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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1051X-T1-GE3

Name: SI1051X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1051X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1051X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1051X-T1-GE3.pdf

Description:: MOSFET P-CH 8V 1.2A SC89-6

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Product details

Overview

SI1051X-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -8 V drain-source voltage, 1.2 A continuous drain current at 25 °C, and 0.122 Ω R_DS(on) at V_GS = -4.5 V; it serves as a compact load switch in space-constrained portable electronics.

For engineers reviewing the SI1051X-T1-GE3 datasheet, SI1051X-T1-GE3 pinout, SI1051X-T1-GE3 application, or SI1051X-T1-GE3 equivalent, key selection criteria include low gate threshold (-1.0 V max V_GS(th)), halogen-free RoHS-compliant packaging, and SC-89 footprint compatibility with portable power management layouts.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with trench-based silicon architecture optimized for low-voltage logic-level gate drive. Its -0.3 V to -1.0 V gate threshold enables direct interfacing with 1.8 V and 2.5 V microcontroller I/O without level shifting.

Thermal performance is defined by a maximum junction-to-ambient thermal resistance of 650 °C/W under steady-state conditions on FR4, and its body diode exhibits 0.8–1.2 V forward voltage at -1.0 A, supporting bidirectional current handling in load-switch configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum reverse-blocking capability for low-voltage battery-side switching
R_DS(on) @ V_GS = -4.5 V	0.122 Ω - Enables <150 mW conduction loss at 1.2 A, critical for thermal budget in handheld devices
I_D (continuous)	1.2 A @ T_A = 25 °C - Sufficient for USB-powered peripherals and display backlight control
V_GS(th)	-0.3 to -1.0 V - Ensures reliable turn-on with 1.8 V logic outputs, eliminating external gate drivers
Q_g (total)	5.91 nC @ V_GS = -4.5 V - Supports fast switching with low drive power in battery-operated systems
T_J range	-55 to +150 °C - Validated for operation across industrial and extended consumer temperature ranges
P_D (max)	0.236 W @ T_A = 25 °C - Matches thermal limits of SC-89 package on 1" × 1" FR4 board

Pinout & Package

SC-89 (6-lead) surface-mount package with exposed drain pads for thermal dissipation; lead-free and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Internally connected drain terminals - provide parallel current paths and enhanced thermal conduction to PCB copper
3	Gate (G)	Control terminal - accepts logic-level negative voltage to enable channel conduction
6	Source (S)	Reference node for gate drive and load return path - tied to system ground or battery positive depending on high-side configuration

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) and gate charge vs. planar MOSFETs at same die size, improving efficiency in portable loads
100 % R_g tested	Guarantees gate resistance between 9.8 Ω and 14.7 Ω - ensures consistent switching timing and EMI behavior
Halogen-free construction	Meets IEC 61249-2-21 - supports environmentally compliant manufacturing and end-of-life processing
Low V_GS(th) distribution	-0.3 V min to -1.0 V max - allows robust turn-on margin with 1.8 V/2.5 V GPIO, reducing risk of partial conduction

Applications

Smartphone Power Management	USB-C Port Protection
Use Scenario: Isolating battery voltage from peripheral circuits during sleep mode to minimize quiescent current. IC Role / Device Role: High-side load switch controlling VBUS or PMIC rail sequencing. Use Value: 0.122 Ω R_DS(on) limits dropout to <150 mV at 1.2 A, preserving system voltage headroom.	Use Scenario: Preventing backfeed from downstream devices into host VBUS when disconnected. IC Role / Device Role: Reverse-current blocking switch placed between USB controller and connector. Use Value: Body diode V_SD = 0.8–1.2 V ensures low-loss forward conduction while blocking reverse current up to -8 V.
Wireless Headset Battery Switching	IoT Sensor Node Power Gating
Use Scenario: Enabling/disabling charging circuitry during firmware updates to avoid interference. IC Role / Device Role: Logic-controlled isolation switch between Li-ion cell and charging IC. Use Value: -1.0 V max V_GS(th) guarantees full enhancement using MCU's 1.8 V GPIO, eliminating level shifter.	Use Scenario: Cutting power to environmental sensors between measurement cycles to extend battery life. IC Role / Device Role: Low-quiescent-load switch in always-on monitoring subsystems. Use Value: IDSS ≤ -1 nA at TJ = 25 °C ensures sub-100 nA leakage, critical for multi-year coin-cell operation.

Smartphone Power Management

USB-C Port Protection

Use Scenario: Isolating battery voltage from peripheral circuits during sleep mode to minimize quiescent current.

IC Role / Device Role: High-side load switch controlling VBUS or PMIC rail sequencing.

Use Value: 0.122 Ω R_DS(on) limits dropout to <150 mV at 1.2 A, preserving system voltage headroom.

Use Scenario: Preventing backfeed from downstream devices into host VBUS when disconnected.

