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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1054X-T1-GE3

Name: SI1054X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1054X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1054X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1054X-T1-GE3.pdf

Description:: MOSFET N-CH 12V 1.32A SC89-6

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Product details

Overview

SI1054X-T1-GE3 from Vishay Siliconix is an N-channel 12 V (D-S) TrenchFET® power MOSFET in SC-89 package, rated for 1.32 A continuous drain current at 25 °C, with R_DS(on) = 0.095 Ω at V_GS = 4.5 V and optimized for low-voltage load switching in portable devices.

For engineers reviewing the SI1054X-T1-GE3 datasheet, SI1054X-T1-GE3 pinout, SI1054X-T1-GE3 application, or SI1054X-T1-GE3 equivalent, key selection criteria include its 12 V V_DS, sub-1 V gate threshold, 5.25 nC total gate charge, thermal resistance of 540 °C/W (steady state), and halogen-free RoHS-compliant construction.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance at logic-level gate drive voltages down to 1.8 V, enabling direct interface with 1.8 V, 2.5 V, and 3.3 V microcontroller GPIOs. Its 6-pin SC-89 package integrates three parallel drain terminals for enhanced current handling and thermal performance.

The device features 100 % R_g tested gate resistance (3.5–5.25 Ω), specified body diode recovery (t_rr = 19.3–28.95 ns, Q_rr = 5.8–8.7 nC), and guaranteed V_GS(th) range of 0.4–1.0 V at 250 µA, supporting precise turn-on control in battery-powered systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum drain-source blocking voltage; suitable for single-cell Li-ion (≤4.2 V) and 5 V rail switching with margin.
R_DS(on)	0.095 Ω @ V_GS = 4.5 V, I_D = 1.32 A - Low conduction loss enables <125 mW dissipation at full rated current.
Q_g	5.25 nC @ V_GS = 4.5 V - Enables fast switching with minimal gate drive power in high-frequency load control.
V_GS(th)	0.4–1.0 V @ I_D = 250 µA - Ensures reliable turn-on from low-voltage logic without external level shifting.
R_thJA	540 °C/W (steady state) - Limits max junction temperature to 150 °C at 0.151 W dissipation on FR4 board.
I_D (cont)	1.32 A @ T_A = 25 °C - Continuous current rating defined under standard JEDEC test board conditions.
C_iss	480 pF @ V_DS = 6 V - Input capacitance impacts gate drive strength requirements and EMI behavior in switching transitions.

Pinout & Package

SC-89 (6-lead) surface-mount package with exposed drain paddle for thermal enhancement; dimensions: 2.0 mm × 1.25 mm × 0.95 mm (L × W × H). Three drain pins (1, 4, 5) are internally connected to maximize current capacity and reduce package inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, 4, 5	Drain (D)	Three parallel drain terminals share current path; connected to exposed thermal pad for improved heat transfer to PCB.
2	Gate (G)	Control terminal; requires ≤±8 V drive; low input capacitance enables efficient driving from low-power MCUs.
3	Source (S)	Power return node; referenced to system ground; used for current sensing and feedback in load-switch configurations.
6	Drain (D)	Fourth drain connection; completes symmetrical layout for balanced current distribution and reduced parasitic inductance.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.095 Ω R_DS(on) at 4.5 V gate drive, reducing conduction losses by >30 % vs. planar MOSFETs in same package.
100 % R_g tested	Guarantees gate resistance between 3.5 Ω and 5.25 Ω, ensuring predictable switching speed and EMI profile across production lots.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; eliminates brominated flame retardants without compromising thermal or mechanical reliability.
Low V_GS(th) variation	0.4–1.0 V range supports robust turn-on margin across temperature and process variation in battery-operated systems.
Optimized body diode	t_rr = 19.3 ns and Q_rr = 5.8 nC minimize reverse recovery losses during synchronous or bidirectional switching.

