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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1300BDL-T1-E3

Name: SI1300BDL-T1-E3
Brand: Vishay Siliconix
SKU: SI1300BDL-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1300BDL-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: SI1300BDL-T1-E3.pdf

Description:: MOSFET N-CH 20V 400MA SC70-3

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Product details

Overview

SI1300BDL-T1-E3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® Power MOSFET in SC-70 package, with R_DS(on) = 0.85 Ω at V_GS = 4.5 V, continuous drain current of 0.4 A at T_C = 25 °C, and total gate charge of 560 pC. It serves as a low-side load switch in space-constrained portable power management circuits.

For engineers reviewing the SI1300BDL-T1-E3 datasheet, SI1300BDL-T1-E3 pinout, SI1300BDL-T1-E3 application, or SI1300BDL-T1-E3 equivalent, key selection criteria include its 20 V V_DS, 0.4 A I_D rating at 25 °C, SC-70 footprint compatibility, halogen-free and RoHS-compliant construction, and guaranteed 100 % R_g testing for gate drive predictability.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve low on-resistance in a miniature surface-mount package. Its gate threshold voltage (0.4–1.0 V) enables direct interfacing with 1.8 V and 2.5 V logic outputs, while the 0.335 nC Q_gd supports fast switching in low-power DC-DC converter synchronous rectification.

The device operates within -55 °C to +150 °C junction temperature range and features a body diode with V_SD = 0.7–1.2 V at I_S = 0.05 A. Thermal resistance R_thJA is 540 °C/W typical on 1" × 1" FR4, confirming suitability for thermally isolated, low-duty-cycle switching roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; defines safe operation in ≤20 V rail systems.
R_DS(on)	0.85 Ω at V_GS = 4.5 V - On-state resistance determines conduction loss in load-switch applications.
I_D (continuous)	0.4 A at T_C = 25 °C - Continuous current capability under heatsink-cooled conditions.
Q_g	560 pC at V_DS = 10 V, V_GS = 4.5 V - Total gate charge governs required driver strength and switching speed.
V_GS(th)	0.4–1.0 V - Gate threshold range ensures turn-on with low-voltage microcontroller GPIOs.
P_D	0.19 W at T_A = 25 °C - Power dissipation limit on standard FR4 PCB without copper pour.
C_iss	35 pF at V_DS = 10 V - Input capacitance affects gate drive loop stability and EMI behavior.

Pinout & Package

SC-70 (3-lead) surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 2.0 mm × 2.1 mm × 0.95 mm (L × W × H), lead pitch 0.65 mm.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts logic-level input to modulate channel conductivity.
S	Source	Reference node for gate drive and current return path; tied to system ground in low-side configuration.
D	Drain	Power output terminal; connects to load or supply rail; electrically tied to exposed pad for thermal conduction.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.85 Ω R_DS(on) in SC-70, optimizing conduction efficiency per unit area.
100 % R_g tested	Guarantees gate resistance between 1.5–12 Ω, ensuring consistent turn-on/turn-off timing across production lots.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment.
Low V_GS(th) range	0.4–1.0 V threshold allows reliable enhancement-mode operation with 1.8 V and 2.5 V digital outputs.
Exposed drain pad	Provides low-impedance thermal path from junction to PCB copper, improving power handling in compact layouts.

Applications

Battery-Powered Load Switching	USB Port Power Control
Use Scenario: Enabling/disabling power to peripherals in handheld medical devices or wearables using a 3.3 V MCU GPIO. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling V_BAT-to-load path; driven directly by microcontroller output. Use Value: 0.4 A rating and 0.85 Ω R_DS(on) minimize dropout and self-heating during sustained operation.	Use Scenario: Implementing overcurrent-protected USB 2.0 port power delivery in docking stations. IC Role / Device Role / Timing Role: Current-limiting switch placed between upstream 5 V supply and downstream USB connector. Use Value: Fast 12 ns rise time and 560 pC Q_g support rapid enable/disable cycles during hot-plug detection.
Low-Voltage Logic-Level Interface	LED Backlight Dimming
Use Scenario: Driving small solenoids or buzzers from FPGA I/O banks operating at 1.8 V LVTTL levels. IC Role / Device Role / Timing Role: Level-shifting power switch translating low-voltage logic to higher-current loads. Use Value: Sub-1 V V_GS(th) ensures full enhancement with 1.8 V drive, eliminating need for external level shifters.	Use Scenario: PWM-controlled current sink for white LED strings in industrial panel displays. IC Role / Device Role / Timing Role: Synchronous PWM switch in constant-current LED driver topology. Use Value: 0.335 nC Q_gd and 7 ns turn-on delay enable clean 10–50 kHz dimming waveforms with minimal shoot-through risk.

Battery-Powered Load Switching

USB Port Power Control

Use Scenario: Enabling/disabling power to peripherals in handheld medical devices or wearables using a 3.3 V MCU GPIO.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling V_BAT-to-load path; driven directly by microcontroller output.

Use Value: 0.4 A rating and 0.85 Ω R_DS(on) minimize dropout and self-heating during sustained operation.

Use Scenario: Implementing overcurrent-protected USB 2.0 port power delivery in docking stations.

IC Role / Device Role / Timing Role: Current-limiting switch placed between upstream 5 V supply and downstream USB connector.

Use Value: Fast 12 ns rise time and 560 pC Q_g support rapid enable/disable cycles during hot-plug detection.

