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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1079X-T1-GE3

Name: SI1079X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1079X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1079X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1079X-T1-GE3.pdf

Description:: MOSFET P-CH 30V 1.44A SC89-6

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Product details

Overview

SI1079X-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.100 Ω R_DS(on) at -4.5 V gate drive, and -1.44 A continuous drain current. It serves as a compact load switch in space-constrained portable power management circuits with low gate charge (8.1 nC) and robust ESD tolerance (2500 V).

For engineers reviewing the SI1079X-T1-GE3 datasheet, SI1079X-T1-GE3 pinout, SI1079X-T1-GE3 application, or SI1079X-T1-GE3 equivalent, key selection criteria include its SC-89 6-lead package, -1.5 V gate threshold, body diode forward voltage of -0.75 V, and thermal resistance of 450 °C/W under steady-state conditions.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with trench-gate architecture optimized for low-voltage logic-level gate drive. Its gate threshold voltage range (-0.6 V to -1.5 V) enables reliable turn-on from 2.5 V–4.5 V controllers, while the 100 % R_g tested specification ensures consistent switching timing across production lots.

The integrated source-drain body diode supports synchronous rectification and reverse-current blocking in bidirectional power paths. Dynamic parameters-including 750 pF input capacitance, 60 pF reverse transfer capacitance, and 16 ns typical reverse recovery time-support efficient operation in high-frequency DC-DC and battery-protection topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V maximum drain-source voltage - defines safe operating ceiling for battery-input circuits up to 30 V nominal.
R_DS(on)	0.100 Ω max at V_GS = -4.5 V - enables <150 mW conduction loss at 1.44 A, critical for thermally limited portable PCBs.
I_D (cont)	-1.44 A at T_A = 25 °C - specifies usable current capacity on standard FR4 without forced airflow or heatsinking.
Q_g	8.1 nC typical at V_GS = -4.5 V - determines gate driver strength requirement and switching energy loss in PWM applications.
V_GS(th)	-0.6 V to -1.5 V - guarantees turn-on with common 2.5 V/3.3 V microcontroller GPIOs, eliminating need for level-shifting.
R_thJA	450 °C/W steady-state - sets thermal derating curve: max 0.33 W dissipation at 25 °C ambient, dropping to 0.21 W at 70 °C.
V_SD	-0.75 V typical at I_S = -1.15 A - quantifies forward drop of internal body diode during reverse conduction or freewheeling.

Pinout & Package

SI1079X-T1-GE3 is housed in an SC-89 (SOT-563F) 6-lead surface-mount package measuring 1.60 mm × 1.60 mm × 0.58 mm, optimized for high-density portable layouts. The package features dual drain leads per side for improved current handling and thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel drain terminals reduce effective lead inductance and package resistance; connect directly to high-current PCB planes.
3	Gate (G)	Single gate input requiring low-charge drive; layout must minimize trace inductance to avoid ringing during fast switching.
5	Source (S)	Common source node for body diode cathode and channel return; ties to system ground or negative rail reference point.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling higher current density in ultra-small SC-89 footprint.
100 % R_g tested	Ensures gate resistance falls within 3.6–36 Ω range, guaranteeing predictable turn-on/turn-off timing without post-production screening.
2500 V HBM ESD rating	Provides robust protection against handling damage during SMT assembly and end-user device integration without external clamping.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B requirements for environmentally compliant manufacturing and disposal.
SC-89 thermal design	Exposed drain pads on four leads enhance heat transfer to PCB copper, improving power handling over standard SOT-23 equivalents.

Applications

Smartphone Power Sequencing	USB-C Port Protection
Use Scenario: Controlled power-up of baseband processor rails after PMIC reset completion. IC Role / Device Role / Timing Role: Low-side load switch enabling precise sequencing delay and inrush current limiting. Use Value: 0.100 Ω R_DS(on) minimizes voltage drop across 1.44 A rail, preserving margin for core logic supply tolerances.	Use Scenario: Reverse-current blocking between USB-C VBUS and internal battery during charging/discharging transitions. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode controller interface with fast body-diode conduction. Use Value: -0.75 V V_SD reduces forward drop by >300 mV versus Schottky alternatives, lowering thermal load in slim-profile devices.
Wireless Earbud Battery Management	IoT Sensor Node Load Switching
Use Scenario: Isolating Li-ion battery from BLE SoC during deep-sleep mode to eliminate quiescent leakage. IC Role / Device Role / Timing Role: High-impedance off-state switch with <1 μA IDSS at -30 V, minimizing standby current drain. Use Value: -1.5 V maximum V_GS(th) ensures full turn-off with 1.8 V GPIO control, preventing partial conduction in sleep states.	Use Scenario: Enabling/disabling environmental sensor subsystems (e.g., temperature/humidity ICs) based on MCU wake events. IC Role / Device Role / Timing Role: Logic-level controlled power gate with 8.1 nC Q_g enabling sub-microsecond switching via standard GPIO. Use Value: 22 ns typical turn-on delay allows rapid subsystem activation (<100 μs) without dedicated driver circuitry.

Smartphone Power Sequencing

USB-C Port Protection

Use Scenario: Controlled power-up of baseband processor rails after PMIC reset completion.

IC Role / Device Role / Timing Role: Low-side load switch enabling precise sequencing delay and inrush current limiting.

