Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1022R-T1-E3

Name: SI1022R-T1-E3
Brand: Vishay Siliconix
SKU: SI1022R-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI1022R-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: SI1022R-T1-E3.pdf

Description:: MOSFET N-CH 60V 330MA SC75A

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI1022R-T1-E3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Power MOSFET in SC-75A (SOT-416) package, delivering R_DS(on) = 1.25 Ω at V_GS = 10 V, V_GS(th) = 1–2.5 V, and fast switching with t_on = 25 ns - used for low-voltage load switching in battery-powered relays and solid-state relays.

For engineers reviewing the SI1022R-T1-E3 datasheet, SI1022R-T1-E3 pinout, SI1022R-T1-E3 application, or SI1022R-T1-E3 equivalent, key selection criteria include low-threshold gate drive compatibility with 3.3 V microcontrollers, miniature footprint for space-constrained PCBs, and verified ESD robustness (2000 V HBM).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching while maintaining stable threshold voltage across temperature (±0.4 V variation from –55 °C to 125 °C). Its 30 pF input capacitance and 0.6 nC total gate charge enable efficient driving from low-power GPIOs.

The device operates as a single-ended, low-side switch with integrated body diode (V_SD = 1.3 V at I_S = 200 mA), rated for continuous drain current up to 330 mA at 25 °C and 240 mA at 85 °C - thermal performance governed by R_thJA = 500 °C/W on FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS (min)	60 V - supports operation in 24 V industrial control and 36 V battery systems with margin.
R_DS(on)	1.25 Ω at V_GS = 10 V - limits conduction loss to ≤31 mW at 200 mA DC load.
V_GS(th)	1–2.5 V - ensures reliable turn-on with 3.3 V logic-level drivers without level-shifting.
C_iss	30 pF - reduces gate drive power and enables >1 MHz switching in low-power PWM circuits.
t_on/t_off	25 ns / 35 ns - supports high-speed digital load control with minimal transition losses.
P_D (max)	250 mW at T_A = 25 °C - defines maximum steady-state power in unheatsinked surface-mount layout.
I_D (cont)	330 mA at T_A = 25 °C - suitable for driving solenoids, LED arrays, or small relays.

Pinout & Package

SC-75A (SOT-416) is a 3-lead, surface-mount plastic package measuring 1.575 mm × 1.60 mm × 0.70 mm (L × W × H), optimized for automated placement and reflow soldering on FR4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting logic-level voltage; requires <0.6 nC charge for full enhancement.
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side configuration.
3 (D)	Drain	High-side load connection point; carries switched current and withstands up to 60 V transient spikes.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 1.25 Ω R_DS(on) in SC-75A - 40% lower on-resistance than planar MOSFETs of same size.
Low V_GS(th) range (1–2.5 V)	Guarantees turn-on with 3.3 V MCU outputs, eliminating need for external gate drivers in portable designs.
ESD rating: 2000 V HBM	Permits direct handling and board assembly without special ESD controls during manufacturing.
Halogen-free & RoHS-compliant	Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC requirements for green electronics manufacturing.
Miniature SC-75A footprint	Occupies only 2.5 mm² PCB area - ideal for wearables, hearing aids, and compact IoT sensor nodes.

Applications

Relay/Solenoid Driver	Battery-Powered Load Switch
Use Scenario: Driving 24 V DC relay coils or 12 V solenoids in industrial control panels and HVAC actuators. IC Role / Device Role / Timing Role: Low-side switching element controlled by microcontroller GPIO, handling repetitive 330 mA pulsed loads. Use Value: Low R_DS(on) minimizes self-heating during sustained coil energization; fast t_on/t_off enables precise timing of mechanical actuation.	Use Scenario: Enabling/disabling power to sensors, radios, or display segments in coin-cell or Li-ion powered devices. IC Role / Device Role / Timing Role: Load switch providing controlled power rail sequencing and leakage isolation between sleep and active states. Use Value: Sub-µA IDSS (<1 µA at VDS = 60 V) prevents battery drain during standby; low VGS(th) ensures clean turn-off at end-of-life battery voltages.
Solid-State Relay Module	LED/Lamp Driver
Use Scenario: Replacing electromechanical relays in programmable logic controllers and PLC I/O modules requiring >1 million cycles. IC Role / Device Role / Timing Role: Primary output switch in opto-isolated SSR designs, interfacing with phototriac or photodarlington drivers. Use Value: No moving parts or contact bounce; 25 ns switching supports high-frequency modulation for zero-crossing or phase-angle control.	Use Scenario: Controlling indicator LEDs, backlight segments, or incandescent lamp filaments in automotive dashboards and medical equipment. IC Role / Device Role / Timing Role: Constant-current or on/off switch for discrete lighting elements, often paired with current-limiting resistors. Use Value: Integrated body diode handles inductive kickback from lamp filaments; 1.3 V VSD enables bidirectional current limiting in shared-return configurations.

Relay/Solenoid Driver

Battery-Powered Load Switch

Use Scenario: Driving 24 V DC relay coils or 12 V solenoids in industrial control panels and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element controlled by microcontroller GPIO, handling repetitive 330 mA pulsed loads.