IC Role / Device Role: Reverse-current blocking switch placed between USB controller and connector.

Use Value: Body diode V_SD = 0.8–1.2 V ensures low-loss forward conduction while blocking reverse current up to -8 V.

Wireless Headset Battery Switching

IoT Sensor Node Power Gating

Use Scenario: Enabling/disabling charging circuitry during firmware updates to avoid interference.

IC Role / Device Role: Logic-controlled isolation switch between Li-ion cell and charging IC.

Use Value: -1.0 V max V_GS(th) guarantees full enhancement using MCU's 1.8 V GPIO, eliminating level shifter.

Use Scenario: Cutting power to environmental sensors between measurement cycles to extend battery life.

IC Role / Device Role: Low-quiescent-load switch in always-on monitoring subsystems.

Use Value: IDSS ≤ -1 nA at TJ = 25 °C ensures sub-100 nA leakage, critical for multi-year coin-cell operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1061X-T1-GE3	R_DS(on) = 0.095 Ω @ -4.5 V; higher 1.5 A I_D; identical SC-89 package	Supports higher current loads but requires tighter thermal design due to increased power density	Select when >1.2 A peak load current is required and board layout allows for marginally higher thermal rise
DMN2053LSD-13	Higher V_DS (-20 V); R_DS(on) = 0.145 Ω @ -4.5 V; different TSOP-6 footprint	Not drop-in compatible - requires PCB redesign; suited for systems needing wider voltage margin	Choose only if system must withstand transient overvoltage beyond -8 V and layout revision is feasible

Compared with SI1051X-T1-GE3, Si1061X-T1-GE3 offers lower on-resistance for higher efficiency at 1.5 A, while DMN2053LSD-13 trades off footprint compatibility for extended voltage ruggedness - neither is pin-compatible, requiring layout validation before substitution.

Availability

SI1051X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and IoT sensor node power gating requiring stable component supply and long-term production continuity.

Supply support for SI1051X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs discrete semiconductors with emphasis on power efficiency, reliability, and miniaturization for high-volume electronic systems.

The Si1051X series targets ultra-compact, low-voltage load switching in portable and battery-powered equipment, prioritizing logic-level drivability and halogen-free compliance.

FAQ

What is the maximum continuous drain current rating for SI1051X-T1-GE3 at 70 °C ambient?

The SI1051X-T1-GE3 supports 0.97 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package on standard FR4; actual achievable current depends on PCB copper area and airflow. The SI1051X-T1-GE3 maintains safe operation within its 150 °C junction limit under these conditions.

Does SI1051X-T1-GE3 support 1.8 V logic-level gate drive?

Yes, SI1051X-T1-GE3 supports 1.8 V logic-level gate drive: its gate threshold voltage V_GS(th) ranges from -0.3 V to -1.0 V, ensuring full enhancement at V_GS = -1.8 V. At that bias, R_DS(on) is 0.198 Ω (typical) at -0.50 A, enabling use without level shifters in modern low-voltage microcontrollers. The SI1051X-T1-GE3 is specifically characterized for this operating condition.

What is the thermal resistance junction-to-ambient for SI1051X-T1-GE3 under steady-state conditions?

The SI1051X-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 650 °C/W under steady-state conditions on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes no additional heatsinking; adding copper pour or thermal vias can reduce effective R_thJA. The SI1051X-T1-GE3 datasheet specifies this as the worst-case limit for reliability modeling.

Is SI1051X-T1-GE3 suitable for reverse-current blocking in USB applications?

Yes, SI1051X-T1-GE3 is suitable for reverse-current blocking in USB applications: its integrated body diode has V_SD = 0.8–1.2 V at -1.0 A and supports bidirectional current flow. When configured as a high-side switch with source tied to VBUS, it blocks reverse current up to -8 V. The SI1051X-T1-GE3 body diode parameters are fully characterized in the Drain-Source Body Diode Characteristics section.

What marking code appears on the top of the SI1051X-T1-GE3 package?

The SI1051X-T1-GE3 is marked with "2 XX" on the top surface, where "XX" represents the lot traceability and date code. The "2" is the part number code identifying the Si1051X family. This marking aligns with Vishay's standard SC-89 labeling scheme and is visible in the top-view diagram of the official datasheet (Document Number: 74479).

SI1051X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 122mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.45 nC @ 5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1051X-T1-GE3 FAQ

1.How can I place an order for SI1051X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1051X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1051X-T1-GE3 reliable?

The price and inventory of SI1051X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1051X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1051X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1051X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1051X-T1-GE3?

SI1051X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1051X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1051X-T1-GE3?

For technical support, including SI1051X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1051X-T1-GE3 requirements.

6.How does Aetrix verify that SI1051X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1051X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1051X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1051X-T1-GE3?

All SI1051X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1051X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1051X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1051X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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