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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1054X-T1-E3

Name: SI1054X-T1-E3
Brand: Vishay Siliconix
SKU: SI1054X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1054X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1054X-T1-E3.pdf

Description:: MOSFET N-CH 12V 1.32A SC89-6

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Product details

Overview

SI1054X-T1-E3 from Vishay Siliconix is an N-channel 12 V (D-S) TrenchFET® power MOSFET in SC-89 package, rated for 1.32 A continuous drain current at 25 °C, with R_DS(on) = 0.095 Ω at V_GS = 4.5 V and 1.32 A, optimized for low-voltage load switching in portable electronics.

For engineers reviewing the SI1054X-T1-E3 datasheet, SI1054X-T1-E3 pinout, SI1054X-T1-E3 application, or SI1054X-T1-E3 equivalent, key selection criteria include its 12 V V_DS, sub-1 V gate threshold (0.4–1.0 V), 5.25 nC total gate charge at 4.5 V, 480 pF input capacitance, and SC-89 thermal resistance of 540 °C/W under steady-state conditions.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance at logic-level gate drive voltages down to 1.8 V, enabling direct interface with 1.8 V, 2.5 V, and 3.3 V microcontrollers without level-shifting. Its 0.88 A capability at V_GS = 1.8 V supports ultra-low-power wake-up and standby switching.

The device integrates a source-drain body diode with 0.8–1.2 V forward voltage at 1.0 A and 19.3–28.95 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in compact DC-DC and battery-protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum drain-source blocking voltage; suitable for single-cell Li-ion (≤4.2 V) and 5 V rail protection
R_DS(on)	0.095 Ω at V_GS = 4.5 V, I_D = 1.32 A - Enables ≤125 mW conduction loss at full rated current
I_D (continuous)	1.32 A at T_A = 25 °C - Validated on 1" × 1" FR4 board; derates to 1.05 A at 70 °C ambient
Q_g	5.25 nC at V_GS = 4.5 V - Low gate charge enables fast switching with minimal driver power overhead
C_iss	480 pF at V_DS = 6 V - Predictable input capacitance for stable gate drive design and EMI estimation
V_GS(th)	0.4–1.0 V - Ensures reliable turn-on with 1.8 V logic outputs and low-voltage MCU GPIOs
T_J range	−55 to +150 °C - Supports operation in extended industrial and portable environments

Pinout & Package

SC-89 (6-lead) surface-mount package with exposed drain pads for thermal enhancement; footprint compatible with JEDEC MO-203-AB standard.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (D)	Drain	Four parallel drain terminals connected to internal die drain metallization and exposed paddle; primary current path and thermal conduction path to PCB
3 (G)	Gate	Single gate input; requires <100 nA leakage control; driven directly by low-voltage logic
6 (S)	Source	Source reference node; connects to system ground or load return; used for body diode cathode

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.095 Ω R_DS(on) at 4.5 V gate drive while maintaining robust 12 V breakdown margin
100 % R_g tested	Guarantees gate resistance between 3.5 Ω and 5.25 Ω - critical for predictable switching timing and EMI control
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated consumer and medical designs
Low V_GS(th) distribution	0.4–1.0 V threshold ensures consistent turn-on across temperature and process variation without external biasing

Applications

Smartphone Power Management	Wireless Headset Battery Protection
Use Scenario: Isolating main battery from USB charging circuit during hot-plug events to prevent backfeed and overvoltage. IC Role / Device Role / Timing Role: Low-side load switch controlling battery-to-charger path; activated only during safe insertion window. Use Value: 1.32 A rating and 0.095 Ω R_DS(on) minimize voltage drop and heat rise during 500 mA–1 A charging currents.	Use Scenario: Enabling/disabling battery connection to Bluetooth SoC during sleep/wake cycles to reduce quiescent current. IC Role / Device Role / Timing Role: High-efficiency power gate between Li-ion cell and PMIC; controlled by 1.8 V GPIO. Use Value: Sub-1 V V_GS(th) and 0.114 Ω R_DS(on) at 1.8 V allow direct MCU control with <1 µA gate leakage.
Fitness Tracker Load Switching	Portable Medical Sensor Module
Use Scenario: Disconnecting display backlight and sensor array when motion detection is inactive to extend battery life. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power switch managed by ARM Cortex-M0+ core. Use Value: 5.25 nC Q_g enables <10 µs turn-on with 10 kΩ pull-up, minimizing transition losses in duty-cycled operation.	Use Scenario: Isolating analog front-end (AFE) supply from main MCU domain to suppress digital noise coupling. IC Role / Device Role / Timing Role: Low-noise, low-leakage isolation switch placed between LDO output and AFE VDD. Use Value: 1 nA I_DSS at 12 V and 100 nA I_GSS preserve signal integrity and offset stability in µV-level measurements.

Smartphone Power Management

Wireless Headset Battery Protection

Use Scenario: Isolating main battery from USB charging circuit during hot-plug events to prevent backfeed and overvoltage.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery-to-charger path; activated only during safe insertion window.

Use Value: 1.32 A rating and 0.095 Ω R_DS(on) minimize voltage drop and heat rise during 500 mA–1 A charging currents.

