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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1067X-T1-E3

Name: SI1067X-T1-E3
Brand: Vishay Siliconix
SKU: SI1067X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1067X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1067X-T1-E3.pdf

Description:: MOSFET P-CH 20V 1.06A SC89-6

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Product details

Overview

SI1067X-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.150 Ω R_DS(on) at V_GS = -4.5 V, and -1.06 A continuous drain current at T_A = 25 °C. It serves as a low-voltage load switch in portable electronics with integrated body diode and halogen-free, RoHS-compliant construction.

For engineers reviewing the SI1067X-T1-E3 datasheet, SI1067X-T1-E3 pinout, SI1067X-T1-E3 application, or SI1067X-T1-E3 equivalent, key selection criteria include its -20 V V_DS, sub-0.17 Ω on-resistance down to V_GS = -1.8 V, 6.0 nC typical gate charge, SC-89 package thermal resistance (540 °C/W), and suitability for space-constrained battery-powered load switching.

Technical Context

This MOSFET operates in enhancement mode with a negative gate threshold voltage (-0.45 to -0.95 V) and exhibits stable R_DS(on) over temperature due to its trench-based silicon structure. Its low gate charge (6.0–9.1 nC) and fast switching times (t_d(on) = 14–21 ns, t_f = 17–25.5 ns) support efficient PWM control in compact DC-DC and power management circuits.

The device integrates a source-drain body diode with V_SD = 0.8–1.2 V at I_S = -0.63 A and reverse recovery time t_rr = 12.8–19.2 ns, enabling bidirectional current handling in synchronous rectification or reverse-polarity protection topologies without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage battery-side switching
R_DS(on)	0.150 Ω @ V_GS = -4.5 V - Enables <150 mW conduction loss at 1.06 A
I_D (cont)	-1.06 A @ T_A = 25 °C - Sustained load current capability on FR4 board
Q_g	6.0 nC @ V_GS = -4.5 V - Low drive power requirement for microcontroller GPIO control
R_thJA	540 °C/W (steady state) - Thermal limit defines max power dissipation of 0.236 W at T_A = 25 °C
V_GS(th)	-0.45 to -0.95 V - Ensures turn-on with standard logic-level negative gate drive
C_iss	375 pF - Input capacitance compatible with low-power gate drivers

Pinout & Package

Package: SC-89 (6-lead surface-mount, 1.6 mm × 1.6 mm × 0.55 mm profile). Pin assignment confirmed per Vishay Document 74322 Rev. D top-view diagram.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (D)	Drain	Common high-side connection point; electrically tied internally for low-inductance current path
3 (G)	Gate	Control terminal; requires negative V_GS for channel enhancement
6 (S)	Source	Reference node for gate drive and load return; connects to system ground or battery negative

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) and higher cell density vs. planar MOSFETs in same footprint
100 % R_g tested	Guarantees gate resistance between 8.8–13.2 Ω, critical for predictable switching speed and EMI control
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment
Low V_GS(th) range	Supports reliable turn-on using -2.5 V or -4.5 V logic rails without level-shifting circuitry
SC-89 thermal performance	540 °C/W R_thJA allows operation up to 150 °C junction temperature with minimal PCB copper area

Applications

USB Power Delivery Switching	Smartphone Battery Protection
Use Scenario: Controlling VBUS path in USB-C port controllers where reverse-current blocking and low quiescent power are required. IC Role / Device Role / Timing Role: High-side load switch managing power delivery direction and fault isolation. Use Value: 0.150 Ω R_DS(on) limits voltage drop to <160 mV at 1.06 A, preserving bus regulation margin.	Use Scenario: Isolating main Li-ion battery from system during charging or deep-sleep modes in handheld devices. IC Role / Device Role / Timing Role: P-channel switch enabling zero-current standby and polarity-reversal protection. Use Value: -0.95 V maximum V_GS(th) ensures full enhancement with common PMIC output voltages.
Wearable Sensor Power Gating	IoT Edge Node Load Control
Use Scenario: Cycling power to MEMS sensors or BLE radios to extend coin-cell battery life beyond 1 year. IC Role / Device Role / Timing Role: Low-leakage power switch activated by MCU GPIO with minimal drive strength. Use Value: IDSS ≤ -1 µA at V_DS = -20 V minimizes sleep-state battery drain.	Use Scenario: Managing auxiliary rail (e.g., 3.3 V sensor supply) in industrial wireless nodes subject to wide ambient temperature swings. IC Role / Device Role / Timing Role: Temperature-stable load switch operating across -55 to +150 °C junction range. Use Value: R_DS(on) variation <15% from -55 to +125 °C enables consistent efficiency in unheated enclosures.

USB Power Delivery Switching

Smartphone Battery Protection

Use Scenario: Controlling VBUS path in USB-C port controllers where reverse-current blocking and low quiescent power are required.

IC Role / Device Role / Timing Role: High-side load switch managing power delivery direction and fault isolation.

