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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1056X-T1-E3

Name: SI1056X-T1-E3
Brand: Vishay Siliconix
SKU: SI1056X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1056X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1056X-T1-E3.pdf

Description:: MOSFET N-CH 20V 1.32A SC89-6

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Product details

Overview

SI1056X-T1-E3 from Vishay Siliconix is an N-channel 20 V TrenchFET® power MOSFET in SC-89 package, optimized for low-voltage load switching in portable electronics. It delivers R_DS(on) = 0.089 Ω at V_GS = 4.5 V, supports 1.32 A continuous drain current at T_A = 25 °C, and features 100 % R_g tested gate resistance for consistent switching performance.

For engineers reviewing the SI1056X-T1-E3 datasheet, SI1056X-T1-E3 pinout, SI1056X-T1-E3 application, or SI1056X-T1-E3 equivalent, key selection criteria include its 1.8 V logic-level gate drive capability, ultra-low thermal resistance (R_thJA = 540 °C/W), and halogen-free, RoHS-compliant construction suitable for space-constrained battery-powered designs.

Technical Context

This device employs trench-gate MOSFET technology to achieve enhanced conduction efficiency and fast switching with low gate charge (Q_g = 5.2 nC at V_GS = 4.5 V). Its gate threshold voltage (V_GS(th) = 0.35–0.95 V) enables reliable turn-on with weak drivers, while body diode characteristics (V_SD = 0.8–1.2 V at I_S = 1.0 A) support bidirectional current handling in compact DC/DC and power-path circuits.

The SC-89 6-lead package integrates three parallel drain terminals and dual source connections to minimize parasitic inductance and improve current sharing. Thermal design is constrained by a maximum junction-to-ambient resistance of 650 °C/W under steady-state conditions, requiring careful PCB copper area allocation for thermal management in high-duty-cycle applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 3.3 V and 5 V system rails
R_DS(on) @ V_GS = 4.5 V	0.089 Ω - Enables <115 mW conduction loss at 1.32 A, critical for thermal budget in handheld devices
I_D Continuous (T_A = 25 °C)	1.32 A - Sustained load current rating on standard 1" × 1" FR4 board
Q_g Total Gate Charge	5.2 nC @ V_GS = 4.5 V - Low drive power requirement for battery-operated GPIO-controlled switches
V_GS(th)	0.35–0.95 V - Ensures turn-on with weak-signal sources such as microcontroller I/O pins
R_thJA (Steady State)	650 °C/W - Defines minimum PCB copper area needed to maintain T_J ≤ 150 °C at full load
C_iss	400 pF - Limits high-frequency gate drive current and EMI generation in switching nodes

Pinout & Package

SC-89 (6-lead) surface-mount package with exposed drain pad for thermal enhancement. Pin 1–6 arranged as top-view D-D-G-D-D-S per Vishay marking diagram.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals reduce on-resistance and package inductance; connected internally to die drain metallization
3	Gate (G)	Single gate input with R_g = 3.8–5.7 Ω; requires no external gate resistor for typical 1.8–4.5 V logic drive
6	Source (S)	Source terminal tied to substrate; must be connected to ground plane for thermal and electrical reference

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.089 Ω R_DS(on) at 4.5 V drive while maintaining robust avalanche energy rating (E_AS = 3.2 mJ)
100 % R_g tested	Guarantees gate resistance between 3.8 Ω and 5.7 Ω, ensuring predictable turn-on timing and reduced gate driver stress
Logic-level gate drive	Operates fully enhanced down to V_GS = 1.8 V (R_DS(on) = 0.121 Ω), eliminating need for level-shifting circuitry
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for consumer electronics with strict material compliance requirements
Low Q_gd/Q_gs ratio	Q_gd = 0.71 nC, Q_gs = 0.83 nC - improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments

Applications

Smartphone Power Management	Wireless Headset Battery Protection
Use Scenario: Isolating backup battery from main PMIC during charging cycles to prevent reverse current flow. IC Role / Device Role / Timing Role: Low-side load switch controlling power path between Li-ion cell and system rail. Use Value: 0.089 Ω R_DS(on) minimizes voltage drop and self-heating, preserving battery runtime and enabling compact 1.6 mm × 1.6 mm footprint.	Use Scenario: Enabling/disabling Bluetooth audio ICs based on user presence detection via capacitive sensor. IC Role / Device Role / Timing Role: Logic-controlled power gate activated by MCU GPIO with 1.8 V output. Use Value: V_GS(th) as low as 0.35 V ensures reliable turn-on even with marginal I/O voltage margin, reducing firmware complexity.
USB-C Port Power Switching	Fitness Tracker Load Control
Use Scenario: Managing V_BUS delivery to USB-C sink devices during role negotiation and fault events. IC Role / Device Role / Timing Role: High-speed, low-loss power switch placed between USB PD controller and connector. Use Value: 5.2 nC Q_g allows sub-100 ns turn-on with minimal gate drive current, supporting rapid port reconfiguration.	Use Scenario: Cycling power to optical heart-rate sensor and accelerometer during sleep mode to extend battery life. IC Role / Device Role / Timing Role: Ultra-low-quiescent-current load switch controlled by real-time OS scheduler. Use Value: IDSS ≤ 1 µA at 20 V ensures negligible leakage current during 95 % duty-cycle sleep periods, extending weeks-long battery life.

Smartphone Power Management

Wireless Headset Battery Protection

Use Scenario: Isolating backup battery from main PMIC during charging cycles to prevent reverse current flow.

