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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1039X-T1-E3

Name: SI1039X-T1-E3
Brand: Vishay Siliconix
SKU: SI1039X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1039X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1039X-T1-E3.pdf

Description:: MOSFET P-CH 12V 870MA SC89-6

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Product details

Overview

SI1039X-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage load switching in space-constrained portable electronics. It features -12 V V_DS, 0.165 Ω R_DS(on) at V_GS = -4.5 V, -0.95 A continuous drain current, 0.6 mm profile, and SC-89 (6-lead) package - enabling compact battery-powered load control in cell phones and pagers.

For engineers reviewing the SI1039X-T1-E3 datasheet, SI1039X-T1-E3 pinout, SI1039X-T1-E3 application, or SI1039X-T1-E3 equivalent, key selection criteria include guaranteed low-threshold operation down to -1.8 V, verified thermal resistance (R_thJA = 600 °C/W), and halogen-free, RoHS-compliant construction per IEC 61249-2-21.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with gate threshold voltage V_GS(th) = -0.45 V (typ.), supporting logic-level drive from 1.8 V microcontrollers. Its trench-based silicon structure delivers low on-resistance while maintaining robust safe operating area under pulsed conditions (I_DM = -4 A).

The SC-89 package integrates six terminals with dual-drain configuration (pins 1,2,4,5 = D; pin 3 = G; pin 6 = S), enabling high-current density in minimal PCB area. Thermal performance is characterized for surface-mount operation on 1" × 1" FR4 with minimum copper, with steady-state power dissipation limited to 0.17 W at T_A = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - maximum blocking voltage for battery-side load switching in 3.3 V/5 V systems
R_DS(on)	0.165 Ω at V_GS = -4.5 V - ensures <150 mW conduction loss at 0.95 A load current
I_D (continuous)	-0.95 A at T_A = 25 °C - supports typical RF module or backlight load currents
V_GS(th)	-0.45 V (typ.) - enables reliable turn-on with 1.8 V GPIO without level-shifting
Q_g	3.8 nC (typ.) - low gate charge reduces switching losses in high-frequency PWM control
T_J range	-55 °C to +150 °C - qualified for extended temperature operation in handheld enclosures

Pinout & Package

SC-89 (6-lead) surface-mount package: 1.6 mm × 1.6 mm footprint, 0.6 mm height, thermally enhanced leadframe design with exposed drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain connections - reduce trace resistance and improve thermal spreading to PCB copper
3	Gate (G)	Control input - accepts logic-level negative voltage for P-channel turn-on
6	Source (S)	Reference node for load return path - tied to system ground or battery negative

Key Features

Feature	Design Value
TrenchFET® technology	Enables sub-0.2 Ω R_DS(on) at 1.8 V gate drive while maintaining rugged avalanche rating
Low-profile SC-89	0.6 mm max height allows stacking under thin bezels or beneath displays in mobile form factors
Halogen-free & RoHS	Complies with IEC 61249-2-21 and Directive 2002/95/EC - meets global environmental compliance requirements
Low V_GS(th)	-0.45 V typical threshold ensures full enhancement with 1.8 V microcontroller outputs without external bias

Applications

Cell Phone Load Switch	Pager Power Management
Use Scenario: Controlling power to RF transceiver modules during sleep/wake cycles to minimize standby current. IC Role / Device Role / Timing Role: High-side load switch isolating V_BAT from peripheral circuitry under MCU command. Use Value: Achieves <1 µA off-state leakage (I_DSS = -1 µA), extending battery life between charges.	Use Scenario: Enabling/disabling LED backlight and buzzer driver circuits based on alert priority. IC Role / Device Role / Timing Role: Low-voltage P-channel switch driven directly by baseband processor GPIOs. Use Value: Guaranteed turn-on at V_GS = -1.8 V eliminates need for charge-pump or level-shifter circuitry.
Wearable Sensor Hub	Bluetooth Headset Audio Path
Use Scenario: Sequencing power to MEMS accelerometers and environmental sensors during motion-triggered wake-up. IC Role / Device Role / Timing Role: Compact-footprint load switch managing multiple sensor supply rails. Use Value: 1.6 mm × 1.6 mm SC-89 package fits within tight spacing constraints of wrist-worn PCB layouts.	Use Scenario: Muting audio amplifier output during Bluetooth link reconnection to prevent pop noise. IC Role / Device Role / Timing Role: Fast-turnoff switch (<30 ns fall time) inserted in amplifier V_CC path. Use Value: 16–30 ns fall time ensures clean, glitch-free muting without audible artifacts.

Cell Phone Load Switch

Pager Power Management

Use Scenario: Controlling power to RF transceiver modules during sleep/wake cycles to minimize standby current.

IC Role / Device Role / Timing Role: High-side load switch isolating V_BAT from peripheral circuitry under MCU command.

Use Value: Achieves <1 µA off-state leakage (I_DSS = -1 µA), extending battery life between charges.

Use Scenario: Enabling/disabling LED backlight and buzzer driver circuits based on alert priority.

IC Role / Device Role / Timing Role: Low-voltage P-channel switch driven directly by baseband processor GPIOs.

