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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1069X-T1-GE3

Name: SI1069X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1069X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1069X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1069X-T1-GE3.pdf

Description:: MOSFET P-CH 20V 0.94A SC89-6

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Product details

Overview

SI1069X-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.184 Ω R_DS(on) at V_GS = -4.5 V, and -0.94 A continuous drain current at T_A = 25 °C. It serves as a low-power load switch in space-constrained portable electronics with halogen-free and RoHS-compliant packaging.

For engineers reviewing the SI1069X-T1-GE3 datasheet, SI1069X-T1-GE3 pinout, SI1069X-T1-GE3 application, or SI1069X-T1-GE3 equivalent, key selection criteria include its SC-89 (SOT-563F) 6-lead package, gate threshold voltage range (-0.6 V to -1.5 V), body diode forward voltage (-0.8 V to -1.2 V at -0.64 A), and thermal resistance (R_thJA = 540 °C/W steady-state).

Technical Context

This device operates as a single P-channel MOSFET with trench-based silicon architecture optimized for low gate charge (Q_g = 4.23 nC at V_GS = -4.5 V) and fast switching (t_d(on) = 19 ns, t_f = 7 ns). Its negative V_GS(th) enables direct logic-level control from 2.5 V or 3.3 V microcontrollers without level shifting.

The integrated source-drain body diode supports reverse-current paths in load-switch configurations, with verified reverse recovery time (t_rr = 19 ns) and charge (Q_rr = 6.65 nC) under dI/dt = 100 A/µs conditions. Thermal performance is characterized on 1" × 1" FR4 board per JEDEC JESD51-3.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage battery-side load switching
R_DS(on)	0.184 Ω at V_GS = -4.5 V - Enables <180 mW conduction loss at 0.94 A
I_D (cont)	-0.94 A at T_A = 25 °C - Suitable for sub-1 A portable device power rails
Q_g	4.23 nC at V_GS = -4.5 V - Supports efficient 1–10 MHz PWM control with minimal drive power
V_GS(th)	-0.6 V to -1.5 V - Ensures turn-on with standard 2.5 V/3.3 V GPIO without external bias
R_thJA	540 °C/W (steady-state) - Requires thermal pad or copper pour for >150 mW sustained dissipation
V_SD	-0.8 V to -1.2 V at I_S = -0.64 A - Defines forward drop in reverse-bias protection or OR-ing applications

Pinout & Package

SI1069X-T1-GE3 is housed in an SC-89 (SOT-563F) 6-lead surface-mount package measuring 1.60 mm × 1.60 mm × 0.55 mm, with exposed drain terminals for thermal enhancement and lead pitch of 0.50 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (D)	Drain	Four parallel drain connections tied internally; primary current path and thermal conduction node
3 (G)	Gate	Control terminal; requires ≤±12 V drive; 100% R_g tested (9–13.5 Ω)
6 (S)	Source	Reference node for gate drive and load return; connects to system ground or battery negative

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) and Q_g vs. planar MOSFETs in same footprint, improving efficiency in battery-powered systems
100 % R_g tested	Guarantees gate resistance between 9 Ω and 13.5 Ω, enabling predictable switching timing and drive circuit design
Halogen-free & RoHS compliant	Fulfills IEC 61249-2-21 and Directive 2002/95/EC requirements for environmentally regulated end equipment
SC-89 package with 4 drain leads	Maximizes thermal dissipation via multiple drain pads while maintaining ultra-small 1.6 mm × 1.6 mm PCB area

Applications

Smartphone Power Management	Wireless Headset Battery Protection
Use Scenario: Isolating backup battery from main PMIC during charging cycles to prevent backfeed and leakage. IC Role / Device Role: Low-side load switch controlling battery discharge path with fast turn-off to meet UL/IEC safety shutdown timing. Use Value: 0.184 Ω R_DS(on) limits voltage drop to <175 mV at 0.94 A, preserving runtime; -1.5 V V_GS(th) ensures reliable turn-on from 2.5 V supervisor IC.	Use Scenario: Enabling/disabling charging current to Li-ion cell based on temperature and voltage feedback from fuel gauge IC. IC Role / Device Role: High-side P-channel switch placed between charger output and battery terminal. Use Value: Body diode V_SD = -0.8 V prevents reverse current flow during fault conditions; SC-89 footprint fits tight earbud PCB layouts.
USB-C Accessory Detection	Medical Wearable Sensor Power Gating
Use Scenario: Controlling VBUS power delivery to USB-C peripheral ports only when valid CC pin handshake is confirmed. IC Role / Device Role: Load switch isolating 5 V rail from downstream port circuitry until enumeration completes. Use Value: 4.23 nC Q_g allows clean 10 µs turn-on/turn-off transitions synchronized to USB PD policy engine signals.	Use Scenario: Powering down ECG/PPG sensor subsystems between measurement intervals to extend battery life in patch-style monitors. IC Role / Device Role: Ultra-low-quiescent-load switch disconnecting analog front-end from LDO output. Use Value: IDSS ≤ -1 µA at 25 °C and -10 µA at 85 °C ensures <100 nA total system standby current contribution.

Smartphone Power Management

Wireless Headset Battery Protection

Use Scenario: Isolating backup battery from main PMIC during charging cycles to prevent backfeed and leakage.

IC Role / Device Role: Low-side load switch controlling battery discharge path with fast turn-off to meet UL/IEC safety shutdown timing.

Use Value: 0.184 Ω R_DS(on) limits voltage drop to <175 mV at 0.94 A, preserving runtime; -1.5 V V_GS(th) ensures reliable turn-on from 2.5 V supervisor IC.