Use Scenario: Enabling/disabling battery connection to Bluetooth SoC during sleep/wake cycles to reduce quiescent current.

IC Role / Device Role / Timing Role: High-efficiency power gate between Li-ion cell and PMIC; controlled by 1.8 V GPIO.

Use Value: Sub-1 V V_GS(th) and 0.114 Ω R_DS(on) at 1.8 V allow direct MCU control with <1 µA gate leakage.

Fitness Tracker Load Switching

Portable Medical Sensor Module

Use Scenario: Disconnecting display backlight and sensor array when motion detection is inactive to extend battery life.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power switch managed by ARM Cortex-M0+ core.

Use Value: 5.25 nC Q_g enables <10 µs turn-on with 10 kΩ pull-up, minimizing transition losses in duty-cycled operation.

Use Scenario: Isolating analog front-end (AFE) supply from main MCU domain to suppress digital noise coupling.

IC Role / Device Role / Timing Role: Low-noise, low-leakage isolation switch placed between LDO output and AFE VDD.

Use Value: 1 nA I_DSS at 12 V and 100 nA I_GSS preserve signal integrity and offset stability in µV-level measurements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1061X-T1-E3	Higher V_DS (20 V), higher R_DS(on) (0.125 Ω @ 4.5 V), same SC-89 package and pinout	Better suited for dual-cell or 12 V auxiliary rails; less optimal for 1.8 V drive due to higher V_GS(th) min (0.6 V)	Select when higher voltage margin is required and gate drive ≥2.5 V is available
DMN10H7TSE-7	10 V V_DS, lower R_DS(on) (0.075 Ω @ 4.5 V), SOT-563 package (5-pin, different pinout)	Smaller footprint but incompatible pin mapping; lacks 1.8 V drive capability (V_GS(th) min = 0.8 V)	Choose for space-constrained designs where 10 V rating suffices and layout revision is acceptable

Compared with SI1054X-T1-E3, Si1061X-T1-E3 offers greater voltage headroom at the cost of higher on-resistance and reduced low-V_GS drive margin, while DMN10H7TSE-7 trades package compatibility and ultra-low-threshold operation for slightly better conduction efficiency in 10 V systems.

Availability

SI1054X-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery protection, and fitness tracker load switching requiring stable component supply and lead-free compliance.

Supply support for SI1054X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on high reliability and power efficiency.

The Si1054X series belongs to Vishay's logic-level TrenchFET® portfolio, engineered specifically for battery-powered portable devices demanding ultra-low gate drive voltage, minimal quiescent loss, and compact SC-89 packaging.

FAQ

What is the maximum continuous drain current for SI1054X-T1-E3 at 70 °C ambient?

The SI1054X-T1-E3 supports 1.05 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board, per the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its 540 °C/W junction-to-ambient resistance under steady-state conditions. The SI1054X-T1-E3 must be used within this limit to ensure long-term reliability and avoid thermal runaway.

Does SI1054X-T1-E3 support 1.8 V logic-level gate drive?

Yes, the SI1054X-T1-E3 is fully characterized for 1.8 V gate drive: R_DS(on) = 0.114 Ω at V_GS = 1.8 V and I_D = 0.88 A, with V_GS(th) guaranteed between 0.4 V and 1.0 V. This allows direct interface with 1.8 V microcontroller GPIOs without external level shifters, making the SI1054X-T1-E3 ideal for ultra-low-power portable applications.

What is the total gate charge (Q_g) of SI1054X-T1-E3 at 4.5 V gate drive?

The SI1054X-T1-E3 has a typical total gate charge of 5.25 nC at V_GS = 4.5 V, V_DS = 6 V, and I_D = 1.32 A. This low Q_g value enables fast switching transitions with minimal driver power consumption, reducing dynamic losses in high-frequency load-switching applications using the SI1054X-T1-E3.

Is SI1054X-T1-E3 halogen-free and RoHS-compliant?

Yes, the SI1054X-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with the EU RoHS Directive 2002/95/EC. The "-E3" suffix explicitly denotes lead (Pb)-free and halogen-free construction, verified through material declarations and manufacturing process controls - a requirement for consumer electronics and medical devices sold in regulated markets.

What is the thermal resistance (R_thJA) of SI1054X-T1-E3 under steady-state conditions?

The SI1054X-T1-E3 has a maximum junction-to-ambient thermal resistance of 650 °C/W under steady-state conditions on a standard 1" × 1" FR4 board, with a typical value of 540 °C/W. This R_thJA value determines the allowable power dissipation before exceeding the 150 °C maximum junction temperature - a critical parameter for thermal design when using the SI1054X-T1-E3 in enclosed portable enclosures.

SI1054X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 1.32A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 1.32A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.57 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1054X-T1-E3 FAQ

1.How can I place an order for SI1054X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1054X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1054X-T1-E3 reliable?

The price and inventory of SI1054X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1054X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1054X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1054X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1054X-T1-E3?

SI1054X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1054X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1054X-T1-E3?

For technical support, including SI1054X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1054X-T1-E3 requirements.

6.How does Aetrix verify that SI1054X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1054X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1054X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1054X-T1-E3?

All SI1054X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1054X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1054X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1054X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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