IC Role / Device Role / Timing Role: Low-side load switch controlling power path between Li-ion cell and system rail.

Use Value: 0.089 Ω R_DS(on) minimizes voltage drop and self-heating, preserving battery runtime and enabling compact 1.6 mm × 1.6 mm footprint.

Use Scenario: Enabling/disabling Bluetooth audio ICs based on user presence detection via capacitive sensor.

IC Role / Device Role / Timing Role: Logic-controlled power gate activated by MCU GPIO with 1.8 V output.

Use Value: V_GS(th) as low as 0.35 V ensures reliable turn-on even with marginal I/O voltage margin, reducing firmware complexity.

USB-C Port Power Switching

Fitness Tracker Load Control

Use Scenario: Managing V_BUS delivery to USB-C sink devices during role negotiation and fault events.

IC Role / Device Role / Timing Role: High-speed, low-loss power switch placed between USB PD controller and connector.

Use Value: 5.2 nC Q_g allows sub-100 ns turn-on with minimal gate drive current, supporting rapid port reconfiguration.

Use Scenario: Cycling power to optical heart-rate sensor and accelerometer during sleep mode to extend battery life.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-current load switch controlled by real-time OS scheduler.

Use Value: IDSS ≤ 1 µA at 20 V ensures negligible leakage current during 95 % duty-cycle sleep periods, extending weeks-long battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1061X-T1-E3	R_DS(on) = 0.045 Ω @ 4.5 V; higher 2.2 A I_D; same SC-89 package	Higher current capacity suits 5 V rail switching where thermal headroom exists	Select when lower conduction loss justifies increased cost and layout review for higher peak current transients
DMN2004LK-7	R_DS(on) = 0.095 Ω @ 4.5 V; 1.4 A I_D; SOT-563 package (same pinout but different thermal profile)	Compatible footprint but 700 °C/W R_thJA requires larger copper pour for equivalent thermal performance	Choose only if existing SOT-563 land pattern must be reused; verify thermal derating at full load

Compared with Si1061X-T1-E3 and DMN2004LK-7, the SI1056X-T1-E3 offers optimal balance of low gate charge, validated 1.8 V operation, and proven thermal behavior on FR4-making it preferred for tightly constrained, battery-sensitive portable systems where gate drive strength and leakage are prioritized over raw current rating.

Availability

SI1056X-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery protection, and USB-C port power switching requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI1056X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SI1056X-T1-E3 belongs to Vishay's TrenchFET® logic-level MOSFET family, engineered specifically for space-constrained, battery-powered portable electronics requiring efficient low-voltage switching with minimal external components.

FAQ

What is the maximum continuous drain current for SI1056X-T1-E3 at 70 °C ambient temperature?

The SI1056X-T1-E3 supports 1.05 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package on standard FR4; actual usable current depends on PCB copper area and airflow. The SI1056X-T1-E3 maintains R_DS(on) stability across this range due to its negative temperature coefficient.

Does SI1056X-T1-E3 support 1.8 V logic-level gate drive, and what is its R_DS(on) at that voltage?

Yes, the SI1056X-T1-E3 is fully characterized for 1.8 V gate drive: R_DS(on) = 0.093–0.121 Ω at I_D = 1.13 A and T_J = 25 °C. This enables direct interface with 1.8 V microcontrollers without level shifters. The SI1056X-T1-E3 achieves this via low-threshold trench architecture, with V_GS(th) guaranteed between 0.35 V and 0.95 V.

What is the total gate charge (Q_g) of SI1056X-T1-E3, and how does it impact switching efficiency?

The SI1056X-T1-E3 has Q_g = 5.2 nC (typical) at V_GS = 4.5 V and I_D = 1.32 A. This low value reduces gate driver power consumption and switching transition time, directly lowering dynamic losses in PWM or burst-mode applications. The SI1056X-T1-E3's Q_gd/Q_gs ratio of ~0.85 also enhances noise immunity during hard-switching events.

Is SI1056X-T1-E3 halogen-free and RoHS-compliant?

Yes, the SI1056X-T1-E3 is halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as confirmed in the Features section of Vishay document 73895. The "-E3" suffix denotes lead (Pb)-free and halogen-free construction. The SI1056X-T1-E3 meets environmental requirements for consumer electronics sold in EU, China, and Japan markets.

What is the safe operating area (SOA) limitation for SI1056X-T1-E3 in DC operation?

In DC operation, the SI1056X-T1-E3 SOA is limited by R_DS(on) at T_A = 25 °C, allowing up to ~1.32 A at V_DS ≤ 0.12 V. At higher V_DS, power dissipation (I²R) exceeds the 0.236 W maximum rating. The SI1056X-T1-E3 SOA curve shows DC boundary intersects 1.32 A at ~0.12 V and drops to ~0.3 A at 10 V, confirming its optimization for low-V_DS switching-not linear regulation.

SI1056X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.32A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 89mOhm @ 1.32A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1056X-T1-E3 FAQ

1.How can I place an order for SI1056X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1056X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1056X-T1-E3 reliable?

The price and inventory of SI1056X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1056X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1056X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1056X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1056X-T1-E3?

SI1056X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1056X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1056X-T1-E3?

For technical support, including SI1056X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1056X-T1-E3 requirements.

6.How does Aetrix verify that SI1056X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1056X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1056X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1056X-T1-E3?

All SI1056X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1056X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1056X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1056X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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