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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Vishay Siliconix SI1016CX-T1-GE3

Name: SI1016CX-T1-GE3
Brand: Vishay Siliconix
SKU: SI1016CX-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1016CX-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FET, MOSFET Arrays

Package:: SOT-563, SOT-666

Datasheet:: SI1016CX-T1-GE3.pdf

Description:: MOSFET N/P-CH 20V SC89

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Product details

Overview

SI1016CX-T1-GE3 from Vishay Siliconix is a complementary N- and P-channel 20 V TrenchFET® power MOSFET pair in a single SC-89 (SOT-563F) package, rated for ±0.6 A continuous drain current at 25 °C, with R_DS(on) as low as 0.330 Ω (N-ch, V_GS = 4.5 V) and 0.630 Ω (P-ch, V_GS = −4.5 V), used in high-side load switching and level-shift applications in portable battery-powered systems.

For engineers reviewing the SI1016CX-T1-GE3 datasheet, SI1016CX-T1-GE3 pinout, SI1016CX-T1-GE3 application, or SI1016CX-T1-GE3 equivalent, key selection considerations include dual-channel complementary operation, low-voltage gate drive compatibility down to 1.5 V, thermal resistance of 560 °C/W (steady-state), and verified ESD robustness (900 V HBM per channel).

Technical Context

This device integrates matched N- and P-channel enhancement-mode MOSFETs on a single die substrate, enabling bidirectional level shifting and complementary switching without external bias networks. Its trench-based silicon architecture delivers low gate charge (Q_g = 1.3 nC typical N-ch / 1.65 nC typical P-ch at 4.5 V) and fast switching (t_d(on) = 2 ns N-ch / 1 ns P-ch with 8 V drive).

The SC-89 dual-channel layout supports independent control of both FETs, with separate source, gate, and drain terminals for each channel. Body diode characteristics are specified (V_SD = 0.85 V N-ch / −0.87 V P-ch at I_S = 0.5 A), and thermal performance is validated under surface-mount conditions on 1" × 1" FR4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	±20 V - Supports rail-to-rail switching across 20 V supply domains without breakdown risk.
R_DS(on) (N-ch)	0.330 Ω @ V_GS = 4.5 V - Enables ≤165 mW conduction loss at 0.5 A, critical for thermally constrained portable designs.
R_DS(on) (P-ch)	0.630 Ω @ V_GS = −4.5 V - Allows efficient high-side P-ch switching with minimal voltage drop in reverse-polarity protection circuits.
Q_g	1.3 nC (N-ch) / 1.65 nC (P-ch) @ 4.5 V - Reduces gate driver power demand and enables >1 MHz switching in compact DC-DC or load-switching topologies.
T_J Range	−55 to +150 °C - Qualified for extended industrial temperature operation without derating in sealed enclosures.
R_thJA	560 °C/W (steady-state) - Requires minimal PCB copper area for thermal management in space-constrained layouts.
ESD (HBM)	900 V per channel - Eliminates need for external ESD protection in handheld interface and battery-input stages.

Pinout & Package

SC-89 (SOT-563F) 6-lead surface-mount package: 1.60 mm × 1.60 mm × 0.58 mm body, 0.50 mm pitch, lead-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (S1)	N-channel source	Common reference node for N-FET; tied to ground or low-side return path in half-bridge configurations.
2 (G1)	N-channel gate	Control input for N-FET; compatible with 1.5–8 V logic-level drive without level-shifting circuitry.
3 (D1)	N-channel drain	Switched output node for N-FET; connects to load or power rail in low-side switching applications.
4 (D2)	P-channel drain	Switched output node for P-FET; used for high-side connection to positive supply in load-switch or reverse-polarity protection.
5 (G2)	P-channel gate	Control input for P-FET; driven low relative to source to turn on; supports direct microcontroller GPIO control.
6 (S2)	P-channel source	Common reference node for P-FET; typically connected to V_IN in high-side switch implementations.

Key Features

Feature	Design Value
Complementary N/P-channel pairing	Enables single-package implementation of bidirectional switches, level shifters, and H-bridge half-cells without discrete matching.
TrenchFET® technology	Delivers lower R_DS(on) and Q_g than planar MOSFETs at same voltage rating, improving efficiency in battery-operated systems.
Low-voltage gate drive support	Guaranteed turn-on at V_GS = 1.5 V (N-ch) and V_GS = −1.5 V (P-ch), enabling direct interface with 1.8 V/2.5 V logic and ultra-low-power MCUs.
100 % R_g tested	Ensures consistent gate resistance (2.4–24.4 Ω) across production lots, critical for predictable switching timing and EMI control.
High-speed switching capability	Sub-10 ns rise/fall times (at 8 V drive) support clean digital signal routing and fast load enable/disable transitions.