Use Value: 0.150 Ω R_DS(on) limits voltage drop to <160 mV at 1.06 A, preserving bus regulation margin.

Use Scenario: Isolating main Li-ion battery from system during charging or deep-sleep modes in handheld devices.

IC Role / Device Role / Timing Role: P-channel switch enabling zero-current standby and polarity-reversal protection.

Use Value: -0.95 V maximum V_GS(th) ensures full enhancement with common PMIC output voltages.

Wearable Sensor Power Gating

IoT Edge Node Load Control

Use Scenario: Cycling power to MEMS sensors or BLE radios to extend coin-cell battery life beyond 1 year.

IC Role / Device Role / Timing Role: Low-leakage power switch activated by MCU GPIO with minimal drive strength.

Use Value: IDSS ≤ -1 µA at V_DS = -20 V minimizes sleep-state battery drain.

Use Scenario: Managing auxiliary rail (e.g., 3.3 V sensor supply) in industrial wireless nodes subject to wide ambient temperature swings.

IC Role / Device Role / Timing Role: Temperature-stable load switch operating across -55 to +150 °C junction range.

Use Value: R_DS(on) variation <15% from -55 to +125 °C enables consistent efficiency in unheated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1029X-T1-E3	-20 V V_DS, 0.220 Ω R_DS(on) @ -4.5 V, 0.75 A I_D, same SC-89 package	Higher on-resistance and lower current rating; suitable only for sub-750 mA loads	Select when lower cost is prioritized over conduction loss and thermal margin
DMN2011UFG-7	-20 V V_DS, 0.125 Ω R_DS(on) @ -4.5 V, -2.0 A I_D, X1-DFN1006-3 package (smaller, 3-pin)	Higher current capacity but no integrated source terminal; requires external diode for bidirectional use	Choose for higher-current, space-constrained designs where body diode functionality is not required

Compared with SI1067X-T1-E3, Si1029X-T1-E3 trades 47% higher R_DS(on) for cost reduction, while DMN2011UFG-7 offers 17% lower on-resistance and double current rating in a smaller 3-pin DFN-but lacks the 6-pin SC-89's dedicated source and dual-drain layout for low-inductance layouts.

Availability

SI1067X-T1-E3 is available at Aetrix Electronics and suitable for portable medical monitors, USB-C accessory power management, and wearable health sensor subsystems requiring stable component supply, halogen-free compliance, and verified thermal performance on standard FR4 PCBs.

Supply support for SI1067X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1067X belongs to Vishay's TrenchFET® P-channel logic-level MOSFET family, engineered specifically for ultra-compact, low-voltage load switching in battery-powered consumer and portable industrial electronics.

FAQ

What is the maximum continuous drain current for SI1067X-T1-E3 at 70 °C ambient?

The SI1067X-T1-E3 supports -0.85 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with derating applied per thermal resistance. This reflects safe operation on a 1" × 1" FR4 board without forced airflow.

Does SI1067X-T1-E3 have a guaranteed gate resistance specification?

Yes, the SI1067X-T1-E3 undergoes 100 % R_g testing per Vishay's quality process, with a guaranteed gate resistance range of 8.8 Ω to 13.2 Ω at f = 1 MHz. This ensures consistent switching behavior and simplifies gate driver design without need for external series resistance tuning.

Can SI1067X-T1-E3 be used in reverse-polarity protection circuits?

Yes, the SI1067X-T1-E3 is suitable for reverse-polarity protection due to its P-channel configuration, integrated source-drain body diode (V_SD = 0.8–1.2 V), and ability to block -20 V. When placed in the high-side position with source tied to input and drain to load, it conducts only during correct polarity and blocks reverse voltage automatically.

What is the gate-to-source leakage current specification for SI1067X-T1-E3?

The SI1067X-T1-E3 specifies ±100 nA maximum gate-to-source leakage current (I_GSS) at V_DS = 0 V and V_GS = ±8 V. This low leakage supports stable gate biasing in high-impedance control circuits and prevents unintended turn-on during long-term storage or low-power sleep states.

Is SI1067X-T1-E3 compatible with lead-free reflow soldering processes?

Yes, the SI1067X-T1-E3 is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its marking code "X XX" and ordering suffix "-E3" explicitly denote lead (Pb)-free and halogen-free construction, and it withstands peak reflow temperatures up to 260 °C for 30 seconds as verified in Vishay's package reliability data.

SI1067X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.06A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 1.06A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.3 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 375 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1067X-T1-E3 FAQ

1.How can I place an order for SI1067X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1067X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1067X-T1-E3 reliable?

The price and inventory of SI1067X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1067X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1067X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1067X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1067X-T1-E3?

SI1067X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1067X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1067X-T1-E3?

For technical support, including SI1067X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1067X-T1-E3 requirements.

6.How does Aetrix verify that SI1067X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1067X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1067X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1067X-T1-E3?

All SI1067X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1067X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1067X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1067X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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