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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1039X-T1-GE3

Name: SI1039X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1039X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1039X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1039X-T1-GE3.pdf

Description:: MOSFET P-CH 12V 870MA SC89-6

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Product details

Overview

SI1039X-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET in SC-89 (6-lead) package, rated for -12 V V_DS, 0.165 Ω R_DS(on) at V_GS = -4.5 V, and -0.95 A continuous drain current at T_A = 25 °C. It serves as a low-voltage load switch in space-constrained portable electronics.

For engineers reviewing the SI1039X-T1-GE3 datasheet, SI1039X-T1-GE3 pinout, SI1039X-T1-GE3 application, or SI1039X-T1-GE3 equivalent, key selection criteria include its 1.6 mm × 1.6 mm footprint, -1.8 V gate threshold compatibility with low-power logic, thermal resistance up to 720 °C/W, and halogen-free/RoHS-compliant construction.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge (Q_g = 3.8–6 nC). Its negative V_GS(th) of -0.45 V (typ.) enables reliable turn-on from 1.8 V logic rails.

The integrated body diode supports reverse-current paths in load-switch configurations, with V_SD = -0.78 to -1.2 V at I_S = -0.14 A. Thermal performance is characterized under standard FR4 mounting (1" × 1"), with R_thJA up to 720 °C/W in steady state.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for low-voltage DC load switching
R_DS(on)	0.165 Ω at V_GS = -4.5 V - Enables <150 mW conduction loss at 0.95 A
I_D (continuous)	-0.95 A at T_A = 25 °C - Suitable for sub-1 A portable power rail control
V_GS(th)	-0.45 V (typ.) - Ensures full enhancement with 1.8 V logic-level drive
Q_g	3.8–6 nC - Supports efficient 1–10 MHz switching in compact DC-DC or sequencing circuits
Package	SC-89 (6-lead) - 1.6 mm × 1.6 mm × 0.6 mm footprint for ultra-dense PCB layouts
T_J range	-55 to +150 °C - Qualified for extended industrial temperature operation

Pinout & Package

SC-89 package: 1.6 mm × 1.6 mm body, 0.6 mm profile, 6-lead surface-mount outline with exposed drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals - reduce R_DS(on) and improve thermal dissipation via PCB copper
3	Gate (G)	Single gate input - accepts standard CMOS logic drive without level shifting
6	Source (S)	Source reference terminal - connects to system ground or load return path

Key Features

Feature	Design Value
TrenchFET® architecture	Enables lower R_DS(on) per mm² than planar MOSFETs, critical for miniaturized battery-powered designs
Low-profile SC-89	0.6 mm height allows stacking under shields or beneath connectors in slim handheld enclosures
Halogen-free & RoHS	Complies with IEC 61249-2-21 and EU Directive 2002/95/EC for environmentally regulated end equipment
Low V_GS(th)	-0.45 V typical threshold ensures robust turn-on margin with 1.8 V microcontroller GPIOs

Applications

Smartphone Load Switch	Wearable Power Sequencing
Use Scenario: Enabling/disabling camera module or RF front-end power rail during sleep mode. IC Role / Device Role / Timing Role: P-channel high-side load switch controlled by baseband processor GPIO. Use Value: Minimizes quiescent current leakage (<1 µA IDSS) and eliminates need for external level shifters due to -1.8 V logic compatibility.	Use Scenario: Controlled power-up of sensor subsystem (accelerometer + BLE SoC) after MCU reset. IC Role / Device Role / Timing Role: Single-polarity power sequencer with fast turn-on (t_d(on) = 15–30 ns) and soft-start capability. Use Value: Prevents inrush current spikes using gate capacitance control, enabled by low Q_g and predictable V_GS(th).
USB OTG Power Gate	Medical Patch Monitor Supply Control
Use Scenario: Isolating VBUS path when device operates as USB peripheral to prevent backfeed. IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between USB port and internal LDO input. Use Value: Integrated body diode with V_SD ≤ -1.2 V provides reliable reverse conduction without external diode.	Use Scenario: Managing power to ECG analog front-end during intermittent measurement cycles. IC Role / Device Role / Timing Role: Low-leakage, thermally stable power gate operating across -20 to +70 °C ambient. Use Value: Stable R_DS(on) over temperature (±15% from -55 to +150 °C) ensures consistent voltage drop and thermal behavior.

Smartphone Load Switch

Wearable Power Sequencing

Use Scenario: Enabling/disabling camera module or RF front-end power rail during sleep mode.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlled by baseband processor GPIO.

Use Value: Minimizes quiescent current leakage (<1 µA IDSS) and eliminates need for external level shifters due to -1.8 V logic compatibility.

Use Scenario: Controlled power-up of sensor subsystem (accelerometer + BLE SoC) after MCU reset.

IC Role / Device Role / Timing Role: Single-polarity power sequencer with fast turn-on (t_d(on) = 15–30 ns) and soft-start capability.

