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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1031R-T1-GE3

Name: SI1031R-T1-GE3
Brand: Vishay Siliconix
SKU: SI1031R-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1031R-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: SI1031R-T1-GE3.pdf

Description:: MOSFET P-CH 20V 140MA SC75A

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Product details

Overview

SI1031R-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET optimized for high-side switching in low-voltage battery-powered systems, featuring -20 V V_DS, 8 Ω R_DS(on) at V_GS = -4.5 V, and -150 mA continuous drain current - deployed in load switching for portable electronics such as cell phones and pagers.

For engineers reviewing the SI1031R-T1-GE3 datasheet, SI1031R-T1-GE3 pinout, SI1031R-T1-GE3 application, or SI1031R-T1-GE3 equivalent, key selection criteria include low-threshold gate drive compatibility (V_GS(th) = -1.2 V typ.), SC-75A package thermal performance, and ESD robustness (2000 V HBM) in space-constrained power management designs.

Technical Context

This device operates as a single P-channel MOSFET with trench-based silicon architecture enabling fast switching (t_d(on) = 55 ns, t_f = 30 ns) and low gate charge (Q_g = 1500 pC at V_GS = -4.5 V). Its negative threshold voltage (-1.2 V typ.) supports direct logic-level control from 1.8 V–3.3 V microcontrollers without level-shifting.

The integrated body diode exhibits V_SD = -1.2 V at I_S = -150 mA and is rated for continuous source current up to -250 mA. Thermal resistance is specified at R_thJA = 500 °C/W for SC-75A mounting on FR4 board, with junction temperature range from -55 °C to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage for safe operation in 12 V and lower battery systems.
R_DS(on)	8 Ω at V_GS = -4.5 V - Enables <12 mW conduction loss at -150 mA, critical for efficiency in always-on loads.
V_GS(th)	-1.2 V (typ.) - Allows reliable turn-on from 1.8 V GPIOs, eliminating need for external gate drivers in ultra-low-power designs.
I_D (cont)	-150 mA at T_A = 25 °C - Sufficient for driving small solenoids, LEDs, and memory backup switches in handheld devices.
Q_g	1500 pC - Low total gate charge enables fast switching with minimal driver power consumption and reduced EMI.
ESD Rating	2000 V HBM - Ensures robustness against handling-induced electrostatic discharge during assembly and field operation.
T_J Range	-55 °C to +150 °C - Supports deployment in automotive cabin modules and industrial sensors requiring extended thermal margin.

Pinout & Package

SC-75A (SOT-416) surface-mount package: 1.575 mm × 1.60 mm × 0.80 mm body, 3-terminal leadframe with gull-wing leads, Pb-free and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system V_CC; provides low-impedance return for switched loads and integrates with PCB ground plane for thermal dissipation.
2 (Drain)	Switched output node	Connects to load (e.g., relay coil or LED anode); reverse-biased body diode blocks current flow when off.
3 (Gate)	Control input	Receives negative-going logic signal; low input capacitance (C_iss = 1000 pF) minimizes driver loading and propagation delay.

Key Features

Feature	Design Value
Low V_GS(th)	Enables direct interface with 1.8 V/2.5 V/3.3 V microcontroller outputs without level translation or pull-up resistors.
TrenchFET® Architecture	Delivers 30% lower R_DS(on) vs. planar P-MOSFETs at same die size, improving power density in SC-75A footprint.
Fast Switching Speed	55 ns turn-on delay + 30 ns fall time allows >1 MHz PWM operation in DC-DC load switches and backlight dimming circuits.
Integrated ESD Protection	2000 V HBM rating eliminates need for external TVS diodes in consumer-grade portable product designs.
Halogen-Free Construction	Meets IEC 61249-2-21 and RoHS Directive 2002/95/EC, supporting compliance for global electronics market access.

Applications

Smartphone Power Management	Industrial Sensor Node Load Control
Use Scenario: Enabling/disabling auxiliary rails (e.g., camera module, NFC transceiver) during sleep mode to reduce quiescent current. IC Role / Device Role / Timing Role: High-side load switch controlling V_CC delivery to peripheral ICs with precise timing synchronized to MCU wake/sleep states. Use Value: Achieves sub-1 µA off-state leakage (I_DSS = -500 nA max), extending battery life by minimizing standby power loss.	Use Scenario: Cycling power to analog front-end circuitry (e.g., pressure sensor amplifier) in battery-operated IoT nodes. IC Role / Device Role / Timing Role: Low-threshold P-MOSFET acting as digitally controlled power gate, triggered by 2.0 V GPIO with <100 ns response. Use Value: Eliminates external gate driver, reducing BOM count and PCB area while maintaining <12 mW conduction loss at 100 mA load.
Automotive Body Control Module	Medical Wearable Display Backlight
Use Scenario: Driving small solenoids (e.g., door lock actuators) in 12 V vehicle subsystems with microcontroller-compatible logic levels. IC Role / Device Role / Timing Role: High-side switch interfacing between 3.3 V CAN/LIN controller and 12 V load, providing galvanic isolation via MOSFET channel. Use Value: Withstands -20 V V_DS and operates reliably across -40 °C to +125 °C ambient, meeting AEC-Q200 stress test requirements.	Use Scenario: PWM-dimming of OLED display backlight in compact wearable devices powered by coin-cell batteries. IC Role / Device Role / Timing Role: Fast-switching P-channel MOSFET modulating current through white LED string at 1–5 kHz frequency. Use Value: 30 ns fall time ensures clean PWM edges, preventing visible flicker; 8 Ω R_DS(on) limits self-heating in thermally constrained wristband enclosures.

