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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1013X-T1-GE3

Name: SI1013X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1013X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1013X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-89, SOT-490

Datasheet:: SI1013X-T1-GE3.pdf

Description:: MOSFET P-CH 20V 350MA SC89-3

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Product details

Overview

SI1013X-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for high-side load switching in low-voltage battery-powered systems, featuring 1.2 Ω R_DS(on) at V_GS = −4.5 V, −20 V V_DS, and 1.8 V logic-compatible gate threshold (0.8 V typ.), with SC-89 (SOT-490) packaging for space-constrained portable electronics.

For engineers reviewing the SI1013X-T1-GE3 datasheet, SI1013X-T1-GE3 pinout, SI1013X-T1-GE3 application, or SI1013X-T1-GE3 equivalent, key selection criteria include verified 1.8 V operation capability, SC-89 thermal performance (250 mW at T_A = 25 °C), ESD robustness (2000 V HBM), and confirmed high-side switching suitability per Vishay's official application guidance.

Technical Context

This device implements a single P-channel enhancement-mode MOSFET using Vishay's TrenchFET® process, enabling stable conduction at gate voltages as low as −1.8 V while maintaining sub-2.7 Ω on-resistance under that condition. Its −20 V drain-source rating and ±6 V gate-source voltage limit support reliable operation in 3.3 V and lower supply rails.

The SC-89 package provides defined thermal resistance (junction-to-ambient ≈ 500 °C/W per normalized transient curves), and integrated body diode enables bidirectional current handling in load-switch configurations - critical for reverse-polarity protection and inductive load freewheeling in portable power management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum reverse-biased drain-source voltage before breakdown; defines safe operating range in high-side switch topologies.
R_DS(on)	1.2 Ω @ V_GS = −4.5 V: Low conduction loss at standard logic levels; enables <100 mW I²R loss at 350 mA load current.
V_GS(th)	−0.45 V (min), −0.8 V (typ): Ensures turn-on with 1.8 V microcontroller GPIO; eliminates need for level-shifting circuitry.
I_D (cont)	−350 mA @ T_A = 25 °C: Continuous drain current rating under FR4 board conditions; validated for sustained battery-load switching.
Q_g	1500 pC: Total gate charge determines drive strength requirement; compatible with low-power MCU outputs without external buffer.
ESD Rating	2000 V HBM: Robust electrostatic discharge immunity supports direct handling in handheld assembly environments.
P_D (SC-89)	250 mW @ T_A = 85 °C: Thermal derating confirms usable power delivery in compact enclosures with moderate airflow.

Pinout & Package

SI1013X-T1-GE3 is housed in the SC-89 (SOT-490) surface-mount package - a 3-lead, lead (Pb)-free and halogen-free plastic package measuring 1.575 mm × 1.60 mm × 0.70 mm (L × W × H), with gull-wing leads and marked "B" on top surface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system V_IN rail in high-side configuration; carries full load current and must be routed with low-inductance copper.
2 (Gate)	Control terminal for channel modulation	Driven by logic-level signal; requires no external pull-up due to depletion-free enhancement mode; gate capacitance (Q_gs = 150 pC) enables fast edge rates.
3 (Drain)	Load connection node	Connects to load (e.g., LED, relay coil); body diode anode faces source, supporting reverse-current protection when drain is grounded.

Key Features

Feature	Design Value
1.8 V Gate Drive Compatibility	Operates fully with 1.8 V microcontroller I/O - eliminates level shifters and reduces BOM count in ultra-low-power designs.
TrenchFET® Process Technology	Delivers 30 % lower R_DS(on) vs. planar P-MOSFETs at same die size, improving efficiency in space-limited battery applications.
Integrated 2000 V HBM ESD Protection	Withstands human-body-model discharges without external TVS - simplifies ESD design for consumer wearables and handhelds.
Halogen-Free & RoHS-Compliant Construction	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports global environmental compliance without performance trade-offs.

Applications

Smartphone Power Management	Wearable Sensor Module
Use Scenario: High-side switching of display backlight and camera flash in 1.8 V–3.3 V smartphone platforms. IC Role / Device Role: Load switch controlling current flow from battery to pulsed loads with minimal voltage drop. Use Value: 1.2 Ω R_DS(on) limits voltage sag to <420 mV at 350 mA, preserving display brightness and flash intensity.	Use Scenario: Enabling/disabling MEMS sensors and Bluetooth LE radios in fitness trackers during sleep mode. IC Role / Device Role: Low-quiescent-current power gate isolating subsystems to extend battery life. Use Value: Sub-1 µA IDSS leakage at 16 V ensures <1 µA standby drain - critical for multi-week wearable runtime.
Industrial Handheld Terminal	Medical Point-of-Care Device
Use Scenario: Driving solenoid-based barcode scanner actuators powered from single-cell Li-ion (2.7–4.2 V). IC Role / Device Role: High-side driver interfacing MCU GPIO directly to inductive load. Use Value: Fast 14 ns switching and integrated body diode suppress back-EMF spikes without external flyback diode.	Use Scenario: Controlling LED status indicators and buzzer alerts in battery-powered glucose meters. IC Role / Device Role: Precision load switch ensuring consistent optical output and audible feedback across battery discharge curve. Use Value: Stable 0.8 V typical V_GS(th) guarantees turn-on down to 1.8 V battery voltage - avoids false-off states.

Smartphone Power Management

Wearable Sensor Module

Use Scenario: High-side switching of display backlight and camera flash in 1.8 V–3.3 V smartphone platforms.

IC Role / Device Role: Load switch controlling current flow from battery to pulsed loads with minimal voltage drop.

