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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1072X-T1-GE3

Name: SI1072X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1072X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1072X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1072X-T1-GE3.pdf

Description:: MOSFET N-CH 30V SC89-6

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Product details

Overview

SI1072X-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® Power MOSFET in SC-89 package, with R_DS(on) = 0.093 Ω at V_GS = 10 V, continuous drain current of 1.3 A at T_A = 25 °C, total gate charge of 5.41 nC (typ.), and 100 % R_g and UIS tested - used as a load switch in portable devices.

For engineers reviewing the SI1072X-T1-GE3 datasheet, SI1072X-T1-GE3 pinout, SI1072X-T1-GE3 application, or SI1072X-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, thermal resistance under 530 °C/W, avalanche energy rating of 3.2 mJ, and halogen-free/RoHS-compliant construction for space-constrained battery-powered systems.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve low on-resistance and fast switching with Q_g = 5.41 nC (typ.) at 10 V and 3.7 nC (typ.) at 4.5 V. Its gate threshold voltage (1–3 V) and ±20 V V_GS rating support robust logic-level drive compatibility.

Thermal design is constrained by R_thJA = 540 °C/W (steady state) on FR4, limiting continuous power dissipation to 0.236 W at 25 °C ambient. The integrated body diode exhibits V_SD = 0.8–1.2 V at I_S = 0.7 A and t_rr = 11.2–17 ns, enabling moderate-frequency synchronous or freewheeling operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage for low-voltage load switching up to 30 V rail
R_DS(on)	0.093 Ω at V_GS = 10 V - enables <120 mW conduction loss at 1.3 A DC load
I_D (cont)	1.3 A at T_A = 25 °C - supports compact portable device loads with minimal heatsinking
Q_g	5.41 nC (typ.) - allows efficient 1–5 MHz switching with low gate drive power
E_AS	3.2 mJ - provides single-pulse avalanche ruggedness for inductive load transients
R_thJA	540 °C/W (steady state) - defines thermal derating curve on standard 1" × 1" FR4 board

Pinout & Package

SC-89 (6-lead) surface-mount package with exposed drain paddle for thermal enhancement; lead (Pb)-free and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel drain terminals tied to exposed paddle - primary current path and thermal conduction path
5	Source (S)	Main source connection - return path for load current and reference for gate drive
6	Gate (G)	Control terminal - requires ≤±20 V drive; low input capacitance (C_iss = 280 pF) eases driver selection

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.093 Ω R_DS(on) in ultra-small SC-89, enabling high-current density in portable footprint
100 % R_g and UIS tested	Ensures gate resistance consistency and single-pulse avalanche reliability without screening exceptions
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer electronics environmental compliance
Low Q_g/Q_gd ratio	Q_gd = 0.8 nC / Q_g = 5.41 nC → ~15 % - improves switching efficiency and reduces Miller-induced shoot-through risk

Applications

Smartphone Power Management	Wireless Headset Battery Protection
Use Scenario: Isolating backup battery from main PMIC during charging or fault conditions. IC Role / Device Role: Low-side load switch controlling battery discharge path. Use Value: 0.093 Ω R_DS(on) limits voltage drop to <120 mV at 1.3 A, preserving runtime and thermal margin in sealed enclosure.	Use Scenario: Enabling/disabling charging circuitry in Bluetooth earbuds to prevent overvoltage during USB insertion. IC Role / Device Role: High-reliability protection switch in ultra-low-power wearable subsystem. Use Value: 3.2 mJ E_AS withstands inductive kickback from charging IC enable lines without clamping diodes.
USB-C Accessory Detection	Medical Sensor Module Power Gating
Use Scenario: Controlling VBUS power delivery to legacy USB peripherals during enumeration. IC Role / Device Role: Logic-level controlled power switch responding to microcontroller GPIO. Use Value: V_GS(th) = 1–3 V ensures turn-on with 3.3 V MCU outputs; 0.129 Ω R_DS(on) at 4.5 V supports 1.2 A peak loads.	Use Scenario: Powering down analog front-end sensors between measurement cycles to extend battery life. IC Role / Device Role: Low-quiescent, low-leakage power gate for precision medical subsystems. Use Value: I_DSS = 1 µA at 30 V and T_J = 25 °C minimizes standby current drain in multi-week monitoring applications.

Smartphone Power Management

Wireless Headset Battery Protection

Use Scenario: Isolating backup battery from main PMIC during charging or fault conditions.

IC Role / Device Role: Low-side load switch controlling battery discharge path.

Use Value: 0.093 Ω R_DS(on) limits voltage drop to <120 mV at 1.3 A, preserving runtime and thermal margin in sealed enclosure.

Use Scenario: Enabling/disabling charging circuitry in Bluetooth earbuds to prevent overvoltage during USB insertion.

IC Role / Device Role: High-reliability protection switch in ultra-low-power wearable subsystem.

