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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1031X-T1-GE3

Name: SI1031X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1031X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1031X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: SI1031X-T1-GE3.pdf

Description:: MOSFET P-CH 20V 155MA SC75A

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Product details

Overview

SI1031X-T1-GE3 from Vishay Siliconix is a P-channel -20 V, 8 Ω (at V_GS = -4.5 V) TrenchFET® MOSFET optimized for high-side load switching in space-constrained battery-powered systems, with -140 mA continuous drain current at 25 °C and 2000 V HBM ESD rating.

For engineers reviewing the SI1031X-T1-GE3 datasheet, SI1031X-T1-GE3 pinout, SI1031X-T1-GE3 application, or SI1031X-T1-GE3 equivalent, key selection criteria include low-threshold operation (-1.2 V typ. V_GS(th)), fast 55 ns turn-on delay, SC-89 package compatibility, and guaranteed R_DS(on) down to -1.5 V gate drive.

Technical Context

This device implements a single P-channel enhancement-mode MOSFET using Vishay's TrenchFET® process, enabling high-side switching without level-shifting circuitry due to its -0.4 V minimum gate threshold voltage and -1.2 V typical V_GS(th). It supports logic-level drive from 1.5 V–4.5 V microcontrollers.

Its dynamic performance includes 1500 pC total gate charge, 450 pC gate-drain charge, and 55 ns turn-on delay under standard test conditions (V_DD = -10 V, R_g = 10 Ω), making it suitable for medium-speed power control where low quiescent current and fast response are jointly required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage; defines safe operating range in high-side switch configurations.
R_DS(on)	8 Ω at V_GS = -4.5 V - Low conduction loss enables efficient switching of loads up to ~150 mA at room temperature.
V_GS(th)	-1.2 V (typ.) - Enables reliable turn-on from 1.8 V logic rails; supports direct MCU GPIO drive without external level shifters.
I_D (cont)	-140 mA at T_A = 25 °C - Continuous current capability suited for driving relays, LEDs, and small solenoids in portable devices.
Q_g	1500 pC - Total gate charge determines driver strength requirement; compatible with standard logic outputs and low-power gate drivers.
t_d(on)	55 ns - Turn-on delay time ensures responsive load control in timing-critical power sequencing applications.
ESD Rating	2000 V HBM - Robust electrostatic discharge immunity simplifies handling and board-level ESD protection design.

Pinout & Package

SI1031X-T1-GE3 is housed in an SC-89 (SOT-490) surface-mount package measuring 1.575 mm × 1.60 mm × 0.80 mm (L × W × H), with gull-wing leads and lead (Pb)-free/halogen-free construction per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input; accepts negative gate-source voltage to turn on; threshold centered at -1.2 V (typ.) for low-voltage logic compatibility.
2 (S)	Source	Reference node for gate drive; connected to system V_CC in high-side configuration; carries full load current.
3 (D)	Drain	Switched output node; connects to load return path; sustains -20 V reverse bias when off.

Key Features

Feature	Design Value
TrenchFET® Process	Enables -1.2 V typical V_GS(th) and 8 Ω R_DS(on) at -4.5 V, supporting direct 1.8 V/2.5 V microcontroller interface.
High-Side Switching Architecture	Eliminates need for external level shifters or N-channel + driver IC combinations in battery-powered load control.
Low Q_gd/Q_g Ratio	450 pC / 1500 pC = 0.3 - Reduces Miller-induced switching instability and improves controllability during hard-switching transitions.
SC-89 Package Thermal Performance	300 mW max power dissipation at 25 °C ambient - Enables compact PCB layout while maintaining thermal margin for intermittent 150 mA loads.
Halogen-Free & RoHS Compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - Supports environmentally regulated industrial and consumer product certifications.

Applications

Relay/Solenoid Driver	Portable Display Backlight Control
Use Scenario: Driving 12 V/50 mA electromechanical relay coils in handheld medical instruments with 3.3 V supply rails. IC Role / Device Role / Timing Role: High-side load switch providing galvanic isolation between MCU GPIO and inductive load. Use Value: -1.2 V V_GS(th) ensures full enhancement at 3.3 V logic, eliminating external driver ICs and reducing BOM count by one component.	Use Scenario: Controlling white LED strings in ultra-thin smartwatches powered by 3.7 V Li-ion batteries. IC Role / Device Role / Timing Role: High-side current path switch enabling PWM dimming with minimal voltage headroom loss. Use Value: 8 Ω R_DS(on) at -4.5 V yields <0.4 V dropout at 50 mA, preserving >90% of battery voltage for LED forward bias.
Battery-Powered Memory Power Gating	Cell Phone Power Sequencing
Use Scenario: Enabling/disabling SRAM retention power in low-power IoT sensor nodes during deep-sleep cycles. IC Role / Device Role / Timing Role: Load switch managing V_CC rail to memory subsystem based on wake-up controller signals. Use Value: 2000 V HBM ESD rating protects against handling damage during manual assembly of small-form-factor modules.	Use Scenario: Sequencing power to camera module subsystems in smartphones during boot and sleep transitions. IC Role / Device Role / Timing Role: High-side enable switch synchronizing with PMIC-controlled power-up timing sequences. Use Value: 55 ns t_d(on) supports sub-microsecond enable timing alignment with system clock domains.

Relay/Solenoid Driver

Portable Display Backlight Control

Use Scenario: Driving 12 V/50 mA electromechanical relay coils in handheld medical instruments with 3.3 V supply rails.