Use Value: Low R_DS(on) minimizes self-heating during sustained coil energization; fast t_on/t_off enables precise timing of mechanical actuation.

Use Scenario: Enabling/disabling power to sensors, radios, or display segments in coin-cell or Li-ion powered devices.

IC Role / Device Role / Timing Role: Load switch providing controlled power rail sequencing and leakage isolation between sleep and active states.

Use Value: Sub-µA IDSS (<1 µA at VDS = 60 V) prevents battery drain during standby; low VGS(th) ensures clean turn-off at end-of-life battery voltages.

Solid-State Relay Module

LED/Lamp Driver

Use Scenario: Replacing electromechanical relays in programmable logic controllers and PLC I/O modules requiring >1 million cycles.

IC Role / Device Role / Timing Role: Primary output switch in opto-isolated SSR designs, interfacing with phototriac or photodarlington drivers.

Use Value: No moving parts or contact bounce; 25 ns switching supports high-frequency modulation for zero-crossing or phase-angle control.

Use Scenario: Controlling indicator LEDs, backlight segments, or incandescent lamp filaments in automotive dashboards and medical equipment.

IC Role / Device Role / Timing Role: Constant-current or on/off switch for discrete lighting elements, often paired with current-limiting resistors.

Use Value: Integrated body diode handles inductive kickback from lamp filaments; 1.3 V VSD enables bidirectional current limiting in shared-return configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 1.4 Ω @ V_GS = 4.5 V; higher gate charge (0.9 nC); SOT-23 package (larger footprint)	Requires stronger gate drive; less suitable for 3.3 V-only systems due to higher V_GS(th) min (1.2 V)	Prefer when higher peak current (500 mA) is needed and board space allows SOT-23.
AO3400	R_DS(on) = 0.042 Ω @ V_GS = 10 V; higher V_GS(th) (1–3 V); SO-8 package (much larger)	Not viable for space-constrained designs; over-specified for sub-500 mA loads	Select only if thermal budget permits larger package and system requires <50 mΩ on-resistance.

Compared with DMN2004LK-7 and AO3400, the SI1022R-T1-E3 uniquely balances ultra-small SC-75A size, guaranteed 3.3 V logic compatibility, and sufficient 330 mA current capacity - making it optimal for miniaturized, battery-sensitive switching where board area is premium.

Availability

SI1022R-T1-E3 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, and low-voltage relay/solenoid drivers requiring stable component supply and long-term manufacturability.

Supply support for SI1022R-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SI1022R-T1-E3 belongs to Vishay's TrenchFET® low-voltage MOSFET family, engineered specifically for space- and power-constrained portable and embedded applications demanding logic-level drive and robust thermal performance in miniature packages.

FAQ

What is the maximum continuous drain current for SI1022R-T1-E3 at 85 °C ambient?

The SI1022R-T1-E3 supports 240 mA continuous drain current at T_A = 85 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-75A package with R_thJA = 500 °C/W on standard FR4. For sustained 330 mA operation, board-level thermal relief (e.g., copper pour, airflow) is required.

Does SI1022R-T1-E3 have built-in ESD protection, and what level is certified?

Yes, the SI1022R-T1-E3 is ESD-protected to 2000 V per Human Body Model (HBM), as stated in its Features section and confirmed in the Product Summary. This rating applies to all pins and enables safe handling and assembly without additional ESD safeguards in standard production environments.

Can SI1022R-T1-E3 be driven directly by a 3.3 V microcontroller GPIO without a level shifter?

Yes, SI1022R-T1-E3 can be driven directly by a 3.3 V GPIO because its V_GS(th) range is 1–2.5 V, ensuring full enhancement at V_GS = 3.3 V. The low 0.6 nC gate charge further guarantees fast switching without excessive drive strength - verified under test conditions with V_GEN = 10 V and R_g = 10 Ω.

What is the typical reverse transfer capacitance (Crss) of SI1022R-T1-E3, and why does it matter?

The SI1022R-T1-E3 has a typical Crss of 2.5 pF at V_DS = 25 V, V_GS = 0 V, f = 1 MHz. This low value minimizes Miller effect-induced gate oscillation and improves noise immunity in high-speed switching, especially critical in densely routed PCBs with shared ground planes.

Is SI1022R-T1-E3 halogen-free and RoHS-compliant?

Yes, SI1022R-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as explicitly stated in its Features and Ordering Information sections. The "-E3" suffix denotes lead (Pb)-free and halogen-free construction, validated through Vishay's material declarations.

SI1022R-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 330mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.25Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 30 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75A

SI1022R-T1-E3 FAQ

1.How can I place an order for SI1022R-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1022R-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1022R-T1-E3 reliable?

The price and inventory of SI1022R-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1022R-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1022R-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1022R-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1022R-T1-E3?

SI1022R-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1022R-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1022R-T1-E3?

For technical support, including SI1022R-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1022R-T1-E3 requirements.

6.How does Aetrix verify that SI1022R-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1022R-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1022R-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1022R-T1-E3?

All SI1022R-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1022R-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1022R-T1-E3 part is unused and in its original packaging.

Return procedure for SI1022R-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …