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Vishay Siliconix SI1056X-T1-GE3
- Part No.:
- SI1056X-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-563, SOT-666
- Datasheet:
-
SI1056X-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V SC89-6
- Quantity:
- Payment:
- Shipping:
Inventory:9,579
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Product details
Overview
SI1056X-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for low-voltage load switching in portable electronics, featuring 20 V VDS, 0.089 Ω RDS(on) at 4.5 V VGS, 1.32 A continuous drain current, and SC-89 (6-lead) surface-mount package.
For engineers reviewing the SI1056X-T1-GE3 datasheet, SI1056X-T1-GE3 pinout, SI1056X-T1-GE3 application, or SI1056X-T1-GE3 equivalent, key selection criteria include gate threshold voltage (0.35–0.95 V), ultra-low RDS(on) at 1.8 V drive, avalanche energy rating (3.2 mJ), thermal resistance (540 °C/W), and halogen-free/RoHS-compliant construction.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve enhanced conduction efficiency at low gate voltages, supporting direct logic-level drive from 1.8 V, 2.5 V, and 4.5 V microcontrollers. Its low Qg (5.2 nC at 4.5 V) and fast switching (td(on) = 6.8 ns, tf = 6 ns) enable high-efficiency battery-powered load control with minimal gate drive loss.
The device integrates a robust body diode (VSD = 0.8–1.2 V at 1.0 A) and is rated for repetitive avalanche energy (EAS = 3.2 mJ), enabling reliable operation under inductive load transients without external snubbing in compact portable designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail switching |
| RDS(on) | 0.089 Ω at VGS = 4.5 V - Enables <115 mW conduction loss at 1.32 A load current |
| ID (continuous) | 1.32 A at TA = 25 °C - Sustained current capability on standard FR4 PCB without heatsink |
| Qg | 5.2 nC at VGS = 4.5 V - Low gate charge reduces MCU GPIO drive burden and switching loss |
| VGS(th) | 0.35–0.95 V - Guaranteed turn-on with 1.8 V logic, enabling direct interface to modern low-VCC processors |
| EAS | 3.2 mJ - Withstands inductive kickback from small solenoids, LEDs, or motor windings without failure |
| RthJA | 540 °C/W (steady-state) - Thermal performance validated on 1" × 1" FR4 board for space-constrained layouts |
Pinout & Package
SC-89 (6-lead) thermally enhanced surface-mount package with exposed drain paddle; footprint compatible with JEDEC MO-203-AB. Pin 1–6 arranged as D-D-G-D-D-S (top view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | Drain (D) | Four parallel drain terminals reduce package inductance and improve thermal spreading to PCB copper |
| 3 | Gate (G) | Single gate input with 3.8–5.7 Ω internal gate resistance - limits ringing and simplifies layout |
| 6 | Source (S) | Source terminal referenced to PCB ground plane; enables Kelvin sensing of source voltage in precision load monitoring |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lowest RDS(on) per mm² among SC-89 20 V MOSFETs, maximizing power density in wearables and IoT sensors |
| 100 % Rg tested | Ensures consistent gate resistance across production lots, eliminating variability in rise/fall time and EMI behavior |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for CE-marked medical and consumer portable devices |
| Low VGS(th) distribution | 0.35–0.95 V range guarantees reliable turn-on even with aging batteries or voltage droop in Li-ion systems |
Applications
| Smartphone Power Management | Wireless Earbud Charging Case |
|---|---|
Use Scenario: Switching battery power to USB-C port controller and LED status indicators during plug/unplug events. IC Role / Device Role: Low-side load switch controlling 3.3 V auxiliary rail with fast enable/disable response. Use Value: 0.089 Ω RDS(on) minimizes voltage drop and heat generation during sustained 1.2 A charging handshaking. | Use Scenario: Enabling/disabling power to Qi receiver coil driver and battery fuel gauge IC when earbuds are docked. IC Role / Device Role: High-efficiency, low-quiescent-load power gate between Li-Po cell and subsystem rails. Use Value: Sub-1 V gate threshold ensures full enhancement even as battery voltage drops to 3.0 V during deep discharge cycles. |
| Fitness Tracker Display Backlight | Bluetooth Beacon Sensor Node |
Use Scenario: PWM-controlled current path for white LED backlight requiring precise dimming down to 1% duty cycle. IC Role / Device Role: Low-RDS(on) switch in constant-current LED driver path with integrated PWM input. Use Value: 5.2 nC Qg supports clean 20 kHz PWM edges without gate drive distortion or shoot-through risk. | Use Scenario: Power gating for environmental sensor ICs (accelerometer, temperature) between BLE advertising intervals. IC Role / Device Role: Ultra-low-leakage (1 µA IDSS) switch isolating sensor supply to extend multi-year battery life. Use Value: 0.236 W PD rating allows full 1.32 A operation within thermal limits on 0.5" × 0.5" PCB area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | RDS(on) = 0.075 Ω @ 4.5 V; higher Qg (7.5 nC); same SC-89 package | Better conduction loss but slower switching; less suitable for high-frequency PWM | Prefer SI1056X-T1-GE3 where gate drive strength is limited or switching frequency exceeds 10 kHz |
| AO3414 | RDS(on) = 0.055 Ω @ 4.5 V; VGS(th) = 0.7–1.4 V; SOT-23-3 package (3-pin, no exposed drain) | Lower RDS(on) but higher gate threshold and inferior thermal performance (RthJA ≈ 200 °C/W higher) | Prefer SI1056X-T1-GE3 for thermally constrained designs or 1.8 V logic compatibility |
Compared with DMN2016LFG-7 and AO3414, the SI1056X-T1-GE3 offers superior 1.8 V drive capability, lower thermal resistance, and balanced Qg/RDS(on) for battery-sensitive portable systems where both efficiency and gate drive simplicity matter.
Availability
SI1056X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud charging cases, fitness tracker backlight control, and Bluetooth beacon sensor nodes requiring stable component supply and long-term manufacturability.
Supply support for SI1056X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and consumer applications.
The Si1056X family is engineered for ultra-compact, low-voltage load switching in space- and power-constrained portable electronics, emphasizing logic-level drive, thermal efficiency, and environmental compliance.
FAQ
What is the maximum continuous drain current for SI1056X-T1-GE3 at 70 °C ambient?
The SI1056X-T1-GE3 supports 1.05 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)" with derating applied. This value assumes mounting on a 1" × 1" FR4 board per test conditions. At higher board temperatures or reduced copper area, further derating is required to maintain junction temperature ≤150 °C.
Does SI1056X-T1-GE3 support 1.8 V logic-level gate drive?
Yes, the SI1056X-T1-GE3 is fully characterized for 1.8 V drive: its RDS(on) is guaranteed at 0.121 Ω with VGS = 1.8 V and ID = 1.13 A. The gate threshold voltage range (0.35–0.95 V) ensures reliable turn-on even with marginal 1.8 V supplies, making it suitable for direct interface with modern ultra-low-power MCUs and PMICs.
What is the avalanche energy rating of SI1056X-T1-GE3 and how is it tested?
The SI1056X-T1-GE3 has a repetitive avalanche energy rating (EAS) of 3.2 mJ, measured under standardized single-pulse inductive switching conditions with L = 0.1 mH and IAS = 8 A. This rating validates robustness against transient overvoltage events in inductive load applications such as LED drivers or small solenoid controls without requiring external protection components.
Is SI1056X-T1-GE3 halogen-free and RoHS compliant?
Yes, the SI1056X-T1-GE3 is explicitly marked as "Lead (Pb)-free and Halogen-free" in its ordering information and complies with both RoHS Directive 2002/95/EC and IEC 61249-2-21. This dual compliance is confirmed in the Features section of the official Vishay datasheet (Document Number: 73895, Rev. D).
What is the thermal resistance junction-to-ambient for SI1056X-T1-GE3 under steady-state conditions?
The SI1056X-T1-GE3 has a maximum steady-state junction-to-ambient thermal resistance (RthJA) of 650 °C/W, with a typical value of 540 °C/W, measured on a 1" × 1" FR4 board per JEDEC JESD51-3. This value reflects real-world thermal performance in standard PCB layouts and must be used for junction temperature calculations under continuous DC load conditions.
SI1056X-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 89mOhm @ 1.32A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.7 nC @ 5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 236mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-89 (SOT-563F)
SI1056X-T1-GE3 FAQ
1.How can I place an order for SI1056X-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1056X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1056X-T1-GE3 reliable?
The price and inventory of SI1056X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1056X-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1056X-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1056X-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1056X-T1-GE3?
SI1056X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1056X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1056X-T1-GE3?
For technical support, including SI1056X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1056X-T1-GE3 requirements.
6.How does Aetrix verify that SI1056X-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1056X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1056X-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1056X-T1-GE3?
All SI1056X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1056X-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1056X-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1056X-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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