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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1071X-T1-E3

Name: SI1071X-T1-E3
Brand: Vishay Siliconix
SKU: SI1071X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1071X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1071X-T1-E3.pdf

Description:: MOSFET P-CH 30V 0.96A SOT563F

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Product details

Overview

SI1071X-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.96 A continuous drain current at 25 °C, and 0.167 Ω R_DS(on) at V_GS = -10 V. It operates as a low-side load switch in portable battery-powered systems requiring compact, low-threshold switching with halogen-free and RoHS-compliant construction.

For engineers reviewing the SI1071X-T1-E3 datasheet, SI1071X-T1-E3 pinout, SI1071X-T1-E3 application, or SI1071X-T1-E3 equivalent, key selection criteria include its -2.5 V gate threshold enabling 3.3 V logic-level drive, SC-89 6-lead package footprint, thermal resistance of 540 °C/W (steady-state), and verified 100 % R_g testing for gate consistency.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with minimal gate charge (4.43 nC typical at V_GS = -4.5 V), supporting fast switching in space-constrained DC-DC and power management circuits. Its negative V_GS(th) range (-0.7 V to -1.45 V) ensures reliable turn-on with standard I/O voltages down to 2.5 V.

The integrated body diode exhibits 0.8–1.2 V forward voltage at -0.63 A and 12.7–19.05 ns reverse recovery time, making it suitable for synchronous rectification and bidirectional current paths where controlled diode conduction is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for low-voltage battery-side switching
R_DS(on)	0.167 Ω at V_GS = -10 V - Enables <150 mW conduction loss at 0.96 A
I_D (cont)	-0.96 A at T_A = 25 °C - Supports sustained load currents in handheld devices
V_GS(th)	-0.7 to -1.45 V - Ensures full enhancement with 2.5–3.3 V control signals
Q_g	4.43 nC (typ.) at V_GS = -4.5 V - Reduces gate drive power and switching transition time
R_thJA	540 °C/W (steady-state) - Requires thermal relief on PCB for >100 mW dissipation
C_iss	315 pF - Limits high-frequency gate oscillation risk without added damping

Pinout & Package

SC-89 (6-lead) surface-mount package with exposed drain pad for thermal performance; dimensions: 2.0 mm × 1.25 mm × 0.95 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (D)	Drain	Common high-current output node; internally connected to exposed pad for heat sinking
3 (G)	Gate	Control input; requires no external pull-down due to negative threshold
6 (S)	Source	Reference terminal for gate drive and load return path

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling SC-89 packaging without sacrificing conduction efficiency
100 % R_g tested	Guarantees consistent gate resistance across production lots, critical for predictable rise/fall timing in timing-sensitive switches
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated consumer electronics
Low V_GS(th) variation	±0.38 V tolerance supports robust operation across temperature (-55 to 150 °C) and process corners

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Isolates Li-ion battery from system during overvoltage or short-circuit events. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active disconnect switch controlled by protection IC. Use Value: 0.167 Ω R_DS(on) limits voltage drop to <160 mV at 0.96 A, preserving battery runtime and detection accuracy.	Use Scenario: Enables/disables 5 V power delivery to USB peripherals in portable hosts. IC Role / Device Role / Timing Role: Load switch providing inrush current limiting and fault isolation. Use Value: -2.5 V V_GS(th) allows direct interface with 3.3 V microcontroller GPIO, eliminating level-shifter components.
Smartphone Backlight Dimming	Wearable Sensor Power Gating
Use Scenario: Controls current to white LED strings via PWM-driven source-follower configuration. IC Role / Device Role / Timing Role: Synchronous rectifier and current sink in boost LED driver feedback path. Use Value: 12.7 ns body diode t_rr minimizes switching losses and EMI during high-frequency PWM dimming (≥10 kHz).	Use Scenario: Cuts power to MEMS accelerometers and environmental sensors between measurement cycles. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load power gate for duty-cycled subsystems. Use Value: 1 nA I_DSS at V_DS = -30 V ensures <10 nW standby leakage, extending multi-week battery life.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Isolates Li-ion battery from system during overvoltage or short-circuit events.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active disconnect switch controlled by protection IC.

Use Value: 0.167 Ω R_DS(on) limits voltage drop to <160 mV at 0.96 A, preserving battery runtime and detection accuracy.

Use Scenario: Enables/disables 5 V power delivery to USB peripherals in portable hosts.

IC Role / Device Role / Timing Role: Load switch providing inrush current limiting and fault isolation.

Use Value: -2.5 V V_GS(th) allows direct interface with 3.3 V microcontroller GPIO, eliminating level-shifter components.

Smartphone Backlight Dimming

Wearable Sensor Power Gating

Use Scenario: Controls current to white LED strings via PWM-driven source-follower configuration.

IC Role / Device Role / Timing Role: Synchronous rectifier and current sink in boost LED driver feedback path.

