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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1013X-T1-E3

Name: SI1013X-T1-E3
Brand: Vishay Siliconix
SKU: SI1013X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1013X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-89, SOT-490

Datasheet:: SI1013X-T1-E3.pdf

Description:: MOSFET P-CH 20V 350MA SC89-3

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Product details

Overview

SI1013X-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET designed for high-side load switching in ultra-low-voltage systems. It delivers 1.2 Ω R_DS(on) at V_GS = −4.5 V, −0.8 V typical gate threshold, and 2000 V HBM ESD rating in SC-89 (SOT-490) package - enabling reliable battery-powered lamp and relay control.

For engineers reviewing the SI1013X-T1-E3 datasheet, SI1013X-T1-E3 pinout, SI1013X-T1-E3 application, or SI1013X-T1-E3 equivalent, key selection criteria include low-voltage gate drive compatibility (1.8 V operation), fast 14 ns turn-on delay, and thermal performance under pulsed 1000 mA drain current in compact surface-mount SC-89 footprint.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with trench-gate structure optimized for low R_DS(on) and low gate charge (Q_g = 1500 pC). Its negative V_GS(th) (−0.45 V min) enables robust turn-on from 1.8 V logic rails while maintaining tight leakage control (I_DSS ≤ −100 nA at −16 V).

The integrated body diode supports reverse-current conduction in load-switching topologies, with V_SD = −0.8 to −1.2 V at −150 mA. Thermal design relies on SC-89's 250 mW steady-state power dissipation at 25 °C ambient and normalized junction-to-foot thermal impedance of ~120 °C/W at 10 ms pulse.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V maximum - supports load switching up to 16 V DC without breakdown
R_DS(on)	1.2 Ω at V_GS = −4.5 V - ensures <170 mW conduction loss at 350 mA continuous load
I_D (continuous)	−350 mA at T_A = 25 °C - suitable for driving solenoids, LEDs, and small relays
V_GS(th)	−0.45 V (min), −0.8 V (typ.) - guarantees turn-on with 1.8 V microcontroller GPIO
Q_g	1500 pC - enables fast 14 ns turn-on delay with 10 Ω gate resistor
ESD Rating	2000 V HBM - protects against handling damage in automated assembly
P_D (SC-89)	250 mW at T_A = 25 °C - requires thermal relief pads per AN826 for sustained operation

Pinout & Package

SI1013X-T1-E3 uses the SC-89 (SOT-490) 3-lead surface-mount package, measuring 1.575 mm × 1.60 mm × 0.70 mm (L × W × H), with gull-wing leads and marking code "B".

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system ground or positive rail return; ties to internal body diode anode
2 (Gate)	Control terminal for channel inversion	Driven low relative to source to turn on; 10 kΩ pull-up recommended for default-off safety
3 (Drain)	Load connection point	Switches high-side loads between V_IN and load; handles −1000 mA pulsed current

Key Features

Feature	Design Value
1.8 V gate drive capability	Enables direct interface with low-voltage MCUs (e.g., ARM Cortex-M0+) without level shifters
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar P-MOSFETs at same die size, improving efficiency in space-constrained designs
Integrated 2000 V HBM ESD protection	Eliminates need for external TVS diodes in handheld device front-end switching stages
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and medical products

Applications

LED Backlight Control	Smartphone Power Switching
Use Scenario: Controlling LCD backlight brightness in portable devices using PWM-driven high-side switch. IC Role / Device Role / Timing Role: P-channel MOSFET acting as high-side current switch; modulated at 1–10 kHz to avoid audible noise. Use Value: 1.2 Ω R_DS(on) limits voltage drop to <420 mV at 350 mA, preserving display contrast and battery runtime.	Use Scenario: Enabling/disabling peripheral rails (e.g., camera module, SIM card) during sleep/wake cycles. IC Role / Device Role / Timing Role: Load switch controlled by baseband processor GPIO; must respond within 20 ns to meet power-state timing budgets. Use Value: 14 ns t_d(on) and 11 ns t_f ensure sub-50 ns total switching window, minimizing wake-up latency.
Industrial Sensor Power Gating	Low-Voltage Relay Driver
Use Scenario: Powering analog sensor circuits only during measurement intervals to reduce system quiescent current. IC Role / Device Role / Timing Role: High-side switch isolating 3.3 V sensor supply; driven by microcontroller with 1.8 V output. Use Value: −0.8 V typical V_GS(th) ensures full enhancement at 1.8 V drive, eliminating false turn-off due to margin loss.	Use Scenario: Driving 5 V/100 mA electromagnetic relays from battery-backed microcontrollers in metering equipment. IC Role / Device Role / Timing Role: Interface MOSFET buffering MCU output; sustains 300 mA continuous current with minimal self-heating. Use Value: 250 mW P_D rating at 25 °C allows 300 mA relay coil drive with <10 °C junction rise on FR4 board per AN826 layout.

LED Backlight Control

Smartphone Power Switching

Use Scenario: Controlling LCD backlight brightness in portable devices using PWM-driven high-side switch.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as high-side current switch; modulated at 1–10 kHz to avoid audible noise.