Applications

Battery Load Switching	Level-Shifting Interface
Use Scenario: Enabling/disabling power to Bluetooth modules or sensors in wearables during sleep mode to extend battery life. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as controlled series pass element, with N-ch handling ground-return path and P-ch managing V_BAT feed. Use Value: Achieves <1 μA shutdown leakage (IDSS ≤ 1 μA) and <100 ns enable response time, minimizing quiescent loss and wake-up latency.	Use Scenario: Translating 1.8 V GPIO signals from an MCU to control 3.3 V peripherals in mixed-voltage IoT edge nodes. IC Role / Device Role / Timing Role: Functions as a passive bidirectional level shifter using complementary FET conduction paths, eliminating active translators or pull-up resistors. Use Value: Supports >10 MHz data rates with <20 ns propagation delay and no static current draw, reducing BOM count and power overhead.
Reverse Polarity Protection	Small-Signal Signal Routing
Use Scenario: Preventing damage from incorrect battery insertion in medical handheld devices with replaceable Li-ion cells. IC Role / Device Role / Timing Role: P-channel MOSFET operates as ideal diode in series with input, while N-channel provides gate control and status feedback path. Use Value: Delivers <80 mV forward drop at 350 mA (vs. 300+ mV for Schottky), reducing heat generation and voltage sag during peak current events.	Use Scenario: Isolating analog sensor outputs from noisy digital sections in automotive cabin controllers. IC Role / Device Role / Timing Role: Used as a low-leakage analog switch with <1 nA IGSS, routing signals only when enabled by system controller. Use Value: Maintains <0.1 % gain error over temperature due to stable R_DS(on) (±10 % variation from −55 to +125 °C), preserving measurement accuracy.

Battery Load Switching

Level-Shifting Interface

Use Scenario: Enabling/disabling power to Bluetooth modules or sensors in wearables during sleep mode to extend battery life.

IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as controlled series pass element, with N-ch handling ground-return path and P-ch managing V_BAT feed.

Use Value: Achieves <1 μA shutdown leakage (IDSS ≤ 1 μA) and <100 ns enable response time, minimizing quiescent loss and wake-up latency.

Use Scenario: Translating 1.8 V GPIO signals from an MCU to control 3.3 V peripherals in mixed-voltage IoT edge nodes.

IC Role / Device Role / Timing Role: Functions as a passive bidirectional level shifter using complementary FET conduction paths, eliminating active translators or pull-up resistors.

Use Value: Supports >10 MHz data rates with <20 ns propagation delay and no static current draw, reducing BOM count and power overhead.

Reverse Polarity Protection

Small-Signal Signal Routing

Use Scenario: Preventing damage from incorrect battery insertion in medical handheld devices with replaceable Li-ion cells.

IC Role / Device Role / Timing Role: P-channel MOSFET operates as ideal diode in series with input, while N-channel provides gate control and status feedback path.

Use Value: Delivers <80 mV forward drop at 350 mA (vs. 300+ mV for Schottky), reducing heat generation and voltage sag during peak current events.

Use Scenario: Isolating analog sensor outputs from noisy digital sections in automotive cabin controllers.

IC Role / Device Role / Timing Role: Used as a low-leakage analog switch with <1 nA IGSS, routing signals only when enabled by system controller.

Use Value: Maintains <0.1 % gain error over temperature due to stable R_DS(on) (±10 % variation from −55 to +125 °C), preserving measurement accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1027X-T1-GE3	Higher V_DS (±30 V), higher R_DS(on) (0.55 Ω N-ch / 1.05 Ω P-ch @ 4.5 V), larger Q_g (2.2 nC / 2.8 nC)	Better suited for 24 V industrial inputs; less optimal for sub-20 V battery rails due to higher conduction loss	Select when system requires wider voltage margin and can accommodate higher thermal load.
DMC2038LVT-7	Lower V_DS (±20 V), tighter R_DS(on) tolerance (0.29 Ω N-ch / 0.58 Ω P-ch), but higher Q_g (1.8 nC / 2.5 nC)	Improved conduction efficiency at 0.5 A, but slower switching and higher gate drive demand than SI1016CX-T1-GE3	Prefer when minimizing I²R loss dominates over switching speed, e.g., always-on battery monitoring circuits.