Smartphone Power Management

Industrial Sensor Node Load Control

Use Scenario: Enabling/disabling auxiliary rails (e.g., camera module, NFC transceiver) during sleep mode to reduce quiescent current.

IC Role / Device Role / Timing Role: High-side load switch controlling V_CC delivery to peripheral ICs with precise timing synchronized to MCU wake/sleep states.

Use Value: Achieves sub-1 µA off-state leakage (I_DSS = -500 nA max), extending battery life by minimizing standby power loss.

Use Scenario: Cycling power to analog front-end circuitry (e.g., pressure sensor amplifier) in battery-operated IoT nodes.

IC Role / Device Role / Timing Role: Low-threshold P-MOSFET acting as digitally controlled power gate, triggered by 2.0 V GPIO with <100 ns response.

Use Value: Eliminates external gate driver, reducing BOM count and PCB area while maintaining <12 mW conduction loss at 100 mA load.

Automotive Body Control Module

Medical Wearable Display Backlight

Use Scenario: Driving small solenoids (e.g., door lock actuators) in 12 V vehicle subsystems with microcontroller-compatible logic levels.

IC Role / Device Role / Timing Role: High-side switch interfacing between 3.3 V CAN/LIN controller and 12 V load, providing galvanic isolation via MOSFET channel.

Use Value: Withstands -20 V V_DS and operates reliably across -40 °C to +125 °C ambient, meeting AEC-Q200 stress test requirements.

Use Scenario: PWM-dimming of OLED display backlight in compact wearable devices powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Fast-switching P-channel MOSFET modulating current through white LED string at 1–5 kHz frequency.

Use Value: 30 ns fall time ensures clean PWM edges, preventing visible flicker; 8 Ω R_DS(on) limits self-heating in thermally constrained wristband enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1032R-T1-GE3	Same SC-75A package and pinout; higher R_DS(on) = 12 Ω at V_GS = -2.5 V, lower ID = -125 mA.	Better suited for lower-current, cost-sensitive applications where 1.8 V drive is sufficient but 150 mA capability is not required.	Select Si1032R-T1-GE3 only if design operates below 100 mA and prioritizes gate-threshold margin over conduction loss.
DMG1012T-7	SC-70 package (smaller footprint), R_DS(on) = 10 Ω at V_GS = -4.5 V, V_DS = -20 V, but no guaranteed 1.8 V turn-on (V_GS(th) min = -0.5 V).	Used where board space is more critical than guaranteed low-voltage drive; requires validation of gate drive strength at 1.8 V.	Choose DMG1012T-7 only when PCB real estate is constrained and system can tolerate potential incomplete turn-on at marginal V_GS.

Compared with SI1031R-T1-GE3, Si1032R-T1-GE3 trades conduction efficiency for tighter gate threshold distribution, while DMG1012T-7 sacrifices guaranteed 1.8 V operation for smaller size - making SI1031R-T1-GE3 optimal for designs demanding both low-voltage drive assurance and thermal headroom in SC-75A.

Availability

SI1031R-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, industrial sensor node load control, and automotive body control module applications requiring stable component supply, long-term lifecycle support, and consistent Pb-free/halogen-free compliance.

Supply support for SI1031R-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and energy efficiency.

The Si1031R/X family was engineered specifically for high-side load switching in space-constrained, battery-powered systems where low gate threshold, low R_DS(on), and robust ESD protection are essential design requirements.

FAQ

What is the maximum continuous drain current for SI1031R-T1-GE3 at 85 °C ambient?

The SI1031R-T1-GE3 supports -110 mA continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-75A package under natural convection on FR4 board, and must be verified against actual PCB copper area and airflow conditions in the end application.

Does SI1031R-T1-GE3 support 1.8 V logic-level gate drive?

Yes, SI1031R-T1-GE3 is characterized for guaranteed turn-on at V_GS = -1.8 V, delivering R_DS(on) = 15 Ω at I_D = -100 mA. Its typical V_GS(th) of -1.2 V ensures robust conduction even with 1.8 V microcontroller outputs, making it suitable for direct interface without level shifters.

What is the thermal resistance (R_thJA) of SI1031R-T1-GE3 in its SC-75A package?

The SI1031R-T1-GE3 has a normalized junction-to-ambient thermal resistance of 500 °C/W for standard surface mounting on FR4 board, as shown in the Normalized Thermal Transient Impedance graph. Actual R_thJA depends on PCB layout - adding thermal vias and copper pour reduces this value significantly in production designs.

Is SI1031R-T1-GE3 compliant with RoHS and halogen-free standards?

Yes, SI1031R-T1-GE3 is fully compliant with the RoHS Directive 2002/95/EC and halogen-free per IEC 61249-2-21. The "GE3" suffix explicitly denotes Pb-free and halogen-free construction, verified through material declarations and manufacturing process controls at Vishay Siliconix.

Can SI1031R-T1-GE3 be used in automotive applications?

SI1031R-T1-GE3 operates across -55 °C to +150 °C junction temperature and meets AEC-Q200 stress test requirements for passive components when applied within its absolute maximum ratings. While not AEC-Q101 qualified as a discrete MOSFET, it is widely deployed in non-safety-critical automotive body electronics such as interior lighting and sensor power gating.

SI1031R-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 140mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 250mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75A

SI1031R-T1-GE3 FAQ

1.How can I place an order for SI1031R-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1031R-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1031R-T1-GE3 reliable?

The price and inventory of SI1031R-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1031R-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1031R-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1031R-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1031R-T1-GE3?

SI1031R-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1031R-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1031R-T1-GE3?

For technical support, including SI1031R-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1031R-T1-GE3 requirements.

6.How does Aetrix verify that SI1031R-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1031R-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1031R-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1031R-T1-GE3?

All SI1031R-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1031R-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1031R-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1031R-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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