Use Value: 1.2 Ω R_DS(on) limits voltage sag to <420 mV at 350 mA, preserving display brightness and flash intensity.

Use Scenario: Enabling/disabling MEMS sensors and Bluetooth LE radios in fitness trackers during sleep mode.

IC Role / Device Role: Low-quiescent-current power gate isolating subsystems to extend battery life.

Use Value: Sub-1 µA IDSS leakage at 16 V ensures <1 µA standby drain - critical for multi-week wearable runtime.

Industrial Handheld Terminal

Medical Point-of-Care Device

Use Scenario: Driving solenoid-based barcode scanner actuators powered from single-cell Li-ion (2.7–4.2 V).

IC Role / Device Role: High-side driver interfacing MCU GPIO directly to inductive load.

Use Value: Fast 14 ns switching and integrated body diode suppress back-EMF spikes without external flyback diode.

Use Scenario: Controlling LED status indicators and buzzer alerts in battery-powered glucose meters.

IC Role / Device Role: Precision load switch ensuring consistent optical output and audible feedback across battery discharge curve.

Use Value: Stable 0.8 V typical V_GS(th) guarantees turn-on down to 1.8 V battery voltage - avoids false-off states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1023X-T1-GE3	−30 V V_DS, 2.2 Ω R_DS(on) @ −4.5 V, SC-89 package	Higher voltage margin but higher on-resistance; suited for 5 V rail systems where 20 V rating is insufficient	Select when system V_IN exceeds 4.5 V and higher blocking voltage is required.
DMN2013LFG-7	−20 V V_DS, 1.1 Ω R_DS(on) @ −4.5 V, SOT-323 package (smaller footprint, lower thermal mass)	Same voltage rating and comparable R_DS(on), but SOT-323 limits power dissipation to 150 mW - unsuitable for >250 mA continuous loads	Select only for ultra-compact layouts where load current stays below 200 mA and thermal budget allows.

Compared with Si1023X-T1-GE3 and DMN2013LFG-7, SI1013X-T1-GE3 uniquely balances 1.8 V drive compatibility, 250 mW SC-89 thermal capability, and 1.2 Ω conduction loss - making it optimal for 1.8–3.3 V battery-powered high-side switches requiring both efficiency and reliability.

Availability

SI1013X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor modules, and industrial handheld terminals requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SI1013X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, reliability, and miniaturization.

The Si1013X series belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered specifically for high-side load switching in space- and power-constrained portable electronics operating at 1.8 V to 3.3 V.

FAQ

What is the maximum continuous drain current for SI1013X-T1-GE3 at 85 °C ambient temperature?

The SI1013X-T1-GE3 supports −275 mA continuous drain current at T_A = 85 °C when mounted on an FR4 board, as specified in the Absolute Maximum Ratings table. This derated value accounts for thermal limitations of the SC-89 package and ensures junction temperature remains within the −55 °C to 150 °C operational range without exceeding 150 °C.

Does SI1013X-T1-GE3 require a gate pull-up resistor in high-side switch configurations?

No, SI1013X-T1-GE3 does not require an external gate pull-up resistor. As an enhancement-mode P-channel MOSFET, it remains off when the gate is floating or at the same potential as the source. In practice, a pull-down resistor (e.g., 100 kΩ) is recommended to ensure defined off-state during MCU reset or power-up, but no pull-up is needed for functional operation of SI1013X-T1-GE3.

Can SI1013X-T1-GE3 be used for reverse polarity protection in a 3.3 V system?

Yes, SI1013X-T1-GE3 is suitable for reverse polarity protection in 3.3 V systems. With its −20 V V_DS rating and low 1.2 Ω R_DS(on) at −4.5 V gate drive, it introduces minimal forward voltage drop (<420 mV at 350 mA) while blocking reverse current. The body diode orientation (anode at source) enables correct placement between input and load, making SI1013X-T1-GE3 a proven solution in Vishay reference designs for this function.

What is the gate threshold voltage range for SI1013X-T1-GE3, and how does it affect 1.8 V MCU compatibility?

The SI1013X-T1-GE3 has a gate threshold voltage V_GS(th) of −0.45 V (min) to −0.8 V (typ), measured at I_D = −250 µA. This ensures reliable turn-on with 1.8 V logic outputs - since the gate-source voltage reaches −1.8 V when the gate is pulled low and source is at 1.8 V, well above the threshold. Thus, SI1013X-T1-GE3 achieves full enhancement without gate boosting, unlike higher-threshold P-MOSFETs.

Is SI1013X-T1-GE3 pin-compatible with SI1013R-T1-GE3?

No, SI1013X-T1-GE3 is not pin-compatible with SI1013R-T1-GE3. While both share identical electrical specifications and belong to the same Si1013R/X family, SI1013X-T1-GE3 uses the SC-89 (SOT-490) package with marking code "B", whereas SI1013R-T1-GE3 uses SC-75A (SOT-416) with marking code "D". Their land patterns, lead pitch (0.95 mm vs. 0.90 mm), and thermal pad layout differ - PCB redesign is required to substitute SI1013X-T1-GE3 for SI1013R-T1-GE3.

SI1013X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-89, SOT-490

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 250mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89-3

SI1013X-T1-GE3 FAQ

1.How can I place an order for SI1013X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1013X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1013X-T1-GE3 reliable?

The price and inventory of SI1013X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1013X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1013X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1013X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1013X-T1-GE3?

SI1013X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1013X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1013X-T1-GE3?

For technical support, including SI1013X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1013X-T1-GE3 requirements.

6.How does Aetrix verify that SI1013X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1013X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1013X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1013X-T1-GE3?

All SI1013X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1013X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1013X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1013X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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