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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1070X-T1-E3

Name: SI1070X-T1-E3
Brand: Vishay Siliconix
SKU: SI1070X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1070X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1070X-T1-E3.pdf

Description:: MOSFET N-CH 30V 1.2A SC89-6

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Product details

Overview

SI1070X-T1-E3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® Power MOSFET in SC-89 package, with R_DS(on) = 0.099 Ω at V_GS = 4.5 V, continuous drain current of 1.2 A at T_A = 25 °C, and total gate charge of 3.5 nC - designed for low-voltage load switching in space-constrained portable electronics.

For engineers reviewing the SI1070X-T1-E3 datasheet, SI1070X-T1-E3 pinout, SI1070X-T1-E3 application, or SI1070X-T1-E3 equivalent, key selection criteria include its 30 V V_DS, 0.099 Ω on-resistance at 4.5 V drive, SC-89 6-lead thermal performance (R_thJA = 540 °C/W steady-state), and 100 % R_g and UIS tested reliability.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 3.5 nC at V_GS = 4.5 V and I_D = 4.6 A. Its gate threshold voltage range (0.7–1.55 V) supports direct logic-level drive from 2.5 V and 3.3 V microcontrollers.

The device integrates a robust body diode with V_SD = 0.8–1.2 V at I_S = 1.2 A and t_rr = 19.4–29.5 ns, enabling efficient reverse recovery in bidirectional load-switching and battery protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage for 3.3 V/5 V system rail switching
R_DS(on)	0.099 Ω at V_GS = 4.5 V, I_D = 1.2 A - enables <120 mW conduction loss at 1.2 A
I_D (continuous)	1.2 A at T_A = 25 °C - suitable for USB-powered peripherals and PMIC-controlled loads
Q_g	3.5 nC at V_DS = 15 V, V_GS = 4.5 V, I_D = 4.6 A - supports <20 ns turn-on delay with 1 Ω gate resistor
R_thJA	540 °C/W (steady-state) - requires minimal PCB copper area for thermal management on FR4
V_GS(th)	0.7–1.55 V - ensures reliable turn-on with 2.5 V GPIO without level-shifting
C_iss	385 pF at V_DS = 15 V - limits capacitive loading on driving MCU pins

Pinout & Package

SC-89 (SOT-563F) 6-lead surface-mount package with exposed drain pads for thermal enhancement; footprint matches JEDEC MO-220 standard with 0.5 mm pitch and 1.6 mm × 1.6 mm body size.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (Drain)	Power Drain Terminal	Four parallel drain leads reduce package inductance and improve thermal dissipation
3 (Gate)	Control Input	Single gate terminal compatible with 2.5 V/3.3 V logic; R_g = 4.7–6.2 Ω typical
6 (Source)	Reference Node	Source connection referenced to PCB ground plane; used for current sensing and feedback

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.099 Ω R_DS(on) in ultra-small SC-89 package without sacrificing ruggedness
100 % R_g and UIS tested	Guarantees gate resistance consistency and single-pulse avalanche energy ≥4.01 mJ
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for eco-conscious portable designs
Low V_GS(th) range	0.7–1.55 V threshold supports direct interface with low-voltage MCUs and PMICs
Body diode with fast t_rr	19.4–29.5 ns reverse recovery time minimizes switching losses in bidirectional paths

Applications

Smartphone Power Management	USB-C Port Protection
Use Scenario: Isolating auxiliary rails (e.g., camera sensor, audio codec) during sleep mode to reduce standby current. IC Role / Device Role / Timing Role: Low-side load switch controlled by AP GPIO with <20 ns turn-on delay. Use Value: Achieves <1 µA off-state leakage and <120 mW conduction loss at 1.2 A, extending battery life.	Use Scenario: Preventing backfeed and overcurrent in reversible USB-C receptacles with dual-role power. IC Role / Device Role / Timing Role: Bidirectional current path control using body diode conduction and synchronous switching. Use Value: Leverages 0.8–1.2 V V_SD and 19.4 ns t_rr to limit reverse recovery loss during plug insertion/removal.
Wireless Earbud Charging Case	IoT Sensor Node Power Gating
Use Scenario: Enabling/disabling charging circuitry between battery and Qi receiver coil based on lid-open detection. IC Role / Device Role / Timing Role: High-reliability load switch with 100 % UIS screening for surge-prone inductive coupling environments. Use Value: Withstands 9 A I_AS and 4.01 mJ E_AS, eliminating need for external TVS in compact form factor.	Use Scenario: Power cycling environmental sensors (e.g., humidity, temperature) during deep-sleep intervals in LPWAN nodes. IC Role / Device Role / Timing Role: Ultra-low-leakage (1 nA IDSS) switch enabling sub-µA system shutdown states. Use Value: Reduces quiescent current by >99 % compared to always-on regulators, extending multi-year battery life.

Smartphone Power Management

USB-C Port Protection

Use Scenario: Isolating auxiliary rails (e.g., camera sensor, audio codec) during sleep mode to reduce standby current.

IC Role / Device Role / Timing Role: Low-side load switch controlled by AP GPIO with <20 ns turn-on delay.