Use Value: 3.2 mJ E_AS withstands inductive kickback from charging IC enable lines without clamping diodes.

USB-C Accessory Detection

Medical Sensor Module Power Gating

Use Scenario: Controlling VBUS power delivery to legacy USB peripherals during enumeration.

IC Role / Device Role: Logic-level controlled power switch responding to microcontroller GPIO.

Use Value: V_GS(th) = 1–3 V ensures turn-on with 3.3 V MCU outputs; 0.129 Ω R_DS(on) at 4.5 V supports 1.2 A peak loads.

Use Scenario: Powering down analog front-end sensors between measurement cycles to extend battery life.

IC Role / Device Role: Low-quiescent, low-leakage power gate for precision medical subsystems.

Use Value: I_DSS = 1 µA at 30 V and T_J = 25 °C minimizes standby current drain in multi-week monitoring applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1062X-T1-GE3	R_DS(on) = 0.135 Ω at V_GS = 4.5 V; lower ID (1.1 A); same SC-89 package	Higher conduction loss at 1.2 A; suitable where thermal budget allows higher R_DS(on)	Select when lower gate charge (4.8 nC) is prioritized over on-resistance
DMN2053UVT-7	R_DS(on) = 0.085 Ω at V_GS = 4.5 V; higher ID (2.0 A); same 6-lead SOT-563 footprint	Improved current capability and lower 4.5 V R_DS(on), but not halogen-free certified	Choose for higher current or tighter 4.5 V drive margin where halogen-free is not mandated

Compared with SI1072X-T1-GE3, Si1062X-T1-GE3 trades lower gate charge for higher on-resistance, while DMN2053UVT-7 offers superior 4.5 V performance and current rating but lacks halogen-free compliance - making SI1072X-T1-GE3 optimal for regulated portable designs requiring both environmental compliance and balanced switching/conduction efficiency.

Availability

SI1072X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery protection, and USB-C accessory detection requiring stable component supply and full halogen-free compliance.

Supply support for SI1072X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and environmentally compliant components.

The Si1072X series targets space-constrained portable electronics, delivering optimized R_DS(on)-Q_g trade-offs and rigorous UIS/avalanche testing for battery-powered load switching applications.

FAQ

What is the maximum continuous drain current for SI1072X-T1-GE3 at 70 °C ambient?

The SI1072X-T1-GE3 supports 1.03 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package on standard FR4 PCBs, where junction temperature must remain below 150 °C under steady-state conditions. Designers should verify layout copper area and airflow to maintain this rating in actual systems.

Does SI1072X-T1-GE3 support logic-level gate drive?

Yes, SI1072X-T1-GE3 has a gate threshold voltage range of 1–3 V and delivers R_DS(on) = 0.129 Ω at V_GS = 4.5 V, making it fully compatible with 3.3 V and 5 V logic-level microcontrollers. Its low V_GS(th) ensures reliable turn-on even with marginal gate drive, and the 0.129 Ω on-resistance at 4.5 V enables efficient operation in battery-powered systems without level-shifting circuitry.

What is the avalanche energy rating of SI1072X-T1-GE3, and how is it tested?

The SI1072X-T1-GE3 is rated for 3.2 mJ repetitive avalanche energy (E_AS) with L = 0.1 mH, per the Absolute Maximum Ratings table. This value is verified using standardized unclamped inductive switching (UIS) tests, and the device undergoes 100 % UIS screening during production. It ensures robustness against inductive transients in load-switch applications such as battery disconnect or motor control feedback paths.

Is SI1072X-T1-GE3 halogen-free and RoHS-compliant?

Yes, SI1072X-T1-GE3 is explicitly certified halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as stated in the Vishay datasheet revision E. The "GE3" suffix denotes lead (Pb)-free and halogen-free construction, making it suitable for consumer electronics markets with strict environmental requirements including EU WEEE and China RoHS.

What is the thermal resistance from junction to ambient for SI1072X-T1-GE3 on a standard PCB?

The SI1072X-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 650 °C/W under steady-state conditions on a 1" × 1" FR4 board, with a typical value of 540 °C/W. This parameter governs power derating curves - for example, at 25 °C ambient, the maximum continuous power dissipation is 0.236 W before reaching the 150 °C junction limit. Layout enhancements (e.g., thermal vias, copper pour) can improve this value.

SI1072X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 93mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1072X-T1-GE3 FAQ

1.How can I place an order for SI1072X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1072X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1072X-T1-GE3 reliable?

The price and inventory of SI1072X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1072X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1072X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1072X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1072X-T1-GE3?

SI1072X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1072X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1072X-T1-GE3?

For technical support, including SI1072X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1072X-T1-GE3 requirements.

6.How does Aetrix verify that SI1072X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1072X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1072X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1072X-T1-GE3?

All SI1072X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1072X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1072X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1072X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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