Use Value: Guaranteed turn-on at V_GS = -1.8 V eliminates need for charge-pump or level-shifter circuitry.

Wearable Sensor Hub

Bluetooth Headset Audio Path

Use Scenario: Sequencing power to MEMS accelerometers and environmental sensors during motion-triggered wake-up.

IC Role / Device Role / Timing Role: Compact-footprint load switch managing multiple sensor supply rails.

Use Value: 1.6 mm × 1.6 mm SC-89 package fits within tight spacing constraints of wrist-worn PCB layouts.

Use Scenario: Muting audio amplifier output during Bluetooth link reconnection to prevent pop noise.

IC Role / Device Role / Timing Role: Fast-turnoff switch (<30 ns fall time) inserted in amplifier V_CC path.

Use Value: 16–30 ns fall time ensures clean, glitch-free muting without audible artifacts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1029X-T1-GE3	Slightly higher R_DS(on) (0.220 Ω @ V_GS = -2.5 V); identical SC-89 package and pinout	Same footprint but marginally higher conduction loss at ultra-low gate drive	Select when cost sensitivity outweighs 15 % R_DS(on) penalty at 2.5 V drive
DMN2020LFG-7	Lower V_DS (-8 V), lower R_DS(on) (0.125 Ω @ -4.5 V), same 1.6 mm × 1.6 mm DFN package	Not suitable for -12 V rail applications; requires redesign if system uses >8 V battery	Prefer for 3.7 V Li-ion systems where tighter R_DS(on) improves efficiency

Compared with SI1039X-T1-E3, Si1029X-T1-GE3 offers identical mechanical compatibility but trades off on-resistance for cost, while DMN2020LFG-7 provides better conduction performance at the expense of reduced voltage rating - requiring careful validation against system rail voltage.

Availability

SI1039X-T1-E3 is available at Aetrix Electronics and suitable for cell phone load switching, pager power management, wearable sensor hub sequencing, and Bluetooth headset audio path control requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI1039X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The Si1039X series belongs to Vishay's TrenchFET® low-voltage P-channel MOSFET product line, engineered specifically for space-constrained, battery-operated portable electronics requiring logic-level gate drive and ultra-low profile packaging.

FAQ

What is the maximum continuous drain current for SI1039X-T1-E3 at 70 °C ambient?

The SI1039X-T1-E3 supports -0.76 A continuous drain current at T_A = 70 °C under standard mounting conditions (1" × 1" FR4 board with minimum copper). This derating reflects thermal limits imposed by its 600 °C/W junction-to-ambient resistance. The SI1039X-T1-E3 must be used within this limit to avoid exceeding the 150 °C maximum junction temperature specified in the datasheet.

Does SI1039X-T1-E3 support 1.8 V logic-level gate drive?

Yes, the SI1039X-T1-E3 is specifically characterized for 1.8 V operation: R_DS(on) = 0.280 Ω at V_GS = -1.8 V and I_D = -0.2 A. Its typical V_GS(th) of -0.45 V ensures full enhancement with 1.8 V microcontroller outputs. The SI1039X-T1-E3 does not require external gate bias or level-shifting circuitry in 1.8 V systems.

What is the thermal resistance R_thJA of SI1039X-T1-E3 in steady-state conditions?

The SI1039X-T1-E3 has a maximum steady-state junction-to-ambient thermal resistance (R_thJA) of 720 °C/W when mounted on a 1" × 1" FR4 board with minimum copper. Its typical value is 600 °C/W. This parameter defines the temperature rise per watt of power dissipated - for example, 0.17 W dissipation yields ~102 °C rise above ambient. The SI1039X-T1-E3 thermal performance is validated per JEDEC JESD51-3 standards.

Is SI1039X-T1-E3 halogen-free and RoHS compliant?

Yes, the SI1039X-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. This is confirmed in the Vishay datasheet (Document Number 70682, Rev. D) and reflected in its "-E3" suffix designation. The SI1039X-T1-E3 contains no brominated flame retardants or chlorine-based compounds above threshold limits.

What is the gate charge Q_g of SI1039X-T1-E3 and how does it affect switching speed?

The SI1039X-T1-E3 has a typical total gate charge (Q_g) of 3.8 nC at V_DS = -6 V and V_GS = -4.5 V. This low value enables fast switching: measured turn-off delay is 30–60 ns and fall time is 16–30 ns with 6 Ω gate resistance. Lower Q_g reduces driver power demand and minimizes switching losses - critical for high-efficiency load switching in SI1039X-T1-E3 applications.

SI1039X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 870mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 165mOhm @ 870mA, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 170mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1039X-T1-E3 FAQ

1.How can I place an order for SI1039X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1039X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1039X-T1-E3 reliable?

The price and inventory of SI1039X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1039X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1039X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1039X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1039X-T1-E3?

SI1039X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1039X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1039X-T1-E3?

For technical support, including SI1039X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1039X-T1-E3 requirements.

6.How does Aetrix verify that SI1039X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1039X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1039X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1039X-T1-E3?

All SI1039X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1039X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1039X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1039X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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