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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1073X-T1-GE3

Name: SI1073X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1073X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1073X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1073X-T1-GE3.pdf

Description:: MOSFET P-CH 30V 0.98A SC89-6

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Product details

Overview

SI1073X-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.173 Ω R_DS(on) at V_GS = -10 V, and -0.98 A continuous drain current at T_A = 25 °C. It serves as a low-power load switch in space-constrained portable electronics with halogen-free and RoHS-compliant construction.

For engineers reviewing the SI1073X-T1-GE3 datasheet, SI1073X-T1-GE3 pinout, SI1073X-T1-GE3 application, or SI1073X-T1-GE3 equivalent, key selection criteria include its SC-89 package footprint, gate threshold voltage range (-1 V to -3 V), body diode forward voltage (0.8–1.2 V), avalanche energy rating (1.8 mJ), and thermal resistance (540 °C/W steady-state).

Technical Context

This device operates as a single P-channel MOSFET with trench-based silicon architecture optimized for low gate charge (3.25 nC typical at V_GS = -4.5 V) and fast switching (t_d(on) = 6 ns, t_f = 6 ns under specified test conditions). Its negative V_GS(th) enables direct logic-level control from 3.3 V or 5 V microcontrollers without level shifting.

The SI1073X-T1-GE3 integrates a built-in source-drain body diode with reverse recovery time of 14.3 ns and Q_rr = 12.16 nC, supporting synchronous rectification and flyback protection in low-duty-cycle DC-DC topologies. Absolute maximum ratings include -30 V V_DS, ±20 V V_GS, and 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage before breakdown; defines upper limit for supply rail compatibility.
R_DS(on)	0.173 Ω at V_GS = -10 V - On-resistance determines conduction loss and thermal rise at 0.98 A load.
I_D (continuous)	-0.98 A at T_A = 25 °C - Usable current capacity on standard FR4 board without forced cooling.
Q_g	3.25 nC (V_GS = -4.5 V) - Gate charge value directly impacts driver strength requirement and switching speed.
V_GS(th)	-1 V to -3 V - Threshold voltage range ensures reliable turn-on with 3.3 V logic while avoiding false triggering.
R_thJA	540 °C/W (steady state) - Thermal resistance governs junction temperature rise under continuous operation.
E_AS	1.8 mJ - Avalanche energy rating supports inductive load switching without external snubbers.

Pinout & Package

SI1073X-T1-GE3 is housed in a surface-mount SC-89 (SOT-363) package with six leads and a 1.6 mm × 1.6 mm footprint. The package uses a dual-drain configuration to enhance current handling and thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four paralleled drain terminals reduce effective R_DS(on) and improve thermal dissipation path.
3	Gate (G)	Single gate input controlling channel conduction; requires ≤20 V absolute gate-source voltage.
6	Source (S)	Common source node; connects to system ground or high-side return path in load-switch configurations.

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) per die area than planar MOSFETs, critical for miniaturized power stages.
100 % R_g and UIS tested	Each unit undergoes gate resistance screening and unclamped inductive switching validation for production reliability.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment.
Low Q_gd/Q_gs ratio	1.47 nC / 1.02 nC improves Miller immunity and reduces risk of spurious turn-on during high-dV/dt events.

Applications

Battery-Powered Load Switch	USB Port Power Control
Use Scenario: Enabling/disabling power to peripheral modules (e.g., BLE radio, sensor hub) in wearables to extend battery life. IC Role / Device Role / Timing Role: High-side load switch controlling V_CC delivery with fast turn-off to prevent backfeed. Use Value: 0.173 Ω R_DS(on) limits dropout to <170 mV at 1 A, preserving runtime; SC-89 footprint saves PCB area.	Use Scenario: Managing VBUS power delivery to downstream USB devices in host controllers or hubs. IC Role / Device Role / Timing Role: Overcurrent-protected high-side switch responding to USB enumeration signals. Use Value: -30 V V_DS rating accommodates transient surges; body diode handles reverse current during hot-plug events.
Low-Voltage Logic-Level Switch	Power-Rail Sequencing
Use Scenario: Isolating 3.3 V or 5 V rails between processor subsystems during sleep/wake transitions. IC Role / Device Role / Timing Role: Voltage-controlled series switch activated by GPIO with minimal drive overhead. Use Value: -1 V to -3 V V_GS(th) ensures full enhancement from 3.3 V outputs; low Q_g enables µs-scale switching.	Use Scenario: Controlling power-up order of multiple ICs (e.g., FPGA core vs. I/O banks) in embedded systems. IC Role / Device Role / Timing Role: Delayed-enable switch triggered by reset controller or sequencer output. Use Value: 150 °C max junction temperature supports operation in thermally dense layouts; avalanche rating handles sequencing transients.

Battery-Powered Load Switch

USB Port Power Control

Use Scenario: Enabling/disabling power to peripheral modules (e.g., BLE radio, sensor hub) in wearables to extend battery life.

IC Role / Device Role / Timing Role: High-side load switch controlling V_CC delivery with fast turn-off to prevent backfeed.

Use Value: 0.173 Ω R_DS(on) limits dropout to <170 mV at 1 A, preserving runtime; SC-89 footprint saves PCB area.

Use Scenario: Managing VBUS power delivery to downstream USB devices in host controllers or hubs.

