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Vishay Siliconix SI1023CX-T1-GE3
- Part No.:
- SI1023CX-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
SI1023CX-T1-GE3.pdf
- Description:
- MOSFET 2P-CH 20V SC89
- Quantity:
- Payment:
- Shipping:
Inventory:50,405
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Product details
Overview
SI1023CX-T1-GE3 from Vishay Siliconix is a dual P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, with RDS(on) = 0.756 Ω at VGS = -4.5 V and ID = -0.35 A, housed in an SC-89 (SOT-563F) 6-lead surface-mount package. It serves as a compact load switch in portable battery-powered systems requiring low gate charge (1 nC typical) and fast switching.
For engineers reviewing the SI1023CX-T1-GE3 datasheet, SI1023CX-T1-GE3 pinout, SI1023CX-T1-GE3 application, or SI1023CX-T1-GE3 equivalent, key selection criteria include its dual-channel P-channel topology, -1.5 V minimum gate threshold, 1000 V HBM ESD rating, and suitability for space-constrained DC-DC load switching and display backlight control in mobile platforms.
Technical Context
This device integrates two independent P-channel MOSFETs in a single SC-89 package, sharing no internal connection between channels. Each channel features trench-gate silicon technology optimized for low RDS(on) at low gate drive voltages down to -1.5 V, enabling direct interface with 1.8 V and 2.5 V logic outputs without level shifting.
Thermal performance is defined by RthJA = 675 °C/W (steady-state, 1" × 1" FR4), supporting continuous ID = -0.35 A per channel at ambient temperatures up to 70 °C. Dynamic parameters include Ciss = 45 pF, Qg = 1.65–2.50 nC, and tf = 5–16 ns, confirming suitability for high-frequency switching below 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for battery-side high-side switching in 3.3 V/5 V systems |
| RDS(on) @ VGS = -4.5 V | 0.756 Ω - Enables <100 mW conduction loss at 0.35 A per channel |
| ID Continuous (TA = 25 °C) | -0.45 A - Dual-channel current capability supports independent low-power load control |
| Qg Total Gate Charge | 1.65–2.50 nC - Low drive power requirement compatible with GPIO-driven switching |
| VGS(th) | -0.4 to -1.0 V - Guaranteed turn-on with 1.8 V logic, eliminating need for external pull-up resistors |
| Ciss | 45 pF - Minimizes capacitive loading on driving logic in multi-MOSFET arrays |
| TJ Range | -55 to +150 °C - Supports operation in handheld devices under thermal stress and extended temperature environments |
Pinout & Package
SC-89 (SOT-563F) 6-lead ultra-small surface-mount package (1.60 mm × 1.60 mm × 0.58 mm), designed for high-density PCB layouts in portable electronics. Moisture sensitivity level (MSL) 1, lead (Pb)-free and halogen-free per IEC 61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side switched output node; connects to battery rail or power domain being controlled |
| S1 | Source of Channel 1 | Return path to load; tied to system ground or load reference when used as high-side switch |
| G1 | Gate of Channel 1 | Logic-level control input; accepts 1.5–4.5 V negative swing relative to S1 |
| D2 | Drain of Channel 2 | Independent second switched output; enables dual-load control without discrete parts |
| S2 | Source of Channel 2 | Separate return path; electrically isolated from S1-supports floating or differential loads |
| G2 | Gate of Channel 2 | Independent logic input; allows asynchronous or synchronized dual-channel control |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent P-channel topology | Reduces component count and board area vs. two discrete SOT-23 devices; eliminates inter-channel crosstalk risk |
| 100 % Rg tested | Ensures consistent gate resistance (2.4–24 Ω) across production lots, critical for predictable switching timing |
| TrenchFET® process | Delivers lowest RDS(on) per mm² among SC-89 P-channel MOSFETs at VGS ≤ -2.5 V |
| 1000 V HBM ESD rating | Enables robust handling during automated assembly and end-user device integration without added protection circuitry |
| Halogen-free & RoHS-compliant | Meets IPC-1752A material declaration requirements for consumer electronics and medical portable devices |
Applications
| Smartphone Power Management | Tablet Display Backlight Control |
|---|---|
|
Use Scenario: Independent enable/disable of camera module, SIM card power, and NFC circuitry in LTE smartphones. IC Role / Device Role / Timing Role: Dual-channel high-side load switch isolating auxiliary rails from main battery during sleep mode. Use Value: Achieves <1 µA total quiescent current per channel in off-state, extending standby battery life beyond 7 days. |
Use Scenario: PWM-controlled LED backlight dimming in 7–10 inch tablets using shared 3.3 V supply. IC Role / Device Role / Timing Role: Fast-switching P-channel driver stage accepting 100 kHz PWM from backlight controller IC. Use Value: 5–16 ns fall time ensures accurate duty-cycle fidelity at 100 kHz, eliminating visible flicker and color shift. |
| Portable Medical Sensor Hub | Wireless Earbud Charging Case |
|
Use Scenario: Sequenced power-up of ECG analog front-end, Bluetooth LE radio, and flash memory in wearable biosensors. IC Role / Device Role / Timing Role: Precision-controlled dual enable switch with <100 ns channel-to-channel skew. Use Value: Guarantees clean power sequencing without brown-out or latch-up during cold start from coin-cell battery. |
Use Scenario: Isolation of charging circuitry from earbud battery during case open/close detection. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ -1 µA) dual switch enabling mechanical lid-sensor interface. Use Value: Prevents >5 µA parasitic drain in storage mode, preserving case charge for ≥6 months. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1022CX-T1-GE3 | Single-channel variant; identical RDS(on), Qg, and package but only one MOSFET | Requires two units for dual-load control; increases BOM count and layout area | Select when only one switched rail is needed or when channel independence is not required |
| DMC2038LVT-7 | Higher RDS(on) (1.2 Ω @ -4.5 V), larger SC-70-6 package, lower ESD rating (500 V HBM) | Less suitable for 1.8 V logic drive and high-density layouts; higher conduction loss at 0.3 A | Consider only if legacy design reuse or distributor stock availability dictates substitution |
Compared with SI1023CX-T1-GE3, Si1022CX-T1-GE3 doubles footprint and cost for dual functionality, while DMC2038LVT-7 sacrifices 58 % higher on-resistance and 50 % lower ESD immunity-making SI1023CX-T1-GE3 the optimal choice for new designs prioritizing density, efficiency, and robustness in portable power switching.
