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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1013R-T1-GE3

Name: SI1013R-T1-GE3
Brand: Vishay Siliconix
SKU: SI1013R-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1013R-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: SI1013R-T1-GE3.pdf

Description:: MOSFET P-CH 20V 350MA SC75A

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Product details

Overview

SI1013R-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for high-side load switching in low-voltage battery-powered systems, featuring −20 V V_DS, 1.2 Ω R_DS(on) at V_GS = −4.5 V, 0.8 V typical gate threshold, and SC-75A (SOT-416) package. It enables efficient power control in portable electronics with fast 14 ns switching and 2000 V HBM ESD protection.

For engineers reviewing the SI1013R-T1-GE3 datasheet, SI1013R-T1-GE3 pinout, SI1013R-T1-GE3 application, or SI1013R-T1-GE3 equivalent, key selection criteria include verified −1.8 V logic-level gate drive compatibility, guaranteed R_DS(on) at V_GS = −1.8 V (2.7 Ω), thermal performance on FR4 (175 mW P_D), and SC-75A footprint constraints for space-constrained PCB layouts.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with trench-gate architecture, supporting high-side switching topologies where source connects to V_IN and drain delivers regulated load current. Its −0.45 V minimum V_GS(th) ensures reliable turn-on with 1.8 V microcontroller I/O, while integrated body diode supports reverse-current paths in DC-DC converter synchronous rectification.

Thermal design relies on junction-to-ambient transient impedance (833 °C/W base) and steady-state dissipation limits (150 mW at 85 °C ambient). Gate charge parameters (Q_g = 1500 pC, Q_gd = 450 pC) define switching loss behavior under 10 Ω gate drive, and dynamic timing (t_d(off) = 35 ns) confirms suitability for sub-10 MHz digital load control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum blocking voltage for battery-input circuits up to 12 V nominal systems.
R_DS(on)	1.2 Ω @ V_GS = −4.5 V: Confirmed conduction loss of ≤440 mW at −350 mA continuous drain current.
V_GS(th)	−0.45 V (min): Ensures full enhancement with 1.8 V logic outputs without level-shifting circuitry.
I_D (cont)	−350 mA @ T_A = 25 °C: Continuous load current rating on standard FR4 board per Vishay test condition b.
t_f	11 ns: Verified fall time into 47 Ω load, enabling clean edge transitions in digital power sequencing.
ESD Rating	2000 V HBM: Validated robustness against handling-induced electrostatic discharge per JEDEC JS-001.
P_D (SC-75A)	175 mW @ T_A = 25 °C: Thermal limit defining maximum steady-state power dissipation on standard PCB layout.

Pinout & Package

SI1013R-T1-GE3 uses the SC-75A (SOT-416) surface-mount package: 1.575 mm × 1.60 mm × 0.80 mm body, 3-terminal leadframe with gull-wing leads, marked "D" on top surface. Designed for reflow soldering on FR4 boards with recommended pad dimensions per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for high-side switch	Connected to positive rail; must be routed with low-inductance trace to minimize shoot-through risk during switching.
2 (Drain)	Switched output node	Delivers load current to downstream circuitry; requires thermal relief if connected to large copper pour.
3 (Gate)	Control input	Accepts −1.8 V to −4.5 V logic signals; gate resistor selection balances switching speed vs. ringing per Q_g = 1500 pC.

Key Features

Feature	Design Value
1.8 V logic-compatible gate drive	Guaranteed turn-on at V_GS = −1.8 V (R_DS(on) = 2.7 Ω), eliminating need for external level shifters in ultra-low-voltage MCUs.
TrenchFET® architecture	Reduces R_DS(on) by 30% versus planar P-MOSFETs at same die size, improving efficiency in compact battery-powered designs.
Integrated 2000 V HBM ESD protection	Eliminates requirement for external TVS diodes in handheld device front-end switching stages.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC, supporting environmental compliance for global consumer electronics shipments.

Applications

Smartphone Power Management	Portable Medical Sensor Module
Use Scenario: Controlling power to camera flash LED and display backlight in space-constrained smartphone mainboard. IC Role / Device Role / Timing Role: High-side load switch enabling rapid on/off sequencing synchronized with MCU GPIO pulses. Use Value: 14 ns switching speed ensures precise pulse-width control for brightness modulation; 1.2 Ω R_DS(on) minimizes voltage drop across 350 mA peak loads.	Use Scenario: Enabling/disabling disposable sensor cartridge power in handheld glucose meters and pulse oximeters. IC Role / Device Role / Timing Role: Battery-isolation switch activated only during measurement cycles to extend shelf life. Use Value: −0.45 V V_GS(th) allows direct drive from 1.8 V ARM Cortex-M0+ I/O; 2.7 Ω R_DS(on) at −1.8 V ensures <100 mV dropout at 150 mA sensor current.
Industrial Handheld Scanner	Wireless Earbud Charging Case
Use Scenario: Switching 5 V rail to laser diode driver and CMOS image sensor in rugged barcode scanners. IC Role / Device Role / Timing Role: High-reliability power gate with ESD-hardened inputs for factory-floor ESD environments. Use Value: 2000 V HBM rating prevents field failures from operator contact; SC-75A footprint fits tight 10 mm × 10 mm module area.	Use Scenario: Managing charging current path between USB-C input and Li-ion battery in compact earbud cases. IC Role / Device Role / Timing Role: Reverse-polarity protection and load switch in dual-role power path controller. Use Value: Integrated body diode provides forward conduction during battery discharge; −20 V V_DS withstands USB transient spikes up to ±15 V.

Smartphone Power Management

Portable Medical Sensor Module

Use Scenario: Controlling power to camera flash LED and display backlight in space-constrained smartphone mainboard.

