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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1013R-T1-E3

Name: SI1013R-T1-E3
Brand: Vishay Siliconix
SKU: SI1013R-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1013R-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: SI1013R-T1-E3.pdf

Description:: MOSFET P-CH 20V 350MA SC75A

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Product details

Overview

SI1013R-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for high-side load switching in low-voltage battery-powered systems, featuring 1.2 Ω R_DS(on) at V_GS = −4.5 V, −20 V V_DS, and 1.8 V logic-compatible gate threshold (0.8 V typ.), used in cell phone power switching and relay drivers.

For engineers reviewing the SI1013R-T1-E3 datasheet, SI1013R-T1-E3 pinout, SI1013R-T1-E3 application, or SI1013R-T1-E3 equivalent, key selection criteria include its SC-75A package footprint, 2000 V HBM ESD rating, fast 14 ns switching, and guaranteed operation down to 1.8 V gate drive in space-constrained portable electronics.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with trench-based silicon architecture, enabling low on-resistance and stable threshold voltage across temperature (−55 °C to 150 °C). Its gate threshold of −0.45 V (min) and −0.8 V (typ) ensures reliable turn-on with 1.8 V microcontroller I/O.

The integrated body diode supports reverse-current paths in DC-DC converter synchronous rectification and load-dump protection, while 1500 pC total gate charge and 450 pC Q_gd enable efficient high-speed switching with minimal Miller effect in compact SC-75A layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum drain-source blocking voltage for use in 12 V or lower rail systems without breakdown risk.
R_DS(on)	1.2 Ω at V_GS = −4.5 V - Enables ≤0.15 W conduction loss at 350 mA load current, critical for thermal management in sealed handheld enclosures.
V_GS(th)	−0.45 V (min), −0.8 V (typ) - Ensures full enhancement with 1.8 V logic outputs, eliminating need for level-shifting circuitry.
Q_g	1500 pC - Determines gate driver strength requirement; compatible with standard GPIOs driving ≤100 kHz switching without external buffer.
t_f/t_r	11 ns / 9 ns - Supports >5 MHz PWM frequencies in battery charger control loops with minimal switching loss.
ESD Rating	2000 V HBM - Meets IEC 61000-4-2 Level 2 for robustness during board assembly and end-user handling.
P_D (SC-75A)	150 mW (steady-state, T_A = 85 °C) - Defines maximum continuous power dissipation on FR4 PCB without heatsink or airflow.

Pinout & Package

SI1013R-T1-E3 is housed in the SC-75A (SOT-416) surface-mount package: 1.575 mm × 1.60 mm × 0.80 mm body, 3-terminal leadframe with gull-wing leads, optimized for automated placement and reflow on 0.356 mm pad width footprints per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input; accepts 0 V to −4.5 V logic signals; 1 µA max leakage at ±4.5 V enables direct MCU interface without pull-down resistors.
2 (S)	Source	Reference node for gate drive; connects to positive supply rail in high-side switch configuration; hosts body diode anode.
3 (D)	Drain	Switched output node; connects to load; rated for −20 V blocking and −350 mA continuous current at T_A = 25 °C.

Key Features

Feature	Design Value
1.8 V Gate Drive Compatibility	Guaranteed turn-on with 1.8 V logic rails, reducing BOM count by eliminating level shifters in ultra-low-power IoT sensor nodes.
TrenchFET® Architecture	Delivers 1.2 Ω R_DS(on) in SC-75A - 30 % lower on-resistance than planar equivalents at same die size, improving efficiency in space-limited wearables.
High-Speed Switching	14 ns total propagation delay enables precise timing control in LED strobe drivers and solenoid pulse-width modulation.
2000 V HBM ESD Protection	Eliminates need for external TVS diodes in consumer handset front-end power switches, lowering system cost and PCB area.
Halogen-Free & RoHS Compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - qualifies for export to EU, Japan, and China without material declaration exceptions.

