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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1071X-T1-GE3

Name: SI1071X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1071X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1071X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1071X-T1-GE3.pdf

Description:: MOSFET P-CH 30V 0.96A SC89-6

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Product details

Overview

SI1071X-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.96 A continuous drain current at 25 °C, and 0.167 Ω R_DS(on) at V_GS = -10 V. It operates as a low-side load switch in portable battery-powered systems with tight space constraints and low-voltage gate drive capability down to -2.5 V.

For engineers reviewing the SI1071X-T1-GE3 datasheet, SI1071X-T1-GE3 pinout, SI1071X-T1-GE3 application, or SI1071X-T1-GE3 equivalent, key selection criteria include verified R_DS(on) at -4.5 V and -2.5 V gate drive, SC-89 package thermal resistance (540 °C/W), body diode recovery performance, and halogen-free/RoHS-compliant construction for handheld electronics.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with minimal gate charge (Q_g = 4.43 nC typ. at V_GS = -4.5 V) and fast switching (t_d(on) = 13 ns, t_f = 14 ns at V_GEN = -4.5 V). Its negative threshold voltage (-0.7 to -1.45 V) enables reliable turn-on with logic-level gate drive from 3.3 V or 2.5 V controllers.

The integrated source-drain body diode exhibits V_SD = 0.8–1.2 V at I_S = -0.63 A and reverse recovery Q_rr = 5.7–8.6 nC, supporting synchronous rectification and flyback management in compact DC-DC converters. Thermal design is constrained by R_thJA = 540 °C/W (steady-state, 1" × 1" FR4), limiting usable power dissipation to 0.236 W at 25 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for battery-input load switching up to 3-cell Li-ion (12.6 V) with margin
R_DS(on) @ V_GS = -10 V	0.167 Ω - Enables <160 mW conduction loss at 1 A load current
R_DS(on) @ V_GS = -4.5 V	0.188 Ω - Confirmed operation with 4.5 V logic or LDO output without level-shifting
I_D (continuous)	-0.96 A @ T_A = 25 °C - Suitable for sub-1 A portable loads (e.g., USB peripherals, sensors, LED drivers)
Q_g	4.43 nC (typ.) @ V_GS = -4.5 V - Low gate drive energy supports high-frequency PWM control up to ~1 MHz
R_thJA	540 °C/W - Requires minimal PCB copper area; no heatsink needed for <150 mW dissipation
V_GS(th)	-0.7 to -1.45 V - Ensures guaranteed turn-on with 2.5 V or 3.3 V microcontroller GPIO

Pinout & Package

SI1071X-T1-GE3 is housed in a surface-mount SC-89 (SOT-363) 6-lead package with exposed drain pads for thermal enhancement. The package measures 2.2 mm × 2.2 mm × 1.0 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (D)	Drain	Four parallel internal drain connections - tied to exposed pad for lowest possible R_thJA and high-current handling
3 (G)	Gate	Single gate input - accepts logic-level negative voltage; 100 % R_g tested for consistent switching
6 (S)	Source	Source terminal - referenced to system ground in low-side switch configuration

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.167 Ω R_DS(on) in SC-89 footprint - 30 % lower on-resistance than planar equivalents at same size
100 % R_g tested	Guarantees gate resistance ≤14.7 Ω - ensures predictable turn-on timing and reduces EMI risk in high-speed switching
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for CE-marked consumer electronics and medical wearables
Body diode with Q_rr = 5.7 nC	Enables efficient asynchronous flyback recovery in boost converters without external Schottky
V_GS(th) range -0.7 to -1.45 V	Ensures robust turn-on margin with 2.5 V or 3.3 V MCU outputs - eliminates need for gate driver ICs

Applications

Smartphone Power Management	Wireless Headset Battery Protection
Use Scenario: Isolating backup battery from main PMIC during deep sleep or fault conditions. IC Role / Device Role: Low-side load switch controlling power path between battery and system rail. Use Value: 0.188 Ω R_DS(on) at -4.5 V enables <180 mW loss at 1 A, extending standby time while maintaining 2.5 V GPIO compatibility.	Use Scenario: Enabling/disabling charging circuitry in Bluetooth earbuds with single-cell Li-ion. IC Role / Device Role: Reverse-polarity protected high-side switch (with external bootstrap) or low-side enable switch. Use Value: Halogen-free construction meets IEC 62368-1 for wearable safety; SC-89 footprint saves >40 % board area vs. SOT-23.
Portable Medical Sensor Node	USB-C Accessory Power Switch
Use Scenario: Power gating of optical heart-rate sensor and BLE transceiver to meet FDA Class II leakage limits. IC Role / Device Role: Precision-controlled load switch with validated sub-1 μA IDSS at -30 V for ultra-low standby current. Use Value: -10 μA IDSS at 85 °C ensures <100 nA total system leakage - critical for multi-week battery life in clinical-grade wearables.	Use Scenario: Controlling VCONN power delivery to USB-C cable e-markers in docking stations. IC Role / Device Role: Logic-level controlled switch meeting USB PD 3.0 VCONN sourcing requirements (up to 1 W). Use Value: 0.167 Ω R_DS(on) limits VCONN drop to <167 mV at 1 A - maintains stable 5 V supply within USB-C spec tolerance.

Smartphone Power Management

Wireless Headset Battery Protection

Use Scenario: Isolating backup battery from main PMIC during deep sleep or fault conditions.

IC Role / Device Role: Low-side load switch controlling power path between battery and system rail.

Use Value: 0.188 Ω R_DS(on) at -4.5 V enables <180 mW loss at 1 A, extending standby time while maintaining 2.5 V GPIO compatibility.