IC Role / Device Role / Timing Role: High-side load switch enabling rapid on/off sequencing synchronized with MCU GPIO pulses.

Use Value: 14 ns switching speed ensures precise pulse-width control for brightness modulation; 1.2 Ω R_DS(on) minimizes voltage drop across 350 mA peak loads.

Use Scenario: Enabling/disabling disposable sensor cartridge power in handheld glucose meters and pulse oximeters.

IC Role / Device Role / Timing Role: Battery-isolation switch activated only during measurement cycles to extend shelf life.

Use Value: −0.45 V V_GS(th) allows direct drive from 1.8 V ARM Cortex-M0+ I/O; 2.7 Ω R_DS(on) at −1.8 V ensures <100 mV dropout at 150 mA sensor current.

Industrial Handheld Scanner

Wireless Earbud Charging Case

Use Scenario: Switching 5 V rail to laser diode driver and CMOS image sensor in rugged barcode scanners.

IC Role / Device Role / Timing Role: High-reliability power gate with ESD-hardened inputs for factory-floor ESD environments.

Use Value: 2000 V HBM rating prevents field failures from operator contact; SC-75A footprint fits tight 10 mm × 10 mm module area.

Use Scenario: Managing charging current path between USB-C input and Li-ion battery in compact earbud cases.

IC Role / Device Role / Timing Role: Reverse-polarity protection and load switch in dual-role power path controller.

Use Value: Integrated body diode provides forward conduction during battery discharge; −20 V V_DS withstands USB transient spikes up to ±15 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 45 mΩ @ V_GS = −4.5 V (lower on-resistance), but V_GS(th) = −1.0 V (min) - requires ≥2.5 V logic drive.	Not suitable for 1.8 V MCU interfaces; better for 3.3 V systems needing lower conduction loss.	Select DMG2305UVT-7 only when gate drive voltage ≥2.5 V and R_DS(on) reduction justifies larger SOT-523 footprint.
AO3413	R_DS(on) = 100 mΩ @ V_GS = −4.5 V, V_GS(th) = −0.7 V (min); SC-70 package (smaller than SC-75A but lower P_D).	Lower thermal margin (150 mW max) limits continuous current to −250 mA on FR4.	Choose AO3413 only for ultra-dense layouts where 0.2 mm smaller outline offsets 20% lower power handling.

Compared with DMG2305UVT-7 and AO3413, SI1013R-T1-GE3 uniquely balances 1.8 V logic compatibility, SC-75A manufacturability, and 350 mA continuous current - making it the only option validated for direct interface with 1.8 V I/O in space-constrained battery systems.

Availability

SI1013R-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, portable medical sensor modules, industrial handheld scanners, and wireless earbud charging cases requiring stable component supply across multi-year production cycles.

Supply support for SI1013R-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si1013R/X family targets ultra-low-voltage load switching in portable electronics, with design focus on 1.8 V logic compatibility, SC-75A/SOT-416 miniaturization, and robust ESD tolerance for consumer-grade assembly environments.

FAQ

What is the maximum continuous drain current for SI1013R-T1-GE3 at 85 °C ambient temperature?

The SI1013R-T1-GE3 supports −300 mA continuous drain current at T_A = 85 °C when mounted on an FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-75A package's 80 mW steady-state power dissipation capability at elevated ambient temperatures.

Does SI1013R-T1-GE3 require a gate pull-up resistor in high-side switch configurations?

No, SI1013R-T1-GE3 does not require an external gate pull-up resistor. As a P-channel MOSFET, it turns ON when gate voltage is pulled below source (typically grounded), and OFF when gate equals source potential. A gate pull-down resistor is used to ensure defined OFF state when driving from open-drain or high-impedance sources.

Can SI1013R-T1-GE3 be used in place of SI1013X-T1-GE3?

SI1013R-T1-GE3 and SI1013X-T1-GE3 share identical electrical specifications but differ in package: SI1013R-T1-GE3 uses SC-75A (SOT-416), while SI1013X-T1-GE3 uses SC-89 (SOT-490). They are not mechanically interchangeable due to different footprints, land patterns, and thermal characteristics - SC-89 offers higher P_D (250 mW vs. 150 mW).

What is the typical gate threshold voltage of SI1013R-T1-GE3 and how does it affect 1.8 V logic compatibility?

The SI1013R-T1-GE3 has a typical V_GS(th) of −0.8 V and minimum of −0.45 V, ensuring strong enhancement with −1.8 V gate drive. At V_GS = −1.8 V, R_DS(on) is guaranteed at 2.7 Ω, confirming reliable operation without level-shifting circuitry when driven directly from 1.8 V microcontrollers.

Is SI1013R-T1-GE3 suitable for reverse polarity protection in USB-powered devices?

Yes, SI1013R-T1-GE3 can implement reverse polarity protection by placing it in series with the positive input rail. Its −20 V V_DS rating withstands common USB transients, and its integrated body diode conducts normally during correct polarity. However, forward voltage drop (V_SD ≈ −1.2 V at −150 mA) must be evaluated against system voltage headroom requirements.

SI1013R-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 150mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75A

SI1013R-T1-GE3 FAQ

1.How can I place an order for SI1013R-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1013R-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1013R-T1-GE3 reliable?

The price and inventory of SI1013R-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1013R-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1013R-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1013R-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1013R-T1-GE3?

SI1013R-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1013R-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1013R-T1-GE3?

For technical support, including SI1013R-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1013R-T1-GE3 requirements.

6.How does Aetrix verify that SI1013R-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1013R-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1013R-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1013R-T1-GE3?

All SI1013R-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1013R-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1013R-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1013R-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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