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Vishay Siliconix SI1302DL-T1-BE3
- Part No.:
- SI1302DL-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
SI1302DL-T1-BE3.pdf
- Description:
- MOSFET N-CH 30V 600MA SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,003
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Product details
Overview
SI1302DL-T1-BE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SC-70 (3-lead) package, optimized for low-current switching in space-constrained applications. It delivers RDS(on) = 0.480 Ω at VGS = 10 V and 0.700 Ω at VGS = 4.5 V, supports continuous drain current up to 0.64 A at TA = 25 °C, and operates across -55 to +150 °C junction temperature range - used in load switching for portable sensors and USB-powered peripherals.
For engineers reviewing the SI1302DL-T1-BE3 datasheet, SI1302DL-T1-BE3 pinout, SI1302DL-T1-BE3 application, or SI1302DL-T1-BE3 equivalent, key selection criteria include its 0.700 Ω on-resistance at 4.5 V gate drive, 0.31 W maximum power dissipation on FR4, SC-70 footprint compatibility, and integrated body diode with VSD = 0.8–1.2 V at IS = 0.23 A.
Technical Context
This device employs trench-gate MOSFET architecture to achieve low RDS(on) in a miniature surface-mount package. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 3.0 V, enabling logic-level compatibility with 3.3 V and 5 V microcontrollers. The integrated body diode supports bidirectional current flow in half-bridge or reverse-polarity protection configurations.
Thermal performance is defined by RthJA = 400 °C/W (max) and RthJF = 340 °C/W (max) under steady-state conditions on 1" × 1" FR4 board. Dynamic parameters include Qg = 1.4 nC and tf = 15 ns, supporting efficient switching in low-duty-cycle control circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V rail switching and USB PD auxiliary paths. |
| RDS(on) @ VGS = 10 V | 0.480 Ω - Enables ≤300 mW conduction loss at 0.6 A, critical for thermally limited PCBs. |
| RDS(on) @ VGS = 4.5 V | 0.700 Ω - Ensures reliable turn-on from standard 3.3 V GPIO without level-shifting circuitry. |
| ID (continuous, TA = 25 °C) | 0.64 A - Supports typical sensor/LED driver loads without external heatsinking. |
| Qg | 1.4 nC - Low gate charge minimizes drive strength requirements and enables fast switching with µA-level gate drivers. |
| VGS(th) | 1.0–3.0 V - Guaranteed turn-on margin below 3.3 V supply, reducing risk of partial enhancement in noise-prone environments. |
| TJ range | -55 to +150 °C - Validated operation across industrial and automotive cabin temperature profiles. |
Pinout & Package
SI1302DL-T1-BE3 is housed in SC-70 (3-lead) package, measuring 2.00 mm × 2.10 mm × 0.95 mm (D × E × A2), with gull-wing leads and moisture sensitivity level (MSL) 1. The package uses Alloy 42 leadframe and is RoHS-compliant and halogen-free per IEC 61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source bias; requires <1.4 nC charge for full enhancement. |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to system ground in low-side switch configuration. |
| 3 (D) | Drain | High-side connection point; carries switched load current and supports 30 V breakdown; thermally coupled to PCB via single drain lead. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on)/area ratio in SC-70, enabling 0.480 Ω at 10 V in <4 mm² footprint. |
| Logic-level gate drive | VGS(th) max = 3.0 V ensures full enhancement from 3.3 V MCU outputs without external level shifters. |
| Integrated body diode | VSD = 0.8–1.2 V at 0.23 A supports reverse-current clamping in H-bridge freewheeling and polarity protection. |
| Halogen-free & RoHS | Complies with IEC 61249-2-21 and Directive 2002/95/EC - qualified for consumer, industrial, and medical end equipment. |
| Low thermal resistance (J-Foot) | RthJF = 340 °C/W (max) provides predictable junction-to-PCB thermal path for reliability modeling in compact layouts. |
Applications
| USB Port Power Switching | IoT Sensor Node Load Control |
|---|---|
|
Use Scenario: Enabling/disabling power to USB peripheral ports in portable hubs or docking stations. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS delivery with fast turn-off to prevent backfeed during hot-plug events. Use Value: 0.700 Ω RDS(on) at 4.5 V ensures <150 mW loss at 500 mA, eliminating need for thermal relief pads in 2-layer PCB designs. |
Use Scenario: Cycling power to BLE/Wi-Fi modules and environmental sensors in battery-operated edge nodes. IC Role / Device Role / Timing Role: High-efficiency sleep-mode disconnect switch minimizing quiescent current leakage (<1 µA IDSS). Use Value: VGS(th) min = 1.0 V guarantees robust turn-off even with aged battery voltages down to 2.8 V. |
| Reverse-Polarity Protection | LED Indicator Driver |
|
Use Scenario: Preventing damage from incorrect battery insertion in handheld medical devices and wearables. IC Role / Device Role / Timing Role: Source-follower configured N-MOSFET providing low-loss forward path and blocking reverse current via body diode orientation. Use Value: 30 V VDS rating accommodates 2-cell Li-ion (8.4 V max) with 3.5× safety margin; RDS(on) adds <50 mV drop at 100 mA. |