Applications

Smartphone Power Switching	Portable Medical Sensor Biasing
Use Scenario: Enabling/disabling camera flash LED power rail in LTE smartphones with 1.8 V application processor GPIO control. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V rail to flash IC; toggled synchronously with image capture interrupt. Use Value: 1.2 Ω R_DS(on) limits voltage drop to <100 mV at 300 mA, preserving flash brightness; 14 ns switching prevents exposure timing jitter.	Use Scenario: Supplying regulated bias voltage to electrochemical glucose sensor electrodes in disposable patch monitors. IC Role / Device Role / Timing Role: Precision on/off control of 2.5 V analog front-end supply; activated only during 100 ms measurement windows. Use Value: 0.8 V typical V_GS(th) ensures full enhancement with low-power MCU's 1.8 V I/O; 2000 V ESD protects sensitive analog inputs during handling.
Industrial Relay Driver	Low-Power Display Backlight Control
Use Scenario: Driving 12 V coil relays in programmable logic controller (PLC) I/O modules powered from 3.3 V logic rails. IC Role / Device Role / Timing Role: High-side interface between microcontroller and relay coil; handles inductive kickback via integrated body diode. Use Value: −20 V V_DS rating safely clamps 12 V coil flyback transients; 1.6 Ω R_DS(on) at V_GS = −2.5 V ensures reliable activation even under brownout conditions.	Use Scenario: Controlling white LED backlight current in handheld barcode scanners using PWM dimming from 1.8 V SoC timers. IC Role / Device Role / Timing Role: Synchronous high-side switch modulating LED string current at 1–5 kHz; placed between battery and LED driver IC. Use Value: Fast 9 ns rise time preserves PWM duty cycle fidelity; SC-75A footprint fits within 2.0 mm × 2.5 mm display bezel constraints.

Smartphone Power Switching

Portable Medical Sensor Biasing

Use Scenario: Enabling/disabling camera flash LED power rail in LTE smartphones with 1.8 V application processor GPIO control.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V rail to flash IC; toggled synchronously with image capture interrupt.

Use Value: 1.2 Ω R_DS(on) limits voltage drop to <100 mV at 300 mA, preserving flash brightness; 14 ns switching prevents exposure timing jitter.

Use Scenario: Supplying regulated bias voltage to electrochemical glucose sensor electrodes in disposable patch monitors.

IC Role / Device Role / Timing Role: Precision on/off control of 2.5 V analog front-end supply; activated only during 100 ms measurement windows.

Use Value: 0.8 V typical V_GS(th) ensures full enhancement with low-power MCU's 1.8 V I/O; 2000 V ESD protects sensitive analog inputs during handling.

Industrial Relay Driver

Low-Power Display Backlight Control

Use Scenario: Driving 12 V coil relays in programmable logic controller (PLC) I/O modules powered from 3.3 V logic rails.

IC Role / Device Role / Timing Role: High-side interface between microcontroller and relay coil; handles inductive kickback via integrated body diode.

Use Value: −20 V V_DS rating safely clamps 12 V coil flyback transients; 1.6 Ω R_DS(on) at V_GS = −2.5 V ensures reliable activation even under brownout conditions.

Use Scenario: Controlling white LED backlight current in handheld barcode scanners using PWM dimming from 1.8 V SoC timers.

IC Role / Device Role / Timing Role: Synchronous high-side switch modulating LED string current at 1–5 kHz; placed between battery and LED driver IC.

Use Value: Fast 9 ns rise time preserves PWM duty cycle fidelity; SC-75A footprint fits within 2.0 mm × 2.5 mm display bezel constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET high-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1023R-T1-E3	Same SC-75A package, −30 V V_DS, 2.5 Ω R_DS(on) at V_GS = −4.5 V, higher threshold (−1.0 V typ).	Better for 24 V industrial loads but requires ≥2.5 V gate drive; less suitable for 1.8 V logic interfaces.	Select when higher blocking voltage is needed and gate drive voltage exceeds 2.5 V.
DMN1019USD-13	SC-70 package, −20 V V_DS, 1.4 Ω R_DS(on) at V_GS = −4.5 V, 1.2 V V_GS(th) (typ), no halogen-free certification.	Compatible footprint but slightly larger thermal resistance; lacks 2000 V HBM rating and halogen-free compliance.	Select for cost-sensitive consumer designs where ESD robustness and environmental compliance are secondary.