Applications

Smartphone Power Management	Wireless Headset Battery Protection
Use Scenario: Controlling power delivery to camera modules and USB peripherals in smartphones with dynamic voltage scaling. IC Role / Device Role / Timing Role: Load switch isolating 3.3 V or 1.8 V subsystems during sleep mode to reduce standby current. Use Value: 0.095 Ω R_DS(on) limits voltage drop to <130 mV at 1.3 A, preserving regulation margin while cutting leakage by >95 % vs. discrete FET alternatives.	Use Scenario: Enabling/disabling charging path and battery discharge in true wireless stereo (TWS) earbuds with space-constrained PCBs. IC Role / Device Role / Timing Role: Single-N-channel MOSFET configured as high-side load switch with integrated gate driver support. Use Value: SC-89 footprint (2.0 × 1.25 mm) saves >40 % board area vs. SOT-23; 1.32 A rating supports peak charging currents up to 1.2 A.
Portable Medical Sensor Hub	USB-C Accessory Detection
Use Scenario: Sequencing power to optical heart-rate sensors, accelerometers, and BLE radios in wearable health monitors. IC Role / Device Role / Timing Role: Low-threshold MOSFET used in discrete power sequencer circuit with MCU-controlled enable timing. Use Value: 0.4 V minimum V_GS(th) ensures turn-on even at depleted battery voltage (2.8 V), maintaining subsystem availability down to end-of-life.	Use Scenario: Detecting and isolating USB-C accessory insertion events in docking stations and multi-port hubs. IC Role / Device Role / Timing Role: Bidirectional switch managing CC line pull-up/pull-down configuration during USB PD negotiation. Use Value: Fast 5.5 ns turn-on delay and 13 ns rise time support <100 µs detection latency; low C_iss avoids signal integrity degradation on 300 kHz CC bus.

Smartphone Power Management

Wireless Headset Battery Protection

Use Scenario: Controlling power delivery to camera modules and USB peripherals in smartphones with dynamic voltage scaling.

IC Role / Device Role / Timing Role: Load switch isolating 3.3 V or 1.8 V subsystems during sleep mode to reduce standby current.

Use Value: 0.095 Ω R_DS(on) limits voltage drop to <130 mV at 1.3 A, preserving regulation margin while cutting leakage by >95 % vs. discrete FET alternatives.

Use Scenario: Enabling/disabling charging path and battery discharge in true wireless stereo (TWS) earbuds with space-constrained PCBs.

IC Role / Device Role / Timing Role: Single-N-channel MOSFET configured as high-side load switch with integrated gate driver support.

Use Value: SC-89 footprint (2.0 × 1.25 mm) saves >40 % board area vs. SOT-23; 1.32 A rating supports peak charging currents up to 1.2 A.

Portable Medical Sensor Hub

USB-C Accessory Detection

Use Scenario: Sequencing power to optical heart-rate sensors, accelerometers, and BLE radios in wearable health monitors.

IC Role / Device Role / Timing Role: Low-threshold MOSFET used in discrete power sequencer circuit with MCU-controlled enable timing.

Use Value: 0.4 V minimum V_GS(th) ensures turn-on even at depleted battery voltage (2.8 V), maintaining subsystem availability down to end-of-life.

Use Scenario: Detecting and isolating USB-C accessory insertion events in docking stations and multi-port hubs.

IC Role / Device Role / Timing Role: Bidirectional switch managing CC line pull-up/pull-down configuration during USB PD negotiation.

Use Value: Fast 5.5 ns turn-on delay and 13 ns rise time support <100 µs detection latency; low C_iss avoids signal integrity degradation on 300 kHz CC bus.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H7TIS-13	R_DS(on) = 0.085 Ω @ 4.5 V but higher Q_g = 7.2 nC; SC-70 package (smaller, no exposed drain).	Limited thermal capability (R_thJA = 620 °C/W); unsuitable for >1 A continuous operation on standard FR4.	Prefer SI1054X-T1-GE3 where thermal headroom or >1 A DC current is required.
AO3414	R_DS(on) = 0.055 Ω @ 4.5 V but V_GS(th) = 0.7–1.4 V; SOT-23 package with single drain pin.	Higher gate threshold reduces compatibility with 1.8 V logic; lower R_DS(on) only beneficial if layout allows larger copper pour.	Choose SI1054X-T1-GE3 when interfacing with sub-2.5 V controllers or requiring guaranteed turn-on below 0.8 V.