Use Value: 0.100 Ω R_DS(on) minimizes voltage drop across 1.44 A rail, preserving margin for core logic supply tolerances.

Use Scenario: Reverse-current blocking between USB-C VBUS and internal battery during charging/discharging transitions.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode controller interface with fast body-diode conduction.

Use Value: -0.75 V V_SD reduces forward drop by >300 mV versus Schottky alternatives, lowering thermal load in slim-profile devices.

Wireless Earbud Battery Management

IoT Sensor Node Load Switching

Use Scenario: Isolating Li-ion battery from BLE SoC during deep-sleep mode to eliminate quiescent leakage.

IC Role / Device Role / Timing Role: High-impedance off-state switch with <1 μA IDSS at -30 V, minimizing standby current drain.

Use Value: -1.5 V maximum V_GS(th) ensures full turn-off with 1.8 V GPIO control, preventing partial conduction in sleep states.

Use Scenario: Enabling/disabling environmental sensor subsystems (e.g., temperature/humidity ICs) based on MCU wake events.

IC Role / Device Role / Timing Role: Logic-level controlled power gate with 8.1 nC Q_g enabling sub-microsecond switching via standard GPIO.

Use Value: 22 ns typical turn-on delay allows rapid subsystem activation (<100 μs) without dedicated driver circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1061X-T1-GE3	R_DS(on) = 0.140 Ω @ -2.5 V (vs. 0.140 Ω @ -2.5 V for SI1079X-T1-GE3), but higher Q_g = 10.5 nC.	Less suitable for 2.5 V-only systems due to higher V_GS(th) (-0.8 to -2.0 V) and reduced gate drive margin.	Prefer SI1079X-T1-GE3 when driving from 3.3 V logic or requiring faster switching with lower gate charge.
DMN2020LFG-7	Lower R_DS(on) = 0.085 Ω @ -4.5 V, but larger SOT-563 package (1.7 mm × 1.7 mm) and no 100 % R_g test.	Acceptable where board space permits slightly larger footprint and tighter R_g control is not required for timing-critical designs.	Choose DMN2020LFG-7 only if lower on-resistance outweighs need for guaranteed gate resistance and ESD robustness.

Compared with Si1061X-T1-GE3 and DMN2020LFG-7, SI1079X-T1-GE3 offers the best balance of low gate charge, verified R_g, and industry-leading ESD rating in the smallest SC-89 outline-making it optimal for space- and reliability-constrained portable power switches.

Availability

SI1079X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power sequencing, USB-C port protection, and wireless earbud battery management requiring stable component supply across high-volume consumer electronics programs.

Supply support for SI1079X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The SI1079X-T1-GE3 belongs to Vishay's TrenchFET® P-channel logic-level MOSFET family, engineered specifically for ultra-compact, high-efficiency load switching in battery-powered portable electronics.

FAQ

What is the maximum continuous drain current for SI1079X-T1-GE3 at 70 °C ambient temperature?

The SI1079X-T1-GE3 supports -1.15 A continuous drain current at T_A = 70 °C on a 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its 450 °C/W junction-to-ambient resistance and 0.21 W maximum power dissipation at that temperature.

Does SI1079X-T1-GE3 require a gate resistor for stable switching in portable applications?

While SI1079X-T1-GE3 does not mandate an external gate resistor, a 1 Ω to 10 Ω series resistor is recommended to dampen ringing caused by trace inductance interacting with its 3.6–36 Ω intrinsic gate resistance. This improves EMI performance and prevents false triggering in noise-sensitive portable environments.

Can SI1079X-T1-GE3 be used in reverse polarity protection circuits?

Yes, SI1079X-T1-GE3 is commonly deployed in reverse polarity protection configurations with source tied to input and drain to load. Its -30 V V_DS rating and -0.75 V body diode forward voltage ensure low-loss blocking of reverse voltage while supporting fast fault recovery during plug/unplug events.

What is the gate-source leakage current specification for SI1079X-T1-GE3 at ±12 V?

The SI1079X-T1-GE3 exhibits ±10 μA maximum gate-source leakage (I_GSS) at V_GS = ±12 V and T_J = 25 °C, as stated in the Static Specifications table. This low leakage preserves gate drive integrity in high-impedance control nodes and extends battery life in always-on monitoring circuits.

Is SI1079X-T1-GE3 compatible with reflow soldering profiles for lead-free assembly?

Yes, SI1079X-T1-GE3 is qualified for standard lead-free reflow per J-STD-020, with peak temperature tolerance up to 260 °C. Its Pb-free and halogen-free construction complies with IPC/JEDEC J-STD-020D.2 and RoHS requirements for modern SMT lines.

SI1079X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.44A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 1.4A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 330mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89-6

SI1079X-T1-GE3 FAQ

1.How can I place an order for SI1079X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1079X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1079X-T1-GE3 reliable?

The price and inventory of SI1079X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1079X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1079X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1079X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1079X-T1-GE3?

SI1079X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1079X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1079X-T1-GE3?

For technical support, including SI1079X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1079X-T1-GE3 requirements.

6.How does Aetrix verify that SI1079X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1079X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1079X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1079X-T1-GE3?

All SI1079X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1079X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1079X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1079X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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