Use Scenario: Enabling/disabling charging current to Li-ion cell based on temperature and voltage feedback from fuel gauge IC.

IC Role / Device Role: High-side P-channel switch placed between charger output and battery terminal.

Use Value: Body diode V_SD = -0.8 V prevents reverse current flow during fault conditions; SC-89 footprint fits tight earbud PCB layouts.

USB-C Accessory Detection

Medical Wearable Sensor Power Gating

Use Scenario: Controlling VBUS power delivery to USB-C peripheral ports only when valid CC pin handshake is confirmed.

IC Role / Device Role: Load switch isolating 5 V rail from downstream port circuitry until enumeration completes.

Use Value: 4.23 nC Q_g allows clean 10 µs turn-on/turn-off transitions synchronized to USB PD policy engine signals.

Use Scenario: Powering down ECG/PPG sensor subsystems between measurement intervals to extend battery life in patch-style monitors.

IC Role / Device Role: Ultra-low-quiescent-load switch disconnecting analog front-end from LDO output.

Use Value: IDSS ≤ -1 µA at 25 °C and -10 µA at 85 °C ensures <100 nA total system standby current contribution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1029X-T1-GE3	R_DS(on) = 0.29 Ω at V_GS = -4.5 V; higher V_GS(th) (-0.4 V to -1.2 V); same SC-89 package	Higher conduction loss limits use to ≤0.6 A loads; better suited for cost-sensitive, lower-performance wearables	Select when lower gate charge (3.4 nC) and tighter V_GS(th) tolerance are prioritized over R_DS(on)
DMN2011LFG-7	R_DS(on) = 0.15 Ω at V_GS = -4.5 V; 0.5 V lower \|V_GS(th)\|; SOT-563 (same footprint but non-halogen-free marking)	Lower R_DS(on) improves efficiency in 1 A+ loads; lacks halogen-free certification per IEC 61249-2-21	Choose when maximum efficiency is critical and environmental compliance is secondary to performance

Compared with SI1069X-T1-GE3, Si1029X-T1-GE3 trades conduction loss for faster switching and tighter threshold control, while DMN2011LFG-7 delivers lower R_DS(on) but omits halogen-free assurance-making SI1069X-T1-GE3 optimal for regulated portable medical and consumer devices requiring both efficiency and full environmental compliance.

Availability

SI1069X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery protection, and USB-C accessory detection requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI1069X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, reliability, and miniaturization for portable and industrial systems.

The Si1069X series belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered specifically for low-voltage, low-current load switching in space-constrained battery-powered devices where halogen-free compliance and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SI1069X-T1-GE3 at 70 °C ambient temperature?

The SI1069X-T1-GE3 supports -0.75 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations due to its R_thJA of 540 °C/W in steady-state conditions. Designers must verify PCB copper area and airflow if operating near this limit for extended periods. The SI1069X-T1-GE3 datasheet confirms this value under Note b and c conditions.

Does SI1069X-T1-GE3 have a guaranteed gate resistance specification?

Yes, the SI1069X-T1-GE3 undergoes 100 % R_g testing per its datasheet, with a guaranteed gate resistance range of 9 Ω to 13.5 Ω measured at 1 MHz. This ensures consistent gate drive timing and simplifies external gate resistor selection for EMI control or slew rate limiting. The SI1069X-T1-GE3 specification sheet explicitly lists R_g in the Dynamic section under "Gate Resistance".

Can SI1069X-T1-GE3 be used with a 2.5 V microcontroller GPIO for direct gate drive?

Yes, SI1069X-T1-GE3 has a V_GS(th) range of -0.6 V to -1.5 V, meaning it fully enhances at V_GS = -2.5 V. At that drive level, R_DS(on) is 0.268 Ω (typical) at -0.78 A, enabling functional load switching without level-shifting circuitry. The SI1069X-T1-GE3 product summary confirms usable on-resistance down to V_GS = -2.5 V.

What is the safe operating area (SOA) limitation for SI1069X-T1-GE3 in DC operation?

In DC operation, the SI1069X-T1-GE3 SOA is limited by its R_DS(on) and thermal resistance: at V_DS = -5 V, maximum sustainable current is approximately -0.47 A to maintain T_J ≤ 150 °C on a 1" × 1" FR4 board. This derives from P_D = 0.151 W at T_A = 70 °C and R_DS(on) = 0.184 Ω. The SI1069X-T1-GE3 datasheet Figure 13 (Safe Operating Area) plots this boundary explicitly.

Is SI1069X-T1-GE3 suitable for reverse polarity protection in a 3.3 V system?

Yes, SI1069X-T1-GE3 is well-suited for reverse polarity protection in 3.3 V systems due to its -20 V V_DS rating and low R_DS(on). When placed in the high-side configuration, it blocks reverse current while adding only ~180 mV drop at 0.94 A. Its body diode is not used in this topology, avoiding forward conduction issues. The SI1069X-T1-GE3 application note AN826 confirms SC-89 layout suitability for such protection schemes.

SI1069X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 940mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 184mOhm @ 940mA, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.86 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 308 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1069X-T1-GE3 FAQ

1.How can I place an order for SI1069X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1069X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1069X-T1-GE3 reliable?

The price and inventory of SI1069X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1069X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1069X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1069X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1069X-T1-GE3?

SI1069X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1069X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1069X-T1-GE3?

For technical support, including SI1069X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1069X-T1-GE3 requirements.

6.How does Aetrix verify that SI1069X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1069X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1069X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1069X-T1-GE3?

All SI1069X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1069X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1069X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1069X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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