Compared with Si1027X-T1-GE3 and DMC2038LVT-7, SI1016CX-T1-GE3 offers the best balance of low-voltage drive capability, fast switching, and thermal efficiency in 20 V portable applications-making it optimal for space- and power-constrained designs where gate drive simplicity and dynamic response are prioritized.

Availability

SI1016CX-T1-GE3 is available at Aetrix Electronics and suitable for battery load switching, level-shifting interfaces, reverse polarity protection, and small-signal routing requiring stable component supply and long-term manufacturability.

Supply support for SI1016CX-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The Si1016CX product line targets ultra-compact, low-power switching applications in portable and wearable electronics, delivering integrated complementary FET functionality in miniature SC-89 packaging.

FAQ

What is the maximum continuous drain current rating for SI1016CX-T1-GE3 at 70 °C ambient temperature?

The SI1016CX-T1-GE3 is rated for 0.49 A continuous drain current for both N-channel and P-channel devices at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow. The SI1016CX-T1-GE3 maintains this rating across its full operating junction temperature range up to 150 °C.

Does SI1016CX-T1-GE3 support 1.8 V logic-level gate drive for both channels?

Yes, SI1016CX-T1-GE3 supports reliable turn-on at V_GS = 1.8 V for the N-channel (R_DS(on) = 0.546 Ω at I_D = 0.2 A) and V_GS = −1.8 V for the P-channel (R_DS(on) = 1.440 Ω at I_D = −0.1 A). These values are guaranteed in the datasheet's Specifications table, confirming compatibility with 1.8 V microcontrollers without external level-shifting circuitry. The SI1016CX-T1-GE3 achieves this via optimized threshold voltage distribution (V_GS(th) = 0.4–1.0 V N-ch / −0.4 to −1.0 V P-ch).

Can SI1016CX-T1-GE3 be used in reverse polarity protection circuits without additional components?

Yes, SI1016CX-T1-GE3 can implement reverse polarity protection using only the P-channel MOSFET (pins 4, 5, 6), with the N-channel left unconnected or used for status monitoring. When configured with source tied to input V_IN, drain to load, and gate grounded, the P-FET conducts normally but blocks reverse current due to body diode orientation. The SI1016CX-T1-GE3's −20 V V_DS rating and low R_DS(on) ensure robust protection at up to 350 mA with minimal voltage drop. No external diodes or controllers are required.

What is the thermal resistance junction-to-ambient (R_thJA) for SI1016CX-T1-GE3 under steady-state conditions?

The SI1016CX-T1-GE3 has a steady-state junction-to-ambience thermal resistance of 560 °C/W, measured on a 1" × 1" FR4 board per the datasheet's Thermal Resistance Ratings table. This value applies to both N- and P-channel devices and assumes standard surface-mount assembly. For designs requiring higher power handling, the SI1016CX-T1-GE3 benefits from thermal vias under the exposed pad (if present in variant) or increased copper pour-though the base R_thJA already enables 220 mW dissipation at ΔT = 123 °C above ambient.

Is SI1016CX-T1-GE3 qualified for automotive applications?

No, SI1016CX-T1-GE3 is not AEC-Q101 qualified and is intended for industrial and consumer applications only. While it operates across −55 to +150 °C and meets JEDEC moisture sensitivity level 1 (MSL1), Vishay does not list it in automotive-grade product families. For automotive use cases requiring similar functionality, designers should select AEC-Q101-compliant alternatives such as the SQ2342EV or SI1062X-T1-GE3. The SI1016CX-T1-GE3 remains suitable for non-safety-critical portable and industrial equipment.

SI1016CX-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: -

Rds On (Max) @ Id, Vgs:: 396mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 43pF @ 10V

Power - Max:: 220mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1016CX-T1-GE3 FAQ

1.How can I place an order for SI1016CX-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1016CX-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1016CX-T1-GE3 reliable?

The price and inventory of SI1016CX-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1016CX-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1016CX-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1016CX-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1016CX-T1-GE3?

SI1016CX-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1016CX-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1016CX-T1-GE3?

For technical support, including SI1016CX-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1016CX-T1-GE3 requirements.

6.How does Aetrix verify that SI1016CX-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1016CX-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1016CX-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1016CX-T1-GE3?

All SI1016CX-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1016CX-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1016CX-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1016CX-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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