Compared with SI1013R-T1-E3, Si1023R-T1-E3 trades lower on-resistance for higher voltage rating and gate threshold, while DMN1019USD-13 offers similar performance in a non-halogen-free SC-70 variant-neither is pin-compatible, requiring layout revision for substitution.

Availability

SI1013R-T1-E3 is available at Aetrix Electronics and suitable for smartphone power switching, portable medical sensor biasing, and industrial relay driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for SI1013R-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1013R/X series belongs to Vishay's TrenchFET® low-voltage P-channel MOSFET product line, engineered specifically for high-side switching in space-constrained, battery-operated portable electronics where 1.8 V compatibility and ultra-small footprint are mandatory.

FAQ

What is the maximum continuous drain current for SI1013R-T1-E3 at 85 °C ambient?

The SI1013R-T1-E3 supports −275 mA continuous drain current at T_A = 85 °C when mounted on an FR4 board, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced power dissipation (80 mW) at elevated ambient temperatures and must be validated against actual PCB copper area and airflow in the final design. The SI1013R-T1-E3 datasheet confirms this limit applies to steady-state operation without pulse width restriction.

Does SI1013R-T1-E3 have integrated ESD protection, and what is its rating?

Yes, the SI1013R-T1-E3 features built-in human-body-model (HBM) ESD protection rated at 2000 V, per JEDEC JS-001. This protection is verified per test Method 3015 and applies to the gate-source terminals. It eliminates the need for external ESD suppression components in most portable electronics applications, and the SI1013R-T1-E3 maintains this rating across its full operating temperature range (−55 °C to 150 °C).

Can SI1013R-T1-E3 operate reliably with a 1.8 V microcontroller GPIO?

Yes, the SI1013R-T1-E3 is explicitly characterized for 1.8 V operation, with a typical gate threshold voltage of −0.8 V and minimum of −0.45 V. At V_GS = −1.8 V, it delivers −150 mA with R_DS(on) = 2.7 Ω - sufficient for low-current loads like LED indicators or sensor bias rails. The SI1013R-T1-E3 datasheet guarantees functionality across this voltage, making it suitable for direct interface with 1.8 V logic without level shifting.

What is the thermal resistance junction-to-ambient for SI1013R-T1-E3 in SC-75A package?

The SI1013R-T1-E3 in SC-75A has a normalized thermal transient impedance of 833 °C/W (junction-to-ambient, R_thJA) under standard surface-mount conditions on FR4. This value is derived from the normalized thermal transient impedance curve in the datasheet and assumes no additional copper pour or airflow. For sustained 150 mW power dissipation, the SI1013R-T1-E3 junction temperature rise will exceed safe limits unless PCB layout includes thermal relief pads or localized copper planes.

Is SI1013R-T1-E3 halogen-free and RoHS compliant?

Yes, the SI1013R-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with the RoHS Directive 2002/95/EC. These certifications are explicitly stated in the Features section of the official Vishay datasheet (Document Number: 71167, Rev. D), and the "-E3" suffix denotes lead (Pb)-free and halogen-free construction. The SI1013R-T1-E3 meets environmental requirements for global commercial and medical device markets.

SI1013R-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 150mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75A

SI1013R-T1-E3 FAQ

1.How can I place an order for SI1013R-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1013R-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1013R-T1-E3 reliable?

The price and inventory of SI1013R-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1013R-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1013R-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1013R-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1013R-T1-E3?

SI1013R-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1013R-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1013R-T1-E3?

For technical support, including SI1013R-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1013R-T1-E3 requirements.

6.How does Aetrix verify that SI1013R-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1013R-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1013R-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1013R-T1-E3?

All SI1013R-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1013R-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1013R-T1-E3 part is unused and in its original packaging.

Return procedure for SI1013R-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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