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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1072X-T1-E3

Name: SI1072X-T1-E3
Brand: Vishay Siliconix
SKU: SI1072X-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1072X-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1072X-T1-E3.pdf

Description:: MOSFET N-CH 30V 1.3A SC89-6

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Product details

Overview

SI1072X-T1-E3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in SC-89 package, with R_DS(on) = 0.093 Ω at V_GS = 10 V, continuous drain current of 1.3 A at T_A = 25 °C, and total gate charge of 5.41 nC. It serves as a compact load switch in space-constrained portable device power rails.

For engineers reviewing the SI1072X-T1-E3 datasheet, SI1072X-T1-E3 pinout, SI1072X-T1-E3 application, or SI1072X-T1-E3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V drive, halogen-free and RoHS-compliant construction, and validated UIS robustness for transient-safe switching in battery-powered systems.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve enhanced conduction efficiency and fast switching performance in a 6-lead surface-mount SC-89 package. Its gate threshold voltage (1–3 V) enables compatibility with 3.3 V and 5 V logic-level control, while the body diode exhibits V_SD = 0.8–1.2 V at I_S = 0.7 A.

The device is characterized for operation across –55 °C to +150 °C junction temperature range, with thermal resistance R_thJA up to 650 °C/W under steady-state conditions on FR4. It supports repetitive avalanche energy of 3.2 mJ and pulsed drain current up to 6 A, making it suitable for intermittent load switching with transient resilience.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating ceiling for 3.3 V/5 V rail switching.
R_DS(on)	0.093 Ω @ V_GS = 10 V - Low conduction loss at full logic drive; enables <120 mW I²R loss at 1.3 A DC load.
I_D (continuous)	1.3 A @ T_A = 25 °C - Rated current for sustained switching on 1" × 1" FR4 board; derates to 1.03 A at 70 °C ambient.
Q_g	5.41 nC (typ.) - Total gate charge determines driver strength requirement; compatible with low-current GPIO or dedicated gate drivers.
V_GS(th)	1–3 V - Ensures turn-on with standard 3.3 V microcontroller outputs without level-shifting.
P_D	0.236 W @ T_A = 25 °C - Power dissipation limit reflects thermal constraint of SC-89 package; requires careful PCB copper area planning.

Pinout & Package

SC-89 (6-lead) surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows top-view layout: Pin 1 = Drain, Pin 2 = Drain, Pin 3 = Gate, Pin 4 = Drain, Pin 5 = Drain, Pin 6 = Source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals reduce package inductance and improve current sharing; connected internally to MOSFET channel and heat-sinkable pad.
3	Gate (G)	Single gate input; requires <5.5 nC charge for full turn-on; sensitive to ESD-requires handling per J-STD-020.
6	Source (S)	Reference node for gate drive and load return path; ties to system ground or low-side switch common point.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs-critical for miniaturized portable designs.
100 % R_g and UIS tested	Each unit verified for gate resistance consistency and unclamped inductive switching ruggedness-ensures reliability in real-world load dumps.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC-supports environmental compliance for global consumer electronics shipments.
Low Q_gd/Q_g ratio (0.8/5.41 nC)	Reduces Miller-induced switching oscillation risk-enables stable operation with minimal external gate resistor.

Applications

Smartphone Power Management	Wireless Headset Battery Protection
Use Scenario: Isolating backup battery from main PMIC during charging cycles to prevent backfeed and leakage. IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated/deactivated via baseband processor GPIO. Use Value: R_DS(on) ≤ 0.129 Ω at 4.5 V ensures <150 mW conduction loss at 1.2 A peak headset current-extending runtime by minimizing parasitic drop.	Use Scenario: Enabling/disabling charging circuitry in true wireless stereo (TWS) earbuds to conserve standby current. IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load switch placed between linear charger IC and Li-ion cell. Use Value: V_GS(th) range (1–3 V) guarantees clean turn-on with 2.8 V LDO output-eliminating need for external level shifter in ultra-low-voltage subsystems.
USB-C Accessory Detection	Wearable Sensor Subsystem Enable
Use Scenario: Detecting presence of USB-C accessories by monitoring VBUS pull-down current through CC line termination. IC Role / Device Role / Timing Role: Precision current-switching element in CC line bias network; driven by USB PD controller. Use Value: Tight R_DS(on) tolerance (0.077–0.093 Ω) ensures repeatable 500 mA sink accuracy-meeting USB-IF CC detection specification.	Use Scenario: Power-gating MEMS accelerometers and optical heart-rate sensors during sleep mode in fitness trackers. IC Role / Device Role / Timing Role: Ultra-low-leakage enable switch isolating sensor supply rail from main SoC domain. Use Value: I_DSS ≤ 1 µA at 30 V ensures <100 nA system standby current contribution-preserving multi-week battery life.

Smartphone Power Management

Wireless Headset Battery Protection

Use Scenario: Isolating backup battery from main PMIC during charging cycles to prevent backfeed and leakage.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated/deactivated via baseband processor GPIO.

Use Value: R_DS(on) ≤ 0.129 Ω at 4.5 V ensures <150 mW conduction loss at 1.2 A peak headset current-extending runtime by minimizing parasitic drop.

Use Scenario: Enabling/disabling charging circuitry in true wireless stereo (TWS) earbuds to conserve standby current.

IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load switch placed between linear charger IC and Li-ion cell.

Use Value: V_GS(th) range (1–3 V) guarantees clean turn-on with 2.8 V LDO output-eliminating need for external level shifter in ultra-low-voltage subsystems.

USB-C Accessory Detection

Wearable Sensor Subsystem Enable

Use Scenario: Detecting presence of USB-C accessories by monitoring VBUS pull-down current through CC line termination.

IC Role / Device Role / Timing Role: Precision current-switching element in CC line bias network; driven by USB PD controller.

Use Value: Tight R_DS(on) tolerance (0.077–0.093 Ω) ensures repeatable 500 mA sink accuracy-meeting USB-IF CC detection specification.

Use Scenario: Power-gating MEMS accelerometers and optical heart-rate sensors during sleep mode in fitness trackers.

IC Role / Device Role / Timing Role: Ultra-low-leakage enable switch isolating sensor supply rail from main SoC domain.

Use Value: I_DSS ≤ 1 µA at 30 V ensures <100 nA system standby current contribution-preserving multi-week battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.075 Ω @ 4.5 V; higher I_D = 2.8 A; SOT-23-3 package (3-pin, no exposed drain)	Larger footprint; lacks multi-drain thermal path; higher current rating exceeds typical portable load needs	Prefer SI1072X-T1-E3 when board space and thermal performance on thin FR4 are critical.
AO3400	R_DS(on) = 0.042 Ω @ 10 V; SOT-23-3; no UIS or R_g testing; RoHS but not halogen-free	Lower conduction loss but unverified avalanche ruggedness; less stringent environmental compliance	Choose SI1072X-T1-E3 where transient immunity and halogen-free certification are mandatory.

Compared with DMN2004LK-7 and AO3400, the SI1072X-T1-E3 offers superior thermal management via quad-drain SC-89 packaging, factory-validated UIS robustness, and full halogen-free compliance-making it optimal for high-reliability, space-constrained portable power switches where long-term field stability is prioritized over marginal R_DS(on) reduction.

Availability

SI1072X-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery protection, USB-C accessory detection, and wearable sensor subsystem enable requiring stable component supply and consistent parametric performance across production lots.

Supply support for SI1072X-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1072X belongs to Vishay's TrenchFET® low-voltage logic-level MOSFET product line, engineered specifically for compact, battery-operated consumer electronics requiring low gate-drive voltage, high switching efficiency, and robust transient handling.

FAQ

What is the maximum continuous drain current rating for SI1072X-T1-E3 at 70 °C ambient temperature?

The SI1072X-T1-E3 supports a continuous drain current of 1.03 A at T_A = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with derating applied per thermal resistance limits. This value assumes mounting on a 1" × 1" FR4 board per test condition b. Exceeding this current without additional heatsinking risks junction temperature violation.

Does SI1072X-T1-E3 support 3.3 V logic-level gate drive?

Yes, the SI1072X-T1-E3 has a gate threshold voltage V_GS(th) of 1–3 V, ensuring reliable turn-on with standard 3.3 V microcontroller GPIO outputs. At V_GS = 4.5 V, it delivers R_DS(on) = 0.129 Ω-confirming strong enhancement-mode behavior well within logic-level drive capability. No external level shifter is required for 3.3 V systems.

What is the thermal resistance junction-to-ambient (R_thJA) for SI1072X-T1-E3 under steady-state conditions?

The SI1072X-T1-E3 has a maximum steady-state junction-to-ambient thermal resistance of 650 °C/W when mounted on a 1" × 1" FR4 board, as stated in the Thermal Resistance Ratings table. The typical value is 540 °C/W. This high R_thJA reflects the thermal limitations of the SC-89 package and necessitates conservative power derating or supplemental copper pour for sustained operation above 100 mW.

Is SI1072X-T1-E3 suitable for unclamped inductive switching (UIS) applications?

Yes, the SI1072X-T1-E3 is 100 % UIS tested per datasheet, with a rated repetitive avalanche energy E_AS of 3.2 mJ and avalanche current I_AS of 8 A (L = 0.1 mH). This validation confirms its ability to safely absorb inductive kickback in load-switching circuits without external snubbers-critical for relay or solenoid drive interfaces in portable devices.

What does the marking code "V XX" on SI1072X-T1-E3 indicate?

The marking code "V XX" on the SI1072X-T1-E3 top surface identifies the device family and lot traceability per Vishay's part marking convention shown in the datasheet. "V" denotes the Si1072X series, while "XX" encodes date code and manufacturing lot information. Full decoding requires referencing Vishay's official marking guide (Document Number: 73892), not inferred from visual inspection alone.

SI1072X-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 93mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1072X-T1-E3 FAQ

1.How can I place an order for SI1072X-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1072X-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1072X-T1-E3 reliable?

The price and inventory of SI1072X-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1072X-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1072X-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1072X-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1072X-T1-E3?

SI1072X-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1072X-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1072X-T1-E3?

For technical support, including SI1072X-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1072X-T1-E3 requirements.

6.How does Aetrix verify that SI1072X-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1072X-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1072X-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1072X-T1-E3?

All SI1072X-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1072X-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1072X-T1-E3 part is unused and in its original packaging.

Return procedure for SI1072X-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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