Use Value: Prevents inrush current spikes using gate capacitance control, enabled by low Q_g and predictable V_GS(th).

USB OTG Power Gate

Medical Patch Monitor Supply Control

Use Scenario: Isolating VBUS path when device operates as USB peripheral to prevent backfeed.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between USB port and internal LDO input.

Use Value: Integrated body diode with V_SD ≤ -1.2 V provides reliable reverse conduction without external diode.

Use Scenario: Managing power to ECG analog front-end during intermittent measurement cycles.

IC Role / Device Role / Timing Role: Low-leakage, thermally stable power gate operating across -20 to +70 °C ambient.

Use Value: Stable R_DS(on) over temperature (±15% from -55 to +150 °C) ensures consistent voltage drop and thermal behavior.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1029X-T1-GE3	Same SC-89 package; higher R_DS(on) = 0.22 Ω at V_GS = -2.5 V; lower I_D = -0.67 A	Better suited for ultra-low-power standby states where <0.5 A load current suffices	Select when lower gate charge (Q_g = 2.8 nC) and tighter V_GS(th) tolerance are prioritized over conduction loss
DMN2020LFG-7	DFN1006-3 package (1.0 mm × 0.6 mm); R_DS(on) = 0.21 Ω at V_GS = -2.5 V; no exposed drain pads	Smaller footprint but higher thermal resistance limits sustained >0.5 A operation	Choose for maximum board area savings where peak current is <0.6 A and thermal derating is acceptable

Compared with SI1039X-T1-GE3, Si1029X-T1-GE3 trades conduction efficiency for tighter gate control, while DMN2020LFG-7 sacrifices thermal headroom for extreme miniaturization - both require layout review due to differing thermal and pinout constraints.

Availability

SI1039X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor sequencing, and medical patch monitor supply control requiring stable component supply and long-term lifecycle support.

Supply support for SI1039X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si1039X series belongs to Vishay's TrenchFET® low-voltage P-channel portfolio, designed specifically for compact, battery-operated consumer electronics requiring logic-level gate drive and minimal PCB real estate.

FAQ

What is the maximum continuous drain current rating for SI1039X-T1-GE3 at 70 °C ambient?

The SI1039X-T1-GE3 supports -0.76 A continuous drain current at T_A = 70 °C under standard FR4 mounting conditions (1" × 1" board, minimum copper). This derating reflects its thermal resistance profile and ensures safe junction temperature operation within the -55 to +150 °C range. The SI1039X-T1-GE3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SI1039X-T1-GE3 have an integrated body diode, and what is its forward voltage?

Yes, the SI1039X-T1-GE3 includes an inherent body diode formed by its MOSFET structure. Its source-drain forward voltage (V_SD) is -0.78 to -1.2 V at I_S = -0.14 A and V_GS = 0 V, as specified in the "Diode Forward Voltage" row of the Electrical Characteristics table. This diode enables reverse-current conduction in load-switch topologies without adding external components - a key feature of the SI1039X-T1-GE3 design.

Can SI1039X-T1-GE3 be driven directly by a 1.8 V microcontroller GPIO?

Yes, the SI1039X-T1-GE3 is explicitly characterized for 1.8 V logic compatibility: its typical gate threshold voltage (V_GS(th)) is -0.45 V, and R_DS(on) is guaranteed at V_GS = -1.8 V (0.280 Ω). This ensures full enhancement and low conduction loss when driven directly from 1.8 V I/O, eliminating level-shifter circuitry in designs using the SI1039X-T1-GE3.

What is the thermal resistance from junction to ambient for SI1039X-T1-GE3 in steady-state operation?

The SI1039X-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 720 °C/W under steady-state conditions on a 1" × 1" FR4 board with minimum copper. This value appears in the Thermal Resistance Ratings table and defines the worst-case temperature rise per watt of power dissipation - critical for thermal design validation of the SI1039X-T1-GE3 in compact layouts.

Is SI1039X-T1-GE3 compliant with halogen-free and RoHS requirements?

Yes, the SI1039X-T1-GE3 is certified halogen-free per IEC 61249-2-21 and compliant with the RoHS Directive 2002/95/EC, as confirmed in the Features section and Ordering Information line of its Vishay datasheet (Document Number: 70682). The "-GE3" suffix explicitly denotes lead-free and halogen-free construction - a verified specification of the SI1039X-T1-GE3 part number.

SI1039X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 870mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 165mOhm @ 870mA, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 170mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1039X-T1-GE3 FAQ

1.How can I place an order for SI1039X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1039X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1039X-T1-GE3 reliable?

The price and inventory of SI1039X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1039X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1039X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1039X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1039X-T1-GE3?

SI1039X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1039X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1039X-T1-GE3?

For technical support, including SI1039X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1039X-T1-GE3 requirements.

6.How does Aetrix verify that SI1039X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1039X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1039X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1039X-T1-GE3?

All SI1039X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1039X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1039X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1039X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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