Use Value: 1.2 Ω R_DS(on) limits voltage drop to <420 mV at 350 mA, preserving display contrast and battery runtime.

Use Scenario: Enabling/disabling peripheral rails (e.g., camera module, SIM card) during sleep/wake cycles.

IC Role / Device Role / Timing Role: Load switch controlled by baseband processor GPIO; must respond within 20 ns to meet power-state timing budgets.

Use Value: 14 ns t_d(on) and 11 ns t_f ensure sub-50 ns total switching window, minimizing wake-up latency.

Industrial Sensor Power Gating

Low-Voltage Relay Driver

Use Scenario: Powering analog sensor circuits only during measurement intervals to reduce system quiescent current.

IC Role / Device Role / Timing Role: High-side switch isolating 3.3 V sensor supply; driven by microcontroller with 1.8 V output.

Use Value: −0.8 V typical V_GS(th) ensures full enhancement at 1.8 V drive, eliminating false turn-off due to margin loss.

Use Scenario: Driving 5 V/100 mA electromagnetic relays from battery-backed microcontrollers in metering equipment.

IC Role / Device Role / Timing Role: Interface MOSFET buffering MCU output; sustains 300 mA continuous current with minimal self-heating.

Use Value: 250 mW P_D rating at 25 °C allows 300 mA relay coil drive with <10 °C junction rise on FR4 board per AN826 layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1023X-T1-GE3	−30 V V_DS, 2.5 Ω R_DS(on) at −2.5 V, SC-89 package	Higher voltage rating but higher on-resistance at low V_GS; better for 24 V industrial loads	Select when system rail exceeds 20 V or higher blocking voltage is required
DMN2023LFG-7	−20 V V_DS, 1.4 Ω R_DS(on) at −4.5 V, SOT-323 package	Same voltage rating but larger SOT-323 footprint and no 1.8 V drive guarantee	Choose if SC-89 footprint unavailable and 2.5 V minimum gate drive acceptable

Compared with SI1013X-T1-E3, Si1023X-T1-GE3 trades lower R_DS(on) for extended voltage range, while DMN2023LFG-7 offers similar performance in a less space-efficient package without guaranteed 1.8 V operation - making SI1013X-T1-E3 optimal for miniaturized, battery-critical 1.8–3.3 V systems.

Availability

SI1013X-T1-E3 is available at Aetrix Electronics and suitable for LED backlight control, smartphone power switching, and industrial sensor power gating requiring stable component supply across consumer, medical, and industrial production programs.

Supply support for SI1013X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1013X series belongs to Vishay's low-voltage TrenchFET® portfolio, engineered specifically for high-side switching in space-constrained, battery-operated devices where 1.8 V logic compatibility and minimal conduction loss are critical.

FAQ

What is the maximum continuous drain current for SI1013X-T1-E3 at 85 °C ambient?

The SI1013X-T1-E3 supports −275 mA continuous drain current at T_A = 85 °C in SC-89 package, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the 140 mW power dissipation capability at elevated ambient temperature and must be validated with actual PCB copper area per Vishay Application Note 826.

Does SI1013X-T1-E3 require a gate pull-up resistor in high-side switch configurations?

Yes, SI1013X-T1-E3 requires an external gate pull-up resistor (typically 10 kΩ to V_SOURCE) to ensure default-OFF behavior when the driving GPIO is high-impedance or unpowered. The device has no internal pull-up, and absence of this resistor may cause unintended turn-on due to floating gate voltage.

Can SI1013X-T1-E3 be used with 1.8 V microcontroller GPIO without level shifting?

Yes, SI1013X-T1-E3 is explicitly characterized for 1.8 V operation with −0.8 V typical gate threshold voltage and guaranteed turn-on at V_GS = −1.8 V. It achieves 2.7 Ω R_DS(on) at −150 mA under this condition, making it suitable for direct interface with 1.8 V logic outputs.

What is the thermal resistance junction-to-ambient for SI1013X-T1-E3 in standard FR4 layout?

The SI1013X-T1-E3 exhibits 833 °C/W junction-to-ambient thermal resistance (R_θJA) when mounted on standard FR4 board per Vishay's test conditions. This value assumes minimal copper pour; adding thermal relief pads per Application Note 826 reduces R_θJA to ~400 °C/W, significantly improving power handling.

Is SI1013X-T1-E3 halogen-free and RoHS compliant?

Yes, SI1013X-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC. This is confirmed in the official Vishay datasheet (Document Number: 71167, Rev. D), and the "-E3" suffix denotes lead-free and halogen-free construction.

SI1013X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-89, SOT-490

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 250mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89-3

SI1013X-T1-E3 FAQ

1.How can I place an order for SI1013X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1013X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1013X-T1-E3 reliable?

The price and inventory of SI1013X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1013X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1013X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1013X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1013X-T1-E3?

SI1013X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1013X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1013X-T1-E3?

For technical support, including SI1013X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1013X-T1-E3 requirements.

6.How does Aetrix verify that SI1013X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1013X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1013X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1013X-T1-E3?

All SI1013X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1013X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1013X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1013X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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