IC Role / Device Role / Timing Role: High-side load switch providing galvanic isolation between MCU GPIO and inductive load.

Use Value: -1.2 V V_GS(th) ensures full enhancement at 3.3 V logic, eliminating external driver ICs and reducing BOM count by one component.

Use Scenario: Controlling white LED strings in ultra-thin smartwatches powered by 3.7 V Li-ion batteries.

IC Role / Device Role / Timing Role: High-side current path switch enabling PWM dimming with minimal voltage headroom loss.

Use Value: 8 Ω R_DS(on) at -4.5 V yields <0.4 V dropout at 50 mA, preserving >90% of battery voltage for LED forward bias.

Battery-Powered Memory Power Gating

Cell Phone Power Sequencing

Use Scenario: Enabling/disabling SRAM retention power in low-power IoT sensor nodes during deep-sleep cycles.

IC Role / Device Role / Timing Role: Load switch managing V_CC rail to memory subsystem based on wake-up controller signals.

Use Value: 2000 V HBM ESD rating protects against handling damage during manual assembly of small-form-factor modules.

Use Scenario: Sequencing power to camera module subsystems in smartphones during boot and sleep transitions.

IC Role / Device Role / Timing Role: High-side enable switch synchronizing with PMIC-controlled power-up timing sequences.

Use Value: 55 ns t_d(on) supports sub-microsecond enable timing alignment with system clock domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-side load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1021X-T1-GE3	Lower R_DS(on) (4.5 Ω @ -4.5 V) but higher V_GS(th) (-1.8 V typ.), same SC-89 package.	Better efficiency at higher currents (>100 mA); requires ≥2.5 V gate drive for full enhancement.	Choose Si1021X-T1-GE3 when load current exceeds 100 mA and system logic supports ≥2.5 V drive.
DMN2011UFG-7	Higher I_D (−250 mA), larger SOT-323 package, R_DS(on) = 10 Ω @ -4.5 V, no halogen-free marking.	Supports higher continuous current but occupies 3× PCB area; lacks IEC 61249-2-21 compliance.	Choose DMN2011UFG-7 only if current demand exceeds -140 mA and halogen-free certification is not required.

Compared with SI1031X-T1-GE3, Si1021X-T1-GE3 trades lower on-resistance for higher gate threshold, while DMN2011UFG-7 offers higher current rating at the cost of footprint and environmental compliance-making SI1031X-T1-GE3 optimal for space- and specification-constrained 1.8 V–3.3 V battery systems.

Availability

SI1031X-T1-GE3 is available at Aetrix Electronics and suitable for portable medical devices, wearable display subsystems, and battery management circuits requiring stable component supply, halogen-free compliance, and SC-89 footprint consistency.

Supply support for SI1031X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation across multiple qualified sites.

The Si1031X-T1-GE3 belongs to Vishay's TrenchFET® low-voltage P-channel MOSFET family, engineered specifically for high-side switching in battery-operated portable electronics where logic-level drive, small footprint, and robust ESD tolerance are critical.

FAQ

What is the maximum continuous drain current for SI1031X-T1-GE3 at 85 °C ambient?

The SI1031X-T1-GE3 supports -100 mA continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow.

Does SI1031X-T1-GE3 support 1.8 V logic-level gate drive?

Yes, SI1031X-T1-GE3 supports 1.8 V logic-level drive: its typical gate threshold voltage is -1.2 V, with minimum -0.4 V, ensuring reliable turn-on at V_GS = -1.8 V. At that drive level, R_DS(on) is 15 Ω (ID = -100 mA), sufficient for many low-current switching applications.

What is the thermal resistance junction-to-ambient (R_θJA) for SI1031X-T1-GE3?

The SI1031X-T1-GE3 has a typical R_θJA of 500 °C/W when mounted on a standard FR4 board with minimal copper, as derived from normalized thermal transient impedance curves in the datasheet. Actual values improve significantly with added thermal pad area or internal ground planes.

Is SI1031X-T1-GE3 pin-compatible with SI1031R-T1-GE3?

No, SI1031X-T1-GE3 (SC-89) and SI1031R-T1-GE3 (SC-75A) share identical electrical specifications and pin function assignment (G-S-D), but differ in physical dimensions and land pattern requirements; SC-89 is larger (1.575 mm × 1.60 mm vs. 1.575 mm × 1.25 mm) and requires updated PCB layout.

What does the "GE3" suffix indicate in SI1031X-T1-GE3?

The "GE3" suffix in SI1031X-T1-GE3 denotes Vishay's green packaging standard: lead (Pb)-free terminations and halogen-free construction compliant with IEC 61249-2-21 and RoHS Directive 2002/95/EC, verified per Vishay document 71171 Rev. D.

SI1031X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 155mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 4.5 V

Vgs (Max):: ±6V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75A

SI1031X-T1-GE3 FAQ

1.How can I place an order for SI1031X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1031X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1031X-T1-GE3 reliable?

The price and inventory of SI1031X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1031X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1031X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1031X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1031X-T1-GE3?

SI1031X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1031X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1031X-T1-GE3?

For technical support, including SI1031X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1031X-T1-GE3 requirements.

6.How does Aetrix verify that SI1031X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1031X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1031X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1031X-T1-GE3?

All SI1031X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1031X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1031X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1031X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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