or gate drivers.
2000 V HBM ESD protection on gate	Eliminates need for external ESD clamps in handheld and wearable designs where handling exposure is frequent.
Low R_DS(on) at 1.8 V V_GS	1.25 Ω at 350 mA ensures <155 mW conduction loss - sufficient for driving LEDs, relays, and small solenoids from coin-cell supplies.
Fast 5 ns turn-on delay	Supports precise timing-critical loads such as display backlight PWM dimming with minimal dead-time distortion.
SC-89 package thermal resistance	R_θJA = 600 °C/W (typ.) allows 500 mA operation on standard FR4 without heatsinking in space-constrained modules.

Applications

Portable Display Backlight Control	Low-Voltage Relay Driver
Use Scenario: Driving white LED strings in smartwatch or medical monitor displays powered by 2.5–3.3 V Li-ion cells. IC Role / Device Role / Timing Role: High-side constant-current switch controlled by PWM from an ARM Cortex-M0+ MCU. Use Value: Sub-1 V gate threshold ensures full enhancement at battery voltages down to 2.7 V, preserving brightness across discharge cycle.	Use Scenario: Energizing miniature latching relays in battery-powered IoT sensor nodes with 3.3 V supply rails. IC Role / Device Role / Timing Role: Load switch isolating relay coil from MCU GPIO during sleep mode. Use Value: 0.85 Ω R_DS(on) at 2.5 V reduces coil power loss by >40% vs. discrete BJT alternatives, extending node battery life.
USB-Powered Peripheral Power Switch	Memory Backup Power Path
Use Scenario: Enabling/disabling 5 V USB peripheral power in portable docking stations with overcurrent detection. IC Role / Device Role / Timing Role: High-side OR-ing switch between USB host and internal LDO output. Use Value: 20 V V_DS rating accommodates transient surges up to 18 V, meeting USB-IF compliance margin requirements.	Use Scenario: Controlling backup power delivery to SRAM or RTC circuits during main supply brownout events. IC Role / Device Role / Timing Role: Low-leakage (100 nA IDSS) power-path selector activated by voltage supervisor signal. Use Value: 0.3 nA typical I_DSS at 25 °C minimizes self-discharge of backup capacitors over months of storage.

Portable Display Backlight Control

Low-Voltage Relay Driver

Use Scenario: Driving white LED strings in smartwatch or medical monitor displays powered by 2.5–3.3 V Li-ion cells.

IC Role / Device Role / Timing Role: High-side constant-current switch controlled by PWM from an ARM Cortex-M0+ MCU.

Use Value: Sub-1 V gate threshold ensures full enhancement at battery voltages down to 2.7 V, preserving brightness across discharge cycle.

Use Scenario: Energizing miniature latching relays in battery-powered IoT sensor nodes with 3.3 V supply rails.

IC Role / Device Role / Timing Role: Load switch isolating relay coil from MCU GPIO during sleep mode.

Use Value: 0.85 Ω R_DS(on) at 2.5 V reduces coil power loss by >40% vs. discrete BJT alternatives, extending node battery life.

USB-Powered Peripheral Power Switch

Memory Backup Power Path

Use Scenario: Enabling/disabling 5 V USB peripheral power in portable docking stations with overcurrent detection.

IC Role / Device Role / Timing Role: High-side OR-ing switch between USB host and internal LDO output.

Use Value: 20 V V_DS rating accommodates transient surges up to 18 V, meeting USB-IF compliance margin requirements.

Use Scenario: Controlling backup power delivery to SRAM or RTC circuits during main supply brownout events.

IC Role / Device Role / Timing Role: Low-leakage (100 nA IDSS) power-path selector activated by voltage supervisor signal.