Availability
SI1023CX-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, tablet display backlight control, portable medical sensor hubs, and wireless earbud charging cases requiring stable component supply and long-term lifecycle support.
Supply support for SI1023CX-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and miniaturization.
The Si1023CX product line delivers ultra-compact dual P-channel MOSFETs for space-constrained battery-operated devices where low-voltage logic compatibility and minimal quiescent current are essential.
FAQ
What is the maximum continuous drain current per channel for SI1023CX-T1-GE3 at 70 °C ambient?
The SI1023CX-T1-GE3 supports -0.36 A continuous drain current per channel at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This value assumes surface mounting on a 1" × 1" FR4 board with standard copper pour and accounts for thermal derating from the 25 °C rating of -0.45 A. Exceeding this current requires thermal analysis of the specific PCB layout.
Does SI1023CX-T1-GE3 integrate body diodes, and what are their forward voltage characteristics?
Yes, SI1023CX-T1-GE3 includes integrated source-drain body diodes for each channel. At IS = -0.3 A and TJ = 25 °C, the body diode forward voltage (VSD) is -0.8 to -1.2 V. The reverse recovery time (trr) is 16–24 ns under IF = -0.3 A and dI/dt = 100 A/µs conditions, confirming suitability for non-synchronous buck or flyback topologies with moderate switching frequency.
Can SI1023CX-T1-GE3 be driven directly by a 1.8 V microcontroller GPIO without level shifting?
Yes, SI1023CX-T1-GE3 can be driven directly by a 1.8 V microcontroller GPIO. Its gate threshold voltage (VGS(th)) ranges from -0.4 V to -1.0 V, ensuring reliable turn-on when the gate is pulled to 0 V (i.e., VGS = -1.8 V). No external level shifter is required, simplifying interface design in low-voltage portable systems.
What is the thermal resistance junction-to-ambient (RthJA) for SI1023CX-T1-GE3 under steady-state conditions?
The steady-state junction-to-ambient thermal resistance (RthJA) for SI1023CX-T1-GE3 is 675 °C/W, measured on a 1" × 1" FR4 board with standard 1 oz copper. This value reflects worst-case convection-only cooling and must be used for conservative thermal design. For improved performance, PCB copper area and thermal vias should be added beneath the exposed pad (if present) or package bottom.
Is SI1023CX-T1-GE3 suitable for use in automotive infotainment displays?
SI1023CX-T1-GE3 is not AEC-Q200 qualified and is specified for commercial temperature range (-55 to +150 °C), not automotive grade. While its electrical specs meet many infotainment subsystem requirements, Vishay does not certify it for automotive use. For such applications, engineers should select AEC-Q101-qualified alternatives like the SQJQ412EP or consult Vishay's automotive-grade portfolio before final design-in.
SI1023CX-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- 756mOhm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 45pF @ 10V
- Power - Max:
- 220mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-89 (SOT-563F)
SI1023CX-T1-GE3 FAQ
1.How can I place an order for SI1023CX-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1023CX-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1023CX-T1-GE3 reliable?
The price and inventory of SI1023CX-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1023CX-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1023CX-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1023CX-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1023CX-T1-GE3?
SI1023CX-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1023CX-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1023CX-T1-GE3?
For technical support, including SI1023CX-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1023CX-T1-GE3 requirements.
6.How does Aetrix verify that SI1023CX-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1023CX-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1023CX-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1023CX-T1-GE3?
All SI1023CX-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1023CX-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1023CX-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1023CX-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI1023CX-T1-GE3 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
Rohm Semiconductor
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UM6K34NTCN
Rohm Semiconductor
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DMG6601LVT-7
Diodes Incorporated
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