IC Role / Device Role / Timing Role: Overcurrent-protected high-side switch responding to USB enumeration signals.

Use Value: -30 V V_DS rating accommodates transient surges; body diode handles reverse current during hot-plug events.

Low-Voltage Logic-Level Switch

Power-Rail Sequencing

Use Scenario: Isolating 3.3 V or 5 V rails between processor subsystems during sleep/wake transitions.

IC Role / Device Role / Timing Role: Voltage-controlled series switch activated by GPIO with minimal drive overhead.

Use Value: -1 V to -3 V V_GS(th) ensures full enhancement from 3.3 V outputs; low Q_g enables µs-scale switching.

Use Scenario: Controlling power-up order of multiple ICs (e.g., FPGA core vs. I/O banks) in embedded systems.

IC Role / Device Role / Timing Role: Delayed-enable switch triggered by reset controller or sequencer output.

Use Value: 150 °C max junction temperature supports operation in thermally dense layouts; avalanche rating handles sequencing transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1061X-T1-GE3	-20 V V_DS, 0.28 Ω R_DS(on) at -4.5 V, 0.75 A I_D	Limited to ≤20 V systems; higher on-resistance increases conduction loss at same current.	Select when lower voltage rating suffices and cost sensitivity outweighs efficiency needs.
DMN2053LSD-13	-20 V V_DS, 0.125 Ω R_DS(on) at -4.5 V, SOT-23-6 package	Higher current capability but incompatible SC-89 footprint; different pinout (G-S-D layout).	Choose only if redesigning PCB layout is acceptable and lower R_DS(on) justifies requalification.

Compared with Si1061X-T1-GE3 and DMN2053LSD-13, the SI1073X-T1-GE3 offers superior voltage margin (-30 V), balanced R_DS(on)/Q_g trade-off, and SC-89 compatibility-making it optimal for compact 3.3 V/5 V load switching where board space and surge resilience are prioritized.

Availability

SI1073X-T1-GE3 is available at Aetrix Electronics and suitable for battery-powered load switches, USB port power control, low-voltage logic-level switching, and power-rail sequencing requiring stable component supply across industrial and consumer design cycles.

Supply support for SI1073X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs discrete semiconductors with emphasis on power efficiency, miniaturization, and reliability across automotive, industrial, and computing markets.

The Si1073X family targets ultra-compact, low-power P-channel switching applications where SC-89 packaging, halogen-free compliance, and robust avalanche performance are essential design requirements.

FAQ

What is the maximum continuous drain current for SI1073X-T1-GE3 at 70 °C ambient temperature?

The SI1073X-T1-GE3 supports -0.78 A continuous drain current at T_A = 70 °C on a 1" × 1" FR4 board. This derating reflects thermal limitations imposed by its 540 °C/W junction-to-ambient resistance. At higher ambient temperatures or in constrained layouts, further current reduction is required to maintain T_J ≤ 150 °C. The SI1073X-T1-GE3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SI1073X-T1-GE3 have a built-in body diode, and what are its key parameters?

Yes, the SI1073X-T1-GE3 integrates a source-drain body diode with V_SD = 0.8–1.2 V at I_S = -0.63 A and reverse recovery time t_rr = 14.3–21.45 ns. Its Q_rr is 12.16–18.25 nC, supporting moderate-frequency flyback paths. These values are measured per the SI1073X-T1-GE3 datasheet's Drain-Source Body Diode Characteristics section and confirm suitability for non-synchronous buck or load-dump protection.

Can SI1073X-T1-GE3 be driven directly by a 3.3 V microcontroller GPIO?

Yes, the SI1073X-T1-GE3 has a V_GS(th) range of -1 V to -3 V, ensuring full enhancement with 3.3 V logic applied to the gate (V_GS ≈ -3.3 V). Its low gate charge (3.25 nC typical) minimizes driver loading. However, ensure the GPIO can sink sufficient current during turn-on; the SI1073X-T1-GE3 does not require external level shifting for 3.3 V control.

What is the thermal resistance (R_thJA) of SI1073X-T1-GE3 under steady-state conditions?

The SI1073X-T1-GE3 has a maximum junction-to-ambient thermal resistance of 650 °C/W and a typical value of 540 °C/W under steady-state conditions on a 1" × 1" FR4 board. This value is critical for calculating junction temperature rise: ΔT_J = P_D × R_thJA. The SI1073X-T1-GE3 datasheet lists these figures in the Thermal Resistance Ratings table.

Is SI1073X-T1-GE3 suitable for avalanche-rated applications, and what is its E_AS rating?

Yes, the SI1073X-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for 1.8 mJ repetitive avalanche energy (E_AS). This makes it suitable for driving inductive loads like relays or solenoids without external snubbers, provided pulse conditions stay within the Safe Operating Area curve defined in the SI1073X-T1-GE3 datasheet.

SI1073X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 980mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 173mOhm @ 980mA, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 265 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1073X-T1-GE3 FAQ

1.How can I place an order for SI1073X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1073X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1073X-T1-GE3 reliable?

The price and inventory of SI1073X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1073X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1073X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1073X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1073X-T1-GE3?

SI1073X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1073X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1073X-T1-GE3?

For technical support, including SI1073X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1073X-T1-GE3 requirements.

6.How does Aetrix verify that SI1073X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1073X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1073X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1073X-T1-GE3?

All SI1073X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1073X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1073X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1073X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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