Use Value: 0.3 nA typical I_DSS at 25 °C minimizes self-discharge of backup capacitors over months of storage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN1020UCB4-7	R_DS(on) = 0.45 Ω @ V_GS = 2.5 V; 12 V V_DS; X1-DFN1006-3 package (0.98 × 0.78 mm)	Lower voltage rating restricts use to ≤12 V systems; smaller footprint but higher thermal resistance.	Select when board area is critical and supply is ≤12 V; verify layout clearance for DFN thermal pad.
AO3414	R_DS(on) = 0.052 Ω @ V_GS = 4.5 V; 20 V V_DS; SOT-23 package; Q_g = 4.2 nC	Higher gate charge demands stronger driver; lower R_DS(on) suits higher-current loads (>1 A).	Choose for higher-efficiency 20 V load switching where gate drive capability permits; not suitable for 1.8 V-only control.

Compared with DMN1020UCB4-7 and AO3414, SI1012X-T1-GE3 uniquely balances 20 V rating, 1.8 V logic compatibility, and SC-89 thermal performance - making it optimal for space-constrained, ultra-low-voltage systems where both gate drive simplicity and voltage margin matter.

Availability

SI1012X-T1-GE3 is available at Aetrix Electronics and suitable for portable display backlight control, low-voltage relay drivers, USB-powered peripheral power switches, and memory backup power path management requiring stable component supply across production lifecycles.

Supply support for SI1012X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and resistive components with emphasis on reliability and high-volume manufacturability.

The Si1012X series belongs to Vishay's logic-level TrenchFET® portfolio, engineered specifically for high-side switching in battery-powered consumer and industrial equipment operating at 1.8–3.3 V supply rails.

FAQ

What is the maximum continuous drain current for SI1012X-T1-GE3 at 85 °C ambient temperature?

The SI1012X-T1-GE3 supports 350 mA continuous drain current at 85 °C ambient temperature when mounted on a standard FR4 PCB, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced power dissipation capability (140 mW) at elevated ambient temperatures, and must be validated against actual board layout and airflow conditions in the final design.

Does SI1012X-T1-GE3 have integrated ESD protection, and what is its rating?

Yes, SI1012X-T1-GE3 features built-in gate-source ESD protection rated at 2000 V per Human Body Model (HBM) Method 3015. This protection is process-integrated and does not require external TVS devices for handling or assembly in typical manufacturing environments, though system-level ESD remains the responsibility of the end application design.

Can SI1012X-T1-GE3 be used as a high-side switch with a 1.8 V microcontroller GPIO?

Yes, SI1012X-T1-GE3 is explicitly rated for 1.8 V gate drive, with a typical gate threshold voltage of 0.9 V and guaranteed turn-on at V_GS ≥ 1.8 V. Its R_DS(on) = 1.25 Ω at 350 mA under these conditions confirms functional high-side switching capability directly from 1.8 V logic outputs without level translation.

What is the package type and lead count of SI1012X-T1-GE3?

SI1012X-T1-GE3 uses the SC-89 (SOT-490) package - a 3-lead, single-ended surface-mount outline measuring 1.575 mm × 1.60 mm × 0.80 mm. It shares pinout compatibility with SC-75A but features distinct leadframe geometry and thermal characteristics optimized for higher power density.

How does the body diode forward voltage of SI1012X-T1-GE3 affect reverse-current applications?

The SI1012X-T1-GE3 body diode exhibits V_SD = 0.8–1.2 V at I_S = 150 mA, confirming usable conduction in reverse-biased configurations such as power-path OR-ing or flyback energy recovery. However, designers must account for this forward drop in efficiency calculations and ensure junction temperature remains within –55 to 150 °C limits during sustained reverse conduction.

SI1012X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-89, SOT-490

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.75 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 250mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89-3

SI1012X-T1-GE3 FAQ

1.How can I place an order for SI1012X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1012X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1012X-T1-GE3 reliable?

The price and inventory of SI1012X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1012X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1012X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1012X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1012X-T1-GE3?

SI1012X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1012X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1012X-T1-GE3?

For technical support, including SI1012X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1012X-T1-GE3 requirements.

6.How does Aetrix verify that SI1012X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1012X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1012X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1012X-T1-GE3?

All SI1012X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1012X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1012X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1012X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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