Low-Voltage Logic-Level Interface

LED Backlight Dimming

Use Scenario: Driving small solenoids or buzzers from FPGA I/O banks operating at 1.8 V LVTTL levels.

IC Role / Device Role / Timing Role: Level-shifting power switch translating low-voltage logic to higher-current loads.

Use Value: Sub-1 V V_GS(th) ensures full enhancement with 1.8 V drive, eliminating need for external level shifters.

Use Scenario: PWM-controlled current sink for white LED strings in industrial panel displays.

IC Role / Device Role / Timing Role: Synchronous PWM switch in constant-current LED driver topology.

Use Value: 0.335 nC Q_gd and 7 ns turn-on delay enable clean 10–50 kHz dimming waveforms with minimal shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	R_DS(on) = 0.75 Ω at V_GS = 4.5 V; higher I_D = 0.55 A; same SC-70 package.	Higher current headroom for margin-critical designs; identical footprint enables drop-in evaluation.	Select when >0.4 A continuous load current or lower conduction loss is required without layout change.
AO3400	R_DS(on) = 0.042 Ω at V_GS = 10 V; requires ≥4.5 V gate drive; SOT-23 package (larger footprint).	Lower R_DS(on) but incompatible pinout and higher gate drive demand; not SC-70 compatible.	Choose only if board redesign is acceptable and sub-50 mΩ on-resistance justifies larger package and drive voltage increase.

Compared with DMN2004LKQ-7 and AO3400, the SI1300BDL-T1-E3 offers optimal balance of ultra-small SC-70 size, guaranteed R_g test, and 1.8 V logic compatibility-making it preferred for space- and voltage-constrained portable systems where 0.4 A suffices.

Availability

SI1300BDL-T1-E3 is available at Aetrix Electronics and suitable for battery-powered load switching, USB port power control, and low-voltage logic-level interface applications requiring stable component supply and long-term manufacturing continuity.

Supply support for SI1300BDL-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on high reliability and power efficiency.

The Si1300BDL series belongs to Vishay's TrenchFET® low-voltage logic-level MOSFET product line, engineered specifically for compact, battery-operated consumer and industrial electronics requiring minimal gate drive and ultra-small footprints.

FAQ

What is the maximum continuous drain current for SI1300BDL-T1-E3 at ambient temperature?

The SI1300BDL-T1-E3 supports 0.37 A continuous drain current at T_A = 25 °C on a 1" × 1" FR4 board, derating to 0.30 A at T_A = 70 °C. This value reflects real-world thermal limits-not junction-limited ratings-and assumes no additional copper pour or heatsinking. The SI1300BDL-T1-E3 must be used within these ambient-referenced limits to ensure long-term reliability.

Is SI1300BDL-T1-E3 compatible with 1.8 V microcontroller GPIOs?

Yes, the SI1300BDL-T1-E3 has a gate threshold voltage range of 0.4–1.0 V, enabling full enhancement with 1.8 V logic signals. At V_GS = 1.8 V, the device delivers usable on-state current (≥100 mA), confirmed by transfer characteristic curves in the official Vishay datasheet (Doc #73557). This makes the SI1300BDL-T1-E3 suitable for direct drive from modern low-voltage MCUs without level-shifting circuitry.

Does SI1300BDL-T1-E3 have a specified body diode forward voltage?

Yes, the SI1300BDL-T1-E3 body diode exhibits V_SD = 0.7–1.2 V at I_S = 0.05 A and T_J = 25 °C. This parameter is critical for reverse-current paths in buck converters or back-to-back switch configurations. The diode's characteristics are fully characterized in the "Drain-Source Body Diode Characteristics" section of the SI1300BDL-T1-E3 datasheet, including temperature dependence up to 150 °C.

What is the thermal resistance from junction to ambient for SI1300BDL-T1-E3?

The SI1300BDL-T1-E3 has a typical junction-to-ambient thermal resistance (R_thJA) of 540 °C/W on a 1" × 1" FR4 board, with a maximum of 670 °C/W. This value is measured under standardized JEDEC conditions and directly impacts allowable power dissipation. For example, at 0.19 W P_D, the junction rise above ambient is ~103 °C-well within the -55 °C to +150 °C operating range of the SI1300BDL-T1-E3.

How does the 100 % R_g test benefit circuit design with SI1300BDL-T1-E3?

The 100 % R_g test ensures every SI1300BDL-T1-E3 unit has gate resistance between 1.5 Ω and 12 Ω, tightly bounding turn-on/turn-off timing variation across production lots. This eliminates timing uncertainty in high-speed switching applications-such as PWM dimming or synchronous rectification-where inconsistent gate resistance could cause shoot-through or increased switching losses. Designers can rely on the SI1300BDL-T1-E3's gate drive behavior without lot-by-lot characterization.

SI1300BDL-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 400mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 250mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.84 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 35 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 190mW (Ta), 200mW (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-3

SI1300BDL-T1-E3 FAQ

1.How can I place an order for SI1300BDL-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1300BDL-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1300BDL-T1-E3 reliable?

The price and inventory of SI1300BDL-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1300BDL-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1300BDL-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1300BDL-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1300BDL-T1-E3?

SI1300BDL-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1300BDL-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1300BDL-T1-E3?

For technical support, including SI1300BDL-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1300BDL-T1-E3 requirements.

6.How does Aetrix verify that SI1300BDL-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1300BDL-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1300BDL-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1300BDL-T1-E3?

All SI1300BDL-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1300BDL-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1300BDL-T1-E3 part is unused and in its original packaging.

Return procedure for SI1300BDL-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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