Use Scenario: Driving status LEDs in industrial HMIs and programmable logic controllers where GPIO current limits require external switching. IC Role / Device Role / Timing Role: Constant-current sink switch interfacing between microcontroller GPIO and LED anode supply. Use Value: 0.64 A ID rating supports multiplexed LED banks up to 20 mA × 30 segments with margin for surge currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 0.55 Ω @ 4.5 V; SOT-23-3 package; higher RthJA = 450 °C/W | Marginally higher conduction loss; same SC-70 pinout but larger thermal pad area required for equivalent dissipation | Preferred when sourcing flexibility is prioritized over minimal footprint; identical gate drive behavior. |
| AO3400 | RDS(on) = 0.042 Ω @ 10 V; SOT-23-3; 30 V rating; higher ID = 5.7 A | Over-specified for low-current use; requires derating due to higher Qg = 12 nC and larger layout area | Only suitable if future design scaling to >1 A loads is anticipated; not footprint-compatible without PCB revision. |
Compared with DMN2004LK-7 and AO3400, SI1302DL-T1-BE3 offers the smallest SC-70 footprint with best-in-class RDS(on) per mm² for sub-1 A loads, making it optimal for ultra-compact battery-powered systems where thermal budget and board area are tightly constrained.
Availability
SI1302DL-T1-BE3 is available at Aetrix Electronics and suitable for USB power management, IoT sensor node load control, reverse-polarity protection, and LED indicator driving requiring stable component supply and long-term manufacturability.
Supply support for SI1302DL-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and resistive solutions for industrial, automotive, and computing markets.
The SI1302DL-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 MOSFET family, engineered specifically for miniaturized load switching in portable and space-constrained electronics where low gate charge and logic-level drive are essential.
FAQ
What is the maximum continuous drain current for SI1302DL-T1-BE3 at 70 °C ambient temperature?
The SI1302DL-T1-BE3 supports 0.48 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation capability at elevated ambient temperatures and assumes operation on a standard 1" × 1" FR4 board with copper on both sides.
Does SI1302DL-T1-BE3 have a guaranteed gate threshold voltage range?
Yes, SI1302DL-T1-BE3 has a guaranteed VGS(th) range of 1.0 V to 3.0 V at ID = 250 µA and TJ = 25 °C. This specification ensures reliable turn-on with 3.3 V microcontroller outputs while maintaining sufficient margin to avoid unintended conduction from noise or leakage currents.
Can SI1302DL-T1-BE3 be used in reverse-polarity protection circuits?
Yes, SI1302DL-T1-BE3 can be used in reverse-polarity protection by configuring it as a source-follower with the source connected to the input supply and the drain to the load. Its 30 V VDS rating and low RDS(on) provide effective blocking of reverse current while adding only ~50 mV forward drop at 100 mA load current.
What is the total gate charge (Qg) of SI1302DL-T1-BE3 and why does it matter?
The SI1302DL-T1-BE3 has a total gate charge of 1.4 nC (max) at VDS = 15 V, VGS = 10 V, and ID = 0.6 A. This low Qg reduces switching losses and allows direct drive from low-power GPIO pins without external gate drivers - critical for extending battery life in always-on sensor nodes.
Is SI1302DL-T1-BE3 compatible with lead-free reflow soldering processes?
Yes, SI1302DL-T1-BE3 is rated for lead-free reflow soldering per JEDEC J-STD-020. It is supplied in tape-and-reel format with MSL Level 1 rating, meaning it can be stored indefinitely at ≤30 °C/85 % RH and withstand peak reflow temperatures up to 260 °C without preconditioning.
SI1302DL-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 480mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3
SI1302DL-T1-BE3 FAQ
1.How can I place an order for SI1302DL-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1302DL-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1302DL-T1-BE3 reliable?
The price and inventory of SI1302DL-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1302DL-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI1302DL-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1302DL-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1302DL-T1-BE3?
SI1302DL-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1302DL-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1302DL-T1-BE3?
For technical support, including SI1302DL-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1302DL-T1-BE3 requirements.
6.How does Aetrix verify that SI1302DL-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI1302DL-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1302DL-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI1302DL-T1-BE3?
All SI1302DL-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1302DL-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1302DL-T1-BE3 part is unused and in its original packaging.
Return procedure for SI1302DL-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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