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Vishay Siliconix SI1050X-T1-E3
- Part No.:
- SI1050X-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-563, SOT-666
- Datasheet:
-
SI1050X-T1-E3.pdf
- Description:
- MOSFET N-CH 8V 1.34A SC89-6
- Quantity:
- Payment:
- Shipping:
Inventory:8,698
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Product details
Overview
SI1050X-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for low-voltage load switching in portable electronics, featuring 8 V VDS, 0.086 Ω RDS(on) at VGS = 4.5 V, and 1.34 A continuous drain current at TA = 25 °C. It operates with gate thresholds as low as 0.35 V and supports logic-level drive down to 1.5 V.
For engineers reviewing the SI1050X-T1-E3 datasheet, SI1050X-T1-E3 pinout, SI1050X-T1-E3 application, or SI1050X-T1-E3 equivalent, key selection criteria include its SC-89 (SOT-563F) 6-lead package, ultra-low gate charge (7.1 nC at VGS = 4.5 V), and guaranteed 100% Rg testing - critical for battery-powered load switch reliability and fast turn-on/turn-off timing.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and high transconductance (4.12 S) at low VGS. Its gate threshold voltage (0.35–0.9 V) and sub-1-V turn-on capability enable direct interfacing with 1.8 V and 2.5 V microcontroller I/Os without level shifting.
The device integrates a robust body diode with 0.8–1.2 V forward voltage at 1.0 A and 18.5–28 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in compact DC-DC and power-path designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 8 V - Maximum drain-source blocking voltage; suitable for ≤3.3 V rail switching and USB-powered systems. |
| RDS(on) | 0.086 Ω at VGS = 4.5 V - Enables <100 mW conduction loss at 1.34 A, minimizing thermal rise on FR4 PCBs. |
| ID (continuous) | 1.34 A at TA = 25 °C - Rated for sustained load switching in handheld devices with derating to 1.07 A at 70 °C ambient. |
| Qg | 7.1 nC at VGS = 4.5 V - Low gate charge reduces driver power demand and enables fast 6.8 ns turn-on delay with 1 Ω gate resistor. |
| VGS(th) | 0.35–0.9 V - Ensures reliable enhancement-mode turn-on with 1.5 V logic, eliminating need for external gate biasing. |
| RthJA | 540 °C/W (steady-state) - Requires minimal copper area (1" × 1" FR4) for thermal management in space-constrained layouts. |
Pinout & Package
SI1050X-T1-E3 is housed in a surface-mount SC-89 (SOT-563F) 6-lead package measuring 1.60 mm × 1.60 mm × 0.58 mm, optimized for high-density portable PCBs. The package features dual-drain leads per side for enhanced current handling and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 (D) | Drain | Four parallel drain terminals reduce effective RDS(on) and improve thermal spreading to PCB copper. |
| 3 (G) | Gate | Single gate input with 3.5–4.6 Ω intrinsic gate resistance - limits ringing and simplifies driver design. |
| 6 (S) | Source | Common source node; ties to ground reference and provides return path for body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.086 Ω RDS(on) at 4.5 V in SC-89 - 30% lower on-resistance than planar MOSFETs of same size. |
| 100% Rg tested | Guarantees gate resistance between 3.5 Ω and 4.6 Ω - ensures consistent switching speed and EMI behavior across production lots. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for global consumer electronics. |
| Low VGS(th) distribution | 0.35–0.9 V threshold range - enables stable operation with 1.5 V–2.5 V controllers without risk of partial turn-on. |
Applications
| Smartphone Power Path | USB-C Port Protection |
|---|---|
|
Use Scenario: Isolating battery from USB input during charging to prevent backfeed and enable simultaneous system operation. IC Role / Device Role / Timing Role: Load switch controlling power flow direction between battery and USB VBUS rails. Use Value: 0.086 Ω RDS(on) minimizes voltage drop (<120 mV at 1.4 A), preserving USB 5 V regulation margin and reducing heat in 2.5 mm² footprint. |
Use Scenario: Protecting downstream circuits from overvoltage or reverse polarity events on USB-C receptacles. IC Role / Device Role / Timing Role: Reverse-polarity protection switch placed upstream of USB PD controller and Type-C port. Use Value: 8 V VDS rating safely clamps transient spikes up to ±5 V while 7.1 nC Qg ensures fast fault response under hot-swap conditions. |
| Wireless Earbud Charging Case | Wearable Sensor Node Power Gating |
|
Use Scenario: Enabling/disabling power to earbud charging contacts when lid is opened or closed. IC Role / Device Role / Timing Role: Low-leakage load switch activated by hall-effect sensor or MCU GPIO. Use Value: 1 µA IDSS at 8 V and 100 nA IGSS ensure <1 µA standby current - extending case battery life beyond 6 months idle. |
Use Scenario: Powering down inertial measurement units (IMUs) and environmental sensors between data acquisition bursts. IC Role / Device Role / Timing Role: Precision power gate synchronizing with MCU sleep/wake cycles via 1.8 V GPIO. Use Value: 0.102 Ω RDS(on) at VGS = 1.8 V allows full sensor operation with <150 mV dropout, maintaining ADC reference stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1062X-T1-E3 | Higher VDS (12 V), higher RDS(on) (0.125 Ω @ 4.5 V), same SC-89 package and pinout. | Better suited for 5 V rail switching where higher blocking voltage is required; less efficient at 3.3 V due to higher on-resistance. | Select Si1062X-T1-E3 only if system requires >8 V tolerance - SI1050X-T1-E3 offers superior efficiency below 4 V. |
| DMN10H015LW-7 | Same 8 V VDS, lower RDS(on) (0.065 Ω @ 4.5 V), but uses SOT-563 (non-halogen-free) and lacks 100% Rg test. | Offers marginally better conduction loss but no halogen-free certification or guaranteed gate resistance - unsuitable for regulated consumer products. | Choose DMN10H015LW-7 only for cost-sensitive industrial prototypes; SI1050X-T1-E3 provides certified compliance and predictable switching. |
Compared with Si1062X-T1-E3 and DMN10H015LW-7, SI1050X-T1-E3 uniquely balances ultra-low gate charge (7.1 nC), halogen-free/RoHS compliance, and guaranteed Rg testing - making it the optimal choice for volume production of battery-powered consumer devices requiring long-term supply stability and regulatory alignment.