Use Value: Achieves <1 µA off-state leakage and <120 mW conduction loss at 1.2 A, extending battery life.

Use Scenario: Preventing backfeed and overcurrent in reversible USB-C receptacles with dual-role power.

IC Role / Device Role / Timing Role: Bidirectional current path control using body diode conduction and synchronous switching.

Use Value: Leverages 0.8–1.2 V V_SD and 19.4 ns t_rr to limit reverse recovery loss during plug insertion/removal.

Wireless Earbud Charging Case

IoT Sensor Node Power Gating

Use Scenario: Enabling/disabling charging circuitry between battery and Qi receiver coil based on lid-open detection.

IC Role / Device Role / Timing Role: High-reliability load switch with 100 % UIS screening for surge-prone inductive coupling environments.

Use Value: Withstands 9 A I_AS and 4.01 mJ E_AS, eliminating need for external TVS in compact form factor.

Use Scenario: Power cycling environmental sensors (e.g., humidity, temperature) during deep-sleep intervals in LPWAN nodes.

IC Role / Device Role / Timing Role: Ultra-low-leakage (1 nA IDSS) switch enabling sub-µA system shutdown states.

Use Value: Reduces quiescent current by >99 % compared to always-on regulators, extending multi-year battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1069X-T1-E3	R_DS(on) = 0.125 Ω at V_GS = 4.5 V; higher threshold (0.8–1.7 V); same SC-89 package	Higher conduction loss limits use to ≤1 A continuous loads	Select when lower gate charge (3.2 nC) is prioritized over on-resistance
DMN2004LK-7	R_DS(on) = 0.075 Ω at V_GS = 4.5 V; 20 V V_DS; SOT-563 package but different pinout (G-S-D layout)	Lower voltage rating restricts use to 3.3 V-only systems; non-drop-in replacement	Choose only if board redesign accommodates pinout change and system V_DS ≤20 V

Compared with Si1069X-T1-E3 and DMN2004LK-7, SI1070X-T1-E3 delivers optimal balance of 30 V rating, 0.099 Ω on-resistance, and SC-89 compatibility - making it preferred for 3.3 V/5 V portable load switching where voltage margin and thermal efficiency are critical.

Availability

SI1070X-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and wireless earbud charging case designs requiring stable component supply and long-term lifecycle support.

Supply support for SI1070X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The Si1070X series belongs to Vishay's TrenchFET® low-voltage logic-level MOSFET product line, engineered specifically for space-constrained, battery-operated portable devices demanding low R_DS(on), fast switching, and robust reliability.

FAQ

What is the maximum continuous drain current for SI1070X-T1-E3 at 70 °C ambient temperature?

The SI1070X-T1-E3 supports 1.0 A continuous drain current at T_A = 70 °C, derated from 1.2 A at 25 °C per the absolute maximum ratings table. This reflects thermal limitations of the SC-89 package under natural convection on standard FR4, with R_thJA = 540 °C/W steady-state.

Does SI1070X-T1-E3 require a gate resistor for safe operation with a 3.3 V microcontroller?

Yes - while SI1070X-T1-E3 has a low gate threshold (0.7–1.55 V), a 10–22 Ω gate resistor is recommended to dampen ringing and limit peak gate current during switching. The SI1070X-T1-E3 gate resistance is 4.7–6.2 Ω, and its Q_g = 3.5 nC means even modest drive strength can cause overshoot without series resistance.

Is SI1070X-T1-E3 suitable for reverse polarity protection in a 5 V system?

No - SI1070X-T1-E3 is an N-channel MOSFET intended for low-side switching. For reverse polarity protection in a 5 V system, a P-channel device (e.g., Si1049X-T1-E3) or high-side N-channel configuration with charge pump is required. The SI1070X-T1-E3 body diode conducts from source to drain, not drain to source, limiting its use to unidirectional low-side loads.

What is the avalanche energy rating of SI1070X-T1-E3, and how is it tested?

The SI1070X-T1-E3 is rated for 4.01 mJ repetitive avalanche energy (E_AS) and undergoes 100 % UIS (Unclamped Inductive Switching) testing per the datasheet. This validates its ability to absorb inductive energy during switching transients without failure - critical for load-switching applications with relay coils or motor drivers sharing the same rail.

Can SI1070X-T1-E3 be used in a hot-swap application with inrush current limiting?

Yes - SI1070X-T1-E3 supports controlled turn-on via gate ramping, and its 3.5 nC Q_g allows predictable slew rate control. Combined with its 1.2 A continuous rating and 6 A pulsed capability, the SI1070X-T1-E3 is suitable for hot-swap circuits where soft-start is implemented externally using RC gate control or dedicated controllers.

SI1070X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id:: 1.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 385 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1070X-T1-E3 FAQ

1.How can I place an order for SI1070X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1070X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1070X-T1-E3 reliable?

The price and inventory of SI1070X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1070X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1070X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1070X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1070X-T1-E3?

SI1070X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1070X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1070X-T1-E3?

For technical support, including SI1070X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1070X-T1-E3 requirements.

6.How does Aetrix verify that SI1070X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1070X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1070X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1070X-T1-E3?

All SI1070X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1070X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1070X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1070X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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