Use Scenario: Enabling/disabling charging circuitry in Bluetooth earbuds with single-cell Li-ion.

IC Role / Device Role: Reverse-polarity protected high-side switch (with external bootstrap) or low-side enable switch.

Use Value: Halogen-free construction meets IEC 62368-1 for wearable safety; SC-89 footprint saves >40 % board area vs. SOT-23.

Portable Medical Sensor Node

USB-C Accessory Power Switch

Use Scenario: Power gating of optical heart-rate sensor and BLE transceiver to meet FDA Class II leakage limits.

IC Role / Device Role: Precision-controlled load switch with validated sub-1 μA IDSS at -30 V for ultra-low standby current.

Use Value: -10 μA IDSS at 85 °C ensures <100 nA total system leakage - critical for multi-week battery life in clinical-grade wearables.

Use Scenario: Controlling VCONN power delivery to USB-C cable e-markers in docking stations.

IC Role / Device Role: Logic-level controlled switch meeting USB PD 3.0 VCONN sourcing requirements (up to 1 W).

Use Value: 0.167 Ω R_DS(on) limits VCONN drop to <167 mV at 1 A - maintains stable 5 V supply within USB-C spec tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1061X-T1-GE3	R_DS(on) = 0.22 Ω @ -4.5 V (vs. 0.188 Ω); same SC-89 package and V_DS rating	Higher conduction loss - suitable only where <0.8 A peak current suffices	Select when cost sensitivity outweighs 20 % higher I²R loss at full load
DMN2020LFG-7	Lower V_DS (-20 V), smaller Q_g (2.4 nC), but R_DS(on) = 0.25 Ω @ -4.5 V; X1-DFN package	Not drop-in - different pinout (G-S-D vs. D-G-D-S-D-D), requires layout change	Choose only if 20 V rating and DFN thermal profile better match system constraints

Compared with SI1071X-T1-GE3, Si1061X-T1-GE3 trades 21 % higher R_DS(on) for lower unit cost, while DMN2020LFG-7 offers faster switching but demands PCB redesign and sacrifices 33 % voltage margin - making SI1071X-T1-GE3 optimal for 30 V-rated, space-constrained 2.5–4.5 V gate-drive applications.

Availability

SI1071X-T1-GE3 is available at Aetrix Electronics and suitable for portable medical devices, wireless audio accessories, and USB-C power delivery modules requiring stable component supply, halogen-free compliance, and SC-89 footprint consistency.

Supply support for SI1071X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, miniaturization, and reliability across automotive, industrial, and consumer markets.

The Si1071X series belongs to Vishay's TrenchFET® P-channel MOSFET family, engineered specifically for low-voltage, low-power load switching in space-constrained portable electronics where gate drive voltage headroom is limited.

FAQ

What is the maximum continuous drain current for SI1071X-T1-GE3 at 70 °C ambient temperature?

The SI1071X-T1-GE3 supports -0.76 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package with R_thJA = 540 °C/W on standard FR4. At this current and -10 V gate drive, conduction loss remains below 92 mW, keeping junction temperature within the 150 °C limit.

Does SI1071X-T1-GE3 support gate drive from a 2.5 V microcontroller GPIO?

Yes, SI1071X-T1-GE3 is fully compatible with 2.5 V logic-level gate drive. Its V_GS(th) range of -0.7 to -1.45 V guarantees turn-on, and R_DS(on) is characterized at -2.5 V (0.244 Ω), enabling reliable operation in battery-powered systems using 2.5 V or 3.3 V MCUs without external level shifters.

What is the safe operating area (SOA) limitation for SI1071X-T1-GE3 in DC operation?

In DC operation, the SI1071X-T1-GE3 SOA is limited by its R_DS(on) and thermal resistance. At T_A = 25 °C, maximum DC power dissipation is 0.236 W, corresponding to -0.96 A at -30 V or -0.49 A at -15 V. Exceeding these values risks junction temperature exceeding 150 °C, even with nominal gate drive.

Is SI1071X-T1-GE3 suitable for reverse polarity protection circuits?

Yes, SI1071X-T1-GE3 can be used in reverse polarity protection when configured as a high-side switch with appropriate gate biasing (e.g., charge pump or Zener clamp). Its -30 V V_DS rating and low R_DS(on) minimize forward voltage drop, and the integrated body diode blocks reverse current when the device is off - provided external circuitry ensures proper gate control.

How does the body diode performance of SI1071X-T1-GE3 compare to discrete Schottky diodes in flyback applications?

The SI1071X-T1-GE3 body diode has V_SD = 0.8–1.2 V at -0.63 A and Q_rr = 5.7–8.6 nC, which is less efficient than a low-V_F Schottky but avoids adding a separate component. In low-duty-cycle, low-current flyback paths (e.g., <500 mA), it eliminates BOM count and layout area - though for >1 A or high-frequency operation, an external Schottky remains preferable.

SI1071X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 960mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 167mOhm @ 960mA, 10V

Vgs(th) (Max) @ Id:: 1.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.3 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 315 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1071X-T1-GE3 FAQ

1.How can I place an order for SI1071X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1071X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1071X-T1-GE3 reliable?

The price and inventory of SI1071X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1071X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1071X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1071X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1071X-T1-GE3?

SI1071X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1071X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1071X-T1-GE3?

For technical support, including SI1071X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1071X-T1-GE3 requirements.

6.How does Aetrix verify that SI1071X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1071X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1071X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1071X-T1-GE3?

All SI1071X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1071X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1071X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1071X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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