Compared with DMN10H7TIS-13 and AO3414, SI1054X-T1-GE3 delivers superior thermal performance via its triple-drain SC-89 layout and wider V_GS(th) margin, making it optimal for compact, battery-sensitive designs where reliability at low gate voltage and stable power delivery are critical.

Availability

SI1054X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery protection, and portable medical sensor hub applications requiring stable component supply and long-term manufacturability.

Supply support for SI1054X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1054X product line is engineered for ultra-compact, low-voltage load switching in space-constrained portable electronics, prioritizing low R_DS(on), logic-level gate drive, and halogen-free compliance.

FAQ

What is the maximum continuous drain current rating for SI1054X-T1-GE3 at 70 °C ambient?

The SI1054X-T1-GE3 supports 1.05 A continuous drain current at T_A = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations on standard 1" × 1" FR4 board; actual current capability depends on PCB copper area and airflow. The SI1054X-T1-GE3 maintains safe junction temperature below 150 °C under these conditions when operated within its specified power dissipation limits.

Does SI1054X-T1-GE3 support 1.8 V logic-level gate drive?

Yes, the SI1054X-T1-GE3 is fully characterized for 1.8 V gate drive: R_DS(on) = 0.114 Ω at V_GS = 1.8 V and I_D = 0.88 A. Its V_GS(th) range of 0.4–1.0 V ensures reliable turn-on even with marginal gate voltage margins. The SI1054X-T1-GE3 is therefore suitable for direct interface with 1.8 V microcontrollers without level-shifting circuitry.

What is the thermal resistance junction-to-ambient for SI1054X-T1-GE3 in steady-state operation?

The SI1054X-T1-GE3 has a maximum steady-state junction-to-ambient thermal resistance (R_thJA) of 650 °C/W, with a typical value of 540 °C/W when mounted on a 1" × 1" FR4 board. This value is critical for calculating maximum allowable power dissipation: P_D = (T_J(max) − T_A) / R_thJA. For the SI1054X-T1-GE3, this yields 0.151 W at T_A = 70 °C.

Is SI1054X-T1-GE3 suitable for reverse polarity protection circuits?

No, the SI1054X-T1-GE3 is an N-channel MOSFET intended for low-side or high-side load switching-not reverse polarity protection. Its body diode conducts from source to drain, so placing it in series with the positive rail would allow uncontrolled current flow during reverse connection. For reverse polarity protection, a P-channel device like SI1061X-T1-GE3 or dedicated protection IC is recommended instead of the SI1054X-T1-GE3.

What does the "GE3" suffix indicate in SI1054X-T1-GE3?

"GE3" denotes Vishay's green, lead (Pb)-free and halogen-free packaging standard compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. It specifies matte tin (Sn) termination finish, Pb-free solderability, and absence of brominated flame retardants. The SI1054X-T1-GE3 meets all environmental requirements for consumer electronics without sacrificing electrical or thermal performance.

SI1054X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 1.32A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 1.32A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.57 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1054X-T1-GE3 FAQ

1.How can I place an order for SI1054X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1054X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1054X-T1-GE3 reliable?

The price and inventory of SI1054X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1054X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1054X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1054X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1054X-T1-GE3?

SI1054X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1054X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1054X-T1-GE3?

For technical support, including SI1054X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1054X-T1-GE3 requirements.

6.How does Aetrix verify that SI1054X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1054X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1054X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1054X-T1-GE3?

All SI1054X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1054X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1054X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1054X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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