Use Value: 12.7 ns body diode t_rr minimizes switching losses and EMI during high-frequency PWM dimming (≥10 kHz).

Use Scenario: Cuts power to MEMS accelerometers and environmental sensors between measurement cycles.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load power gate for duty-cycled subsystems.

Use Value: 1 nA I_DSS at V_DS = -30 V ensures <10 nW standby leakage, extending multi-week battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1061X-T1-E3	R_DS(on) = 0.22 Ω at V_GS = -4.5 V (vs. 0.177 Ω for SI1071X-T1-E3); same SC-89 package	Higher conduction loss limits max continuous current to 0.85 A at 25 °C	Select when cost sensitivity outweighs 12 % R_DS(on) penalty and thermal margin is sufficient
DMN2053LFG-7	V_DS = -20 V (vs. -30 V); R_DS(on) = 0.135 Ω at V_GS = -4.5 V; X1-DFN1006-3 package	Lower voltage rating restricts use to ≤12 V systems; smaller 1.0 mm × 0.6 mm footprint	Prefer for ultra-compact 3.3 V/5 V designs where 20 V blocking suffices and board area is constrained

Compared with SI1071X-T1-E3, Si1061X-T1-E3 trades higher on-resistance for lower unit cost in legacy designs, while DMN2053LFG-7 offers superior R_DS(on) in a smaller package but sacrifices 10 V of blocking headroom-making SI1071X-T1-E3 optimal for new 3.3 V–24 V portable systems needing margin and proven reliability.

Availability

SI1071X-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, smartphone backlight drivers, and wearable sensor power gating requiring stable component supply and long-term industrial availability.

Supply support for SI1071X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1071X series belongs to Vishay's TrenchFET® low-voltage P-channel MOSFET product line, engineered specifically for space-constrained, battery-operated portable electronics demanding low gate-threshold drive and high thermal efficiency in sub-3 mm packages.

FAQ

What is the maximum continuous drain current for SI1071X-T1-E3 at 70 °C ambient?

The SI1071X-T1-E3 supports -0.76 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package under natural convection; PCB copper area and airflow significantly influence actual achievable current. The SI1071X-T1-E3 must be mounted on FR4 with recommended 1" × 1" thermal pad for compliance with this rating.

Does SI1071X-T1-E3 require a gate resistor for stable switching?

The SI1071X-T1-E3 does not require a gate resistor for basic on/off operation due to its low Q_g (4.43 nC typ.) and moderate R_g (9.8–14.7 Ω). However, a 1–10 Ω series gate resistor is recommended to dampen ringing during fast edge transitions, especially when driven by high-speed GPIO or when layout inductance exceeds 2 nH. This improves EMI and prevents false triggering in noise-sensitive portable systems using SI1071X-T1-E3.

Can SI1071X-T1-E3 be used in a high-side switch configuration?

No, the SI1071X-T1-E3 is not suitable for high-side switching because it is a P-channel MOSFET with source tied to the positive rail-requiring gate voltage below source to turn on. Driving the gate sufficiently negative relative to a floating high-side source demands a dedicated charge pump or bootstrap circuit. The SI1071X-T1-E3 is optimized for low-side or source-follower configurations where the source is grounded or at a fixed reference, as confirmed in Vishay's application guidance for portable load switching.

What is the body diode forward voltage of SI1071X-T1-E3 at -0.63 A?

The body diode forward voltage (V_SD) of SI1071X-T1-E3 is specified as 0.8–1.2 V at I_S = -0.63 A and T_A = 25 °C. This diode is intrinsic to the MOSFET structure and conducts when the source voltage exceeds the drain voltage. Its relatively low V_SD and fast t_rr (12.7–19.05 ns) make SI1071X-T1-E3 appropriate for freewheeling and synchronous rectification roles where reverse conduction occurs briefly during switching transitions.

Is SI1071X-T1-E3 compatible with lead-free reflow soldering processes?

Yes, SI1071X-T1-E3 is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its marking "-T1-E3" explicitly denotes lead (Pb)-free and halogen-free construction, and the device withstands peak temperatures up to 260 °C for 30 seconds. The SC-89 package's moisture sensitivity level (MSL) is 1, meaning it may be stored indefinitely at ≤30 °C/85 % RH without baking-ensuring robust manufacturability in SI1071X-T1-E3-based production lines.

SI1071X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 960mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 167mOhm @ 960mA, 10V

Vgs(th) (Max) @ Id:: 1.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.3 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 315 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1071X-T1-E3 FAQ

1.How can I place an order for SI1071X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1071X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1071X-T1-E3 reliable?

The price and inventory of SI1071X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1071X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1071X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1071X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1071X-T1-E3?

SI1071X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1071X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1071X-T1-E3?

For technical support, including SI1071X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1071X-T1-E3 requirements.

6.How does Aetrix verify that SI1071X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1071X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1071X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1071X-T1-E3?

All SI1071X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1071X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1071X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1071X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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