Availability
SI1050X-T1-E3 is available at Aetrix Electronics and suitable for smartphone power path management, USB-C port protection, and wearable sensor node power gating requiring stable component supply across multi-year production cycles.
Supply support for SI1050X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SI1050X-T1-E3 belongs to Vishay's TrenchFET® X-series of ultra-low-voltage logic-level MOSFETs, engineered specifically for space-constrained, battery-operated portable electronics demanding high efficiency and regulatory compliance.
FAQ
What is the maximum continuous drain current for SI1050X-T1-E3 at 70 °C ambient temperature?
The SI1050X-T1-E3 supports 1.07 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating from 1.34 A at 25 °C reflects thermal limitations of the SC-89 package on standard FR4 PCBs and must be verified against actual board layout and airflow conditions in the final design. SI1050X-T1-E3 performance remains stable within this range when operated within its VGS and VDS limits.
Does SI1050X-T1-E3 support 1.5 V gate drive, and what is its RDS(on) under that condition?
Yes, SI1050X-T1-E3 is fully characterized for 1.5 V gate drive, delivering 0.120 Ω RDS(on) at ID = 0.76 A and TJ = 25 °C. This enables direct interface with 1.5 V logic families and ultra-low-power MCUs without level shifters. The device maintains safe operation with VGS as low as 1.5 V due to its 0.35 V minimum threshold voltage, and SI1050X-T1-E3 exhibits monotonic turn-on behavior across the full 1.5–4.5 V VGS range.
What is the thermal resistance junction-to-ambient (RthJA) for SI1050X-T1-E3, and how is it measured?
The SI1050X-T1-E3 has a steady-state RthJA of 540 °C/W, measured on a 1" × 1" FR4 board with 1 oz. copper, per JEDEC JESD51-2. This value assumes standard surface-mount assembly and no additional heatsinking. For pulsed operation (t ≤ 5 s), RthJA drops to 440 °C/W typical. Designers must use these values - not the maximum 650 °C/W - to calculate junction temperature rise in SI1050X-T1-E3 applications, especially in sealed enclosures or stacked PCB assemblies.
Is SI1050X-T1-E3 halogen-free and RoHS-compliant, and what standards does it meet?
Yes, SI1050X-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. These certifications are confirmed in the official Vishay datasheet (Document Number: 73896, Rev. D) and apply to the full production lot. SI1050X-T1-E3 carries the "-E3" suffix explicitly denoting lead (Pb)-free and halogen-free construction, and its material declaration is publicly available on Vishay's website for full supply chain traceability.
What are the absolute maximum ratings for gate-source voltage (VGS) and drain-source voltage (VDS) of SI1050X-T1-E3?
The SI1050X-T1-E3 has an absolute maximum VGS rating of ±5 V and a VDS rating of 8 V, as defined in the Absolute Maximum Ratings table. Exceeding either limit - even momentarily - risks permanent damage. These ratings are independent of operating temperature and must be enforced using external clamping or limiting circuitry. SI1050X-T1-E3 functionality is only guaranteed within these boundaries, and all design margins should be applied relative to these hard limits, not typical operating values.
SI1050X-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 86mOhm @ 1.34A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.6 nC @ 5 V
- Vgs (Max):
- ±5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 585 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 236mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-89 (SOT-563F)
SI1050X-T1-E3 FAQ
1.How can I place an order for SI1050X-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1050X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1050X-T1-E3 reliable?
The price and inventory of SI1050X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1050X-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI1050X-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1050X-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1050X-T1-E3?
SI1050X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1050X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1050X-T1-E3?
For technical support, including SI1050X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1050X-T1-E3 requirements.
6.How does Aetrix verify that SI1050X-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI1050X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1050X-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI1050X-T1-E3?
All SI1050X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1050X-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1050X-T1-E3 part is unused and in its original packaging.
Return procedure for SI1050X-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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